The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non...The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.展开更多
The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the v...The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.展开更多
This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ...This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $／sim 5.65／times 10^{ - 5}$$／Omega ／cdot$cm$^{2}$ and show the transmittance of $／sim $98% at a wavelength of 440nm when annealed at 500／du. Blue light emitting diodes （LEDs） fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21V at an injection current of 20mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20mA in comparison with that of LEDs with conventional Ni/Au contacts展开更多
The properties of poly（3-hexylthiophene）：（6,6）-phenyl C61 butyric acid methyl ester （P3HT：PCBM） organic pho- tovoltaic devices （OPVs） with an indium tin oxide （ITO） anode treated by a KMnO4 solution are in...The properties of poly（3-hexylthiophene）：（6,6）-phenyl C61 butyric acid methyl ester （P3HT：PCBM） organic pho- tovoltaic devices （OPVs） with an indium tin oxide （ITO） anode treated by a KMnO4 solution are investigated. The optimized KMnO4 solution has a concentration of 50 rag/L, and ITO is treated for 15 min. The modification of ITO anode results in an enhancement of the power conversion efficiency （PCE） of the device, which is responsible for the increase of the photocurrent. The performance enhancement is attributed to the work function modification of the ITO substrate through the strong oxygenation of KMnO4, and then the charge collection efficiency is improved.展开更多
Indium tin oxide （ITO） transparent conducting film was treated with oxygen plasma immersion ion implantation （PIII）. X-ray photoelectron spectroscopy （XPS） was employed to characterize the effect. The results su...Indium tin oxide （ITO） transparent conducting film was treated with oxygen plasma immersion ion implantation （PIII）. X-ray photoelectron spectroscopy （XPS） was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.展开更多
铟锡复合氧化物(ITO,Indium and Tin Oxide)膜是铟的主要应用领域。在其制备工艺中,产出大量的ITO废靶需回收处理。研究了硫化沉淀法分离ITO废靶硫酸浸出液中铟、锡的工艺。平衡计算证明了硫化沉淀分离铟、锡的可行性。试验研究了温度...铟锡复合氧化物(ITO,Indium and Tin Oxide)膜是铟的主要应用领域。在其制备工艺中,产出大量的ITO废靶需回收处理。研究了硫化沉淀法分离ITO废靶硫酸浸出液中铟、锡的工艺。平衡计算证明了硫化沉淀分离铟、锡的可行性。试验研究了温度、酸度及反应时间对分离过程的影响,正交试验得出最佳工艺条件:温度323 K,反应时间20 min,溶液起始酸度100 g H2SO4/L。在此条件下,除锡率可达100%,铟在渣中的损失率仅为0.47%。展开更多
采用直流磁控溅射方法在室温下玻璃基板上制备ITO（Indium tin oxide）薄膜，并在真空中不同温度（100℃-400℃）下退火处理。研究了退火对薄膜表面形貌、电光特性的影响。XRD测试发现薄膜在200℃退火后结晶，优选晶向为（222）。随退...采用直流磁控溅射方法在室温下玻璃基板上制备ITO（Indium tin oxide）薄膜，并在真空中不同温度（100℃-400℃）下退火处理。研究了退火对薄膜表面形貌、电光特性的影响。XRD测试发现薄膜在200℃退火后结晶，优选晶向为（222）。随退火温度升高，方块电阻迅速下降，表面更加平整，薄膜在可见光范围平均透过率提高到85％。展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61534008,61376081,and 61404157)the Application Foundation of Suzhou,China(Grant No.SYG201437)
文摘The application of transparent conducting indium-tin-oxide （ITO） film as full front electrode replacing the conven- tional bus-bar metal electrode in III-V compound GalnP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm N＋-GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped N＋-GaAs layer, up to 2×10^19 cm^-3. A good device performance of the GalnP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III-V solar cell.
基金supported by the National Natural Science Foundation of China(Grant Nos.61222501 and 61335004)
文摘The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.
基金Project supported by Science and Technology Planning Project of Guangdong Province (Grant No. 2007A010501008)the Production and Research Project of Guangdong Province and the Ministry of Education (Grant No. 2009B090300338)
文摘This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide （Ta-doped ITO） films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $／sim 5.65／times 10^{ - 5}$$／Omega ／cdot$cm$^{2}$ and show the transmittance of $／sim $98% at a wavelength of 440nm when annealed at 500／du. Blue light emitting diodes （LEDs） fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21V at an injection current of 20mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20mA in comparison with that of LEDs with conventional Ni/Au contacts
基金Project supported by the National Natural Science Foundation of China(Grant Nos.10974013 and 60978060)the Research Fund for the Doctoral Program of Higher Education,China(Grant No.20090009110027)+3 种基金the Beijing Municipal Natural Science Foundation,China(Grant No.1102028)the New Century Excellent Talents in University,China(Grant No.NCET-10-0220)the Fundamental Research Funds for the Central Universities,China(Grant No.2012JBZ001)the Technology Innovation Fund for Outstanding Ph.D.Students of Beijing Jiaotong University,China(Grant No.48034)
文摘The properties of poly（3-hexylthiophene）：（6,6）-phenyl C61 butyric acid methyl ester （P3HT：PCBM） organic pho- tovoltaic devices （OPVs） with an indium tin oxide （ITO） anode treated by a KMnO4 solution are investigated. The optimized KMnO4 solution has a concentration of 50 rag/L, and ITO is treated for 15 min. The modification of ITO anode results in an enhancement of the power conversion efficiency （PCE） of the device, which is responsible for the increase of the photocurrent. The performance enhancement is attributed to the work function modification of the ITO substrate through the strong oxygenation of KMnO4, and then the charge collection efficiency is improved.
基金supported by National Natural Science Foundation of China(Nos.11005021,51177017 and 11175049)
文摘Indium tin oxide （ITO） transparent conducting film was treated with oxygen plasma immersion ion implantation （PIII）. X-ray photoelectron spectroscopy （XPS） was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.
文摘铟锡复合氧化物(ITO,Indium and Tin Oxide)膜是铟的主要应用领域。在其制备工艺中,产出大量的ITO废靶需回收处理。研究了硫化沉淀法分离ITO废靶硫酸浸出液中铟、锡的工艺。平衡计算证明了硫化沉淀分离铟、锡的可行性。试验研究了温度、酸度及反应时间对分离过程的影响,正交试验得出最佳工艺条件:温度323 K,反应时间20 min,溶液起始酸度100 g H2SO4/L。在此条件下,除锡率可达100%,铟在渣中的损失率仅为0.47%。
文摘采用直流磁控溅射方法在室温下玻璃基板上制备ITO（Indium tin oxide）薄膜，并在真空中不同温度（100℃-400℃）下退火处理。研究了退火对薄膜表面形貌、电光特性的影响。XRD测试发现薄膜在200℃退火后结晶，优选晶向为（222）。随退火温度升高，方块电阻迅速下降，表面更加平整，薄膜在可见光范围平均透过率提高到85％。
基金Supported by Foundations of Pujiang Talented Person Plans(No.05PJ14037)Nanotechnology of Shanghai Municipal Science & Technology Committee(No.0552nm042)Shanghai-Applied Materials Research and Development fund(No.0519)
