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Determination of Slip Length in Couette Flow Based on an Analytical Simulation Incorporating Surface Interaction 被引量:1
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作者 赵欣 魏超 苑士华 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第3期77-81,共5页
An analytical simulation based on a new model incorporating surface interaction is conducted to study the slip phenomenon in the Couette flow at different scales. The velocity profile is calculated by taking account o... An analytical simulation based on a new model incorporating surface interaction is conducted to study the slip phenomenon in the Couette flow at different scales. The velocity profile is calculated by taking account of the micro-force between molecules and macro-force from the viscous shearing effect, as they contribute to the achieve- ment of the slip length. The calculated results are compared with those obtained from the molecular dynamics simulation, showing an excellent agreement. Further, the effect of the shear rate on the slip is investigated. The results can well predict the fluid flow behaviors on a solid substrate, but has to be proved by experiment. 展开更多
关键词 MD Determination of Slip Length in Couette Flow Based on an Analytical simulation Incorporating surface Interaction
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Simulation of Far-Field Properties of Coherent Vertical Cavity Surface Emitting Laser Array
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作者 荀孟 徐晨 +5 位作者 解意洋 邓军 蒋国庆 潘冠中 董毅博 陈弘达 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第4期40-43,共4页
Far-field properties dependent on array scale, separation, element width and emitted wavelength are system atically analyzed theoretically and experimentally. An array model based on the finite-difference method is es... Far-field properties dependent on array scale, separation, element width and emitted wavelength are system atically analyzed theoretically and experimentally. An array model based on the finite-difference method is established to simulate the far-field profile of the coherent arrays. Some important conclusions are obtained. To achieve a higher quality beam, it is necessary to decrease separation between elements, or to increase the element width. Higher brightness can be achieved in the array with larger scale. Emitted wavelength also has an influence on the far-field profile. These analyses can be extended to the future design of coherent vertical cavity surface emitting laser arrays. 展开更多
关键词 of is it as simulation of Far-Field Properties of Coherent Vertical Cavity surface Emitting Laser Array in VCSEL FAR
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Influence of depth-thickness ratio of mining on the stability of a bedding slope with its sliding surface in concave deformation 被引量:1
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作者 Zhang Yuning Tang Jianxin +1 位作者 Li Guodong Teng Junyang 《International Journal of Mining Science and Technology》 SCIE EI CSCD 2016年第6期1117-1123,共7页
In order to study the influence of depth-thickness ratio on bedding slope stability, whose sliding surface is flexural concave in shape under mining conditions, this paper aims to study the characteristics ofdeformari... In order to study the influence of depth-thickness ratio on bedding slope stability, whose sliding surface is flexural concave in shape under mining conditions, this paper aims to study the characteristics ofdeformarion and damage of bedding sliding with depth-thickness ratios of 200:1,150:1,120:1,100:1 and 50:1 by adopting numerical simulation analysis software combined with laboratory-made "under the influence of mining variable sliding surface slope similar simulation test bed", and to propose identification methods for slope stability under the infuence of mining. The results show that mining activities under the slope reduce slope stability. With a decrease in the mining depth ratio, the influence of mining on the slope increases gradually, and the damage to the slope gradually expands, the stability of the slope grad- ually reduces, fracture occurs on the slope toe and the central fissure gradually develops to the surface, and reaches slide threshold when the depth-thickness ratio is 50:1. 展开更多
关键词 Depth-thickness ratio Bedding slope Sliding surface Concave deflection surface Mining influence Similar simulation
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Three-dimensional Monte Carlo simulation of bulk fin field effect transistor
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作者 王骏成 杜刚 +2 位作者 魏康亮 张兴 刘晓彦 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第11期421-426,共6页
In this paper, we investigate the performance of the bulk fin field effect transistor (FinFET) through a three- dimensional (3D) full band Monte Carlo simulator with quantum correction. Several scattering mechanis... In this paper, we investigate the performance of the bulk fin field effect transistor (FinFET) through a three- dimensional (3D) full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO2 interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage. 展开更多
关键词 bulk fin field effect transistor (FinFET) three-dimensional (3D) Monte Carlo simulation surface roughness scattering substrate bias effect
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