It is still a great challenge at present to combine the high rate capability of the electrochemical capacitor with the high electrochemical capacity feature of rechargeable battery in energy storage and transport devi...It is still a great challenge at present to combine the high rate capability of the electrochemical capacitor with the high electrochemical capacity feature of rechargeable battery in energy storage and transport devices. By studying the lithiation mechanism of Li_4Ti_5O_12 （LTO） using in-situ electron holography, we find that double charge layers are formed at the interface of the insulating Li_4Ti_5O_12 （Li_4） phase and the semiconducting Li_7Ti_5O_12 （Li_7） phase, and can greatly boost the lithiation kinetics. The electron wave phase of the LTO particle is found to gradually shrink with the interface movement, leaving a positive electric field from Li_7 to Li_4 phase. Once the capacitive interface charges are formed, the lithiation of the core/shell particle could be established within 10 s. The ultrafast kinetics is attributed to the built-in interface potential and the mixed Ti3＋/Ti4＋ sites at the interface that could be maximally lowering the thermodynamic barrier for Li ion migration.展开更多
This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. ...This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer （EI） and increase breakdown voltage （BV）. The BV and EI of SAC LDMOS increase to 612 V and 600 V/tim from 204 V and 90.7 V/ttm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of r/which present the enhanced ability of interface charge on EI are defined and analysed.展开更多
An analytical model of the power metal–oxide–semiconductor field-effect transistor(MOSFET)with high permittivity insulator structure(HKMOS)with interface charge is established based on superposition and developed fo...An analytical model of the power metal–oxide–semiconductor field-effect transistor(MOSFET)with high permittivity insulator structure(HKMOS)with interface charge is established based on superposition and developed for optimization by charge compensation.In light of charge compensation,the disturbance aroused by interface charge is efficiently compromised by introducing extra charge for maximizing breakdown voltage(BV)and minimizing specific ON-resistance(R_(on,sp)).From this optimization method,it is very efficient to obtain the design parameters to overcome the difficulty in implementing the R_(on,sp)–BV trade-off for quick design.The analytical results prove that in the HKMOS with positive or negative interface charge at a given length of drift region,the extraction of the parameters is qualitatively and quantitatively optimized for trading off BV and Ron,sp with JFET effect taken into account.展开更多
A new SOI power device with multi-region high-concentration fixed charge（MHFC） is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer（BOX）, by which the high-concentration dynam...A new SOI power device with multi-region high-concentration fixed charge（MHFC） is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer（BOX）, by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.展开更多
We investigate the influence of interface charge on electrical performance of NbAIO/A1GaN/GaN metal-oxide- semiconductor high electron mobility transistors （MOSHEMTs）. Through C-V measurements and simulations, we fi...We investigate the influence of interface charge on electrical performance of NbAIO/A1GaN/GaN metal-oxide- semiconductor high electron mobility transistors （MOSHEMTs）. Through C-V measurements and simulations, we find that the donor-type interface fixed charge density Qit of 2.2 × 10^13 cm^-2 exists at the NbA10/A1GaN interface, which induces the shift of the threshold voltage much more negative. Furthermore, a trap density of approximately 0.43 × 10^13-1.14 ×10^13 cm^-2 eV^-1 is obtained at the NaA10/AlGaN interface, which is consistent with the frequency-dependent capacitance and conductance measurement results.展开更多
A model based on analysis of the self-consistent Poisson-Schrodinger equation is proposed to investigate the tunneling current of electrons in the inversion layer of a p-type metal-oxide-semiconductor （MOS） structur...A model based on analysis of the self-consistent Poisson-Schrodinger equation is proposed to investigate the tunneling current of electrons in the inversion layer of a p-type metal-oxide-semiconductor （MOS） structure. In this model, the influences of interface trap charge （ITC） at the Si-SiO2 interface and fixed oxide charge （FOC） in the oxide region are taken into account, and one-band effective mass approximation is used. The tunneling probability is obtained by employing the transfer matrix method. Further, the effects of in-plane momentum on the quantization in the electron motion perpendicular to the Si-SiO2 interface of a MOS device are investigated. Theoretical simulation results indicate that both ITC and FOC have great influence on the tunneling current through a MOS structure when their densities are larger than l012 cm 2, which results from the great change of bound electrons near the Si-SiO2 interface and the oxide region. Therefore, for real ultrathin MOS structures with ITC and FOC, this model can give a more accurate description for the tunneling current in the inversion layer.展开更多
