The structural evolution and optical characterization of hydrogenated silicon(Si:H) thin films obtained by conventional radio frequency(RF) plasma enhanced chemical vapor deposition(PECVD) through decomposition of sil...The structural evolution and optical characterization of hydrogenated silicon(Si:H) thin films obtained by conventional radio frequency(RF) plasma enhanced chemical vapor deposition(PECVD) through decomposition of silane diluted with argon were studied by X-ray diffractometry(XRD),Fourier transform infrared(FTIR) spectroscopy,Raman spectroscopy,transmission electron microscopy(TEM),and ultraviolet and visible(UV-vis) spectroscopy,respectively.The influence of argon dilution on the optical properties of the thin films was also studied.It is found that argon as dilution gas plays a significant role in the growth of nano-crystal grains and amorphous network in Si:H thin films.The structural evolution of the thin films with different argon dilution ratios is observed and it is suggested that argon plasma leads to the nanocrystallization in the thin films during the deposition process.The nanocrystallization initiating at a relatively low dilution ratio is also observed.With the increase of argon portion in the mixed precursor gases,nano-crystal grains in the thin films evolve regularly.The structural evolution is explained by a proposed model based on the energy exchange between the argon plasma constituted with Ar* and Ar+ radicals and the growth regions of the thin films.It is observed that both the absorption of UV-vis light and the optical gap decrease with the increase of dilution ratio.展开更多
目的研究硅(Si)、氧(O)元素掺杂对类金刚石(Diamond like Carbon,DLC)薄膜沉积、结构、表面形貌以及阻隔性能的影响,为高效制备高阻隔硅氧共掺类金刚石(Si and O Incorporated DLC,Si/O-DLC)薄膜提供新的思路参考。方法利用微波等离子...目的研究硅(Si)、氧(O)元素掺杂对类金刚石(Diamond like Carbon,DLC)薄膜沉积、结构、表面形貌以及阻隔性能的影响,为高效制备高阻隔硅氧共掺类金刚石(Si and O Incorporated DLC,Si/O-DLC)薄膜提供新的思路参考。方法利用微波等离子体化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)技术在聚对苯二甲酸乙二醇酯(Polyethylene terephthalate,PET)基底表面沉积Si/O-DLC薄膜,具体研究反应单体中六甲基二硅氧烷(Hexaethyldisiloxane,HMDSO)含量对薄膜沉积和阻隔性能的影响。通过台阶仪、傅里叶红外光谱(FTIR)、X射线光电子能谱(XPS)、原子力显微镜(AFM)表征薄膜厚度、结构和微观形貌,并通过测试氧气透过率表征复合薄膜的阻隔性能。结果随着混合气体中HMDSO含量增加,薄膜的沉积速率提高,不同高度位置上沉积速率波动变弱,平均沉积速率最高达到310 nm·min^(–1),同时,薄膜中Si、O元素含量增加,相关的键合结构含量增加,薄膜表面致密性变差,氧气阻隔性能变弱;当HMDSO流量控制在1 mL·min^(–1)时,PET薄膜的氧气透过率可从未涂覆时的132mL·m^(2)·d^(–1)降低至2mL·m^(2)·d^(-1),阻隔性能明显改善。结论在一定工艺条件下,通过微波PECVD技术在PET薄膜表面涂覆Si/O-DLC薄膜,可明显改善其阻隔性能。展开更多
基金Project(60425101) supported by the National Outstanding Young Scientists Foundation of ChinaProject(06DZ0241) supported by the Science Foundation of General Armament Department of China
文摘The structural evolution and optical characterization of hydrogenated silicon(Si:H) thin films obtained by conventional radio frequency(RF) plasma enhanced chemical vapor deposition(PECVD) through decomposition of silane diluted with argon were studied by X-ray diffractometry(XRD),Fourier transform infrared(FTIR) spectroscopy,Raman spectroscopy,transmission electron microscopy(TEM),and ultraviolet and visible(UV-vis) spectroscopy,respectively.The influence of argon dilution on the optical properties of the thin films was also studied.It is found that argon as dilution gas plays a significant role in the growth of nano-crystal grains and amorphous network in Si:H thin films.The structural evolution of the thin films with different argon dilution ratios is observed and it is suggested that argon plasma leads to the nanocrystallization in the thin films during the deposition process.The nanocrystallization initiating at a relatively low dilution ratio is also observed.With the increase of argon portion in the mixed precursor gases,nano-crystal grains in the thin films evolve regularly.The structural evolution is explained by a proposed model based on the energy exchange between the argon plasma constituted with Ar* and Ar+ radicals and the growth regions of the thin films.It is observed that both the absorption of UV-vis light and the optical gap decrease with the increase of dilution ratio.
文摘目的研究硅(Si)、氧(O)元素掺杂对类金刚石(Diamond like Carbon,DLC)薄膜沉积、结构、表面形貌以及阻隔性能的影响,为高效制备高阻隔硅氧共掺类金刚石(Si and O Incorporated DLC,Si/O-DLC)薄膜提供新的思路参考。方法利用微波等离子体化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)技术在聚对苯二甲酸乙二醇酯(Polyethylene terephthalate,PET)基底表面沉积Si/O-DLC薄膜,具体研究反应单体中六甲基二硅氧烷(Hexaethyldisiloxane,HMDSO)含量对薄膜沉积和阻隔性能的影响。通过台阶仪、傅里叶红外光谱(FTIR)、X射线光电子能谱(XPS)、原子力显微镜(AFM)表征薄膜厚度、结构和微观形貌,并通过测试氧气透过率表征复合薄膜的阻隔性能。结果随着混合气体中HMDSO含量增加,薄膜的沉积速率提高,不同高度位置上沉积速率波动变弱,平均沉积速率最高达到310 nm·min^(–1),同时,薄膜中Si、O元素含量增加,相关的键合结构含量增加,薄膜表面致密性变差,氧气阻隔性能变弱;当HMDSO流量控制在1 mL·min^(–1)时,PET薄膜的氧气透过率可从未涂覆时的132mL·m^(2)·d^(–1)降低至2mL·m^(2)·d^(-1),阻隔性能明显改善。结论在一定工艺条件下,通过微波PECVD技术在PET薄膜表面涂覆Si/O-DLC薄膜,可明显改善其阻隔性能。
