A reverse-conducting lateral insulated-gate bipolar transistor （NI.2-LltJlS｜） with a trench oxide layer （IUL）, teaturlng a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surf...A reverse-conducting lateral insulated-gate bipolar transistor （NI.2-LltJlS｜） with a trench oxide layer （IUL）, teaturlng a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surface and bulk electric fields of the N-drift region, thus the breakdown voltage （BV） is improved. Secondly, the vertical N-buffer layer increases the voltage drop VpN of the P-collector/N-buffer junction, thus the snapback is suppressed. Thirdly, the P-body and the vertical N-buffer act as the anode and the cathode, respectively, to conduct the reverse current, thus the inner diode is integrated. As shown by the simulation results, the proposed RC-LIGBT exhibits trapezoidal electric field distribution with BV of 342.4 V, which is increased by nearly 340% compared to the conventional RC-LIGBT with triangular electric fields of 100.2 V. Moreover, the snapback is eliminated by the vertical N-buffer layer design, thus the reliability of the device is improved.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61604027)the Basic and Advanced Technology Research Project of Chongqing Municipality,China(Grant No.cstc2016jcyj A1923)+3 种基金the Scientific and Technological Research Foundation of Chongqing Municipal Education Commission,China(Grant No.KJ1500404)the Youth Natural Science Foundation of Chongqing University of Posts and Telecommunications,China(Grant Nos.A2015-50 and A2015-52)the Chongqing Key Laboratory Improvement Plan,China(Chongqing Key Laboratory of Photo Electronic Information Sensing and Transmitting Technology)(Grant No.cstc2014pt-sy40001)the University Innovation Team Construction Plan Funding Project of Chongqing,China(Architecture and Core Technologies of Smart Medical System)(Grant No.CXTDG201602009)
文摘A reverse-conducting lateral insulated-gate bipolar transistor （NI.2-LltJlS｜） with a trench oxide layer （IUL）, teaturlng a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surface and bulk electric fields of the N-drift region, thus the breakdown voltage （BV） is improved. Secondly, the vertical N-buffer layer increases the voltage drop VpN of the P-collector/N-buffer junction, thus the snapback is suppressed. Thirdly, the P-body and the vertical N-buffer act as the anode and the cathode, respectively, to conduct the reverse current, thus the inner diode is integrated. As shown by the simulation results, the proposed RC-LIGBT exhibits trapezoidal electric field distribution with BV of 342.4 V, which is increased by nearly 340% compared to the conventional RC-LIGBT with triangular electric fields of 100.2 V. Moreover, the snapback is eliminated by the vertical N-buffer layer design, thus the reliability of the device is improved.
