This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))effect.The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana...This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))effect.The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana- lyzed using Fourier series analysis method.Considering the on-resistance effect,the formulas of the efficiency,output power,dc power dissipation,and fundamental load impedance are given from ideal current and voltage waveforms.For experimental verification,we designed and implemented a Class F power amplifier,which operates at 850 MHz using MGaAs/GaAs Heterostructure FET(HFET)device,and analyzed the measurement results.Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level.展开更多
为了研究Ga N开关类功率放大器（PA）的温度特性,通过开展一系列的温度测试来研究温度变化对该Ga N PA各个性能参数的具体影响。测试结果表明：首先,较高的温度（〉80℃）会使Ga N HEMT的电特性发生严重恶化,进而导致器件的性能和可靠...为了研究Ga N开关类功率放大器（PA）的温度特性,通过开展一系列的温度测试来研究温度变化对该Ga N PA各个性能参数的具体影响。测试结果表明：首先,较高的温度（〉80℃）会使Ga N HEMT的电特性发生严重恶化,进而导致器件的性能和可靠性显著下降。其次,对于该开关类Ga N PA来说,随着温度的持续升高,其功率附加效率（PAE）显著降低,不能再保持高效率。而且,随着温度的突变和冲击次数的增加,电路出现显著的退化甚至失效。这些都说明了温度的变化对PA的性能产生了很大的影响,开关类PA对温度的变化非常敏感,而且温度冲击对其性能影响更为显著。这些研究为PA的可靠性设计提供了重要指导。展开更多
文摘This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))effect.The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana- lyzed using Fourier series analysis method.Considering the on-resistance effect,the formulas of the efficiency,output power,dc power dissipation,and fundamental load impedance are given from ideal current and voltage waveforms.For experimental verification,we designed and implemented a Class F power amplifier,which operates at 850 MHz using MGaAs/GaAs Heterostructure FET(HFET)device,and analyzed the measurement results.Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level.
文摘为了研究Ga N开关类功率放大器（PA）的温度特性,通过开展一系列的温度测试来研究温度变化对该Ga N PA各个性能参数的具体影响。测试结果表明：首先,较高的温度（〉80℃）会使Ga N HEMT的电特性发生严重恶化,进而导致器件的性能和可靠性显著下降。其次,对于该开关类Ga N PA来说,随着温度的持续升高,其功率附加效率（PAE）显著降低,不能再保持高效率。而且,随着温度的突变和冲击次数的增加,电路出现显著的退化甚至失效。这些都说明了温度的变化对PA的性能产生了很大的影响,开关类PA对温度的变化非常敏感,而且温度冲击对其性能影响更为显著。这些研究为PA的可靠性设计提供了重要指导。
基金Supported by the National Natural Science Foundation of China (61822407,62074161,62004213)the National Key Research and Development Program of China under (2018YFE0125700)。
