Solar Design(https://solardesign.cn/)is an online photovoltaic device simulation and design platform that provides engineering modeling analysis for crystalline silicon solar cells,as well as emerging high-efficiency ...Solar Design(https://solardesign.cn/)is an online photovoltaic device simulation and design platform that provides engineering modeling analysis for crystalline silicon solar cells,as well as emerging high-efficiency solar cells such as organic,perovskite,and tandem cells.The platform offers user-updatable libraries of basic photovoltaic materials and devices,device-level multi-physics simulations involving optical–electrical–thermal interactions,and circuit-level compact model simulations based on detailed balance theory.Employing internationally advanced numerical methods,the platform accurately,rapidly,and efficiently solves optical absorption,electrical transport,and compact circuit models.It achieves multi-level photovoltaic simulation technology from“materials to devices to circuits”with fully independent intellectual property rights.Compared to commercial softwares,the platform achieves high accuracy and improves speed by more than an order of magnitude.Additionally,it can simulate unique electrical transport processes in emerging solar cells,such as quantum tunneling,exciton dissociation,and ion migration.展开更多
In this paper, chaotic behaviours in the fractional-order Liu system are studied. Based on the approximation theory of fractional-order operator, circuits are designed to simulate the fractional- order Liu system with...In this paper, chaotic behaviours in the fractional-order Liu system are studied. Based on the approximation theory of fractional-order operator, circuits are designed to simulate the fractional- order Liu system with q=0.1 - 0.9 in a step of 0.1, and an experiment has demonstrated the 2.7-order Liu system. The simulation results prove that the chaos exists indeed in the fractional-order Liu system with an order as low as 0.3. The experimental results prove that the fractional-order chaotic system can be realized by using hardware devices, which lays the foundation for its practical applications.展开更多
The chaotic behaviours of a fractional-order generalized Lorenz system and its synchronization are studied in this paper. A new electronic circuit unit to realize fractional-order operator is proposed. According to th...The chaotic behaviours of a fractional-order generalized Lorenz system and its synchronization are studied in this paper. A new electronic circuit unit to realize fractional-order operator is proposed. According to the circuit unit, an electronic circuit is designed to realize a 3.8-order generalized Lorenz chaotic system. Furthermore, synchronization between two fractional-order systems is achieved by utilizing a single-variable feedback method. Circuit experiment simulation results verify the effectiveness of the proposed scheme.展开更多
A new circuit unit for the analysis and the synthesis of the chaotic behaviours in a fractional-order Liu system is proposed in this paper. Based on the approximation theory of fractional-order operator, an electronic...A new circuit unit for the analysis and the synthesis of the chaotic behaviours in a fractional-order Liu system is proposed in this paper. Based on the approximation theory of fractional-order operator, an electronic circuit is designed to describe the dynamic behaviours of the fractional-order Liu system with α = 0.9. The results between simulation and experiment are in good agreement with each other, thereby proving that the chaos exists indeed in the fractional-order Liu system.展开更多
This paper reports a new three-dimensional autonomous chaotic system. It contains six control parameters and three nonlinear terms. Two cross-product terms are respectively in two equations. And one square term is in ...This paper reports a new three-dimensional autonomous chaotic system. It contains six control parameters and three nonlinear terms. Two cross-product terms are respectively in two equations. And one square term is in the third equation. Basic dynamic properties of the new system are investigated by means of theoretical analysis, numerical simulation, sensitivity to initial, power spectrum, Lyapunov exponent, and Poincar~ diagrams. The dynamic properties affected by variable parameters are also analysed. Finally, the chaotic system is simulated by circuit. The results verify the existence and implementation of the system.展开更多
