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Single crystal growth and transport properties of narrow-bandgap semiconductor RhP_(2)
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作者 吴德胜 郑萍 雒建林 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第8期545-549,共5页
We report the growth of high-quality single crystals of RhP_(2),and systematically study its structure and physical properties by transport,magnetism,and heat capacity measurements.Single-crystal x-ray diffraction rev... We report the growth of high-quality single crystals of RhP_(2),and systematically study its structure and physical properties by transport,magnetism,and heat capacity measurements.Single-crystal x-ray diffraction reveals that RhP_(2) adopts a monoclinic structure with the cell parameters a=5.7347(10)A,b=5.7804(11)A,and c=5.8222(11)A,space group P2_(1)/c(No.14).The electrical resistivityρ(T)measurements indicate that RhP_(2) exhibits narrow-bandgap behavior with the activation energies of 223.1 meV and 27.4 meV for two distinct regions,respectively.The temperaturedependent Hall effect measurements show electron domain transport behavior with a low charge carrier concentration.We find that RhP_(2) has a high mobilityμ_(e)~210 cm^(2)·V^(-1)·s^(-1)with carrier concentrations n_(e)~3.3×10^(18)cm^(3) at 300 K with a narrow-bandgap feature.The high mobilityμ_(e) reaches the maximum of approximately 340 cm^(2)·V^(-1)·s^(-1)with carrier concentrations n_^(e)~2×10^(18)cm^(-3)at 100 K.No magnetic phase transitions are observed from the susceptibilityχ(T)and specific heat C_(p)(T)measurements of RhP_(2).Our results not only provide effective potential as a material platform for studying exotic physical properties and electron band structures but also motivate further exploration of their potential photovoltaic and optoelectronic applications. 展开更多
关键词 single crystal growth narrow band system electrical transport high mobilities
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Single crystal growth and characterization of 166-type magnetic kagome metals
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作者 Huangyu Wu Jinjin Liu +5 位作者 Yongkai Li Peng Zhu Liu Yang Fuhong Chen Deng Hu Zhiwei Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第9期145-150,共6页
Kagome magnets were predicted to be a good platform to investigate correlated topology band structure,Chern quantum phase,and geometrical frustration due to their unique lattice geometry.Here we reported single crysta... Kagome magnets were predicted to be a good platform to investigate correlated topology band structure,Chern quantum phase,and geometrical frustration due to their unique lattice geometry.Here we reported single crystal growth of 166-type kagome magnetic materials,including HfMn_(6)Sn_(6),ZrMn_(6)Sn_(6),GdMn_(6)Sn_(6)and GdV_(6)Sn_(6),by using the flux method with Sn as the flux.Among them,HfMn_(6)Sn_(6)and ZrMn_(6)Sn_(6)single crystals were grown for the first time.X-ray diffraction measurements reveal that all four samples crystallize in HfFe6Ge6-type hexagonal structure with space group P6/mmm.All samples show metallic behavior from temperature dependence of resistivity measurements,and the dominant carrier is hole,except for GdV6Sn6 which is electron dominated.All samples have magnetic order with different transition temperatures,HfMn_(6)Sn_(6),ZrMn_(6)Sn_(6)and GdV_(6)Sn_(6)are antiferromagnetic with TN of 541 K,466 K and 4 K respectively,while GdMn_(6)Sn_(6)is ferrimagnetic with the critical temperature of about 470 K.This study will enrich the research platform of magnetic kagome materials and help explore the novel quantum phenomena in these interesting materials.The dataset of specific crystal structure parameters for HfMn_(6)Sn_(6)are available in Science Data Bank,with the link. 展开更多
关键词 kagome metal single crystal growth crystal structure physical property
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Single Crystal Growth and Physical Property Characterization of Non-centrosymmetric Superconductor PbTaSe_2 被引量:2
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作者 龙雨佳 赵凌霄 +6 位作者 王培培 杨槐馨 李建奇 子海 任治安 任聪 陈根富 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第3期103-106,共4页
