The mechanisms occurring when the switched temperature technique is applied,as an accelerated enhanced low dose rate sensitivity(ELDRS)test technique,are investigated in terms of a specially designed gate-controlled l...The mechanisms occurring when the switched temperature technique is applied,as an accelerated enhanced low dose rate sensitivity(ELDRS)test technique,are investigated in terms of a specially designed gate-controlled lateral PNP transistor(GLPNP)that used to extract the interface traps(Nit)and oxide trapped charges(Not).Electrical characteristics in GLPNP transistors induced by ^(60)Co gamma irradiation are measured in situ as a function of total dose,showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP.Based on the analysis of the variations of Nit and Not,with switching the temperature,the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation.Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup.In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP,which provides us with a new insight into the test technique for ELDRS.展开更多
The radiation effects on several properties （reference voltage, digital output logic voltage, and supply current） of dual 8-bit analog-to-digital （A/D） converters （AD9058） under various biased conditions are inv...The radiation effects on several properties （reference voltage, digital output logic voltage, and supply current） of dual 8-bit analog-to-digital （A/D） converters （AD9058） under various biased conditions are investigated in this paper. Gamma ray and 10-MeV proton irradiation are selected for a detailed evaluation and comparison. Based on the measurement results induced by the gamma ray with various dose rates, the devices exhibit enhanced low dose rate sensitivity （ELDRS） under zero and working bias conditions. Meanwhile, it is obvious that the ELDRS is more severe under the working bias condition than under the zero bias condition. The degradation of AD9058 does not display obvious ELDRS during 10-MeV proton irradiation with the selected flux.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U1532261 and 1630141)
文摘The mechanisms occurring when the switched temperature technique is applied,as an accelerated enhanced low dose rate sensitivity(ELDRS)test technique,are investigated in terms of a specially designed gate-controlled lateral PNP transistor(GLPNP)that used to extract the interface traps(Nit)and oxide trapped charges(Not).Electrical characteristics in GLPNP transistors induced by ^(60)Co gamma irradiation are measured in situ as a function of total dose,showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP.Based on the analysis of the variations of Nit and Not,with switching the temperature,the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation.Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup.In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP,which provides us with a new insight into the test technique for ELDRS.
基金supported by the National Natural Science Foundation of China (Grant No. 11205038)the China Postdoctoral Science Foundation (Grant No. 2012M510951)
文摘The radiation effects on several properties （reference voltage, digital output logic voltage, and supply current） of dual 8-bit analog-to-digital （A/D） converters （AD9058） under various biased conditions are investigated in this paper. Gamma ray and 10-MeV proton irradiation are selected for a detailed evaluation and comparison. Based on the measurement results induced by the gamma ray with various dose rates, the devices exhibit enhanced low dose rate sensitivity （ELDRS） under zero and working bias conditions. Meanwhile, it is obvious that the ELDRS is more severe under the working bias condition than under the zero bias condition. The degradation of AD9058 does not display obvious ELDRS during 10-MeV proton irradiation with the selected flux.
