This paper discusses the influence of Sb/In ratio on the transport properties and crystal quality of the 200 nm InAs_(x)Sb_(1-x)thin film.The Sb content of InAs_(x)Sb_(1-x)thin film in all samples was verified by HRXR...This paper discusses the influence of Sb/In ratio on the transport properties and crystal quality of the 200 nm InAs_(x)Sb_(1-x)thin film.The Sb content of InAs_(x)Sb_(1-x)thin film in all samples was verified by HRXRD of the symmetrical 004 reflections and asymmetrical 115 reflections.The calculation results show that the Sb component was 0.6 in the InAs_(x)Sb_(1-x)thin film grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3,which has the highest electron mobility(28560 cm^(2)/V·s)at 300 K.At the same time,the influence ofⅤ/Ⅲratio on the transport properties and crystal quality of Al_(0.2)In_(0.8)Sb/InAs_(x)Sb_(1-x)quantum well heterostructures also has been investigated.As a result,the Al_(0.2)In_(0.8)Sb/InAs_(0.4)Sb_(0.6)quantum well heterostructure with a channel thickness of 30 nm grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3 has a maximum electron mobility of 28300 cm^(2)/V·s and a minimum RMS roughness of 0.68 nm.Through optimizing the growth conditions,our samples have higher electron mobility and smoother surface morphology.展开更多
High-quality antiferromagnetic(AFM)θ-phase manganese nitride(MnN)films were successfully grown on MgO(001)substrates by plasma-assisted molecular beam epitaxy.Structural analysis confirms the high-quality MnN film ha...High-quality antiferromagnetic(AFM)θ-phase manganese nitride(MnN)films were successfully grown on MgO(001)substrates by plasma-assisted molecular beam epitaxy.Structural analysis confirms the high-quality MnN film has a tetragonal distortion with a c/a ratio of~0.98.The film exhibits exceptional stability in both aqueous and ambient conditions,which is a crucial factor for practical applications.Electrical transport reveals its metallic behavior with an upturn at low temperatures,which could be attributed to the Kondo effect originated from nitrogen vacancy-induced magnetic impurities.Room temperature exchange bias has been demonstrated in a MnN/CoFeB heterostructure,verifying the AFM ordering of MnN.Considering its high Néel temperature~650 K,superior stability,and low-cost,this work highlights the epitaxial MnN films as a promising candidate for AFM spintronic applications.展开更多
基金Supported by the Natural Science Basic Research Program of Shaanxi Province(2023-JC-QN-0758)Shaanxi University of Science and Technology Research Launch Project(2020BJ-26)Doctoral Research Initializing Fund of Hebei University of Science and Technology,China(1181476).
文摘This paper discusses the influence of Sb/In ratio on the transport properties and crystal quality of the 200 nm InAs_(x)Sb_(1-x)thin film.The Sb content of InAs_(x)Sb_(1-x)thin film in all samples was verified by HRXRD of the symmetrical 004 reflections and asymmetrical 115 reflections.The calculation results show that the Sb component was 0.6 in the InAs_(x)Sb_(1-x)thin film grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3,which has the highest electron mobility(28560 cm^(2)/V·s)at 300 K.At the same time,the influence ofⅤ/Ⅲratio on the transport properties and crystal quality of Al_(0.2)In_(0.8)Sb/InAs_(x)Sb_(1-x)quantum well heterostructures also has been investigated.As a result,the Al_(0.2)In_(0.8)Sb/InAs_(0.4)Sb_(0.6)quantum well heterostructure with a channel thickness of 30 nm grown under the conditions of Sb/In ratio of 6 and As/In ratio of 3 has a maximum electron mobility of 28300 cm^(2)/V·s and a minimum RMS roughness of 0.68 nm.Through optimizing the growth conditions,our samples have higher electron mobility and smoother surface morphology.
基金Supported by the National Natural Science Foundation of China(12027805,62171136,62174166,U2241219)the Science and Technology Commission of Shanghai Municipality(2019SHZDZX01,22JC1402902)the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB43010200)。
文摘High-quality antiferromagnetic(AFM)θ-phase manganese nitride(MnN)films were successfully grown on MgO(001)substrates by plasma-assisted molecular beam epitaxy.Structural analysis confirms the high-quality MnN film has a tetragonal distortion with a c/a ratio of~0.98.The film exhibits exceptional stability in both aqueous and ambient conditions,which is a crucial factor for practical applications.Electrical transport reveals its metallic behavior with an upturn at low temperatures,which could be attributed to the Kondo effect originated from nitrogen vacancy-induced magnetic impurities.Room temperature exchange bias has been demonstrated in a MnN/CoFeB heterostructure,verifying the AFM ordering of MnN.Considering its high Néel temperature~650 K,superior stability,and low-cost,this work highlights the epitaxial MnN films as a promising candidate for AFM spintronic applications.