The modified dipolar Poisson-Boltzmann （MDPB） equation, where the electrostatics of the dipolar interactions of solvent molecules and also the finite size effects of ions and dipolar solvent molecules are explicitly...The modified dipolar Poisson-Boltzmann （MDPB） equation, where the electrostatics of the dipolar interactions of solvent molecules and also the finite size effects of ions and dipolar solvent molecules are explicitly taken into account on a mean-field level, is studied numerically for a two-plate system with oppositely charged surfaces. The MDPB equation is solved numerically, using the nonlinear Multigrid method, for one-dimensional finite volume meshes. For a high enough surface charge density, numerical results of the MDPB equation reveal that the effective dielectric constant decreases with the increase of the surface charge density. Furthermore, increasing the salt concentration leads to the decrease of the effective dielectric constant close to the charged surfaces. This decrease of the effective dielectric constant with the surface charge density is opposite to the trend from the dipolar Poisson Boltzmann （DPB） equation. This seemingly inconsistent result is due to the fact that the mean-field approach breaks down in such highly charged systems where the counterions and dipoles are strongly attracted to the charged surfaces and form a quasi two-dimensional layer. In the weak-coupling regime with the electrostatic coupling parameter （the ratio of Bjerrum length to Gouy-Chapman length） Ξ 〈 1, where the MDPB equation works, the effective dielectric constant is independent of the distance from the charged surfaces and there is no accumulation of dipoles near the charged surfaces. Therefore, there are no physical and computational advantages for the MDPB equation over the modified Poisson-Boltzmann （MPB） equation where the effect of dipolar interactions of solvent dipoles is implicitly taken into account in the renormalised dielectric constant.展开更多
A new partial-SOI （PSOI） high voltage device structure called a CI PSOI （charge island PSOI） is proposed for the first time in this paper. The device is characterized by a charge island layer on the interface of t...A new partial-SOI （PSOI） high voltage device structure called a CI PSOI （charge island PSOI） is proposed for the first time in this paper. The device is characterized by a charge island layer on the interface of the top silicon layer and the dielectric buried layer in which a series of equidistant high concentration n＋-regions is inserted. Inversion holes resulting from the vertical electric field are located in the spacing between two neighbouring n＋-regions on the interface by the force with ionized donors in the undepleted n＋-regions, and therefore effectively enhance the electric field of the dielectric buried layer （Ei） and increase the breakdown voltage （BV）, thereby alleviating the self-heating effect （SHE） by the silicon window under the source. An analytical model of the vertical interface electric field for the CI PSOI is presented and the analytical results are in good agreement with the 2D simulation results. The BV and El of the CI PSOI LDMOS increase to 631 V and 584 V/μm from 246 V and 85.8 V/μm for the conventional PSOI with a lower SHE, respectively. The effects of the structure parameters on the device characteristics are analysed for the proposed device in detail.展开更多
A new partial SOI （silion-on-insulator） （PSOI） high voltage P-channel LDMOS （lateral double-diffused metal-oxide semiconductor） with an interface hole islands （HI） layer is proposed and its breakdown character...A new partial SOI （silion-on-insulator） （PSOI） high voltage P-channel LDMOS （lateral double-diffused metal-oxide semiconductor） with an interface hole islands （HI） layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field （Er） in the dielectric buried oxide layer （BOX） and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage （BV）. The values of E1 and BV of an HI PSOI with a 2-~m thick SOI layer over a 1-~tm thick buried layer are 580V/~m and -582 V, respectively, compared with 81.5 V/p.m and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect （SHE）. Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.展开更多
