Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety...Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and precision.In recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments.Consequently,there is a growing need for comprehensive research on the dose rate effects of wide band gap materials.In response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and devices.This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices.Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided.Moreover,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes.The results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,respectively.This finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.展开更多
Novel properties and applications of multilayered nanowires(MNWs)urge researchers to understand their mechanical behaviors comprehensively.Using the molecular dynamic simulation,tensile behaviors of Ti/Ni MNWs are inv...Novel properties and applications of multilayered nanowires(MNWs)urge researchers to understand their mechanical behaviors comprehensively.Using the molecular dynamic simulation,tensile behaviors of Ti/Ni MNWs are investigated under a series of layer thickness values(1.31,2.34,and 7.17 nm)and strain rates(1.0×10^(8)s^(-1)≤ε≤5.0×10^(10)s^(-1)).The results demonstrate that deformation mechanisms of isopachous Ti/Ni MNWs are determined by the layer thickness and strain rate.Four distinct strain rate regions in the tensile process can be discovered,which are small,intermediate,critical,and large strain rate regions.As the strain rate increases,the initial plastic behaviors transform from interface shear(the shortest sample)and grain reorientation(the longest sample)in small strain rate region to amorphization of crystalline structures(all samples)in large strain rate region.Microstructure evolutions reveal that the disparate tensile behaviors are ascribed to the atomic fractions of different structures in small strain rate region,and only related to collapse of crystalline atoms in high strain rate region.A layer thickness-strain rate-dependent mechanism diagram is given to illustrate the couple effect on the plastic deformation mechanisms of the isopachous nanowires.The results also indicate that the modulation ratio significantly affects the tensile properties of unequal Ti/Ni MNWs,but barely affect the plastic deformation mechanisms of the materials.The observations from this work will promote theoretical researches and practical applications of Ti/Ni MNWs.展开更多
A low-dropout voltage regulator,LM2941,was irradiated by ^(60)Coγ-rays at various dose rates and biases for investigating the total dose and dose rate effects.The radiation responses show that the key electrical para...A low-dropout voltage regulator,LM2941,was irradiated by ^(60)Coγ-rays at various dose rates and biases for investigating the total dose and dose rate effects.The radiation responses show that the key electrical parameters, including its output and dropout voltage,and the maximum output current,are sensitive to total dose and dose rates, and are significantly degraded at low dose rate and zero bias.The integrated circuits damage change with the dose rates and biases,and the dose-rate effects are relative to its electric field.展开更多
In this study,to confirm the effect of confining pressure on dynamic mechanical behavior and failure modes of concrete,a split Hopkinson pressure bar dynamic loading device was utilized to perform dynamic compressive ...In this study,to confirm the effect of confining pressure on dynamic mechanical behavior and failure modes of concrete,a split Hopkinson pressure bar dynamic loading device was utilized to perform dynamic compressive experiments under confined and unconfined conditions.The confining pressure was achieved by applying a lateral metal sleeve on the testing specimen which was loaded in the axial direction.The experimental results prove that dynamic peak axial stress,dynamic peak lateral stress,and peak axial strain of concrete are strongly sensitive to the strain rate under confined conditions.Moreover,the failure patterns are significantly affected by the stress-loading rate and confining pressure.Concrete shows stronger strain rate effects under an unconfined condition than that under a confined condition.More cracks are created in concrete subjected to uniaxial dynamic compression at a higher strain rate,which can be explained by a thermal-activated mechanism.By contrast,crack generation is prevented by confinement.Fitting formulas of the dynamic peak stress and dynamic peak axial strain are established by considering strain rate effects(50–250 s-1)as well as the dynamic confining increase factor(DIFc).展开更多
The dynamic stress-strain curves of 93% tungsten (W) alloy in the forged state at strain rates up to (5 000 s^(-1)) and in the temperature range from 223 K to 473 K were measured with the split Hopkinson pressure bar ...The dynamic stress-strain curves of 93% tungsten (W) alloy in the forged state at strain rates up to (5 000 s^(-1)) and in the temperature range from 223 K to 473 K were measured with the split Hopkinson pressure bar (SHPB) technique. Based on the above experimental data a dynamic constitutive equation considering the effects of strain rate, temperature and the special microstructure of such a kind of W-alloy was proposed. The numerical simulation for the experimental process with this constitutive equation was also carried out, the results show that the constitutive relationship constructed in this paper is very satisfactory for representing the dynamic responsive behavior of material..展开更多
