The low-energy muon facility at PSI provides nearly fully polarized positive muons with tunable energies in the ke V range to carry out muon spin rotation(LE-μSR)experiments with nanometer depth resolution on thin fi...The low-energy muon facility at PSI provides nearly fully polarized positive muons with tunable energies in the ke V range to carry out muon spin rotation(LE-μSR)experiments with nanometer depth resolution on thin films,heterostructures, and near-surface regions. The low-energy muon beam is focused and transported to the sample by electrostatic lenses. In order to achieve a minimum beam spot size at the sample position and to enable the steering of the beam in the horizontal and vertical direction, a special electrostatic device has been implemented close to the sample position. It consists of a cylinder at ground potential followed by four conically shaped electrodes,which can be operated at different electric potential. In LE-μSR experiments, an electric field at the sample along the beam direction can be applied to accelerate/decelerate muons to different energies(0.5–30 keV). Additionally, a horizontal or vertical magnetic field can be superimposed for transverse or longitudinal field μSR experiments. The focusing properties of the conical lens in the presence of these additional electric and magnetic fields have been investigated and optimized by Geant4 simulations. Some experimental tests were also performed and show that the simulation well describes the experimental setup.展开更多
Atomically thin transition metal dichalcogenide films with distorted trigonal(1T') phase have been predicted to be candidates for realizing quantum spin Hall effect. Growth of 1T' film and experimental investi...Atomically thin transition metal dichalcogenide films with distorted trigonal(1T') phase have been predicted to be candidates for realizing quantum spin Hall effect. Growth of 1T' film and experimental investigation of its electronic structure are critical. Here we report the electronic structure of 1T'-MoTe2 films grown by molecular beam epitaxy(MBE).Growth of the 1T'-MoTe2 film depends critically on the substrate temperature, and successful growth of the film is indicated by streaky stripes in the reflection high energy electron diffraction(RHEED) and sharp diffraction spots in the low energy electron diffraction(LEED). Angle-resolved photoemission spectroscopy(ARPES) measurements reveal a metallic behavior in the as-grown film with an overlap between the conduction and valence bands. First principles calculation suggests that a suitable tensile strain along the a-axis direction is needed to induce a gap to make it an insulator. Our work not only reports the electronic structure of MBE grown 1T'-MoTe2 films, but also provides insights for strain engineering to make it possible for quantum spin Hall effect.展开更多
基金a scholarship from the China Scholarship Council (CSC)financial support from PSI for her stay at PSI
文摘The low-energy muon facility at PSI provides nearly fully polarized positive muons with tunable energies in the ke V range to carry out muon spin rotation(LE-μSR)experiments with nanometer depth resolution on thin films,heterostructures, and near-surface regions. The low-energy muon beam is focused and transported to the sample by electrostatic lenses. In order to achieve a minimum beam spot size at the sample position and to enable the steering of the beam in the horizontal and vertical direction, a special electrostatic device has been implemented close to the sample position. It consists of a cylinder at ground potential followed by four conically shaped electrodes,which can be operated at different electric potential. In LE-μSR experiments, an electric field at the sample along the beam direction can be applied to accelerate/decelerate muons to different energies(0.5–30 keV). Additionally, a horizontal or vertical magnetic field can be superimposed for transverse or longitudinal field μSR experiments. The focusing properties of the conical lens in the presence of these additional electric and magnetic fields have been investigated and optimized by Geant4 simulations. Some experimental tests were also performed and show that the simulation well describes the experimental setup.
基金Project supported by the National Basic Research Program of China(Grant Nos.2016YFA0301004 and 2015CB921001)the National Natural Science Foundation of China(Grant Nos.11334006,11725418,and 11674188)
文摘Atomically thin transition metal dichalcogenide films with distorted trigonal(1T') phase have been predicted to be candidates for realizing quantum spin Hall effect. Growth of 1T' film and experimental investigation of its electronic structure are critical. Here we report the electronic structure of 1T'-MoTe2 films grown by molecular beam epitaxy(MBE).Growth of the 1T'-MoTe2 film depends critically on the substrate temperature, and successful growth of the film is indicated by streaky stripes in the reflection high energy electron diffraction(RHEED) and sharp diffraction spots in the low energy electron diffraction(LEED). Angle-resolved photoemission spectroscopy(ARPES) measurements reveal a metallic behavior in the as-grown film with an overlap between the conduction and valence bands. First principles calculation suggests that a suitable tensile strain along the a-axis direction is needed to induce a gap to make it an insulator. Our work not only reports the electronic structure of MBE grown 1T'-MoTe2 films, but also provides insights for strain engineering to make it possible for quantum spin Hall effect.
