As a newly deVeloped method,high temperature in situ observation method can be used to observe directly the interface changes and study the kinetics mechanism during crystal growth.By our newly designed high temperatu...As a newly deVeloped method,high temperature in situ observation method can be used to observe directly the interface changes and study the kinetics mechanism during crystal growth.By our newly designed high temperature in situ observation equiPment,the interface changes of Bi_(12)SiO_(20) crystal growth from melt were studied.展开更多
文摘As a newly deVeloped method,high temperature in situ observation method can be used to observe directly the interface changes and study the kinetics mechanism during crystal growth.By our newly designed high temperature in situ observation equiPment,the interface changes of Bi_(12)SiO_(20) crystal growth from melt were studied.
