To compensate for nonlinear distortion introduced by RF power amplifiers （PAs） with memory effects, two correlated models, namely an extended memory polynomial （EMP） model and a memory lookup table （LUT） model, ...To compensate for nonlinear distortion introduced by RF power amplifiers （PAs） with memory effects, two correlated models, namely an extended memory polynomial （EMP） model and a memory lookup table （LUT） model, are proposed for predistorter design. Two adaptive digital predistortion （ADPD） schemes with indirect learning architecture are presented. One adopts the EMP model and the recursive least square （RLS） algorithm, and the other utilizes the memory LUT model and the least mean square （LMS） algorithm. Simulation results demonstrate that the EMP-based ADPD yields the best linearization performance in terms of suppressing spectral regrowth. It is also shown that the ADPD based on memory LUT makes optimum tradeoff between performance and computational complexity.展开更多
A robust digital predistortion(DPD)technique utilizing negative feedback iteration is introduced for linearizing power amplifiers(PAs)in long term evolution(LTE)/5G systems.Different from the conventional direct learn...A robust digital predistortion(DPD)technique utilizing negative feedback iteration is introduced for linearizing power amplifiers(PAs)in long term evolution(LTE)/5G systems.Different from the conventional direct learning and indirect learning structure,the proposed DPD suggests a two-step method to identify the predistortion.Firstly,a negative feedback based iteration is used to estimate the optimal DPD signal.Then the corresponding DPD parameters are extracted by forward modeling with the input signal and optimal DPD signal.The iteration can be applied to both single-band and dual-band PAs,which will achieve superior linear performance than the conventional direct learning DPD while having a relatively low computational complexity.The measurement is carried out on a broadband Doherty PA(DPA)with a 200 MHz bandwidth LTE signal at 2.1 GHz,and on a 5G DPA with two 10 MHz LTE signals at 3.4/3.6 GHz for validation in dual-band scenarios.展开更多
In this paper, an envelope Hammerstein （EH） model is introduced to describe dynamic input -output characteristics of RF power amplifiers. In the modeling approach, we use a new truncation method and an established n...In this paper, an envelope Hammerstein （EH） model is introduced to describe dynamic input -output characteristics of RF power amplifiers. In the modeling approach, we use a new truncation method and an established nonlinear time series method to determine model structure. Then, we discuss the process of model parameter extraction in detailed. Finally, a 2 W WCDMA power amplifier is measured to verify the performance of EH model, and good agreement between model output and measurement result shows our model can accurately predict output characteristic of the power amplifier.展开更多
In this paper,a 5G wideband power amplifier(PA)with bandpass filtering response is synthesized using a bandwidth-extended bandpass filter as the matching network(MN).In this structure,the bandwidth(θ_(C))is defined a...In this paper,a 5G wideband power amplifier(PA)with bandpass filtering response is synthesized using a bandwidth-extended bandpass filter as the matching network(MN).In this structure,the bandwidth(θ_(C))is defined as a variable in the closedform equations provided by the microstrip bandpass filter.It can be extended over a wide range only by changing the characteristic impedances of the structure.Different from the other wideband MNs,the extension of bandwidth does not increase the complexity of the structure(order n is fixed).In addition,based on the bandwidth-extended structure,the wideband design of bandpass filtering PA is not limited to the fixed bandwidth of the specific filter structure.The theoretical analysis of the MN and the design flow of the PA are provided in this design.The fabricated bandpass filtering PA can support almost one-octave bandwidth(2-3.8 GHz),covering the two 5G bands(n41 and n78).The drain efficiency of 47%-60%and output power higher than 40 dBm are measured.Good frequency selectivity in S-parameter measurements can be observed.展开更多
For the advantages of easy realization and rapidly intelligent response,the one-cycle control was applied in five-phase six-leg switching power amplifier for magnetic bearing.This paper improves the one-cycle control ...For the advantages of easy realization and rapidly intelligent response,the one-cycle control was applied in five-phase six-leg switching power amplifier for magnetic bearing.This paper improves the one-cycle control considering resistance voltage drop and derives its mathematical models.The improved algorithm is compared with the former one.The simulation and experimental results show that the improved algorithm can effectively reduce the output current ripple,achieve good tracking of the given current,improve the control accuracy,and verify the effectiveness and superiority of the method.展开更多
This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadb...This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.展开更多
