Through-silicon-via （TSV） to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits （3D ICs）. Based on the frequency dependent equivalent electrical ...Through-silicon-via （TSV） to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits （3D ICs）. Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 rnV and 379 mV reductions in the peak noise voltage, respectively.展开更多
The through silicon via （TSV） technology has proven to be the critical enabler to realize a three-dimensional （3D） gigscale system with higher performance but shorter interconnect length. However, the received dig...The through silicon via （TSV） technology has proven to be the critical enabler to realize a three-dimensional （3D） gigscale system with higher performance but shorter interconnect length. However, the received digital signal after trans- mission through a TSV channel, composed of redistribution layers （RDLs）, TSVs, and bumps, is degraded at a high data-rate due to the non-idealities of the channel. We propose the Chebyshev multisection transformers to reduce the signal reflec- tion of TSV channel when operating frequency goes up to 20 GHz, by which signal reflection coefficient （$11） and signal transmission coefficient （$21） are improved remarkably by 150% and 73.3%, respectively. Both the time delay and power dissipation are also reduced by 4% and 13.3%, respectively. The resistance-inductance-conductance-capacitance （RLGC） elements of the TSV channel are iterated from scattering （S）-parameters, and the proposed method of weakening the signal reflection is verified using high frequency simulator structure （HFSS） simulation software by Ansoft.展开更多
Based on a stochastic wire length distributed model, the interconnect distribution of a three-dimensional integrated circuit （3D IC） is predicted exactly. Using the results of this model, a global interconnect desig...Based on a stochastic wire length distributed model, the interconnect distribution of a three-dimensional integrated circuit （3D IC） is predicted exactly. Using the results of this model, a global interconnect design window for a giga-scale system-on-chip （SOC） is established by evaluating the constraints of 1） wiring resource, 2） wiring bandwidth, and 3） wiring noise. In comparison to a two-dimensional integrated circuit （2D IC） in a 130-nm and 45-nm technology node, the design window expands for a 3D IC to improve the design reliability and system performance, further supporting 3D IC application in future integrated circuit design.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61131001,61322405,61204044,61376039,and 61334003)
文摘Through-silicon-via （TSV） to TSV crosstalk noise is one of the key factors affecting the signal integrity of three- dimensional integrated circuits （3D ICs）. Based on the frequency dependent equivalent electrical parameters for the TSV channel, an analytical crosstalk noise model is established to capture the TSV induced crosstalk noise. The impact of various design parameters including insulation dielectric, via pitch, via height, silicon conductivity, and terminal impedance on the crosstalk noise is analyzed with the proposed model. Two approaches are proposed to alleviate the TSV noise, namely, driver sizing and via shielding, and the SPICE results show 241 rnV and 379 mV reductions in the peak noise voltage, respectively.
基金Project supported by the National Natural Science Foundation of China(Grant No.61204044)
文摘The through silicon via （TSV） technology has proven to be the critical enabler to realize a three-dimensional （3D） gigscale system with higher performance but shorter interconnect length. However, the received digital signal after trans- mission through a TSV channel, composed of redistribution layers （RDLs）, TSVs, and bumps, is degraded at a high data-rate due to the non-idealities of the channel. We propose the Chebyshev multisection transformers to reduce the signal reflec- tion of TSV channel when operating frequency goes up to 20 GHz, by which signal reflection coefficient （$11） and signal transmission coefficient （$21） are improved remarkably by 150% and 73.3%, respectively. Both the time delay and power dissipation are also reduced by 4% and 13.3%, respectively. The resistance-inductance-conductance-capacitance （RLGC） elements of the TSV channel are iterated from scattering （S）-parameters, and the proposed method of weakening the signal reflection is verified using high frequency simulator structure （HFSS） simulation software by Ansoft.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60725415 and 60676009)the Natural Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2009ZX01034-002-001-005)
文摘Based on a stochastic wire length distributed model, the interconnect distribution of a three-dimensional integrated circuit （3D IC） is predicted exactly. Using the results of this model, a global interconnect design window for a giga-scale system-on-chip （SOC） is established by evaluating the constraints of 1） wiring resource, 2） wiring bandwidth, and 3） wiring noise. In comparison to a two-dimensional integrated circuit （2D IC） in a 130-nm and 45-nm technology node, the design window expands for a 3D IC to improve the design reliability and system performance, further supporting 3D IC application in future integrated circuit design.