The spin-transfer-torque(STT)magnetic tunneling junction(MTJ)device is one of the prominent candidates for spintronic logic circuit and neuromorphic computing.Therefore,building a simulation framework of hybrid STT-MT...The spin-transfer-torque(STT)magnetic tunneling junction(MTJ)device is one of the prominent candidates for spintronic logic circuit and neuromorphic computing.Therefore,building a simulation framework of hybrid STT-MTJ/CMOS(complementary metal-oxide-semiconductor)circuits is of great value for designing a new kind of computing paradigm based on the spintronic devices.In this work,we develop a simulation framework of hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink,which is mainly composed of a physics-based STT-MTJ model,a controlled resistor,and a current sensor.In the proposed framework,the STT-MTJ model,based on the Landau-Lifshitz-Gilbert-Slonczewsk(LLGS)equation,is implemented using the MATLAB script.The proposed simulation framework is modularized design,with the advantage of simple-to-use and easy-to-expand.To prove the effectiveness of the proposed framework,the STT-MTJ model is benchmarked with experimental results.Furthermore,the pre-charge sense amplifier(PCSA)circuit consisting of two STT-MTJ devices is validated and the electrical coupling of two spin-torque oscillators is simulated.The results demonstrate the effectiveness of our simulation framework.展开更多
The finite element method is first introduced into the design process of detecting electrodes of three electrode capacitance fuze, the mutual capacitance of the fuze and target is calculated by the finite element met...The finite element method is first introduced into the design process of detecting electrodes of three electrode capacitance fuze, the mutual capacitance of the fuze and target is calculated by the finite element method, which provides the parameters for simulation circuit and design of detecting electrode. The finite element method pierces the traditional method of designing detecting electrode-design, test and adjustment. The system capacitance can be calculated accurately and the performance can be predicted in the design period of the detecting electrode, which saves a lot of research fee. The capacitances of a mortar shell fuze above ground 2 m and lower are given. After putting the computing data into simulating circuit, the demodulation voltage can be obtained, its changing trend is in agreement with the tested result.展开更多
为了满足功率电路及系统设计对p-GaN HEMT(High Electron Mobility Transistor)器件模型的需求,本文建立了一套基于表面势计算方法的增强型p-GaN HEMT器件SPICE(Simulation Program with Integrated Circuit Emphasis)模型.根据耗尽型Ga...为了满足功率电路及系统设计对p-GaN HEMT(High Electron Mobility Transistor)器件模型的需求,本文建立了一套基于表面势计算方法的增强型p-GaN HEMT器件SPICE(Simulation Program with Integrated Circuit Emphasis)模型.根据耗尽型GaN HEMT器件和增强型p-GaN HEMT器件结构的对比,推导出p-GaN栅结构电压解析公式.考虑到p-GaN栅掺杂效应和物理机理,推导出栅电容和栅电流解析公式.同时,与基于表面势的高电子迁移率晶体管高级SPICE模型内核相结合,建立完整的增强型p-GaN HEMT功率器件的SPICE模型.将所建立的SPICE模型与实测结果进行对比验证.结果表明,所建立的模型准确实现了包括转移特性、输出特性、栅电容以及栅电流在内的p-GaN HEMT器件的电学特性.模型仿真数据与实测数据拟合度误差均小于5%.本文所提出的增强型p-GaN HEMT器件模型在进行电路设计时具有重要的应用价值.展开更多
As the fourth passive circuit component, a memristor is a nonlinear resistor that can ＂remember＂ the amount of charge passing through it. The characteristic of ＂remembering＂ the charge and non-volatility makes mem...As the fourth passive circuit component, a memristor is a nonlinear resistor that can ＂remember＂ the amount of charge passing through it. The characteristic of ＂remembering＂ the charge and non-volatility makes memristors great potential candidates in many fields. Nowadays, only a few groups have the ability to fabricate memristors, and most researchers study them by theoretic analysis and simulation. In this paper, we first analyse the theoretical base and characteristics of memristors, then use a simulation program with integrated circuit emphasis as our tool to simulate the theoretical model of memristors and change the parameters in the model to see the influence of each parameter on the characteristics. Our work supplies researchers engaged in memristor-based circuits with advice on how to choose the proper parameters.展开更多
This paper proposed a method of generating two attractors in a novel grid multi-scroll chaotic system. Based on a newly generated three-dimensional system, a two-attractor grid multi-scroll attractor system can be gen...This paper proposed a method of generating two attractors in a novel grid multi-scroll chaotic system. Based on a newly generated three-dimensional system, a two-attractor grid multi-scroll attractor system can be generated by adding two triangular waves and a sign function. Some basic dynamical properties, such as equilibrium points, bifurcations, and phase diagrams, were studied. Furthermore, the system was experimentally confirmed by an electronic circuit. The circuit simulation results and numerical simulation results verified the feasibility of this method.展开更多