The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improve...The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improved. The Class-F PA reduces the overlap of drain voltage and current by tuning harmonic impedance so that high efficiency is achieved. This paper begins with the principle of class-F PA, regards the third harmonic voltage as an independent variable, analyzes the influence of the third harmonic on fundamental, and points out how drain efficiency and output power vary with the third harmonic voltage with an I-V knee effect. Finally, the best third harmonic impedance is found mathematically. We compare our results with the Loadpull technique in advanced design system environment and conclude that an optimized third harmonic impedance is open in an ideal case, while it is not at an open point with the I-V knee effect, and the drain efficiency with optimized third harmonic impedance is 4% higher than that with the third harmonic open.展开更多
Amplified spontaneous emission （ASE） in diode laser pumped double-clad fiber power amplifiers is studied experimentally, The dependences of ASE on fiber length and cross section of active core are discussed and the ...Amplified spontaneous emission （ASE） in diode laser pumped double-clad fiber power amplifiers is studied experimentally, The dependences of ASE on fiber length and cross section of active core are discussed and the variations of ASE power as the function of pumping and signal power are investigated. There are indications that long fibers with large mode area need stronger input signals to suppress ASE. It is shown that a 150 mW input signal can suppress the ASE by 40 dB in a 4 m large mode area fiber, while to efficiently suppress the ASE in a 10 m fiber, stronger input signal is needed. 12.5 W and 16.1 W single frequency CW output power are obtained from 4 m fiber and 10 m fiber respectively. No stimulated Brillouin scattering （SBS） was observed展开更多
In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development ...In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development of silicon-based THz PAs,mainly including silicon-based PAs with operating frequencies covering 100–300 GHz,are summarized in this paper.Particularly,we design an LC-balun-based two-stage differential cascode PA with a center frequency of 150 GHz and an output power of 14 dBm.Based on a Marchand balun,we report a 220 GHz three-stage differential cascode PA with a saturated output power of 9.5 dBm.To further increase the output power of THz PA,based on a four-way differential power combining technique,we report a 211–263 GHz dual-LC-tank-based broadband PA with a recorded 14.7 dBm Psat and 16.4 dB peak gain.All the above circuits are designed in a standard 130 nm silicon germanium(SiGe)BiCMOS process.展开更多
A broadband power amplifier is required to cover the full range of cellular frequency band—from 700 MHz to 2600 MHz—in a base station that supports multiple frequency bands simultaneously. Conventional laterally dif...A broadband power amplifier is required to cover the full range of cellular frequency band—from 700 MHz to 2600 MHz—in a base station that supports multiple frequency bands simultaneously. Conventional laterally diffused metal oxide semiconductor （LDMOS） transistors support narrow band applications up to 3 GHz. However, they cannot operate beyond 1 GHz in broadband applications. GaN transistors have much higher power density and operational frequency compared with LDMOS. Therefore, they are ideal for broadband amplifiers that support multiple bands. Theories for designing broadband amplifiers are introduced in this article, and a 500-2500 MHz 60 W GaN amplifier is discussed.展开更多
In this paper,a simple adaptive power dividing function for the design of a dual-input Doherty power amplifier(DPA)is presented.In the presented approaches,the signal separation function(SSF)at different frequency poi...In this paper,a simple adaptive power dividing function for the design of a dual-input Doherty power amplifier(DPA)is presented.In the presented approaches,the signal separation function(SSF)at different frequency points can be characterized by a polynomial.And in the practical test,the coefficients of SSF can be determined by measuring a small number of data points of input power.Same as other dualinput DPAs,the proposed approach can also achieve high output power and back-off efficiency in a broadband operation band by adjusting the power distribution ratio flexibly.Finally,a 1.5-2.5 GHz highefficiency dual-input Doherty power amplifier is implemented according to this approach.The test results show that the peak power is 48.6-49.7d Bm,and the 6-d B back-off efficiency is 51.0-67.0%,and the saturation efficiency is 52.4-74.6%.The digital predistortion correction is carried out at the frequency points of 1.8/2.1GHz,and the adjacent channel power ratio is lower than-54.5d Bc.Simulation and experiment results can verify the effectiveness and correctness of the proposed method.展开更多
