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Programmable agile beam steering based on a liquid crystal prism 被引量:1
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作者 徐林 黄子强 杨若夫 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第11期317-322,共6页
To meet the application need for agile precision beam steering, a novel liquid crystal prism device with a simple structure, convenient control, low cost and applicable performance is presented, and analysed theoretic... To meet the application need for agile precision beam steering, a novel liquid crystal prism device with a simple structure, convenient control, low cost and applicable performance is presented, and analysed theoretically and experimentally. The relationships between the optical path and the thickness of the liquid crystal cell under different voltages are investigated quantitatively by using a theoretical model. Analysis results show that the optical path profile of the liquid crystal prism has a quasi-linear slope and the standard deviation of the linear slope is less than 16 nm. The slope ratio can be changed by a voltage, which achieves the programmable beam steering and control. Practical liquid crystal prism devices are fabricated. Their deflection angles and wavefront profiles with different voltages are experimentally tested. The results are in good agreement with the simulated results. The results imply that the agile beam steering in a scope of 100μrad with a micro-rad resolution is substantiated in the device. The two-dimensional beam steering is also achieved by cascading two liquid crystal prism devices. 展开更多
关键词 liquid crystal polarization devices beam steering optical scanner
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Electrical and dielectric characterization of Au/ZnO/n-Si device depending frequency and voltage
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作者 I Orak A Kocyigit S Ahndal 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第2期477-483,共7页
Au/Zn O/n-type Si device is obtained using atomic layer deposition(ALD) for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state(Nss), barrier height(Φb), series res... Au/Zn O/n-type Si device is obtained using atomic layer deposition(ALD) for Zn O layer, and some main electrical parameters are investigated, such as surface/interface state(Nss), barrier height(Φb), series resistance(Rs), donor concentration(Nd), and dielectric characterization depending on frequency or voltage. These parameters are acquired by use of impedance spectroscopy measurements at frequencies ranging from 10 k Hz to 1 MHz and the direct current(DC) bias voltages in a range from-2 V to +2 V at room temperature are used. The main electrical parameters and dielectric parameters,such as dielectric constant(ε"), dielectric loss(ε"), loss tangent(tan δ), the real and imaginary parts of electric modulus(M and M), and alternating current(AC) electrical conductivity(σ) are affected by changing voltage and frequency. The characterizations show that some main electrical parameters usually decrease with increasing frequency because charge carriers at surface states have not enough time to fallow an external AC signal at high frequencies, and all dielectric parameters strongly depend on the voltage and frequency especially in the depletion and accumulation regions. Consequently, it can be concluded that interfacial polarization and interface charges can easily follow AC signal at low frequencies. 展开更多
关键词 Au/ZnO/n–Si device dielectric properties polarization process frequency and voltage dependence
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