This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors(nMOSFETs) in silicon-on-insulator(SOI) technology.Using the subthreshold ...This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors(nMOSFETs) in silicon-on-insulator(SOI) technology.Using the subthreshold separation technology,the factor causing the threshold voltage shift was divided into two parts:trapped oxide charges and interface states,the effects of which are presented under irradiation.Furthermore,by analyzing the data,the threshold voltage shows a negative shift at first and then turns to positive shift when irradiation dose is lower.Additionally,the influence of the dose rate effects on threshold voltage is discussed.The research results show that the threshold voltage shift is more significant in low dose rate conditions,even for a low dose of100 krad(Si).The degeneration value of threshold voltage is 23.4%and 58.0%for the front-gate and the back-gate at the low dose rate,respectively.展开更多
In this work, natural neutron spectra at nine sites in Tibet region were measured using a multi-sphere neutron spectrometer. The altitude-dependence of the spectra total fluence rate and ambient dose equivalent rate w...In this work, natural neutron spectra at nine sites in Tibet region were measured using a multi-sphere neutron spectrometer. The altitude-dependence of the spectra total fluence rate and ambient dose equivalent rate were analyzed. From the normalized natural neutron spectra at different altitudes, the spectrum fractions for neutrons of greater than 0.1 MeV do not differ obviously, while those of the thermal neutrons differ greatly from each other. The total fluence rate, effective dose rate and the ambient dose equivalent rate varied with the altitude according to an exponential law.展开更多
We predict proton single event effect(SEE)error rates for the VATA160 ASIC chip on the Dark Matter Particle Explorer(DAMPE) to evaluate its radiation tolerance.Lacking proton test facilities,we built a Monte Carlo sim...We predict proton single event effect(SEE)error rates for the VATA160 ASIC chip on the Dark Matter Particle Explorer(DAMPE) to evaluate its radiation tolerance.Lacking proton test facilities,we built a Monte Carlo simulation tool named PRESTAGE to calculate the proton SEE cross-sections.PRESTAGE is based on the particle transport toolkit Geant4.It adopts a location-dependent strategy to derive the SEE sensitivity of the device from heavy-ion test data,which have been measured at the HI-13 tandem accelerator of the China Institute of Atomic Energy and the heavy-ion research facility in Lanzhou.The AP-8,SOLPRO,and August 1972 worst-case models are used to predict the average and peak proton fluxes on the DAMPE orbit.Calculation results show that the averaged proton SEE error rate for the VATA160 chip is approximately 2.17×10^(-5)/device/day.Worst-case error rates for the Van Allen belts and solar energetic particle events are 1-3 orders of magnitude higher than the averaged error rate.展开更多
基金National Natural Science Foundation of China(12205028)Natural Science Foundation of Sichuan Province(2022NSFSC1235)Young and Middle-aged Backbone Teacher Foundation of Chengdu University of Technology(10912-JXGG2022-08363)。
文摘Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and precision.In recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized environments.Consequently,there is a growing need for comprehensive research on the dose rate effects of wide band gap materials.In response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and devices.This paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor devices.Theoretical conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been provided.Moreover,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN diodes.The results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,respectively.This finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.
基金Project supported by the National Natural Science Foundation of China(Grant No.11572259)the Natural Science Foundation of Shaanxi Province,China(Grant No.2019JQ-827)the Scientific Research Program Funded by Shaanxi Provincial Education Department,China(Grant No.19JK0672).
文摘Novel properties and applications of multilayered nanowires(MNWs)urge researchers to understand their mechanical behaviors comprehensively.Using the molecular dynamic simulation,tensile behaviors of Ti/Ni MNWs are investigated under a series of layer thickness values(1.31,2.34,and 7.17 nm)and strain rates(1.0×10^(8)s^(-1)≤ε≤5.0×10^(10)s^(-1)).The results demonstrate that deformation mechanisms of isopachous Ti/Ni MNWs are determined by the layer thickness and strain rate.Four distinct strain rate regions in the tensile process can be discovered,which are small,intermediate,critical,and large strain rate regions.As the strain rate increases,the initial plastic behaviors transform from interface shear(the shortest sample)and grain reorientation(the longest sample)in small strain rate region to amorphization of crystalline structures(all samples)in large strain rate region.Microstructure evolutions reveal that the disparate tensile behaviors are ascribed to the atomic fractions of different structures in small strain rate region,and only related to collapse of crystalline atoms in high strain rate region.A layer thickness-strain rate-dependent mechanism diagram is given to illustrate the couple effect on the plastic deformation mechanisms of the isopachous nanowires.The results also indicate that the modulation ratio significantly affects the tensile properties of unequal Ti/Ni MNWs,but barely affect the plastic deformation mechanisms of the materials.The observations from this work will promote theoretical researches and practical applications of Ti/Ni MNWs.
