The ground-state energy level （GEL） and electron distribution of GaAs pseudomorphic high-electron-mobility transistors （PHEMTs） are analyzed by a self-consistent solution to the Schrodinger-Poisson equations. The ...The ground-state energy level （GEL） and electron distribution of GaAs pseudomorphic high-electron-mobility transistors （PHEMTs） are analyzed by a self-consistent solution to the Schrodinger-Poisson equations. The indium composition and thickness of the InGaAs channel are optimized according to the GEL position. The GEL position is not in direct proportion to 1/d^2 （d is the channel thickness） by considering the influence of electron distribution in the InGaAs channel. Indium composition 0.22 and channel thickness 9 nm are obtained by considering the mismatch between InGaAs and AlGaAs. Several PHEMT samples are grown according to the theoretical results and mobility 6300 cm^2 /V.s is achieved.展开更多
In this paper,size and shape optimization problem of a machine gun system is addressed with an efficient hybrid method,in which a novel and flexible mesh morphing technique is employed to achieve fast parameterization...In this paper,size and shape optimization problem of a machine gun system is addressed with an efficient hybrid method,in which a novel and flexible mesh morphing technique is employed to achieve fast parameterization and modification of complexity structure without going back to CAD for reconstruction of geometric models or to finite element analysis（ FEA） for remodeling. Design of experiments（ DOE） and response surface method（ RSM） are applied to approximate the constitutive parameters of a machine gun system based on experimental tests. Further FEA,secondary development technique and genetic algorithm（ GA） are introduced to find all the optimal solutions in one go and the optimal design of the demonstrated machine gun system is obtained. Results of the rigid-flexible coupling dynamic analysis and exterior ballistics calculation validate the proposed methodology,which is relatively time-saving,reliable and has the potential to solve similar problems.展开更多
文摘The ground-state energy level （GEL） and electron distribution of GaAs pseudomorphic high-electron-mobility transistors （PHEMTs） are analyzed by a self-consistent solution to the Schrodinger-Poisson equations. The indium composition and thickness of the InGaAs channel are optimized according to the GEL position. The GEL position is not in direct proportion to 1/d^2 （d is the channel thickness） by considering the influence of electron distribution in the InGaAs channel. Indium composition 0.22 and channel thickness 9 nm are obtained by considering the mismatch between InGaAs and AlGaAs. Several PHEMT samples are grown according to the theoretical results and mobility 6300 cm^2 /V.s is achieved.
基金Supported by the National Natural Science Foundation of China(51376090,51676099)
文摘In this paper,size and shape optimization problem of a machine gun system is addressed with an efficient hybrid method,in which a novel and flexible mesh morphing technique is employed to achieve fast parameterization and modification of complexity structure without going back to CAD for reconstruction of geometric models or to finite element analysis（ FEA） for remodeling. Design of experiments（ DOE） and response surface method（ RSM） are applied to approximate the constitutive parameters of a machine gun system based on experimental tests. Further FEA,secondary development technique and genetic algorithm（ GA） are introduced to find all the optimal solutions in one go and the optimal design of the demonstrated machine gun system is obtained. Results of the rigid-flexible coupling dynamic analysis and exterior ballistics calculation validate the proposed methodology,which is relatively time-saving,reliable and has the potential to solve similar problems.