A review on the progress of powerful 2 μm silica fiber sources in past decades is presented. We review the state-of-the-art records and representative achievements of 2 μm high-average-power continuous- wave, pulsed...A review on the progress of powerful 2 μm silica fiber sources in past decades is presented. We review the state-of-the-art records and representative achievements of 2 μm high-average-power continuous- wave, pulsed fiber lasers and amplifiers, and powerful superfluorescent sources. Challenges which limit the further power scaling of 2 μm silica fiber sources are discussed, including pumping brightness limitation, thermal problem and nonlinear effects. Potential and promising roadmaps to go beyond these limitations, like tandem pumping and beam combining, are discussed. Prospects of powerful 2 μm silica fiber sources are also presented in the end of paper.展开更多
For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive ...For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is proposed.The effect of the parasitics is analyzed based on calculation and the parallel bonding is proposed.The storage capacitance of power supply is calculated quantitatively to provide large pulse current.To ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is proposed.Finally,a prototype is built to verify the drain modulation circuit design.The experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.展开更多
The vertical position of plasma in the HT-7U Tokamak is inherently unstable. In order to realize active stabilization, the response rate of the high-power high-frequency amplifier feeding the active control coils must...The vertical position of plasma in the HT-7U Tokamak is inherently unstable. In order to realize active stabilization, the response rate of the high-power high-frequency amplifier feeding the active control coils must be fast enough. This paper analyzes the paralleling scheme of the power amplifier through two kinds of control mode. One is the synchronous control; the other is the asynchronous control. Via the comparison of the two kinds of control mode, both of their characteristics are given in the text. At last, the analyzed result is verified by a small power experiment.展开更多
Advanced wireless standards of communication like 3GPP and LTE are becoming more and more efficient and with this evolution of communication systems mobile equipment is also become smaller and smaller. Power amplifier...Advanced wireless standards of communication like 3GPP and LTE are becoming more and more efficient and with this evolution of communication systems mobile equipment is also become smaller and smaller. Power amplifier designing has become a very crucial task in this era where efficiency and size are the main concern of any designer. In this paper we have design and analyzed X-band Class E Metal-semiconductor field effect transistor(MESFET) based Power Amplifier. This device targets the devices which use OFDM technique to improve their spectral efficiency for the next generation communication systems. Microstrip lines are used to achieve small size for our design instead of lumped components. Load Pull measurements are used to get MESFET input and output impedances optimum values. For linear and non linear operation small signal mathematical model of the design is used. To reduce thermal losses FR4 substrate is used to increase PA efficiency. Our designs shows small values of input and output return loss of about-22.3d B and-23.716 d B achieving a high gain of about25.6 d B respectively, with PAE of about 30 % having stability factor greater than 1 and 21.894 d Bm of output power.展开更多
With targets of cost reduction per bit and high energy efficiency,5G and beyond call for innovation in the mmWave transmitter architecture and the power amplifier(PA)circuit.To illustrate these points,this paper first...With targets of cost reduction per bit and high energy efficiency,5G and beyond call for innovation in the mmWave transmitter architecture and the power amplifier(PA)circuit.To illustrate these points,this paper firstly explains the benefits and design implications of the hybrid beamforming structure in terms of the mmWave spectrum characteristics,energy efficiency,data rate,communication capacity,coverage and implementation technology choices.Then after reviewing the techniques to improve the power amplifier(PA)output power and efficiency,the design considerations and test results of 60 GHz and 90 GHz mmWave PAs in bulk complementary metal oxide semiconductor(CMOS)process are shown.展开更多
An Ion Cyclotron Range of Frequency （ICRF） system with a radio frequency （RF） power of 4×1.5 MW was developed for the Experimental Advanced Superconducting Tokamak （EAST）. High RF power transmitters were de...An Ion Cyclotron Range of Frequency （ICRF） system with a radio frequency （RF） power of 4×1.5 MW was developed for the Experimental Advanced Superconducting Tokamak （EAST）. High RF power transmitters were designed as a part of the research and development （R^D） for an ICRF system with long pulse operation at megawatt levels in a frequency range of 25 MHz to 70 MHz. Studies presented in this paper cover the following parts of the high power transmitter： the three staged high power amplifier, which is composed of a 5 kW wide- band solid state amplifier, a 100 kW tetrode drive stage amplifier and a 1.5 MW tetrode final stage amplifier, and the DC high voltage power supply （HVPS）. Based on engineering design and static examinations, the RF transmitters were tested using a matched dummy load where an RF output power of 1.5 MW was achieved. The transmitters provide 6 MW RF power in primary phase and will reach a level up to 12 MW after a later upgrade. The transmitters performed successfully in stable operations in EAST and HT-7 devices. Up to 1.8 MW of RF power was injected into plasmas in EAST ICRF heating experiments during the 2010 autumn campaign and plasma performance was greatly improved.展开更多
