Atomic-layer MoS_2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy（AFM）, x-ray diffraction（XRD）, high-resolution transition electron ...Atomic-layer MoS_2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy（AFM）, x-ray diffraction（XRD）, high-resolution transition electron microscopy（HRTEM）, photoluminescence（PL）, and x-ray photoelectron spectroscopy（XPS） characterization methods is applied to investigate the crystal structures, valence states, and compositions of the ultrathin film areas. The nucleation particles show irregular morphology, while for a larger size somewhere, the films are granular and the grains have a triangle shape. The films grow in a preferred orientation（002）. The HRTEM images present the graphene-like structure of stacked layers with low density of stacking fault, and the interlayer distance of plane is measured to be about 0.63 nm. It shows a clear quasihoneycomb-like structure and 6-fold coordination symmetry. Room-temperature PL spectra for the atomic layer MoS_2 under the condition of right and left circular light show that for both cases, the A1 and B1 direct excitonic transitions can be observed. In the meantime, valley polarization resolved PL spectra are obtained. XPS measurements provide high-purity samples aside from some contaminations from the air, and confirm the presence of pure MoS_2. The stoichiometric mole ratio of S/Mo is about 2.0–2.1, suggesting that sulfur is abundant rather than deficient in the atomic layer MoS_2 under our experimental conditions.展开更多
In HFCVD system the substrate temperature is a key factor which deeply affects the quality of diamond films. Th e magnitude and the variation of the substrate temperature must be limited in a suitable range to depo...In HFCVD system the substrate temperature is a key factor which deeply affects the quality of diamond films. Th e magnitude and the variation of the substrate temperature must be limited in a suitable range to deposit diamond films of uniform thickness over large areas. In this paper, the hot filament parameters are investigated on the basi s of GAs to realize a good substrate temperature profile. Computer simulations d emonstrate that on parameters optimized by GAs a uniform substrate temperatur e field can be formed over a relatively large circle area with R s=10 cm.展开更多
Boron doped diamond(BDD)performs well in electrochemical oxidation for organic pollutants thanks to its wide electrochemical window and superior chemical stability.We presented a method to obtain well-adherent large-s...Boron doped diamond(BDD)performs well in electrochemical oxidation for organic pollutants thanks to its wide electrochemical window and superior chemical stability.We presented a method to obtain well-adherent large-scale BDD/Nb electrode by the modified hot filament chemical vapor deposition system(HFCVD).SiC particles were sand blasted to enhance the adhesion of BDD coating.The BDD coating was then deposited on both sides of Nb which was placed vertically and closely with filament grids on both sides.The BDD/Nb electrodes had no deformation because the thermal deformations of the BDD films on both sides of the Nb substrate conteracted each other during cooling process after deposition.The surface morphology and purity of the BDD/Nb electrode were analyzed by Raman and scanning elestron microscope(SEM)techniques.Scratch test was used to investigate the adhesion of BDD films.The electrochemical performances were measured by cyclic voltammetry test.The BDD electrode at the B/C ratio of 2 000×10^(-6) held a higher oxygen evolution potential thanks to its high sp3 carbon content.Accelerated life test illustrated that the sandblasting pretreatment obviously enhanced the adhesion of BDD coating which resulted in a longer service duration than the un-sandblasted one.展开更多
首先对热丝化学气相沉积(Chem ica l vapor depos ition,CVD)系统进行改造,设计了在真空室外对室内试样进行操纵的机械手系统和储料台,实现了一次热丝碳化后完成多个不同工艺条件下试样的连续沉积。有限元仿真研究结果表明,多衬底温度...首先对热丝化学气相沉积(Chem ica l vapor depos ition,CVD)系统进行改造,设计了在真空室外对室内试样进行操纵的机械手系统和储料台,实现了一次热丝碳化后完成多个不同工艺条件下试样的连续沉积。有限元仿真研究结果表明,多衬底温度场比较均匀,适合于金刚石膜的生长。最后,采用改进沉积系统,在A r-CH4-H2气氛中,在多晶钼衬底上成功制备了纳米金刚石薄膜。R am an,XRD和AFM等结果表明,制备的金刚石纯度较高,晶粒大小在30 nm左右,表面光滑。展开更多
