Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability...Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the3 D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1 R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1 R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation.展开更多
The nanoscale air channel device(NACD)has recently gained significant attention as a novel vacuum electronic that can be fabricated through nanofabrication technologies.Here,the research and progress of the NACD since...The nanoscale air channel device(NACD)has recently gained significant attention as a novel vacuum electronic that can be fabricated through nanofabrication technologies.Here,the research and progress of the NACD since it was reviewed,with a focus on working mechanism analysis,nanofabrication technologies,device structure optimization,electrode materials and simulation approach.Furthermore,the application fields and future development of NACD were summarized and prospected.The NACDs are expected to surpass the physical limits of traditional solid transistors due to its advantages such as smaller heat loss,high-speed,resistance to harsh environments.展开更多
The demand for building-integrated photovoltaics and portable energy systems based on flexible photovoltaic technology such as perovskite embedded with exceptional flexibility and a superior power-to-mass ratio is eno...The demand for building-integrated photovoltaics and portable energy systems based on flexible photovoltaic technology such as perovskite embedded with exceptional flexibility and a superior power-to-mass ratio is enormous.The photoactive layer,i.e.,the perovskite thin film,as a critical component of flexible perovskite solar cells(F-PSCs),still faces long-term stability issues when deformation occurs due to encountering temperature changes that also affect intrinsic rigidity.This literature investigation summarizes the main factors responsible for the rapid destruction of F-PSCs.We focus on long-term mechanical stability of F-PSCs together with the recent research protocols for improving this performance.Furthermore,we specify the progress in F-PSCs concerning precise design strategies of the functional layer to enhance the flexural endurance of perovskite films,such as internal stress engineering,grain boundary modification,self-healing strategy,and crystallization regulation.The existing challenges of oxygen-moisture stability and advanced encapsulation technologies of F-PSCs are also discussed.As concluding remarks,we propose our viewpoints on the large-scale commercial application of F-PSCs.展开更多
In this paper the endurance characteristics and trap generation are investigated to study the effects of different postdeposition anneals （PDAs） on the integrity of an Al2O3/Si3N4/SiOz/Si memory gate stack. The flat...In this paper the endurance characteristics and trap generation are investigated to study the effects of different postdeposition anneals （PDAs） on the integrity of an Al2O3/Si3N4/SiOz/Si memory gate stack. The flat-band voltage （Vfb） turnarounds are observed in both the programmed and erased states of the N2-PDA device. In contrast, this turnaround is observed only in the erased state of the O2-PDA device. The Vfb in the programmed state of the O2-PDA device keeps increasing with increasing program/erase （P/E） cycles. Through the analyses of endurance characteristics and the low voltage round-trip current transients, it is concluded that in both kinds of device there are an unknown type of pre-existing characteristic deep traps and P/E stress-induced positive oxide charges. In the O2-PDA device two extra types of trap are also found： the pre-existing border traps and the P/E stress-induced negative traps. Based on these four types of defects we can explain the endurance characteristics of two kinds of device. The switching property of pre-existing characteristic deep traps is also discussed.展开更多
With four poplar clones, namely 84-323 (Populus deltoides cv. ?4-323?, 84-324 (Populus deltoides cv. ?4-324?, 79-35 (Populus ?euramericana cv. ?9-35?, and I-69 (Populus deltoides cv. 慙ux?I-69/55) as a control, resear...With four poplar clones, namely 84-323 (Populus deltoides cv. ?4-323?, 84-324 (Populus deltoides cv. ?4-324?, 79-35 (Populus ?euramericana cv. ?9-35?, and I-69 (Populus deltoides cv. 慙ux?I-69/55) as a control, researches on cold, drought and salt resistance of the clones were conducted. Electrolyte permeability under a series of low temperatures, relative water loss rate of detached leaves with time series and survival rate and growth performance in salt soil were measured. The results showed that 84-323, 84-324 and 79-35 were resistant to cold as same as I-69 (CK) and more resistant to drought and salinity than I-69 (CK).展开更多
