To mitigate the impact of noise and inter-ference on multi-level-cell(MLC)flash memory with the use of low-density parity-check(LDPC)codes,we propose a dynamic write-voltage design scheme con-sidering the asymmetric p...To mitigate the impact of noise and inter-ference on multi-level-cell(MLC)flash memory with the use of low-density parity-check(LDPC)codes,we propose a dynamic write-voltage design scheme con-sidering the asymmetric property of raw bit error rate(RBER),which can obtain the optimal write voltage by minimizing a cost function.In order to further improve the decoding performance of flash memory,we put forward a low-complexity entropy-based read-voltage optimization scheme,which derives the read voltages by searching for the optimal entropy value via a log-likelihood ratio(LLR)-aware cost function.Simulation results demonstrate the superiority of our proposed dynamic write-voltage design scheme and read-voltage optimization scheme with respect to the existing counterparts.展开更多
Exploiting new concepts for dense, fast, and nonvolatile random access memory with reduced energy consump- tion is a significant issue for information technology. Here we design an ＇electrically written and optically...Exploiting new concepts for dense, fast, and nonvolatile random access memory with reduced energy consump- tion is a significant issue for information technology. Here we design an ＇electrically written and optically read＇ information storage device employing BiFeO3/A u heterostruetures with strong absorption resonance. The electro- optic effect is the basis for the device design, which arises from the strong absorption resonance in BiFeO3/Au heterostructures and the electrically tunable significant birefringence of the BiFeO3 film. We first construct a sim- ulation calculation of the BiFeO3/Au structure spectrum and identify absorption resonance and electro-optical modulation characteristics. Following a micro scale partition, the surface reflected light intensity of different polarization units is calculated. The results depend on electric polarization states of the BiFeO3 film, thus BiFeO3/Au heterostructures can essentially be designed as a type of electrically written and optically read infor- mation storage device by utilizing the scanning near-field optical microscopy technology based on the conductive silicon cantilever tip with nanofabricated aperture. This work will shed light on information storage technology.展开更多
The compact full custom layout design of a 16 kbit mask-programmable complementary metal oxide semiconductor (CMOS) read only memory (ROM) with low power dissipation is introduced. By optimizing storage cell size and ...The compact full custom layout design of a 16 kbit mask-programmable complementary metal oxide semiconductor (CMOS) read only memory (ROM) with low power dissipation is introduced. By optimizing storage cell size and peripheral circuit structure, the ROM has a small area of 0.050 mm2 with a power-delay product of 0.011 pJ/bit at +1.8 V. The high packing density and the excellent power-delay product have been achieved by using SMIC 0.18 μm 1P6M CMOS technology. A novel and simple sense amplifier/driver structure is presented which restores the signal full swing efficiently and reduces the signal rising time by 2.4 ns, as well as the memory access time. The ROM has a fast access time of 8.6 ns. As a consequence, the layout design not only can be embedded into microprocessor system as its program memory, but also can be fabricated individually as ROM ASIC.展开更多
Reading,especially reading at text level,is a process of continuously repeating,consolidating and understanding words,phrases,and sentences.However,from the perspective of psycholinguistics,the compariosn and contrast...Reading,especially reading at text level,is a process of continuously repeating,consolidating and understanding words,phrases,and sentences.However,from the perspective of psycholinguistics,the compariosn and contrast of empirical data from experiments and researches would be evidences to support the idea that reading at text level is mainly influenced by readers' ability of identifying a text's cohesion and coherence,balancing the activation and suppression of background knowledge,as well as readers' utilization of working memory.Readers can make good use of these three aspects in order to advance their understanding of reading at text level.展开更多
基金supported in part by the NSF of China under Grants 62322106,62071131,U2001203,61871136the Guangdong Basic and Applied Basic Research Foundation under Grant 2022B1515020086+1 种基金the International Collaborative Research Program of Guangdong Science and Technology Department under Grant 2022A0505050070the Industrial R&D Project of Haoyang Electronic Co.,Ltd.under Grant 2022440002001494.
文摘To mitigate the impact of noise and inter-ference on multi-level-cell(MLC)flash memory with the use of low-density parity-check(LDPC)codes,we propose a dynamic write-voltage design scheme con-sidering the asymmetric property of raw bit error rate(RBER),which can obtain the optimal write voltage by minimizing a cost function.In order to further improve the decoding performance of flash memory,we put forward a low-complexity entropy-based read-voltage optimization scheme,which derives the read voltages by searching for the optimal entropy value via a log-likelihood ratio(LLR)-aware cost function.Simulation results demonstrate the superiority of our proposed dynamic write-voltage design scheme and read-voltage optimization scheme with respect to the existing counterparts.
基金Supported by the National Natural Science Foundation of China under Grant No 11304384the Research Project of National University of Defense Technology under Grant No JC13-07-02
文摘Exploiting new concepts for dense, fast, and nonvolatile random access memory with reduced energy consump- tion is a significant issue for information technology. Here we design an ＇electrically written and optically read＇ information storage device employing BiFeO3/A u heterostruetures with strong absorption resonance. The electro- optic effect is the basis for the device design, which arises from the strong absorption resonance in BiFeO3/Au heterostructures and the electrically tunable significant birefringence of the BiFeO3 film. We first construct a sim- ulation calculation of the BiFeO3/Au structure spectrum and identify absorption resonance and electro-optical modulation characteristics. Following a micro scale partition, the surface reflected light intensity of different polarization units is calculated. The results depend on electric polarization states of the BiFeO3 film, thus BiFeO3/Au heterostructures can essentially be designed as a type of electrically written and optically read infor- mation storage device by utilizing the scanning near-field optical microscopy technology based on the conductive silicon cantilever tip with nanofabricated aperture. This work will shed light on information storage technology.
文摘The compact full custom layout design of a 16 kbit mask-programmable complementary metal oxide semiconductor (CMOS) read only memory (ROM) with low power dissipation is introduced. By optimizing storage cell size and peripheral circuit structure, the ROM has a small area of 0.050 mm2 with a power-delay product of 0.011 pJ/bit at +1.8 V. The high packing density and the excellent power-delay product have been achieved by using SMIC 0.18 μm 1P6M CMOS technology. A novel and simple sense amplifier/driver structure is presented which restores the signal full swing efficiently and reduces the signal rising time by 2.4 ns, as well as the memory access time. The ROM has a fast access time of 8.6 ns. As a consequence, the layout design not only can be embedded into microprocessor system as its program memory, but also can be fabricated individually as ROM ASIC.
文摘Reading,especially reading at text level,is a process of continuously repeating,consolidating and understanding words,phrases,and sentences.However,from the perspective of psycholinguistics,the compariosn and contrast of empirical data from experiments and researches would be evidences to support the idea that reading at text level is mainly influenced by readers' ability of identifying a text's cohesion and coherence,balancing the activation and suppression of background knowledge,as well as readers' utilization of working memory.Readers can make good use of these three aspects in order to advance their understanding of reading at text level.