基金Project supported by the Natural Science Foundation of Zhejiang Province,China(Grant Nos.LY16F040003 and LY16A040007)the National Natural Science Foundation of China(Grant Nos.51401069 and 11574067)
文摘Atomic-layer MoS_2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy（AFM）, x-ray diffraction（XRD）, high-resolution transition electron microscopy（HRTEM）, photoluminescence（PL）, and x-ray photoelectron spectroscopy（XPS） characterization methods is applied to investigate the crystal structures, valence states, and compositions of the ultrathin film areas. The nucleation particles show irregular morphology, while for a larger size somewhere, the films are granular and the grains have a triangle shape. The films grow in a preferred orientation（002）. The HRTEM images present the graphene-like structure of stacked layers with low density of stacking fault, and the interlayer distance of plane is measured to be about 0.63 nm. It shows a clear quasihoneycomb-like structure and 6-fold coordination symmetry. Room-temperature PL spectra for the atomic layer MoS_2 under the condition of right and left circular light show that for both cases, the A1 and B1 direct excitonic transitions can be observed. In the meantime, valley polarization resolved PL spectra are obtained. XPS measurements provide high-purity samples aside from some contaminations from the air, and confirm the presence of pure MoS_2. The stoichiometric mole ratio of S/Mo is about 2.0–2.1, suggesting that sulfur is abundant rather than deficient in the atomic layer MoS_2 under our experimental conditions.
文摘In HFCVD system the substrate temperature is a key factor which deeply affects the quality of diamond films. Th e magnitude and the variation of the substrate temperature must be limited in a suitable range to deposit diamond films of uniform thickness over large areas. In this paper, the hot filament parameters are investigated on the basi s of GAs to realize a good substrate temperature profile. Computer simulations d emonstrate that on parameters optimized by GAs a uniform substrate temperatur e field can be formed over a relatively large circle area with R s=10 cm.
基金supported by the National Natural Science Foundation of China(Nos.51575269,51275232)the Six Talent Peaks Project in Jiangsu Province(No.ZBZZ005)the Zhejiang Provincial Key Laboratory for Cutting Tools(No.ZD201305)
文摘Boron doped diamond(BDD)performs well in electrochemical oxidation for organic pollutants thanks to its wide electrochemical window and superior chemical stability.We presented a method to obtain well-adherent large-scale BDD/Nb electrode by the modified hot filament chemical vapor deposition system(HFCVD).SiC particles were sand blasted to enhance the adhesion of BDD coating.The BDD coating was then deposited on both sides of Nb which was placed vertically and closely with filament grids on both sides.The BDD/Nb electrodes had no deformation because the thermal deformations of the BDD films on both sides of the Nb substrate conteracted each other during cooling process after deposition.The surface morphology and purity of the BDD/Nb electrode were analyzed by Raman and scanning elestron microscope(SEM)techniques.Scratch test was used to investigate the adhesion of BDD films.The electrochemical performances were measured by cyclic voltammetry test.The BDD electrode at the B/C ratio of 2 000×10^(-6) held a higher oxygen evolution potential thanks to its high sp3 carbon content.Accelerated life test illustrated that the sandblasting pretreatment obviously enhanced the adhesion of BDD coating which resulted in a longer service duration than the un-sandblasted one.
基金Supported by National Natural Science Foundation of China (No .60577040) Shanghai Foundation of Applied Ma-terials Research and Development ( No .0404) +1 种基金Nano-technology Project of Shanghai ( No .0452nm051 , No .0552nm046) Shanghai Leading Academic Disciplines (No .T0101)
文摘首先对热丝化学气相沉积(Chem ica l vapor depos ition,CVD)系统进行改造,设计了在真空室外对室内试样进行操纵的机械手系统和储料台,实现了一次热丝碳化后完成多个不同工艺条件下试样的连续沉积。有限元仿真研究结果表明,多衬底温度场比较均匀,适合于金刚石膜的生长。最后,采用改进沉积系统,在A r-CH4-H2气氛中,在多晶钼衬底上成功制备了纳米金刚石薄膜。R am an,XRD和AFM等结果表明,制备的金刚石纯度较高,晶粒大小在30 nm左右,表面光滑。