In this paper, we studied incoherent and coherent beam combining for the master oscillator/power amplifier （MOPA） system with stimulated Brillouin scattering （SBS） mirror. Optic field intensity distributions in th...In this paper, we studied incoherent and coherent beam combining for the master oscillator/power amplifier （MOPA） system with stimulated Brillouin scattering （SBS） mirror. Optic field intensity distributions in the near and far field are numerically calculated for the two kinds of system. The results show that good beam quality in the far field could be obtained. It provides a theoretical basis for experimental research in the future.展开更多
By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimi...By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.展开更多
Most satellite digital radio （SDR） systems use orthogonal frequency-division multiplexing （OFDM） transmission, which means that variable envelope signals are distorted by the RF power amplifier （PA）. It is custo...Most satellite digital radio （SDR） systems use orthogonal frequency-division multiplexing （OFDM） transmission, which means that variable envelope signals are distorted by the RF power amplifier （PA）. It is customary to back off the input power to the PA to avoid the PA nonlinear region of operation. In this way, linearity can be achieved at the cost of power efficiency. Another attractive option is to use a linearizer, which compensates for the nonlinear effects of the PA. In this paper, an OFDM transmitter conforming to European Telecommunications Standard Institute SDR Technical Specifications 2007-2008 was designed and implemented on a low-cost field-programmable gate array （FPGA） platform. A weakly nonlinear PA, operating in the L-band SDR frequency, was used for signal transmission. An adaptive linearizer was designed and implemented on the same FPGA device using digital predistortion to correct the undesired effects of the PA on the transmitted signal. Test results show that spectral distortion can be suppressed between 6-9 dB using the designed linearizer when the PA is driven close to its saturation region.展开更多
文摘To compensate for nonlinear distortion introduced by RF power amplifiers （PAs） with memory effects, two correlated models, namely an extended memory polynomial （EMP） model and a memory lookup table （LUT） model, are proposed for predistorter design. Two adaptive digital predistortion （ADPD） schemes with indirect learning architecture are presented. One adopts the EMP model and the recursive least square （RLS） algorithm, and the other utilizes the memory LUT model and the least mean square （LMS） algorithm. Simulation results demonstrate that the EMP-based ADPD yields the best linearization performance in terms of suppressing spectral regrowth. It is also shown that the ADPD based on memory LUT makes optimum tradeoff between performance and computational complexity.
基金National Key R&D Program of China under Grant No.2018YFB1801603 and No.2017YFF0206201National Sci⁃ence and Technology Major Project under Grant 2017ZX03001024,NSFC under Grant No.61801259 and Beijing National Research Center for Infor⁃mation Science and Technology(BNRist).
文摘A robust digital predistortion(DPD)technique utilizing negative feedback iteration is introduced for linearizing power amplifiers(PAs)in long term evolution(LTE)/5G systems.Different from the conventional direct learning and indirect learning structure,the proposed DPD suggests a two-step method to identify the predistortion.Firstly,a negative feedback based iteration is used to estimate the optimal DPD signal.Then the corresponding DPD parameters are extracted by forward modeling with the input signal and optimal DPD signal.The iteration can be applied to both single-band and dual-band PAs,which will achieve superior linear performance than the conventional direct learning DPD while having a relatively low computational complexity.The measurement is carried out on a broadband Doherty PA(DPA)with a 200 MHz bandwidth LTE signal at 2.1 GHz,and on a 5G DPA with two 10 MHz LTE signals at 3.4/3.6 GHz for validation in dual-band scenarios.
文摘In this paper, an envelope Hammerstein （EH） model is introduced to describe dynamic input -output characteristics of RF power amplifiers. In the modeling approach, we use a new truncation method and an established nonlinear time series method to determine model structure. Then, we discuss the process of model parameter extraction in detailed. Finally, a 2 W WCDMA power amplifier is measured to verify the performance of EH model, and good agreement between model output and measurement result shows our model can accurately predict output characteristic of the power amplifier.