The capacitively coupled radio frequency（CCRF）plasma has been widely used in various fields.In some cases,it requires us to estimate the range of key plasma parameters simpler and quicker in order to understand the ...The capacitively coupled radio frequency（CCRF）plasma has been widely used in various fields.In some cases,it requires us to estimate the range of key plasma parameters simpler and quicker in order to understand the behavior in plasma.In this paper,a glass vacuum chamber and a pair of plate electrodes were designed and fabricated,using 13.56 MHz radio frequency（RF）discharge technology to ionize the working gas of Ar.This discharge was mathematically described with equivalent circuit model.The discharge voltage and current of the plasma were measured atdifferent pressures and different powers.Based on the capacitively coupled homogeneous discharge model,the equivalent circuit and the analytical formula were established.The plasma density and temperature were calculated by using the equivalent impedance principle and energy balance equation.The experimental results show that when RF discharge power is 50–300 W and pressure is 25–250 Pa,the average electron temperature is about 1.7–2.1 e V and the average electron density is about 0.5？×10^17–3.6？×10^17m^-3.Agreement was found when the results were compared to those given by optical emission spectroscopy and COMSOL simulation.展开更多
The recent published experimental data of titanium oxide memristor devices which are tested under the same experi- mental conditions exhibit the strange instability and complexity of these devices. Such undesired char...The recent published experimental data of titanium oxide memristor devices which are tested under the same experi- mental conditions exhibit the strange instability and complexity of these devices. Such undesired characteristics preclude the understanding of the device conductive processes and the memristor-based practical applications. The possibility of the coexistence of dopant drift and tunnel barrier conduction in a memristor provides preliminary explanations for the undesired characteristics. However, current research lacks detailed discussion about the coexistence case. In this paper, dopant drift and tunnel barrier-based theories are first analyzed for studying the relations between parameters and physical variables which affect characteristics of mernristors, and then the influences of each parameter change on the conductive behaviors in the single and coexistence cases of the two mechanisms are simulated and discussed respectively. The simulation results provide further explanations of the complex device conduction. Theoretical methods of eliminating or reducing the coex- istence of the two mechanisms are proposed, in order to increase the stability of the device conduction. This work also provides the support for optimizing the fabrications of memristor devices with excellent performance.展开更多
基金Project supported by the Scientific Research Project of China Three Gorges Corporation(Grant No.202203092)。
文摘Solar Design(https://solardesign.cn/)is an online photovoltaic device simulation and design platform that provides engineering modeling analysis for crystalline silicon solar cells,as well as emerging high-efficiency solar cells such as organic,perovskite,and tandem cells.The platform offers user-updatable libraries of basic photovoltaic materials and devices,device-level multi-physics simulations involving optical–electrical–thermal interactions,and circuit-level compact model simulations based on detailed balance theory.Employing internationally advanced numerical methods,the platform accurately,rapidly,and efficiently solves optical absorption,electrical transport,and compact circuit models.It achieves multi-level photovoltaic simulation technology from“materials to devices to circuits”with fully independent intellectual property rights.Compared to commercial softwares,the platform achieves high accuracy and improves speed by more than an order of magnitude.Additionally,it can simulate unique electrical transport processes in emerging solar cells,such as quantum tunneling,exciton dissociation,and ion migration.
