The Ag2O film, as-dcposited by direct-current magnetron reactive sputtering at a substrate temperature of 150 ℃, clearly shows a preferential orientation （111）, and is capable of lowering the threshold value of the...The Ag2O film, as-dcposited by direct-current magnetron reactive sputtering at a substrate temperature of 150 ℃, clearly shows a preferential orientation （111）, and is capable of lowering the threshold value of the thermal decomposition temperature to about 200℃, which is helpful to its application in optical and magneto-optical storage. This paper fits its optical constants in terms of a general oscillator model by using measured ellipsometric parameters. The fitted oscillator energy 2.487 eV is close to the optical direct interband transition energy value of the Ag2O film determined by Tauc equation; whereas, the fitted oscillator energy 4.249 eV is far from the fitted plasma oscillator energy 4.756 eV by single-oscillator energy. The photoluminescence spectrum centred at about 2.31 eV indicates a direct-energy gap photoluminescence mechanism of the Ag2O film.展开更多
A series of （103）-oriented aluminum-doped zinc oxide （AZO） films were deposited on glass substrates via direct- current pulse magnetron reactive sputtering at different O2-to-Ar gas flow ratios （GFRs）. The optic...A series of （103）-oriented aluminum-doped zinc oxide （AZO） films were deposited on glass substrates via direct- current pulse magnetron reactive sputtering at different O2-to-Ar gas flow ratios （GFRs）. The optical properties of the films were characterized using the fitted optical constants in the general oscillator model （which contains two Psemi-Tri oscillators） through the use of measured ellipsometric parameters. The refractive index dispersion data below the interband absorption edge were analyzed using a single-oscillator model. The fitted optical energy gap obtained using the single- oscillator model clearly shows a blue shift, followed by a red shift, as the GFR increases from 0.9/18 to 2.1/18. This shift can be attributed to the change in the free electron concentration of the film, which is closely related to the film stress. In addition, the fitted β value indicates that the AZO film falls under the ionic class. The pbotoluminescence spectrum indicates a photoluminescence mechanism of the direct and wide energy gap semiconductor.展开更多
基金supported by the National Natural Science Foundation of China (Grant No.60807001)Foundation of Henan Educational Committee (Grant No.2010A140017)
文摘The Ag2O film, as-dcposited by direct-current magnetron reactive sputtering at a substrate temperature of 150 ℃, clearly shows a preferential orientation （111）, and is capable of lowering the threshold value of the thermal decomposition temperature to about 200℃, which is helpful to its application in optical and magneto-optical storage. This paper fits its optical constants in terms of a general oscillator model by using measured ellipsometric parameters. The fitted oscillator energy 2.487 eV is close to the optical direct interband transition energy value of the Ag2O film determined by Tauc equation; whereas, the fitted oscillator energy 4.249 eV is far from the fitted plasma oscillator energy 4.756 eV by single-oscillator energy. The photoluminescence spectrum centred at about 2.31 eV indicates a direct-energy gap photoluminescence mechanism of the Ag2O film.
基金Project supported by the National Natural Science Foundation of China(Grant No.60807001)the Foundation of Young Key Teachers from University of Henan Province,China(Grant No.2011GGJS-008)+1 种基金the Foundation of Graduate Education Support of Zhengzhou University,Chinathe Foundation of Graduate Innovation of Zhengzhou University,China(Grant No.12L00104)
文摘A series of （103）-oriented aluminum-doped zinc oxide （AZO） films were deposited on glass substrates via direct- current pulse magnetron reactive sputtering at different O2-to-Ar gas flow ratios （GFRs）. The optical properties of the films were characterized using the fitted optical constants in the general oscillator model （which contains two Psemi-Tri oscillators） through the use of measured ellipsometric parameters. The refractive index dispersion data below the interband absorption edge were analyzed using a single-oscillator model. The fitted optical energy gap obtained using the single- oscillator model clearly shows a blue shift, followed by a red shift, as the GFR increases from 0.9/18 to 2.1/18. This shift can be attributed to the change in the free electron concentration of the film, which is closely related to the film stress. In addition, the fitted β value indicates that the AZO film falls under the ionic class. The pbotoluminescence spectrum indicates a photoluminescence mechanism of the direct and wide energy gap semiconductor.