A novel partial silicon-on-insulator laterally double-diffused metal-oxide-semiconductor transistor （PSOI LDMOS） with a thin buried oxide layer is proposed in this paper. The key structure feature of the device is a...A novel partial silicon-on-insulator laterally double-diffused metal-oxide-semiconductor transistor （PSOI LDMOS） with a thin buried oxide layer is proposed in this paper. The key structure feature of the device is an n＋-layer, which is partially buried on the bottom interface of the top silicon layer （PBNL PSOI LDMOS）. The undepleted interface n＋-layer leads to plenty of positive charges accumulated on the interface, which will modulate the distributions of the lateral and vertical electric fields for the device, resulting in a high breakdown voltage （BV）. With the same thickness values of the top silicon layer （10 p.m） and buried oxide layer （0.375 μm）, the BV of the PBNL PSOI LDMOS increases to 432 V from 285 V of the conventional PSOI LDMOS, which is improved by 51.6%.展开更多
Depleted bulk heterojunction （DBH） PbS quantum dot solar cells （QDSCs）, appearing with boosted short-circuit current density （Jsc）, represent the great potential of solar radiation utilization, but suffer from t...Depleted bulk heterojunction （DBH） PbS quantum dot solar cells （QDSCs）, appearing with boosted short-circuit current density （Jsc）, represent the great potential of solar radiation utilization, but suffer from the problem of increased interfacial charge recombination and reduced open-circuit voltage （Voc）. Herein, we report that an insertion of ultrathin A1203 layer （ca. 1.2 A thickness） at the interface of ZnO nanowires （NWs） and PbS quantum dots （QDs） could remarkably improve the performance of DBH-QDSCs fabricated from them, i.e., an increase of Voc from 449 mV to 572 mV, J^c from 21.90 mA/cm2 to 23.98 mA/cm2, and power conversion efficiency （PCE） from 4.29% to 6.11%. Such an improvement of device performance is ascribed to the significant reduction of the interfacial charge recombination rate, as evidenced by the light intensity dependence on Jsc and Voc, the prolonged electron lifetime, the lowered trap density, and the enlarged recombination activation energy. The present research therefore provides an effective interfacial engineering means to improving the overall performance of DBH-QDSCs, which might also be effective to other types of optoelectronic devices with large interface area.展开更多
A novel silicon-on-insulator （SOI） high-voltage device based on epitaxy-separation by implantation oxygen （SIMOX） with a partial buried n＋-layer silicon-on-insulator （PBN SOI） is proposed in this paper. Based o...A novel silicon-on-insulator （SOI） high-voltage device based on epitaxy-separation by implantation oxygen （SIMOX） with a partial buried n＋-layer silicon-on-insulator （PBN SOI） is proposed in this paper. Based on the proposed expressions of the vertical interface electric field, the high concentration interface charges which are accumu- lated on the interface between top silicon layer and buried oxide layer （BOX） effectively enhance the electric field of the BOX （EI）, resulting in a high breakdown voltage （BV） for the device. For the same thicknesses of top silicon layer （10 μm） and BOX （0.375 μm）, the EI and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI, respectively.展开更多
A new high-voltage and low-specific on-resistance （Ron,sp） adaptive buried electrode （ABE） silicon-on-insulator （SOI） power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET...A new high-voltage and low-specific on-resistance （Ron,sp） adaptive buried electrode （ABE） silicon-on-insulator （SOI） power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide （BOX） layer, the negative drain voltage Vd is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than tile electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field EI and the breakdown voltage （BV） of ABE SOI are 545 V/μm and -587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low Ron,sp is obtained. Furthermore, the structure also alleviates the self-heating effect （SHE）. The analytical model matches the simulation results.展开更多
基金supported by the National Natural Science Foundation of China (Nos. 51501085, 11704019, 51522212 and 51421002)National Program on Key Basic Research Project (2014CB921002)the Strategic Priority Research Program of Chinese Academy of Sciences (No. XDB07030200)
文摘It is still a great challenge at present to combine the high rate capability of the electrochemical capacitor with the high electrochemical capacity feature of rechargeable battery in energy storage and transport devices. By studying the lithiation mechanism of Li_4Ti_5O_12 （LTO） using in-situ electron holography, we find that double charge layers are formed at the interface of the insulating Li_4Ti_5O_12 （Li_4） phase and the semiconducting Li_7Ti_5O_12 （Li_7） phase, and can greatly boost the lithiation kinetics. The electron wave phase of the LTO particle is found to gradually shrink with the interface movement, leaving a positive electric field from Li_7 to Li_4 phase. Once the capacitive interface charges are formed, the lithiation of the core/shell particle could be established within 10 s. The ultrafast kinetics is attributed to the built-in interface potential and the mixed Ti3＋/Ti4＋ sites at the interface that could be maximally lowering the thermodynamic barrier for Li ion migration.
