Surface segregation is studied via the evolution of reflection high-energy electron diffraction （RHEED） patterns under different values of As4 BEP for InGaAs films. When the As4 BEP is set to be zero, the RHEED patt...Surface segregation is studied via the evolution of reflection high-energy electron diffraction （RHEED） patterns under different values of As4 BEP for InGaAs films. When the As4 BEP is set to be zero, the RHEED pattern keeps a 4x3/（nx3） structure with increasing temperature, and surface segregation takes place until 470 ℃ The RHEED pattern develops into a metal-rich （4x2） structure as temperature increases to 495℃. The reason for this is that surface segregation makes the In inside the InGaAs film climb to its surface. With the temperature increasing up to 515℃, the RHEED pattern turns into a GaAs（2x4） structure due to In desorption. While the As4 BEP comes up to a specific value （1.33 x 10-4 Pa-1.33 x 10-3 Pa）, the surface temperature can delay the segregation and desorption. We find that As4 BEP has a big influence on surface desorption, while surface segregation is more strongly dependent on temperature than surface desorption.展开更多
A novel instrument that integrates reflection high energy electron diffraction(RHEED),electron energy loss spectroscopy(EELS),and imaging is designed and simulated.Since it can correlate the structural,elemental,and s...A novel instrument that integrates reflection high energy electron diffraction(RHEED),electron energy loss spectroscopy(EELS),and imaging is designed and simulated.Since it can correlate the structural,elemental,and spatial information of the same surface region via the simultaneously acquired patterns of RHEED,EELS,and energy-filtered electron microscopy,it is named correlative reflection electron microscopy(c-REM).Our simulation demonstrates that the spatial resolution of this c-REM is lower than 50 nm,which meets the requirements for in-situ monitoring the structural and chemical evolution of surface in advanced material.展开更多
A zinc oxide thin film in cubic crystalline phase, which is usually prepared under high pressure, has been grown on the Mg O（001） substrate by a three-step growth using plasma-assisted molecular beam epitaxy. The cu...A zinc oxide thin film in cubic crystalline phase, which is usually prepared under high pressure, has been grown on the Mg O（001） substrate by a three-step growth using plasma-assisted molecular beam epitaxy. The cubic structure is confirmed by in-situ reflection high energy electron diffraction measurements and simulations. The x-ray photoelectron spectroscopy reveals that the outer-layer surface of the film（less than 5 nm thick） is of ZnO phase while the buffer layer above the substrate is of ZnMgO phase, which is further confirmed by the band edge transmissions at the wavelengths of about 390 nm and 280 nm, respectively. The x-ray diffraction exhibits no peaks related to wurtzite ZnO phase in the film. The cubic ZnO film is presumably considered to be of the rock-salt phase. This work suggests that the metastable cubic ZnO films, which are of applicational interest for p-type doping, can be epitaxially grown on the rock-salt substrates without the usually needed high pressure conditions.展开更多
Heteroepitaxial GaN films are grown on sapphire （0001） substrates using laser molecular beam epitaxy. The growth processes are in-situ monitored by reflection high energy electron diffraction. It is revealed that th...Heteroepitaxial GaN films are grown on sapphire （0001） substrates using laser molecular beam epitaxy. The growth processes are in-situ monitored by reflection high energy electron diffraction. It is revealed that the growth mode of GaN transformed from three-dimensional （3D） island mode to two-dimensional （2D） layer-by-layer mode with the increase of thickness. This paper investigates the interfacial strain relaxation of GaN films by analysing their diffraction patterns. Calculation shows that the strain is completely relaxed when the thickness reaches 15 nm. The surface morphology evolution indicates that island merging and reduction of the island-edge barrier provide an effective way to make GaN films follow a 2D layer-by-layer growth mode. The ll0-nm GaN films with a 2D growth mode have smooth regular hexagonal shapes. The X-ray diffraction indicates that thickness has a significant effect on the crystallized quality of GaN thin films.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 60866001)the Special Assistant to High-Level Personnel Research Projects of Guizhou Provincial Party Committee Organization Department of China (Grant No. TZJF- 2008-31)+3 种基金the Support Plan of New Century Excellent Talents of Ministry of Education, China (Grant No. NCET-08-0651)the Doctorate Foundation of the State Education Ministry of China (Grant No. 20105201110003)the Special Governor Fund of Outstanding Professionals in Science and Technology and Education of Guizhou Province, China (Grant No. 2009114)the Doctoral Foundation Projects of Guizhou College of Finance and Economics in 2010
文摘Surface segregation is studied via the evolution of reflection high-energy electron diffraction （RHEED） patterns under different values of As4 BEP for InGaAs films. When the As4 BEP is set to be zero, the RHEED pattern keeps a 4x3/（nx3） structure with increasing temperature, and surface segregation takes place until 470 ℃ The RHEED pattern develops into a metal-rich （4x2） structure as temperature increases to 495℃. The reason for this is that surface segregation makes the In inside the InGaAs film climb to its surface. With the temperature increasing up to 515℃, the RHEED pattern turns into a GaAs（2x4） structure due to In desorption. While the As4 BEP comes up to a specific value （1.33 x 10-4 Pa-1.33 x 10-3 Pa）, the surface temperature can delay the segregation and desorption. We find that As4 BEP has a big influence on surface desorption, while surface segregation is more strongly dependent on temperature than surface desorption.
