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题名遵义市新蒲新区甘薯高产示范种植技术及效果分析
被引量：1
- 1
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作者
张显东
令狐丹丹
韩克妮
刘琰
徐野
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机构
遵义市新蒲新区管理委员会农业农村局
遵义市新蒲新区喇叭镇农业服务中心
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出处
《现代农业科技》
2024年第13期201-204,共4页
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文摘
甘薯高产稳产、适应性广、抗逆性强、营养丰富、用途广泛,是世界上重要的粮食作物之一。为了提高甘薯产量,促使农业增效、农民增收,保障粮食生产安全。本文从科学选种、培育壮苗、深耕起垄、适时栽种、平衡施肥和合理密植等方面总结了遵义市新蒲新区甘薯高产示范种植技术要点,并对示范效果进行了分析。结果表明,实收产量超过目标产量,说明优良的种植品种、合理的种植密度、精细化的管理措施是甘薯高产的关键环节。
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关键词
甘薯
高产示范
种植技术
效果
贵州遵义
新蒲新区
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Keywords
sweet potato
high yield demonstration
planting technique
effect
Zunyi Guizhou
Xinpu new District
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分类号
S531
[农业科学—作物学]
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题名应用新技术提高文23气田开发水平
被引量：1
- 2
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作者
姜贻伟
宋国富
王玮
马小原
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机构
中原油田分公司勘探开发科学研究院
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出处
《断块油气田》
CAS
2002年第1期49-51,共3页
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文摘
文 2 3气田是我国东部地区迄今投入开发的最大砂岩气田 ,其年产量占中原油田气层气产量的 60 %左右。但文 2 3气田面临构造复杂、储层低孔低渗 ,具有边底水等问题。为此 ,从气田开发准备到目前开发稳产全过程 ,围绕地质基础研究、气藏工程研究、气层保护、动态监测、储层改造等方面 ,广泛应用国内外新技术和新方法加强对气田的综合研究 ,及时调整开发部署 ,使气田在已稳产 1 0a的基础上可再稳产 6a 。
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关键词
文23气田开发
调整部署
砂岩气田
储层低孔低渗
气层保护
动态监测
储层改造
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Keywords
new technique,high effective development,Adjustment and deployment,Wen 23 gasfield.
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分类号
TE37
[石油与天然气工程—油气田开发工程]
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题名建筑电气设计的节能措施
被引量：10
- 3
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作者
黄一凡
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机构
黑龙江省林业设计研究院
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出处
《林业科技情报》
2008年第3期100-101,共2页
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文摘
阐述了建筑电气设计中节能的重要性,并对以下三方面建筑电气的节能措施进行了粗浅的说明:从提高设备自动化水平,利用智能控制技术对设备运行进行监控来节能;从供配电系统、电气照明系统采用高效、低能耗的设备,提高能源的利用效率,进一步降低能耗进行节能;开拓设计思路,注重专业配合,从采用新技术、新产品进行节能。
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关键词
建筑电气节能
智能控制技术
高效低能耗设备
供配电系统
电气照明系统
新技术
新产品
新能源
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Keywords
architecture electrical design
intelligent control technique
high - effect and low energy consumption equipment
distribution system
electric lighting system
new technique
new production
new energy resource
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分类号
TU85
[建筑科学]
TK018
[动力工程及工程热物理]
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题名横滨市实时地震防灾系统的技术特点与实用效果
被引量：1
- 4
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作者
苏幼坡
刘瑞兴
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机构
河北省地震工程研究中心
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出处
《世界地震工程》
CSCD
2001年第3期59-61,共3页
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文摘
论述了横滨市实时地震防灾系统的基本构成和主要功能，以及为提高地震灾害早期情报速发性而采用 的高新技术及该系统在地震观测中的应用效果．
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关键词
横滨市
实时地震防灾系统
地震灾害
地震观测
日本
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Keywords
Yokohama
real-time earthquake disaster prevention system
new & high technique, practical effect
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分类号
P315.9
[天文地球—地震学]
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题名表面等离子体无掩膜干涉光刻系统的数值分析(英文)
被引量：5
- 5
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作者
董启明
郭小伟
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机构
电子科技大学光电信息学院
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出处
《光子学报》
EI
CAS
CSCD
北大核心
2012年第5期558-564,共7页
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基金
The National Natural Science Foundation of China(No.60906052)
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文摘
表面等离子体激元具有近场增强效应,可以代替光子作为曝光源形成纳米级特征尺寸的图像.本文数值分析了棱镜辅助表面等离子体干涉系统的参量空间,并给出了计算原理和方法.结果表明,适当地选择高折射率棱镜、低银层厚度、入射波长和光刻胶折射率,可以获得高曝光度、高对比度的干涉图像.入射波长为431nm时,选择40nm厚的银层,曝光深度可达200nm,条纹周期为110nm.数值分析结果为实验的安排提供了理论支持.