基金Projects supported by the National Natural Science Foundation of China （Grant Nos. 60806025 and 60976060）, the National Laboratory of Analog Integrated Circuit （Grant No. 9140C0903070904）, and the Youth Teacher Foundation of the University of Electroniq Science and Technology of China （Grant No. ix0721）.
文摘This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer （EI） and increase breakdown voltage （BV）. The BV and EI of SAC LDMOS increase to 612 V and 600 V/tim from 204 V and 90.7 V/ttm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of r/which present the enhanced ability of interface charge on EI are defined and analysed.
基金supported by the National Natural Science Foundation of China(Grant No.61404110)the National Higher-education Institution General Research and Development Project(Grant No.2682014CX097)。
文摘An analytical model of the power metal–oxide–semiconductor field-effect transistor(MOSFET)with high permittivity insulator structure(HKMOS)with interface charge is established based on superposition and developed for optimization by charge compensation.In light of charge compensation,the disturbance aroused by interface charge is efficiently compromised by introducing extra charge for maximizing breakdown voltage(BV)and minimizing specific ON-resistance(R_(on,sp)).From this optimization method,it is very efficient to obtain the design parameters to overcome the difficulty in implementing the R_(on,sp)–BV trade-off for quick design.The analytical results prove that in the HKMOS with positive or negative interface charge at a given length of drift region,the extraction of the parameters is qualitatively and quantitatively optimized for trading off BV and Ron,sp with JFET effect taken into account.
基金supported by the State Key Laboratory of Electronic Thin Films and Integrated Devices of China(Grant No.KFJJ201205)the Department of Education Project of Guangxi Province,China(Grant No.201202ZD041)+1 种基金the Postdoctoral Science Foundation Project of China(Grant Nos.2012M521127 and2013T60566)the National Natural Science Foundation of China(Grant Nos.61361011,61274077,and 61464003)
文摘A new SOI power device with multi-region high-concentration fixed charge（MHFC） is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer（BOX）, by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.
