Developing efficient energy storage for sodium-ion batteries(SIBs)by creating high-performance heterojunctions and understanding their interfacial interaction at the atomic/molecular level holds promise but is also ch...Developing efficient energy storage for sodium-ion batteries(SIBs)by creating high-performance heterojunctions and understanding their interfacial interaction at the atomic/molecular level holds promise but is also challenging.Besides,sluggish reaction kinetics at low temperatures restrict the operation of SIBs in cold climates.Herein,cross-linking nanoarchitectonics of WS_(2)/Ti_(3)C_(2)T_(x) heterojunction,featuring built-in electric field(BIEF),have been developed,employing as a model to reveal the positive effect of heterojunction design and BIEF for modifying the reaction kinetics and electrochemical activity.Particularly,the theoretical analysis manifests the discrepancy in work functions leads to the electronic flow from the electron-rich Ti_(3)C_(2)T_(x) to layered WS_(2),spontaneously forming the BIEF and“ion reservoir”at the heterogeneous interface.Besides,the generation of cross-linking pathways further promotes the transportation of electrons/ions,which guarantees rapid diffusion kinetics and excellent structure coupling.Consequently,superior sodium storage performance is obtained for the WS_(2)/Ti_(3)C_(2)T_(x) heterojunction,with only 0.2%decay per cycle at 5.0 A g^(-1)(25℃)up to 1000 cycles and a high capacity of 293.5 mA h g^(-1)(0.1A g^(-1)after 100 cycles)even at-20℃.Importantly,the spontaneously formed BIEF,accompanied by“ion reservoir”,in heterojunction provides deep understandings of the correlation between structure fabricated and performance obtained.展开更多
介绍了一种电压控制型压电陶瓷驱动器的工作原理,基于OKI(OKI Electric Industry Co.)0.5μm BiCMOS(Bipolar CMOS)工艺,设计了一个用于该驱动器的高电源抑制比、低温漂的带隙电压基准源。采用自基准LDO为基准源提供伪电源电压,进一步...介绍了一种电压控制型压电陶瓷驱动器的工作原理,基于OKI(OKI Electric Industry Co.)0.5μm BiCMOS(Bipolar CMOS)工艺,设计了一个用于该驱动器的高电源抑制比、低温漂的带隙电压基准源。采用自基准LDO为基准源提供伪电源电压,进一步提高电路的电源抑制比。引入改进后的分段线性电流补偿技术对基准进行曲率校正,提高了温度补偿的灵活性和精确度。HSPICE仿真结果表明,在-40^+150℃范围内,基准电压的温度系数为2.3×10-6/℃,低频时电路电源抑制比为-174dB。展开更多
基金supported by the faculty startup funds from the Yangzhou Universitythe Natural Science Foundation of Jiangsu Province(BK20210821)+1 种基金the National Natural Science Foundation of China(22102141)the Lvyangjinfeng Talent Program of Yangzhou。
文摘Developing efficient energy storage for sodium-ion batteries(SIBs)by creating high-performance heterojunctions and understanding their interfacial interaction at the atomic/molecular level holds promise but is also challenging.Besides,sluggish reaction kinetics at low temperatures restrict the operation of SIBs in cold climates.Herein,cross-linking nanoarchitectonics of WS_(2)/Ti_(3)C_(2)T_(x) heterojunction,featuring built-in electric field(BIEF),have been developed,employing as a model to reveal the positive effect of heterojunction design and BIEF for modifying the reaction kinetics and electrochemical activity.Particularly,the theoretical analysis manifests the discrepancy in work functions leads to the electronic flow from the electron-rich Ti_(3)C_(2)T_(x) to layered WS_(2),spontaneously forming the BIEF and“ion reservoir”at the heterogeneous interface.Besides,the generation of cross-linking pathways further promotes the transportation of electrons/ions,which guarantees rapid diffusion kinetics and excellent structure coupling.Consequently,superior sodium storage performance is obtained for the WS_(2)/Ti_(3)C_(2)T_(x) heterojunction,with only 0.2%decay per cycle at 5.0 A g^(-1)(25℃)up to 1000 cycles and a high capacity of 293.5 mA h g^(-1)(0.1A g^(-1)after 100 cycles)even at-20℃.Importantly,the spontaneously formed BIEF,accompanied by“ion reservoir”,in heterojunction provides deep understandings of the correlation between structure fabricated and performance obtained.
文摘介绍了一种电压控制型压电陶瓷驱动器的工作原理,基于OKI(OKI Electric Industry Co.)0.5μm BiCMOS(Bipolar CMOS)工艺,设计了一个用于该驱动器的高电源抑制比、低温漂的带隙电压基准源。采用自基准LDO为基准源提供伪电源电压,进一步提高电路的电源抑制比。引入改进后的分段线性电流补偿技术对基准进行曲率校正,提高了温度补偿的灵活性和精确度。HSPICE仿真结果表明,在-40^+150℃范围内,基准电压的温度系数为2.3×10-6/℃,低频时电路电源抑制比为-174dB。
