Silicon wafers are the most widely used substrates for semiconductors. The falling price of silicon wafers has created tremendous pressure on silicon wafer manufacturers to develop cost-effective manufacturing process...Silicon wafers are the most widely used substrates for semiconductors. The falling price of silicon wafers has created tremendous pressure on silicon wafer manufacturers to develop cost-effective manufacturing processes. A critical issue in wafer production is the waviness induced by wire sawing. If this waviness is not removed, it will affect wafer flatness and semiconductor performance. In practice, both lapping and grinding have been used to flatten wire-sawn wafers. Although grinding is not as effective as lapping in removing waviness, it has many other advantages over lapping (such as higher throughput, fully automatic, and more benign to environment) and has great potential to reduce manufacturing cost of silicon wafers. This paper presents a finite element analysis (FEA) study on grinding and lapping of wire-sawn silicon wafers. An FEA model is first developed to simulate the waviness deformation of wire-sawn wafers in grinding and lapping processes. It is then used to explain how the waviness is removed or reduced by lapping and grinding and why the effectiveness of grinding in removing waviness is different from that of lapping. Furthermore, the model is used to study the effects of various parameters including active-grinding-zone orientation, grinding force, waviness wavelength, and waviness height on the reduction and elimination of waviness. Finally, the results of pilot experiments to verify the model are discussed.展开更多
A combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer and investigate the effect of thermal transport properties on temperature non-uniformity within wafer surface...A combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer and investigate the effect of thermal transport properties on temperature non-uniformity within wafer surface. It is found that the increased conductivities in both doped and undoped regions help reduce the temperature difference across the wafer surface. However, the doped layer conductivity has little effect on the overall temperature distribution and difference. The temperature level and difference on the top surface drop suddenly when absorption coefficient changes from 104 to 103 m-1. When the absorption coefficient is less or equal to 103 m-1, the temperature level and difference do not change much. The emissivity has the dominant effect on the top surface temperature level and difference. Higher surface emissivity can easily increase the temperature level of the wafer surface. After using the improved property data, the overall temperature level reduces by about 200 K from the basis case. The results will help improve the current understanding of the energy transport in the rapid thermal processing and the wafer temperature monitor and control level.展开更多
Poly （methyl methacrylate） （PMMA） brushes were synthesized from silicon wafers via surface initiated atom transfer radical polymerization （SI-ATRP）. Energy disperse spectroscopy （EDS） and atomic force microsco...Poly （methyl methacrylate） （PMMA） brushes were synthesized from silicon wafers via surface initiated atom transfer radical polymerization （SI-ATRP）. Energy disperse spectroscopy （EDS） and atomic force microscopy （AFM） confirmed that PMMA brushes were successfully prepared on the silicon wafers, and the surface became more hydrophobic according to the contact angle of 69~. It is found that CuCI/1, 1, 4, 7, 10, 10-hexamethyl triethylenetetramine （HMTETA） system is more suitable than CuBr/N, N, N′, N″, N′″-pentamethyl diethylenetriamine （PMDETA） system to control the free radical polymerization of MMA in solution. Nevertheless, better control on the thickness of PMMA brushes was achieved in CuBr/PMDETA than in CuC1/HMTETA due to higher activity and better reversibility of the former system.展开更多
文摘Silicon wafers are the most widely used substrates for semiconductors. The falling price of silicon wafers has created tremendous pressure on silicon wafer manufacturers to develop cost-effective manufacturing processes. A critical issue in wafer production is the waviness induced by wire sawing. If this waviness is not removed, it will affect wafer flatness and semiconductor performance. In practice, both lapping and grinding have been used to flatten wire-sawn wafers. Although grinding is not as effective as lapping in removing waviness, it has many other advantages over lapping (such as higher throughput, fully automatic, and more benign to environment) and has great potential to reduce manufacturing cost of silicon wafers. This paper presents a finite element analysis (FEA) study on grinding and lapping of wire-sawn silicon wafers. An FEA model is first developed to simulate the waviness deformation of wire-sawn wafers in grinding and lapping processes. It is then used to explain how the waviness is removed or reduced by lapping and grinding and why the effectiveness of grinding in removing waviness is different from that of lapping. Furthermore, the model is used to study the effects of various parameters including active-grinding-zone orientation, grinding force, waviness wavelength, and waviness height on the reduction and elimination of waviness. Finally, the results of pilot experiments to verify the model are discussed.
基金Project(N110204015)supported by the Fundamental Research Funds for the Central Universities,ChinaProject(2012M510075)supported by the China Postdoctoral Science Foundation
文摘A combined conduction and radiation heat transfer model was used to simulate the heat transfer within wafer and investigate the effect of thermal transport properties on temperature non-uniformity within wafer surface. It is found that the increased conductivities in both doped and undoped regions help reduce the temperature difference across the wafer surface. However, the doped layer conductivity has little effect on the overall temperature distribution and difference. The temperature level and difference on the top surface drop suddenly when absorption coefficient changes from 104 to 103 m-1. When the absorption coefficient is less or equal to 103 m-1, the temperature level and difference do not change much. The emissivity has the dominant effect on the top surface temperature level and difference. Higher surface emissivity can easily increase the temperature level of the wafer surface. After using the improved property data, the overall temperature level reduces by about 200 K from the basis case. The results will help improve the current understanding of the energy transport in the rapid thermal processing and the wafer temperature monitor and control level.
基金Project(21376271)supported by the National Natural Science Foundation of ChinaProject(2013)supported by the Scientific Research Foundation for the Returned Overseas Chinese Scholars,China+2 种基金Projects(CL12129,201310533008)supported by the Undergraduates Innovative Training Foundation of Central South University,ChinaProject(Z12060)supported by the Undergraduate Free Exploration Innovation Foundation of Central South University,ChinaProject(CSUZC2013008)supported by the Open-End Fund for the Valuable and Precision Instruments of Central South University,China
文摘Poly （methyl methacrylate） （PMMA） brushes were synthesized from silicon wafers via surface initiated atom transfer radical polymerization （SI-ATRP）. Energy disperse spectroscopy （EDS） and atomic force microscopy （AFM） confirmed that PMMA brushes were successfully prepared on the silicon wafers, and the surface became more hydrophobic according to the contact angle of 69~. It is found that CuCI/1, 1, 4, 7, 10, 10-hexamethyl triethylenetetramine （HMTETA） system is more suitable than CuBr/N, N, N′, N″, N′″-pentamethyl diethylenetriamine （PMDETA） system to control the free radical polymerization of MMA in solution. Nevertheless, better control on the thickness of PMMA brushes was achieved in CuBr/PMDETA than in CuC1/HMTETA due to higher activity and better reversibility of the former system.