基金supported by National Natural Science Foundations of China (No.61971052 and No.U20A20203)Key Research and Development Project of Guangdong Province (2020B0101080001)
文摘In this paper,a 5G wideband power amplifier(PA)with bandpass filtering response is synthesized using a bandwidth-extended bandpass filter as the matching network(MN).In this structure,the bandwidth(θ_(C))is defined as a variable in the closedform equations provided by the microstrip bandpass filter.It can be extended over a wide range only by changing the characteristic impedances of the structure.Different from the other wideband MNs,the extension of bandwidth does not increase the complexity of the structure(order n is fixed).In addition,based on the bandwidth-extended structure,the wideband design of bandpass filtering PA is not limited to the fixed bandwidth of the specific filter structure.The theoretical analysis of the MN and the design flow of the PA are provided in this design.The fabricated bandpass filtering PA can support almost one-octave bandwidth(2-3.8 GHz),covering the two 5G bands(n41 and n78).The drain efficiency of 47%-60%and output power higher than 40 dBm are measured.Good frequency selectivity in S-parameter measurements can be observed.
基金supported by the National Science Foundation of China(No.51607096)。
文摘For the advantages of easy realization and rapidly intelligent response,the one-cycle control was applied in five-phase six-leg switching power amplifier for magnetic bearing.This paper improves the one-cycle control considering resistance voltage drop and derives its mathematical models.The improved algorithm is compared with the former one.The simulation and experimental results show that the improved algorithm can effectively reduce the output current ripple,achieve good tracking of the given current,improve the control accuracy,and verify the effectiveness and superiority of the method.
文摘This paper presents a brief overview of several promising design technologies for high efficiency silicon-based radio frequency （RF） power amplifiers （PAs） as well as the use of these technologies in mobile broadband wireless communications. Four important aspects of PA design are addressed in this paper. First, we look at class-E PA design equations and provide an example of a class-E PA that achieves efficiency of 65-70% at 2.4 GHz. Then, we discuss state-of-the-art envelope tracking （ET） design for monolithic wideband RF mobile transmitter applications. A brief overview of Doherty PA design for the next-generation wireless handset applications is then given. Towards the end of the paper, we discuss an inherently broadband and highly efficient class-J PA design targeting future multi-band multi-standard wireless communication protocols.
文摘The appearance of third-generation semiconductors represented by gallium nitride （GaN） material greatly improves the output power of a power amplifier （PA）, but the efficiency of the PA needs to be further improved. The Class-F PA reduces the overlap of drain voltage and current by tuning harmonic impedance so that high efficiency is achieved. This paper begins with the principle of class-F PA, regards the third harmonic voltage as an independent variable, analyzes the influence of the third harmonic on fundamental, and points out how drain efficiency and output power vary with the third harmonic voltage with an I-V knee effect. Finally, the best third harmonic impedance is found mathematically. We compare our results with the Loadpull technique in advanced design system environment and conclude that an optimized third harmonic impedance is open in an ideal case, while it is not at an open point with the I-V knee effect, and the drain efficiency with optimized third harmonic impedance is 4% higher than that with the third harmonic open.
基金the Ministerial Level Advanced Research Foundation (41302010107)
文摘Amplified spontaneous emission （ASE） in diode laser pumped double-clad fiber power amplifiers is studied experimentally, The dependences of ASE on fiber length and cross section of active core are discussed and the variations of ASE power as the function of pumping and signal power are investigated. There are indications that long fibers with large mode area need stronger input signals to suppress ASE. It is shown that a 150 mW input signal can suppress the ASE by 40 dB in a 4 m large mode area fiber, while to efficiently suppress the ASE in a 10 m fiber, stronger input signal is needed. 12.5 W and 16.1 W single frequency CW output power are obtained from 4 m fiber and 10 m fiber respectively. No stimulated Brillouin scattering （SBS） was observed
基金supported in part by the National Natural Science Foundation of China under Grant Nos.62101117 and 62188102in part by ZTE Industry-University-Institute Cooperation Fundsin part by the Project funded by China Postdoctoral Science Foundation under Grant Nos.2021M700763 and 2022T150113.