文摘In this paper, chaotic behaviours in the fractional-order Liu system are studied. Based on the approximation theory of fractional-order operator, circuits are designed to simulate the fractional- order Liu system with q=0.1 - 0.9 in a step of 0.1, and an experiment has demonstrated the 2.7-order Liu system. The simulation results prove that the chaos exists indeed in the fractional-order Liu system with an order as low as 0.3. The experimental results prove that the fractional-order chaotic system can be realized by using hardware devices, which lays the foundation for its practical applications.
基金supported by the Natural Science Foundation of Hebei Province,China (Grant Nos A2008000136 and A2006000128)
文摘The chaotic behaviours of a fractional-order generalized Lorenz system and its synchronization are studied in this paper. A new electronic circuit unit to realize fractional-order operator is proposed. According to the circuit unit, an electronic circuit is designed to realize a 3.8-order generalized Lorenz chaotic system. Furthermore, synchronization between two fractional-order systems is achieved by utilizing a single-variable feedback method. Circuit experiment simulation results verify the effectiveness of the proposed scheme.
文摘A new circuit unit for the analysis and the synthesis of the chaotic behaviours in a fractional-order Liu system is proposed in this paper. Based on the approximation theory of fractional-order operator, an electronic circuit is designed to describe the dynamic behaviours of the fractional-order Liu system with α = 0.9. The results between simulation and experiment are in good agreement with each other, thereby proving that the chaos exists indeed in the fractional-order Liu system.
文摘This paper reports a new three-dimensional autonomous chaotic system. It contains six control parameters and three nonlinear terms. Two cross-product terms are respectively in two equations. And one square term is in the third equation. Basic dynamic properties of the new system are investigated by means of theoretical analysis, numerical simulation, sensitivity to initial, power spectrum, Lyapunov exponent, and Poincar~ diagrams. The dynamic properties affected by variable parameters are also analysed. Finally, the chaotic system is simulated by circuit. The results verify the existence and implementation of the system.
基金Project supported by the National Natural Science Foundation of China(Grant No.62004223)the Science and Technology Innovation Program of Hunan Province,China(Grant No.2022RC1094)+1 种基金the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics,China(Grant No.KF202012)the Hunan Provincial Science Innovation Project for Postgraduate,China(Grant No.CX20210086).
文摘The spin-transfer-torque(STT)magnetic tunneling junction(MTJ)device is one of the prominent candidates for spintronic logic circuit and neuromorphic computing.Therefore,building a simulation framework of hybrid STT-MTJ/CMOS(complementary metal-oxide-semiconductor)circuits is of great value for designing a new kind of computing paradigm based on the spintronic devices.In this work,we develop a simulation framework of hybrid STT-MTJ/CMOS circuits based on MATLAB/Simulink,which is mainly composed of a physics-based STT-MTJ model,a controlled resistor,and a current sensor.In the proposed framework,the STT-MTJ model,based on the Landau-Lifshitz-Gilbert-Slonczewsk(LLGS)equation,is implemented using the MATLAB script.The proposed simulation framework is modularized design,with the advantage of simple-to-use and easy-to-expand.To prove the effectiveness of the proposed framework,the STT-MTJ model is benchmarked with experimental results.Furthermore,the pre-charge sense amplifier(PCSA)circuit consisting of two STT-MTJ devices is validated and the electrical coupling of two spin-torque oscillators is simulated.The results demonstrate the effectiveness of our simulation framework.
文摘The finite element method is first introduced into the design process of detecting electrodes of three electrode capacitance fuze, the mutual capacitance of the fuze and target is calculated by the finite element method, which provides the parameters for simulation circuit and design of detecting electrode. The finite element method pierces the traditional method of designing detecting electrode-design, test and adjustment. The system capacitance can be calculated accurately and the performance can be predicted in the design period of the detecting electrode, which saves a lot of research fee. The capacitances of a mortar shell fuze above ground 2 m and lower are given. After putting the computing data into simulating circuit, the demodulation voltage can be obtained, its changing trend is in agreement with the tested result.