基金Supported by the Basic Science Research Fund for the Central Universities of China under Grant No JB141104
文摘We investigate the influence of interface charge on electrical performance of NbAIO/A1GaN/GaN metal-oxide- semiconductor high electron mobility transistors （MOSHEMTs）. Through C-V measurements and simulations, we find that the donor-type interface fixed charge density Qit of 2.2 × 10^13 cm^-2 exists at the NbA10/A1GaN interface, which induces the shift of the threshold voltage much more negative. Furthermore, a trap density of approximately 0.43 × 10^13-1.14 ×10^13 cm^-2 eV^-1 is obtained at the NaA10/AlGaN interface, which is consistent with the frequency-dependent capacitance and conductance measurement results.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61076055)the Program for Innovative Research Team of Zhejiang Normal University of China (Grant No. 2007XCXTD-5)the Open Program of Surface Physics Laboratory of Fudan University, China (Grant No. FDSKL2011-04)
文摘A model based on analysis of the self-consistent Poisson-Schrodinger equation is proposed to investigate the tunneling current of electrons in the inversion layer of a p-type metal-oxide-semiconductor （MOS） structure. In this model, the influences of interface trap charge （ITC） at the Si-SiO2 interface and fixed oxide charge （FOC） in the oxide region are taken into account, and one-band effective mass approximation is used. The tunneling probability is obtained by employing the transfer matrix method. Further, the effects of in-plane momentum on the quantization in the electron motion perpendicular to the Si-SiO2 interface of a MOS device are investigated. Theoretical simulation results indicate that both ITC and FOC have great influence on the tunneling current through a MOS structure when their densities are larger than l012 cm 2, which results from the great change of bound electrons near the Si-SiO2 interface and the oxide region. Therefore, for real ultrathin MOS structures with ITC and FOC, this model can give a more accurate description for the tunneling current in the inversion layer.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 20954001 and 10774079)the Natural Science Foundation of Zhejiang Province of China (Grant No. Y7080401)+1 种基金the Natural Science Foundation of Ningbo City (Grant No. 2009A610056)the Startup Fund and K.C. Wong Magna Fund in Ningbo University
文摘The modified dipolar Poisson-Boltzmann （MDPB） equation, where the electrostatics of the dipolar interactions of solvent molecules and also the finite size effects of ions and dipolar solvent molecules are explicitly taken into account on a mean-field level, is studied numerically for a two-plate system with oppositely charged surfaces. The MDPB equation is solved numerically, using the nonlinear Multigrid method, for one-dimensional finite volume meshes. For a high enough surface charge density, numerical results of the MDPB equation reveal that the effective dielectric constant decreases with the increase of the surface charge density. Furthermore, increasing the salt concentration leads to the decrease of the effective dielectric constant close to the charged surfaces. This decrease of the effective dielectric constant with the surface charge density is opposite to the trend from the dipolar Poisson Boltzmann （DPB） equation. This seemingly inconsistent result is due to the fact that the mean-field approach breaks down in such highly charged systems where the counterions and dipoles are strongly attracted to the charged surfaces and form a quasi two-dimensional layer. In the weak-coupling regime with the electrostatic coupling parameter （the ratio of Bjerrum length to Gouy-Chapman length） Ξ 〈 1, where the MDPB equation works, the effective dielectric constant is independent of the distance from the charged surfaces and there is no accumulation of dipoles near the charged surfaces. Therefore, there are no physical and computational advantages for the MDPB equation over the modified Poisson-Boltzmann （MPB） equation where the effect of dipolar interactions of solvent dipoles is implicitly taken into account in the renormalised dielectric constant.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60436030 and 60806025)
文摘A new partial-SOI （PSOI） high voltage device structure called a CI PSOI （charge island PSOI） is proposed for the first time in this paper. The device is characterized by a charge island layer on the interface of the top silicon layer and the dielectric buried layer in which a series of equidistant high concentration n＋-regions is inserted. Inversion holes resulting from the vertical electric field are located in the spacing between two neighbouring n＋-regions on the interface by the force with ionized donors in the undepleted n＋-regions, and therefore effectively enhance the electric field of the dielectric buried layer （Ei） and increase the breakdown voltage （BV）, thereby alleviating the self-heating effect （SHE） by the silicon window under the source. An analytical model of the vertical interface electric field for the CI PSOI is presented and the analytical results are in good agreement with the 2D simulation results. The BV and El of the CI PSOI LDMOS increase to 631 V and 584 V/μm from 246 V and 85.8 V/μm for the conventional PSOI with a lower SHE, respectively. The effects of the structure parameters on the device characteristics are analysed for the proposed device in detail.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060)the Funds of the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904)the Youth Teacher Foundation of the University of Electronic Science and Technology of China (Grant No. jx0721)
文摘A new partial SOI （silion-on-insulator） （PSOI） high voltage P-channel LDMOS （lateral double-diffused metal-oxide semiconductor） with an interface hole islands （HI） layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field （Er） in the dielectric buried oxide layer （BOX） and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage （BV）. The values of E1 and BV of an HI PSOI with a 2-~m thick SOI layer over a 1-~tm thick buried layer are 580V/~m and -582 V, respectively, compared with 81.5 V/p.m and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect （SHE）. Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.