Crystallization annealing is a crucial process for the formation of the ferroelectric phase in HfO_(2)-based ferroelectric thin films.Here,we systematically investigate the impact of the annealing process,with tempera...Crystallization annealing is a crucial process for the formation of the ferroelectric phase in HfO_(2)-based ferroelectric thin films.Here,we systematically investigate the impact of the annealing process,with temperature varied from 350℃to 550℃,on the electricity,ferroelectricity and reliability of a Hf_(0.5)Zr_(0.5)O_(2)(HZO;7.5 nm)film capacitor.It was found that HZO film annealed at a low temperature of 400℃can effectively suppress the formation of the monoclinic phase and reduce the leakage current.HZO film annealed at 400℃also exhibits better ferroelectric properties than those annealed at 350℃and 550℃.Specifically,the 400℃-annealed HZO film shows an outstanding 2Pr value of 54.6μC·cm^(-2)at±3.0 MV·cm^(-1),which is relatively high compared with previously reported values for HZO film under the same electric field and annealing temperature.When the applied electric field increases to±5.0 MV·cm^(-1),the 2Pr value can reach a maximum of 69.6μC·cm^(-2).In addition,the HZO films annealed at 400℃and 550℃can endure up to bout 2.3×10^(8)cycles under a cycling field of 2.0 MV·cm^(-1)before the occurrence of breakdown.In the 400℃-annealed HZO film,72.1%of the initial polarization is maintained while only 44.9%is maintained in the 550℃-annealed HZO film.Our work demonstrates that HZO film with a low crystallization temperature(400℃)has quite a high ferroelectric polarization,which is of significant importance in applications in ferroelectric memory and negative capacitance transistors.展开更多
Unit 3 The Present Language Points: 1.rare:a.稀有的,罕见的,不常发生的。例如: (1)The panda is now a rare animal.熊猫现在是稀有动物。 (2)It is rare for her to go to class late.她上课很少迟到。
基金Project supported by the Opening Project of Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics of Chinese Academy of Sciences,the National High Technology Research and Development Program of China(Grant No.2014AA032901)the National Natural Science Foundation of China(Grant Nos.61574166,61334007,61306117,61322408,61221004,and 61274091)+1 种基金Beijing Training Project for the Leading Talents in S&T,China(Grant No.Z151100000315008)the CAEP Microsystem and THz Science and Technology Foundation,China(Grant No.CAEPMT201504)
文摘Three-dimensional（3D） crossbar array architecture is one of the leading candidates for future ultra-high density nonvolatile memory applications. To realize the technological potential, understanding the reliability mechanisms of the3 D RRAM array has become a field of intense research. In this work, the endurance performance of the 3D 1D1 R crossbar array under the thermal effect is investigated in terms of numerical simulation. It is revealed that the endurance performance of the 3D 1D1 R array would be seriously deteriorated under thermal effects as the feature size scales down to a relatively small value. A possible method to alleviate the thermal effects is provided and verified by numerical simulation.
基金funded by the National Key Research and Development Program(No.2022YFE0124200)the National Natural Science Foundation of China(No.U2241221)+1 种基金National Innovation Center of Radiation Applications(No.KFZC2021020501)Functional Materials and Devices Technology Innovation Team of Guizhou Province University,Qian Jiaoji(No.[2023]058).
文摘The nanoscale air channel device(NACD)has recently gained significant attention as a novel vacuum electronic that can be fabricated through nanofabrication technologies.Here,the research and progress of the NACD since it was reviewed,with a focus on working mechanism analysis,nanofabrication technologies,device structure optimization,electrode materials and simulation approach.Furthermore,the application fields and future development of NACD were summarized and prospected.The NACDs are expected to surpass the physical limits of traditional solid transistors due to its advantages such as smaller heat loss,high-speed,resistance to harsh environments.
基金supported by the National Key Research and Development Program of China(2022YFB4200052)the National Natural Science Foundation of China(No.21975088)+2 种基金the Department of Science and Technology of Hubei Province(2022EHB009)the China Postdoctoral Science Foundation(2022M711236)S.A.thanks European Research Council(MOLEMAT-726360)for support.
文摘The demand for building-integrated photovoltaics and portable energy systems based on flexible photovoltaic technology such as perovskite embedded with exceptional flexibility and a superior power-to-mass ratio is enormous.The photoactive layer,i.e.,the perovskite thin film,as a critical component of flexible perovskite solar cells(F-PSCs),still faces long-term stability issues when deformation occurs due to encountering temperature changes that also affect intrinsic rigidity.This literature investigation summarizes the main factors responsible for the rapid destruction of F-PSCs.We focus on long-term mechanical stability of F-PSCs together with the recent research protocols for improving this performance.Furthermore,we specify the progress in F-PSCs concerning precise design strategies of the functional layer to enhance the flexural endurance of perovskite films,such as internal stress engineering,grain boundary modification,self-healing strategy,and crystallization regulation.The existing challenges of oxygen-moisture stability and advanced encapsulation technologies of F-PSCs are also discussed.As concluding remarks,we propose our viewpoints on the large-scale commercial application of F-PSCs.