We report on the single crystal growth and superconducting properties of PbTaSe2 with the non-centrosymmetric crystal structure. By using the chemicM vapor transport technique, centimeter-size single crystals are succ... We report on the single crystal growth and superconducting properties of PbTaSe2 with the non-centrosymmetric crystal structure. By using the chemicM vapor transport technique, centimeter-size single crystals are success- fully obtained. The measurement of temperature dependence of electricaJ resistivity p(T) in both normal and superconducting states indicates a quasi-two-dimensional electronic state in contrast to that of polycrystalline samples. Specific heat C(T) measurement reveals a bulk superconductivity with Tc ≈ 3.75K and a specific heat jump ratio of 1.42. All these results are in agreement with a moderately electron-phonon coupled, type-g Bardeen-Cooper-Schrieffer superconductor. 展开更多
关键词 of on in single crystal growth and Physical Property Characterization of Non-centrosymmetric Superconductor PbTaSe2 IS that for BCS were been HIGH with
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Single crystal growth and electronic structure of Rh-doped Sr_(3)Ir_(2)O_(7)
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作者 王冰倩 彭舒婷 +10 位作者 欧志鹏 王宇晨 Muhammad Waqas 罗洋 魏志远 淮琳崴 沈建昌 缪宇 孙秀鹏 殷月伟 何俊峰 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第8期86-90,共5页
Ruddlesden-Popper iridate Sr_(3)Ir_(2)O_(7)is a spin-orbit coupled Mott insulator.Hole doped Sr_(3)Ir_(2)O_(7)provides an ideal platform to study the exotic quantum phenomena that occur near the metal-insulator transi... Ruddlesden-Popper iridate Sr_(3)Ir_(2)O_(7)is a spin-orbit coupled Mott insulator.Hole doped Sr_(3)Ir_(2)O_(7)provides an ideal platform to study the exotic quantum phenomena that occur near the metal-insulator transition(MIT)region.Rh substitution of Ir is an effective method to induce hole doping into Sr_(3)Ir_(2)O_(7).However,the highest doping level reported in Sr_(3)(Ir_(1-x)Rh_(x))_(2)O_(7)single crystals was only around 3%,which is far from the MIT region.In this paper,we report the successful growth of single crystals of Sr3(Ir_(1-x)Rh_(x))_(2)O_(7)with a doping level of~9%.The samples have been fully characterized,demonstrating the high quality of the single crystals.Transport measurements have been carried out,confirming the tendency of MIT in these samples.The electronic structure has also been examined by angle-resolved photoemission spectroscopy(ARPES)measurements.Our results establish a platform to investigate the heavily hole doped Sr_(3)Ir_(2)O_(7) compound,which also provide new insights into the MIT with hole doping in this material system. 展开更多
关键词 hole doped iridate single crystal growth metal-insulator transition angle-resolved photoemission spectroscopy(ARPES)
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Influence of vacuum degree on growth of Bi_2Te_3 single crystal
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作者 唐雁坤 赵文娟 +6 位作者 朱化强 黄勇潮 曹伟伟 杨倩 姚晓燕 翟亚 董帅 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第7期529-533,共5页
Bi2Te3single crystals were prepared by the solid-state reaction method. The effect of the vacuum on the growth of Bi2Te3 single crystals was studied with varying the oxygen content by controlling the air pressure in t... Bi2Te3single crystals were prepared by the solid-state reaction method. The effect of the vacuum on the growth of Bi2Te3 single crystals was studied with varying the oxygen content by controlling the air pressure in the silica tube. High quality Bi2Te3 single crystals have been obtained and there is no influence on the growth by an extremely small amount of oxygen in a high vacuum at 1.0 × 10^-3Pa. As the air pressure is increased at 1.0 × 10^-2Pa, oxygen only mainly impacts on the growth of the surface for the prepared samples. Micron-sized rod-like structure and flower-like clusters are observed on the surface. For the samples prepared at 1.0 × 10^-1Pa, x-ray diffraction data show that the yellow part on the surface is Bi2TeO5, while the Bi2Te3 single crystal is still the major phase as the inside part. More interestingly, various crystal morphologies are observed by scanning electron microscope for Bi2Te3 near the boundary between Bi2Te3 and Bi2TeO5.Possible growth mechanisms for Bi2Te3 with different morphologies are discussed in detail. 展开更多
关键词 single crystal growth crystal morphology IMPURITIES bismuth compounds
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Growth and characterization of CaCu_3Ru_4O_(12) single crystal
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作者 王蓉娟 朱媛媛 +4 位作者 王理 刘雍 石兢 熊锐 王俊峰 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第9期502-507,共6页