基金supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61003082) the Science Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No. 60921062)
文摘As the fourth passive circuit component, a memristor is a nonlinear resistor that can ＂remember＂ the amount of charge passing through it. The characteristic of ＂remembering＂ the charge and non-volatility makes memristors great potential candidates in many fields. Nowadays, only a few groups have the ability to fabricate memristors, and most researchers study them by theoretic analysis and simulation. In this paper, we first analyse the theoretical base and characteristics of memristors, then use a simulation program with integrated circuit emphasis as our tool to simulate the theoretical model of memristors and change the parameters in the model to see the influence of each parameter on the characteristics. Our work supplies researchers engaged in memristor-based circuits with advice on how to choose the proper parameters.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60972069)the Science and Technology Foundation of the Education Department of Chongqing (Grant No. KJ090513)
文摘This paper proposed a method of generating two attractors in a novel grid multi-scroll chaotic system. Based on a newly generated three-dimensional system, a two-attractor grid multi-scroll attractor system can be generated by adding two triangular waves and a sign function. Some basic dynamical properties, such as equilibrium points, bifurcations, and phase diagrams, were studied. Furthermore, the system was experimentally confirmed by an electronic circuit. The circuit simulation results and numerical simulation results verified the feasibility of this method.
基金supported by National Natural Science Foundation of China(Grant No.61378037)the Fundamental Research Funds for the Central Universities(Nos.2013B33614,2017B15214)+1 种基金the Research Funds of Innovation and Entrepreneurship Education Reform for Chinese Universities(No.16CCJG01Z004)the Changzhou Science and Technology Program(No.CJ20160027)
文摘The capacitively coupled radio frequency（CCRF）plasma has been widely used in various fields.In some cases,it requires us to estimate the range of key plasma parameters simpler and quicker in order to understand the behavior in plasma.In this paper,a glass vacuum chamber and a pair of plate electrodes were designed and fabricated,using 13.56 MHz radio frequency（RF）discharge technology to ionize the working gas of Ar.This discharge was mathematically described with equivalent circuit model.The discharge voltage and current of the plasma were measured atdifferent pressures and different powers.Based on the capacitively coupled homogeneous discharge model,the equivalent circuit and the analytical formula were established.The plasma density and temperature were calculated by using the equivalent impedance principle and energy balance equation.The experimental results show that when RF discharge power is 50–300 W and pressure is 25–250 Pa,the average electron temperature is about 1.7–2.1 e V and the average electron density is about 0.5？×10^17–3.6？×10^17m^-3.Agreement was found when the results were compared to those given by optical emission spectroscopy and COMSOL simulation.
基金supported by the National Natural Science Foundation of China(Grant No.61171017)
文摘The recent published experimental data of titanium oxide memristor devices which are tested under the same experi- mental conditions exhibit the strange instability and complexity of these devices. Such undesired characteristics preclude the understanding of the device conductive processes and the memristor-based practical applications. The possibility of the coexistence of dopant drift and tunnel barrier conduction in a memristor provides preliminary explanations for the undesired characteristics. However, current research lacks detailed discussion about the coexistence case. In this paper, dopant drift and tunnel barrier-based theories are first analyzed for studying the relations between parameters and physical variables which affect characteristics of mernristors, and then the influences of each parameter change on the conductive behaviors in the single and coexistence cases of the two mechanisms are simulated and discussed respectively. The simulation results provide further explanations of the complex device conduction. Theoretical methods of eliminating or reducing the coex- istence of the two mechanisms are proposed, in order to increase the stability of the device conduction. This work also provides the support for optimizing the fabrications of memristor devices with excellent performance.