基金Project supported in part by the National Basic Research Program of China(Grant Nos.2010CB934200 and 2011CBA00600)the National Natural Science Foundation of China(Grant Nos.61176073 and 61176080)the Director’s Fund of the Institute of Microelectronics,Chinese Academy of Sciences
文摘In this paper the endurance characteristics and trap generation are investigated to study the effects of different postdeposition anneals （PDAs） on the integrity of an Al2O3/Si3N4/SiOz/Si memory gate stack. The flat-band voltage （Vfb） turnarounds are observed in both the programmed and erased states of the N2-PDA device. In contrast, this turnaround is observed only in the erased state of the O2-PDA device. The Vfb in the programmed state of the O2-PDA device keeps increasing with increasing program/erase （P/E） cycles. Through the analyses of endurance characteristics and the low voltage round-trip current transients, it is concluded that in both kinds of device there are an unknown type of pre-existing characteristic deep traps and P/E stress-induced positive oxide charges. In the O2-PDA device two extra types of trap are also found： the pre-existing border traps and the P/E stress-induced negative traps. Based on these four types of defects we can explain the endurance characteristics of two kinds of device. The switching property of pre-existing characteristic deep traps is also discussed.
文摘With four poplar clones, namely 84-323 (Populus deltoides cv. ?4-323?, 84-324 (Populus deltoides cv. ?4-324?, 79-35 (Populus ?euramericana cv. ?9-35?, and I-69 (Populus deltoides cv. 慙ux?I-69/55) as a control, researches on cold, drought and salt resistance of the clones were conducted. Electrolyte permeability under a series of low temperatures, relative water loss rate of detached leaves with time series and survival rate and growth performance in salt soil were measured. The results showed that 84-323, 84-324 and 79-35 were resistant to cold as same as I-69 (CK) and more resistant to drought and salinity than I-69 (CK).
基金Hainan Provincial Natural Science Foundation of China(Grant No.523QN257)Collegelevel Scientific Research Foundation of Qiongtai Normal University(Grant No.qtqn202215)+6 种基金the Innovation and Entrepreneurship Training Program for College Students(Grant No.202213811016)Science and Technology Program of Henan(Grant No.232102210182)Scientific Research Foundation of Henan Normal University(Grant No.20230196)Natural Science Foundation of Shandong Province(Grant No.ZR2023QA047)Foundation of PeiXin(Grant No.2023PX027)Science and technology smes innovation ability improvement project(Grant No.2023TSGC0154)the National Natural Science Foundation of China(Grant No.62174059)。
文摘Crystallization annealing is a crucial process for the formation of the ferroelectric phase in HfO_(2)-based ferroelectric thin films.Here,we systematically investigate the impact of the annealing process,with temperature varied from 350℃to 550℃,on the electricity,ferroelectricity and reliability of a Hf_(0.5)Zr_(0.5)O_(2)(HZO;7.5 nm)film capacitor.It was found that HZO film annealed at a low temperature of 400℃can effectively suppress the formation of the monoclinic phase and reduce the leakage current.HZO film annealed at 400℃also exhibits better ferroelectric properties than those annealed at 350℃and 550℃.Specifically,the 400℃-annealed HZO film shows an outstanding 2Pr value of 54.6μC·cm^(-2)at±3.0 MV·cm^(-1),which is relatively high compared with previously reported values for HZO film under the same electric field and annealing temperature.When the applied electric field increases to±5.0 MV·cm^(-1),the 2Pr value can reach a maximum of 69.6μC·cm^(-2).In addition,the HZO films annealed at 400℃and 550℃can endure up to bout 2.3×10^(8)cycles under a cycling field of 2.0 MV·cm^(-1)before the occurrence of breakdown.In the 400℃-annealed HZO film,72.1%of the initial polarization is maintained while only 44.9%is maintained in the 550℃-annealed HZO film.Our work demonstrates that HZO film with a low crystallization temperature(400℃)has quite a high ferroelectric polarization,which is of significant importance in applications in ferroelectric memory and negative capacitance transistors.
文摘Unit 3 The Present Language Points: 1.rare:a.稀有的,罕见的,不常发生的。例如: (1)The panda is now a rare animal.熊猫现在是稀有动物。 (2)It is rare for her to go to class late.她上课很少迟到。