High-quality single crystals of A-site ordered perovskite oxides CaCu3Ru4O12 were synthesized by flux method with Cu O serving as a flux. The typical size of these single crystals was around 1 × 1 × 1 mm^3 a... High-quality single crystals of A-site ordered perovskite oxides CaCu3Ru4O12 were synthesized by flux method with Cu O serving as a flux. The typical size of these single crystals was around 1 × 1 × 1 mm^3 and the lattice constant was determined to be 7.430 ± 0.0009 ?A by using x-ray single crystal diffraction. The surfaces of the samples were identified to be(100) surface. The high quality of the single crystal samples was confirmed by the rocking curve data which have a full width at half maximum of approximately 0.02 degree. The x-ray photoelectron spectroscopy measurement was performed and the temperature-dependent specific heat, magnetic susceptibility, and electric resistivity were measured along the [100]direction of the single crystals. All these measurements showed that the physical properties of Ca Cu3Ru4O12 single crystals are similar to that of polycrystals. However, the single crystals have a lower Curie susceptibility tail and a smaller residual resistivity than polycrystals, which indicates that the amount of paramagnetic impurities can be controlled by tuning the number of defects in CaCu3Ru4O12 samples. 展开更多
关键词 heavy fermion single crystal growth d electron oxides perovskites
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FEM simulations and experimental studies of the temperature field in a large diamond crystal growth cell 被引量:6
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作者 李战厂 贾晓鹏 +4 位作者 黄国锋 胡美华 李勇 颜丙敏 马红安 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第1期363-367,共5页
We investigate the temperature field variation in the growth region of a diamond crystal in a sealed cell during the whole process of crystal growth by using the temperature gradient method (TGM) at high pressure an... We investigate the temperature field variation in the growth region of a diamond crystal in a sealed cell during the whole process of crystal growth by using the temperature gradient method (TGM) at high pressure and high temperature (HPHT). We employ both the finite element method (FEM) and in situ experiments. Simulation results show that the temperature in the center area of the growth cell continues to decrease during the process of large diamond crystal growth. These results are in good agreement with our experimental data, which demonstrates that the finite element model can successfully predict the temperature field variations in the growth cell. The FEM simulation will be useful to grow larger high-quality diamond crystal by using the TGM. Furthermore, this method will be helpful in designing better cells and improving the growth process of gem-quality diamond crystal. 展开更多
关键词 temperature field finite element method single crystal growth diamond
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Regulation mechanism of catalyst structure on diamond crystal morphology under HPHT process
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作者 Ya-Dong Li Yong-Shan Cheng +5 位作者 Meng-Jie Su Qi-Fu Ran Chun-Xiao Wang Hong-An Ma Chao Fang Liang-Chao Chen 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第7期555-559,共5页
To elucidate the regulation mechanism of catalyst geometry structure to diamond growth,we establish three catalyst modes with different structures.The simulation results show that with the decrease of the protruding h... To elucidate the regulation mechanism of catalyst geometry structure to diamond growth,we establish three catalyst modes with different structures.The simulation results show that with the decrease of the protruding height of the catalyst,the low-temperature region gradually moves toward the center of the catalyst,which causes the distribution characteristics of the temperature and convection field in the catalyst to change.The temperature difference in vertical direction of the catalyst decreases gradually and increases in the horizontal direction,while the catalyst convection velocity has the same variation regularity in the corresponding directions.The variation of temperature difference and convection velocity lead the crystal growth rate in different crystal orientations to change,which directly affects the crystal morphology of the synthetic diamond.The simulation results are consistent with the experimental results,which shows the correctness of the theoretical rational analysis.This work is expected to be able to facilitate the understanding of catalyst structure regulation mechanism on diamond morphology and the providing of an important theoretical basis for the controllable growth of special crystal shape diamond under HPHT process. 展开更多
关键词 DIAMOND single crystal growth high pressure and high TEMPERATURE crystal morphology
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