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关键词
干涉光刻
表面等离子体激元
克莱舒曼结构
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Keywords
Interference lithography
Surface plasmon plortiton
Kretschmann structureCLCN: TN305.7 Document Code:A Article ID:1004-4213(2012)05-0558-70 IntroductionThere is a growing interest in exploring new nanolithography techniques with high efficiency,low cost and large-area fabrication to fabricate nanoscale devices for nanotechnology applications.Conventional photolithography has remained a useful microfabrication technology because of its ease of repetition and suitability for large-area fabrication[1].The diffraction limit,however,restricts the fabrication scale of photolithography[2].Potential solutions that have actually been pursued require increasingly shorter illumination wavelengths for replicating smaller structures.It is becoming more difficult and complicated to use the short optical wavelengths to reach the desired feature sizes.Other methods such as electron beam lithography[3],ion beam lithography[4],scanning probe lithography[5],nanoimprint lithography(NIL)[6],and evanescent near-field optical lithography(ENFOL)[7] have been developed in order to achieve nanometer-scale features.As we know,the former three techniques need scanning and accordingly are highly inefficient.In NIL,the leveling of the imprint template and the substrate during the printing process,which determines the uniformity of the imprint result,is a challenging issue of this method.ENFOL have the potential to produce subwavelength structures with high efficiency,but it encounters the fact that the evanescent field decays rapidly through the aperture,thus attenuating the transmission intensity at the exit plane and limiting the exposure distance to the scale of a few tens of nanometers from the mask.In recent years,the use of surface-plasmon polaritons(SPPs) instead of photons as an exposure source was rapidly developed to fabricate nanoscale structures.SPPs are characterized by its near field enhancement so that SPP-based lithography can greatly extend exposure depth and improve pattern contrast.Grating-assisted SPP interference,such as SPP resonant interference nanolithography[8] and SPP-assisted interference nanolithography[9],achieved a sub-100nm interference pattern.The techniques,however,are necessary to fabricate a metal grating with a very fine period and only suitable for small-area interference.To avoid the fabrication of the metal grating,a prism-based SPP maskless interference lithography was proposed in 2006,which promises good lithography performance.The approach offers potential to achieve sub-65nm and even sub-32nm feature sizes.However,the structure parameters are always not ideal in a real system.One wants to know how much influence the parameter variations have on the pattern resolution and what variations of the parameters are allowed to obtain an effective interference.Thus,it is necessary to explore the parameter spaces.1 SPP maskless interference lithography systemThe SPP maskless interference lithography system is shown in Fig.1.A p-polarized laser is divided into two beams by a grating splitter,and then goes into the prism-based multilayer system.Under a given condition,the metal film can exhibit collective electron oscillations known as SPPs which are charge density waves that are characterized by intense electromagnetic fields confined to the metallic surface.If the metal layer Fig.1 Schematic for SPP maskless interference lithography systemis sufficiently thin,plasma waves at both metal interfaces are coupled,resulting in symmetric and antisymmetric SPPs.When the thickness h of metal film,dielectric constant ε1,ε2,ε3 of medium above,inside,below the metal film are specified,the coupling equation is shown as followstanh(S2h)(ε1ε3S22+ε22S1S3)+(ε1ε2S2S3+ε2ε3S1S2)=0
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分类号
TN305.7
[电子电信—物理电子学]
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