文摘A low-dropout voltage regulator,LM2941,was irradiated by ^(60)Coγ-rays at various dose rates and biases for investigating the total dose and dose rate effects.The radiation responses show that the key electrical parameters, including its output and dropout voltage,and the maximum output current,are sensitive to total dose and dose rates, and are significantly degraded at low dose rate and zero bias.The integrated circuits damage change with the dose rates and biases,and the dose-rate effects are relative to its electric field.
基金supported by the National Natural Science Foundation of China(Nos.52027814 and 51839009)。
文摘In this study,to confirm the effect of confining pressure on dynamic mechanical behavior and failure modes of concrete,a split Hopkinson pressure bar dynamic loading device was utilized to perform dynamic compressive experiments under confined and unconfined conditions.The confining pressure was achieved by applying a lateral metal sleeve on the testing specimen which was loaded in the axial direction.The experimental results prove that dynamic peak axial stress,dynamic peak lateral stress,and peak axial strain of concrete are strongly sensitive to the strain rate under confined conditions.Moreover,the failure patterns are significantly affected by the stress-loading rate and confining pressure.Concrete shows stronger strain rate effects under an unconfined condition than that under a confined condition.More cracks are created in concrete subjected to uniaxial dynamic compression at a higher strain rate,which can be explained by a thermal-activated mechanism.By contrast,crack generation is prevented by confinement.Fitting formulas of the dynamic peak stress and dynamic peak axial strain are established by considering strain rate effects(50–250 s-1)as well as the dynamic confining increase factor(DIFc).
文摘The dynamic stress-strain curves of 93% tungsten (W) alloy in the forged state at strain rates up to (5 000 s^(-1)) and in the temperature range from 223 K to 473 K were measured with the split Hopkinson pressure bar (SHPB) technique. Based on the above experimental data a dynamic constitutive equation considering the effects of strain rate, temperature and the special microstructure of such a kind of W-alloy was proposed. The numerical simulation for the experimental process with this constitutive equation was also carried out, the results show that the constitutive relationship constructed in this paper is very satisfactory for representing the dynamic responsive behavior of material..
基金supported by the Project of National Natural Science Foundation of China(Grant Nos.61376099,11235008,61434007)the Specialized Research Fund for the Doctoral Program of High Education(Grant No.20130203130002)
文摘This work researched the impact of total dose irradiation on the threshold voltage of N-type metal oxide semiconductor field effect transistors(nMOSFETs) in silicon-on-insulator(SOI) technology.Using the subthreshold separation technology,the factor causing the threshold voltage shift was divided into two parts:trapped oxide charges and interface states,the effects of which are presented under irradiation.Furthermore,by analyzing the data,the threshold voltage shows a negative shift at first and then turns to positive shift when irradiation dose is lower.Additionally,the influence of the dose rate effects on threshold voltage is discussed.The research results show that the threshold voltage shift is more significant in low dose rate conditions,even for a low dose of100 krad(Si).The degeneration value of threshold voltage is 23.4%and 58.0%for the front-gate and the back-gate at the low dose rate,respectively.
基金Supported by the National Natural Science Foundation of China(No.11575294)
文摘In this work, natural neutron spectra at nine sites in Tibet region were measured using a multi-sphere neutron spectrometer. The altitude-dependence of the spectra total fluence rate and ambient dose equivalent rate were analyzed. From the normalized natural neutron spectra at different altitudes, the spectrum fractions for neutrons of greater than 0.1 MeV do not differ obviously, while those of the thermal neutrons differ greatly from each other. The total fluence rate, effective dose rate and the ambient dose equivalent rate varied with the altitude according to an exponential law.
基金supported by the National Natural Science Foundation of China(Nos.11179003,10975164,10805062,and 11005134)
文摘We predict proton single event effect(SEE)error rates for the VATA160 ASIC chip on the Dark Matter Particle Explorer(DAMPE) to evaluate its radiation tolerance.Lacking proton test facilities,we built a Monte Carlo simulation tool named PRESTAGE to calculate the proton SEE cross-sections.PRESTAGE is based on the particle transport toolkit Geant4.It adopts a location-dependent strategy to derive the SEE sensitivity of the device from heavy-ion test data,which have been measured at the HI-13 tandem accelerator of the China Institute of Atomic Energy and the heavy-ion research facility in Lanzhou.The AP-8,SOLPRO,and August 1972 worst-case models are used to predict the average and peak proton fluxes on the DAMPE orbit.Calculation results show that the averaged proton SEE error rate for the VATA160 chip is approximately 2.17×10^(-5)/device/day.Worst-case error rates for the Van Allen belts and solar energetic particle events are 1-3 orders of magnitude higher than the averaged error rate.