文摘In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development of silicon-based THz PAs,mainly including silicon-based PAs with operating frequencies covering 100–300 GHz,are summarized in this paper.Particularly,we design an LC-balun-based two-stage differential cascode PA with a center frequency of 150 GHz and an output power of 14 dBm.Based on a Marchand balun,we report a 220 GHz three-stage differential cascode PA with a saturated output power of 9.5 dBm.To further increase the output power of THz PA,based on a four-way differential power combining technique,we report a 211–263 GHz dual-LC-tank-based broadband PA with a recorded 14.7 dBm Psat and 16.4 dB peak gain.All the above circuits are designed in a standard 130 nm silicon germanium(SiGe)BiCMOS process.
文摘A broadband power amplifier is required to cover the full range of cellular frequency band—from 700 MHz to 2600 MHz—in a base station that supports multiple frequency bands simultaneously. Conventional laterally diffused metal oxide semiconductor （LDMOS） transistors support narrow band applications up to 3 GHz. However, they cannot operate beyond 1 GHz in broadband applications. GaN transistors have much higher power density and operational frequency compared with LDMOS. Therefore, they are ideal for broadband amplifiers that support multiple bands. Theories for designing broadband amplifiers are introduced in this article, and a 500-2500 MHz 60 W GaN amplifier is discussed.
基金supported by National Natural Science Foundation of China(No.62001061)。
文摘In this paper,a simple adaptive power dividing function for the design of a dual-input Doherty power amplifier(DPA)is presented.In the presented approaches,the signal separation function(SSF)at different frequency points can be characterized by a polynomial.And in the practical test,the coefficients of SSF can be determined by measuring a small number of data points of input power.Same as other dualinput DPAs,the proposed approach can also achieve high output power and back-off efficiency in a broadband operation band by adjusting the power distribution ratio flexibly.Finally,a 1.5-2.5 GHz highefficiency dual-input Doherty power amplifier is implemented according to this approach.The test results show that the peak power is 48.6-49.7d Bm,and the 6-d B back-off efficiency is 51.0-67.0%,and the saturation efficiency is 52.4-74.6%.The digital predistortion correction is carried out at the frequency points of 1.8/2.1GHz,and the adjacent channel power ratio is lower than-54.5d Bc.Simulation and experiment results can verify the effectiveness and correctness of the proposed method.
基金supported by the National Nature Science Foundation of China under Grant No.61322505Innovation Foundation for Graduates of National University of Defense Technology under Grant No.B130704
文摘A review on the progress of powerful 2 μm silica fiber sources in past decades is presented. We review the state-of-the-art records and representative achievements of 2 μm high-average-power continuous- wave, pulsed fiber lasers and amplifiers, and powerful superfluorescent sources. Challenges which limit the further power scaling of 2 μm silica fiber sources are discussed, including pumping brightness limitation, thermal problem and nonlinear effects. Potential and promising roadmaps to go beyond these limitations, like tandem pumping and beam combining, are discussed. Prospects of powerful 2 μm silica fiber sources are also presented in the end of paper.
基金supported by the Pri⁃mary Research&Development Plan of Jiangsu Province(Nos.BE2022070,BE2022070-2).
文摘For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is proposed.The effect of the parasitics is analyzed based on calculation and the parallel bonding is proposed.The storage capacitance of power supply is calculated quantitatively to provide large pulse current.To ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is proposed.Finally,a prototype is built to verify the drain modulation circuit design.The experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.
基金The project supported by the National Meg-Science Engineering Project of Chinese Goverment
文摘The vertical position of plasma in the HT-7U Tokamak is inherently unstable. In order to realize active stabilization, the response rate of the high-power high-frequency amplifier feeding the active control coils must be fast enough. This paper analyzes the paralleling scheme of the power amplifier through two kinds of control mode. One is the synchronous control; the other is the asynchronous control. Via the comparison of the two kinds of control mode, both of their characteristics are given in the text. At last, the analyzed result is verified by a small power experiment.