基金supported by the Natural Science Foundation of Chongqing Science and Technology Commission(CQ CSTC)(Grant No.cstcjjA40008)the Fundamental Research Funds for the Central Universities,China(Grant No.CDJZR12160003)+1 种基金the China Postdoctoral Science Foundation(Grant Nos.2012M511906 and 2013T60835)Chongqing University Postgraduates’Science and Innovation Fund,China(Grant No.CDJXS12161105)
文摘A novel partial silicon-on-insulator laterally double-diffused metal-oxide-semiconductor transistor （PSOI LDMOS） with a thin buried oxide layer is proposed in this paper. The key structure feature of the device is an n＋-layer, which is partially buried on the bottom interface of the top silicon layer （PBNL PSOI LDMOS）. The undepleted interface n＋-layer leads to plenty of positive charges accumulated on the interface, which will modulate the distributions of the lateral and vertical electric fields for the device, resulting in a high breakdown voltage （BV）. With the same thickness values of the top silicon layer （10 p.m） and buried oxide layer （0.375 μm）, the BV of the PBNL PSOI LDMOS increases to 432 V from 285 V of the conventional PSOI LDMOS, which is improved by 51.6%.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.91233204,51372036,and 51602047)the Key Project of Chinese Ministry of Education(Grant No.113020A)the 111 Project,China(Grant No.B13013)
文摘Depleted bulk heterojunction （DBH） PbS quantum dot solar cells （QDSCs）, appearing with boosted short-circuit current density （Jsc）, represent the great potential of solar radiation utilization, but suffer from the problem of increased interfacial charge recombination and reduced open-circuit voltage （Voc）. Herein, we report that an insertion of ultrathin A1203 layer （ca. 1.2 A thickness） at the interface of ZnO nanowires （NWs） and PbS quantum dots （QDs） could remarkably improve the performance of DBH-QDSCs fabricated from them, i.e., an increase of Voc from 449 mV to 572 mV, J^c from 21.90 mA/cm2 to 23.98 mA/cm2, and power conversion efficiency （PCE） from 4.29% to 6.11%. Such an improvement of device performance is ascribed to the significant reduction of the interfacial charge recombination rate, as evidenced by the light intensity dependence on Jsc and Voc, the prolonged electron lifetime, the lowered trap density, and the enlarged recombination activation energy. The present research therefore provides an effective interfacial engineering means to improving the overall performance of DBH-QDSCs, which might also be effective to other types of optoelectronic devices with large interface area.
基金supported by the Natural Science Foundation of Chongqing Science and Technology Commission (CQ CSTC) of China (Grant No.cstcjjA40008)
文摘A novel silicon-on-insulator （SOI） high-voltage device based on epitaxy-separation by implantation oxygen （SIMOX） with a partial buried n＋-layer silicon-on-insulator （PBN SOI） is proposed in this paper. Based on the proposed expressions of the vertical interface electric field, the high concentration interface charges which are accumu- lated on the interface between top silicon layer and buried oxide layer （BOX） effectively enhance the electric field of the BOX （EI）, resulting in a high breakdown voltage （BV） for the device. For the same thicknesses of top silicon layer （10 μm） and BOX （0.375 μm）, the EI and BV of PBN SOI are improved by 186.5% and 45.4% in comparison with those of the conventional SOI, respectively.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60906038)the Science Technology Foundation for Young Scientist of University of Electronic Science and Technology of China (Grant No. L08010301JX0830)
文摘A new high-voltage and low-specific on-resistance （Ron,sp） adaptive buried electrode （ABE） silicon-on-insulator （SOI） power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide （BOX） layer, the negative drain voltage Vd is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than tile electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field EI and the breakdown voltage （BV） of ABE SOI are 545 V/μm and -587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low Ron,sp is obtained. Furthermore, the structure also alleviates the self-heating effect （SHE）. The analytical model matches the simulation results.
