The simulation calculation and analysis of electron transmittance and ion stopping power for ion barrier films (IBFs) of Al2O3 and SiO2 are performed by Monte Carlo methods. The interaction model between particles and...The simulation calculation and analysis of electron transmittance and ion stopping power for ion barrier films (IBFs) of Al2O3 and SiO2 are performed by Monte Carlo methods. The interaction model between particles and solids are described. It is found that at the same conditions,the electron transmittance for SiO2 IBF is relatively higher than that of Al2O3 IBF,and the ion stopping power of SiO2 IBF is relatively lower than that of Al2O3 by Monte Carlo simulations. It is also indicated that SiO2 is one of the ideal materials for fabricating IBFs.展开更多
研究了用离子镀方法沉积 TiN 膜作为高温环境下耐热涂层和基体之间扩散壁障(中间阻挡层)的可行性。结果表明,有 TiN 中间层试样。其高温抗氧化性能明显提高,TiN 层在一定温度范围内有良好的稳定性和阻扩散性。阐述了以Al 为耐热涂层时,T...研究了用离子镀方法沉积 TiN 膜作为高温环境下耐热涂层和基体之间扩散壁障(中间阻挡层)的可行性。结果表明,有 TiN 中间层试样。其高温抗氧化性能明显提高,TiN 层在一定温度范围内有良好的稳定性和阻扩散性。阐述了以Al 为耐热涂层时,TiN 中间层阻挡 Al 原子扩散的机理。展开更多
文摘The simulation calculation and analysis of electron transmittance and ion stopping power for ion barrier films (IBFs) of Al2O3 and SiO2 are performed by Monte Carlo methods. The interaction model between particles and solids are described. It is found that at the same conditions,the electron transmittance for SiO2 IBF is relatively higher than that of Al2O3 IBF,and the ion stopping power of SiO2 IBF is relatively lower than that of Al2O3 by Monte Carlo simulations. It is also indicated that SiO2 is one of the ideal materials for fabricating IBFs.
