A novel ultra-low-power readout integrated circuit(ROIC) for 1 024×1 024 ultraviolet(UV) AlGaN focal plane arrays(FPA) with 18 μm-pitch was presented. In order to optimize power consumption for UVFPA readout cir...A novel ultra-low-power readout integrated circuit(ROIC) for 1 024×1 024 ultraviolet(UV) AlGaN focal plane arrays(FPA) with 18 μm-pitch was presented. In order to optimize power consumption for UVFPA readout circuit these methods were adopted, which including single-terminal amplifier under subthreshold region as CTIA amplifier, common current source load for source follow(SF) buffer in column pixels and level shift circuits, and time-sharing tail current source for column buffer. The smallest operational current of CTIA in pixel unit is only 8.5 nA with 3.3 V power supply by using single-terminal amplifier. The ROIC has been fabricated in SMIC 0.18 μm 1P6M mixed signal process and also achieved better performances with the novel design of bias current adjustable. Furthermore, the overall power consumption of the chip is 67.3 mW at 2 MHz in 8-outputs mode by the above methods according to the experimental results.展开更多
线性雪崩光电二极管(Avalanche photodiode,APD)焦平面红外探测器有着广泛应用场景,APD探测器耦合具有多种模式的读出电路可在有限像元面积内实现多模式探测,提升探测系统集成度。本文设计了一种具有红外热成像模式、门控3D成像模式、...线性雪崩光电二极管(Avalanche photodiode,APD)焦平面红外探测器有着广泛应用场景,APD探测器耦合具有多种模式的读出电路可在有限像元面积内实现多模式探测,提升探测系统集成度。本文设计了一种具有红外热成像模式、门控3D成像模式、激光测距模式和异步激光脉冲探测模式的APD读出电路,四种模式复用输入级电路。通过Krummenacher结构抑制背景辐射影响,扩展了光子飞行时间探测范围;提出一种改进型时刻鉴别电路,通过减小时刻鉴别误差提升距离测量精度。读出电路采用0.18μm 3.3 V CMOS工艺设计,阵列规模128×128、像元中心距30μm,最大电荷容量3.74 Me^(-)。仿真结果表明,激光测距模式,在积分电容13 f F、背景电流1~150 nA条件下,背景电流响应幅值≤1.35 m V,远小于激光响应电流500 nA时280 m V的响应幅值;异步激光脉冲探测模式的幅值灵敏度约110 nA、脉宽灵敏度约4 ns;改进型时刻鉴别电路对于150~500 nA的激光脉冲响应,时刻鉴别误差约4 ns。本文设计的多模式复用APD读出电路具有一定工程应用价值。展开更多
介绍了多波段红外探测器的应用开发进展,并且针对多波段信号同时探测的红外器件特点进行了读出电路设计。其中,Pixel输入级为多波段红外探测器读出电路设计的核心关键模块之一。本文设计采用了缓冲直接注入型(Buffered Direct Injection...介绍了多波段红外探测器的应用开发进展,并且针对多波段信号同时探测的红外器件特点进行了读出电路设计。其中,Pixel输入级为多波段红外探测器读出电路设计的核心关键模块之一。本文设计采用了缓冲直接注入型(Buffered Direct Injection,BDI)像素输入级电路结构,具有高稳定性、低等效输入阻抗的特点,有效提高长波器件的注入效率,并且为光电探测器件提供了稳定的工作条件。以CMOS 0.18μm 5 V标准工艺基础,完成了全电路设计与模拟仿真。结果表明:70 K低温下电路功能正常,40μm间距内含有短、中、长4波段像素输入级,输入级积分信号输出线性度达到99.7%,噪声不超过0.3 mV。展开更多
文摘A novel ultra-low-power readout integrated circuit(ROIC) for 1 024×1 024 ultraviolet(UV) AlGaN focal plane arrays(FPA) with 18 μm-pitch was presented. In order to optimize power consumption for UVFPA readout circuit these methods were adopted, which including single-terminal amplifier under subthreshold region as CTIA amplifier, common current source load for source follow(SF) buffer in column pixels and level shift circuits, and time-sharing tail current source for column buffer. The smallest operational current of CTIA in pixel unit is only 8.5 nA with 3.3 V power supply by using single-terminal amplifier. The ROIC has been fabricated in SMIC 0.18 μm 1P6M mixed signal process and also achieved better performances with the novel design of bias current adjustable. Furthermore, the overall power consumption of the chip is 67.3 mW at 2 MHz in 8-outputs mode by the above methods according to the experimental results.
文摘线性雪崩光电二极管(Avalanche photodiode,APD)焦平面红外探测器有着广泛应用场景,APD探测器耦合具有多种模式的读出电路可在有限像元面积内实现多模式探测,提升探测系统集成度。本文设计了一种具有红外热成像模式、门控3D成像模式、激光测距模式和异步激光脉冲探测模式的APD读出电路,四种模式复用输入级电路。通过Krummenacher结构抑制背景辐射影响,扩展了光子飞行时间探测范围;提出一种改进型时刻鉴别电路,通过减小时刻鉴别误差提升距离测量精度。读出电路采用0.18μm 3.3 V CMOS工艺设计,阵列规模128×128、像元中心距30μm,最大电荷容量3.74 Me^(-)。仿真结果表明,激光测距模式,在积分电容13 f F、背景电流1~150 nA条件下,背景电流响应幅值≤1.35 m V,远小于激光响应电流500 nA时280 m V的响应幅值;异步激光脉冲探测模式的幅值灵敏度约110 nA、脉宽灵敏度约4 ns;改进型时刻鉴别电路对于150~500 nA的激光脉冲响应,时刻鉴别误差约4 ns。本文设计的多模式复用APD读出电路具有一定工程应用价值。