基金supported by the National Natural Science Foundation of China (Grant no.61571063, 61472357, 61501100)
文摘Advanced wireless standards of communication like 3GPP and LTE are becoming more and more efficient and with this evolution of communication systems mobile equipment is also become smaller and smaller. Power amplifier designing has become a very crucial task in this era where efficiency and size are the main concern of any designer. In this paper we have design and analyzed X-band Class E Metal-semiconductor field effect transistor(MESFET) based Power Amplifier. This device targets the devices which use OFDM technique to improve their spectral efficiency for the next generation communication systems. Microstrip lines are used to achieve small size for our design instead of lumped components. Load Pull measurements are used to get MESFET input and output impedances optimum values. For linear and non linear operation small signal mathematical model of the design is used. To reduce thermal losses FR4 substrate is used to increase PA efficiency. Our designs shows small values of input and output return loss of about-22.3d B and-23.716 d B achieving a high gain of about25.6 d B respectively, with PAE of about 30 % having stability factor greater than 1 and 21.894 d Bm of output power.
基金supported by the National Natural Science Foundations of China (Nos. 61306030, 61674037)the National Key R&D Program of China (Nos.2016YFC0800400, 2018YFE0205900)the National Science and Technology Major Project (No. 2018ZX03001008)
文摘With targets of cost reduction per bit and high energy efficiency,5G and beyond call for innovation in the mmWave transmitter architecture and the power amplifier(PA)circuit.To illustrate these points,this paper firstly explains the benefits and design implications of the hybrid beamforming structure in terms of the mmWave spectrum characteristics,energy efficiency,data rate,communication capacity,coverage and implementation technology choices.Then after reviewing the techniques to improve the power amplifier(PA)output power and efficiency,the design considerations and test results of 60 GHz and 90 GHz mmWave PAs in bulk complementary metal oxide semiconductor(CMOS)process are shown.
基金supported by National Magnetic Confinement Fusion Science Program of China (No.2010GB110000)partly by Knowledge Innovation Program of the Chinese Academy of Sciences (No.Y05FCQ1126)partly supported by the Japan Society for the Promotion of Science-Chinese Academy of Sciences (JSPS-CAS) Core University Program on Plasma Physics and Nuclear Fusion
文摘An Ion Cyclotron Range of Frequency （ICRF） system with a radio frequency （RF） power of 4×1.5 MW was developed for the Experimental Advanced Superconducting Tokamak （EAST）. High RF power transmitters were designed as a part of the research and development （R^D） for an ICRF system with long pulse operation at megawatt levels in a frequency range of 25 MHz to 70 MHz. Studies presented in this paper cover the following parts of the high power transmitter： the three staged high power amplifier, which is composed of a 5 kW wide- band solid state amplifier, a 100 kW tetrode drive stage amplifier and a 1.5 MW tetrode final stage amplifier, and the DC high voltage power supply （HVPS）. Based on engineering design and static examinations, the RF transmitters were tested using a matched dummy load where an RF output power of 1.5 MW was achieved. The transmitters provide 6 MW RF power in primary phase and will reach a level up to 12 MW after a later upgrade. The transmitters performed successfully in stable operations in EAST and HT-7 devices. Up to 1.8 MW of RF power was injected into plasmas in EAST ICRF heating experiments during the 2010 autumn campaign and plasma performance was greatly improved.
文摘In this paper, we studied incoherent and coherent beam combining for the master oscillator/power amplifier （MOPA） system with stimulated Brillouin scattering （SBS） mirror. Optic field intensity distributions in the near and far field are numerically calculated for the two kinds of system. The results show that good beam quality in the far field could be obtained. It provides a theoretical basis for experimental research in the future.
基金supported by the Innovation Fund of State Key Lab of Millimeter Waves
文摘By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.
文摘Most satellite digital radio （SDR） systems use orthogonal frequency-division multiplexing （OFDM） transmission, which means that variable envelope signals are distorted by the RF power amplifier （PA）. It is customary to back off the input power to the PA to avoid the PA nonlinear region of operation. In this way, linearity can be achieved at the cost of power efficiency. Another attractive option is to use a linearizer, which compensates for the nonlinear effects of the PA. In this paper, an OFDM transmitter conforming to European Telecommunications Standard Institute SDR Technical Specifications 2007-2008 was designed and implemented on a low-cost field-programmable gate array （FPGA） platform. A weakly nonlinear PA, operating in the L-band SDR frequency, was used for signal transmission. An adaptive linearizer was designed and implemented on the same FPGA device using digital predistortion to correct the undesired effects of the PA on the transmitted signal. Test results show that spectral distortion can be suppressed between 6-9 dB using the designed linearizer when the PA is driven close to its saturation region.
