The Ti-Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM （transfer length method） test patterns with Au/Ti/A1/Ti/SiC structure is formed on N-wells created by P^＋ ion implantation into Si-faced...The Ti-Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM （transfer length method） test patterns with Au/Ti/A1/Ti/SiC structure is formed on N-wells created by P^＋ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance pc as low as 8.64×10-6Ω·cm^2 is achieved after annealing in N2 at 900℃ for 5min. The sheet resistance Rsh of the implanted layers is 975Ω. X-ray diffraction （XRD） analysis shows the formation of Ti3SiC2 at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.展开更多
The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. A1 contacts with differ- ent thickness values are deposited on the 3C-SiC/Si （100） structure by the magnetron sputtering met...The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. A1 contacts with differ- ent thickness values are deposited on the 3C-SiC/Si （100） structure by the magnetron sputtering method and are annealed at different temperatures. We focus on the effects of the annealing temperature on the ohmic contact properties and mi- crostructure of A1/3C-SiC structure. The electrical properties of A1 contacts to n-type 3C-SiC are characterized by the transmission line method. The crystal structures and chemical phases of A1 contacts are examined by X-ray diffraction, Raman spectra, and transmission electron microscopy, respectively. It is found that the A1 contacts exhibit ohmic contact behaviors when the annealing temperature is below 550 ℃, and they become Schottky contacts when the annealing tem- perature is above 650 ℃. A minimum specific contact resistance of 1.8 × 10-4 Ω cm2 is obtained when the A1 contact is annealed at 250 ℃.展开更多
The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non...The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.展开更多
基金Project supported by the National Basic Research Program of China （Grant No 2002CB311904）, the National Defense Basic Research Program of China （Grant No 51327010101） and the National Natural Science Foundation of China （Grant No 60376001）.
文摘The Ti-Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM （transfer length method） test patterns with Au/Ti/A1/Ti/SiC structure is formed on N-wells created by P^＋ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance pc as low as 8.64×10-6Ω·cm^2 is achieved after annealing in N2 at 900℃ for 5min. The sheet resistance Rsh of the implanted layers is 975Ω. X-ray diffraction （XRD） analysis shows the formation of Ti3SiC2 at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.
基金supported by the Shanghai Rising-Star Program,China(Grant No.13QA1403800)the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.51002176)+2 种基金the Innovation Program of the Chinese Academy of Sciences(Grant No.KJCX2-EW-W10)the Industry–Academic Joint Technological Innovations Fund Project of Jiangsu Province,China(Grant No.BY2011119)the National High Technology Research and Development Program of China(Grant Nos.2013AA031603 and 2014AA032602)
文摘The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. A1 contacts with differ- ent thickness values are deposited on the 3C-SiC/Si （100） structure by the magnetron sputtering method and are annealed at different temperatures. We focus on the effects of the annealing temperature on the ohmic contact properties and mi- crostructure of A1/3C-SiC structure. The electrical properties of A1 contacts to n-type 3C-SiC are characterized by the transmission line method. The crystal structures and chemical phases of A1 contacts are examined by X-ray diffraction, Raman spectra, and transmission electron microscopy, respectively. It is found that the A1 contacts exhibit ohmic contact behaviors when the annealing temperature is below 550 ℃, and they become Schottky contacts when the annealing tem- perature is above 650 ℃. A minimum specific contact resistance of 1.8 × 10-4 Ω cm2 is obtained when the A1 contact is annealed at 250 ℃.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61534008,61376081,and 61404157)the Application Foundation of Suzhou,China(Grant No.SYG201437)
文摘The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.