基金Project supported by the Shanghai Tech University and the National Natural Science Foundation of China(Grant No.11774039)。
文摘A novel instrument that integrates reflection high energy electron diffraction(RHEED),electron energy loss spectroscopy(EELS),and imaging is designed and simulated.Since it can correlate the structural,elemental,and spatial information of the same surface region via the simultaneously acquired patterns of RHEED,EELS,and energy-filtered electron microscopy,it is named correlative reflection electron microscopy(c-REM).Our simulation demonstrates that the spatial resolution of this c-REM is lower than 50 nm,which meets the requirements for in-situ monitoring the structural and chemical evolution of surface in advanced material.
基金sponsored by the National Basic Research Program of China(973 Program)under grant no.2015CB351905the National Natural Science Foundation of China(no.61504019)+3 种基金China Postdoctoral Science Foundation(no.2015M580783)Scientific Research Start-up Foundation of University of Electronic Science and Technology of China(Y02002010301082)the Technology Innovative Research Team of Sichuan Province of China(no.2015TD0005)the Fundamental Research Funds for the Central Universities of China(no.ZYGX2015J140)
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11204253,U1232110,U1332105,61227009,and 91321102)the Fundamental Research Funds for Central Universities,China(Grant No.2013SH001)the National High Technology Research and Development Program of China(Grant No.2014AA052202)
文摘A zinc oxide thin film in cubic crystalline phase, which is usually prepared under high pressure, has been grown on the Mg O（001） substrate by a three-step growth using plasma-assisted molecular beam epitaxy. The cubic structure is confirmed by in-situ reflection high energy electron diffraction measurements and simulations. The x-ray photoelectron spectroscopy reveals that the outer-layer surface of the film（less than 5 nm thick） is of ZnO phase while the buffer layer above the substrate is of ZnMgO phase, which is further confirmed by the band edge transmissions at the wavelengths of about 390 nm and 280 nm, respectively. The x-ray diffraction exhibits no peaks related to wurtzite ZnO phase in the film. The cubic ZnO film is presumably considered to be of the rock-salt phase. This work suggests that the metastable cubic ZnO films, which are of applicational interest for p-type doping, can be epitaxially grown on the rock-salt substrates without the usually needed high pressure conditions.
基金supported by the Major State Basic Research Development Program of China (Grant No. 61363)the National Natural Science Foundation of China (Grant Nos. 50772019 and 61021061)
文摘Heteroepitaxial GaN films are grown on sapphire （0001） substrates using laser molecular beam epitaxy. The growth processes are in-situ monitored by reflection high energy electron diffraction. It is revealed that the growth mode of GaN transformed from three-dimensional （3D） island mode to two-dimensional （2D） layer-by-layer mode with the increase of thickness. This paper investigates the interfacial strain relaxation of GaN films by analysing their diffraction patterns. Calculation shows that the strain is completely relaxed when the thickness reaches 15 nm. The surface morphology evolution indicates that island merging and reduction of the island-edge barrier provide an effective way to make GaN films follow a 2D layer-by-layer growth mode. The ll0-nm GaN films with a 2D growth mode have smooth regular hexagonal shapes. The X-ray diffraction indicates that thickness has a significant effect on the crystallized quality of GaN thin films.
