Oxygen evolution reaction(OER)as the foremost stumbling block to generate cost-effective clean fuels has received extensive attention in recent years.But,it still maintains the challenge to manipulate the geometric an...Oxygen evolution reaction(OER)as the foremost stumbling block to generate cost-effective clean fuels has received extensive attention in recent years.But,it still maintains the challenge to manipulate the geometric and electronic structure during single reaction process under the same conditions.Herein,we report a simple self-template strategy to generate honeycomb-like Ni_(2)P/N,P-C hybrids with preferred electronic architecture.Experiments coupled with theoretical results revealed that the synthesized catalyst has two characteristics:firstly,the unique honeycomb-like morphology not only enables the fully utilization of catalytic active sites but also optimizes the mass/electron transportation pathway,which favor the diffusion of electrolyte to accessible active sites.Secondly,N,P-C substrate,on the one hand,largely contributes the electronic distribution near Fermi level(E_(F))thus boosting its electrical conductivity.On the other hand,the support effect result in the upshift of d-band center and electropositivity of Ni sites,which attenuates the energy barrier for the adsorption of OH~àand the formation of*OOH.In consequence,the optimized Ni_(2)P/N,P-C catalysts feature high electrocatalytic activity towards OER(a low overpotential of 252 m V to achieve10 m A cm^(-2))and 10 h long-term stability,the outstanding performance is comparable to most of transition metal catalysts.This work gives a innovative tactics for contriving original OER electrocatalysts,inspirng deeper understanding of fabricating catalysts by combining theoretical simulation and experiment design.展开更多
The rapid consumption of fossil fuel and increased environmental damage caused by it have given a strong impetus to the growth and development of fuelefficient vehicles. Hybrid electric vehicles (HEVs) have evolved fr...The rapid consumption of fossil fuel and increased environmental damage caused by it have given a strong impetus to the growth and development of fuelefficient vehicles. Hybrid electric vehicles (HEVs) have evolved from their inchoate state and are proving to be a promising solution to the serious existential problem posed to the planet earth. Not only do HEVs provide better fuel economy and lower emissions satisfying environmental legislations, but also they dampen the effect of rising fuel prices on consumers. HEVs combine the drive powers of an internal combustion engine and an electrical machine. The main components of HEVs are energy storage system, motor, bidirectional converter and maximum power point trackers (MPPT, in case of solar-powered HEVs). The performance of HEVs greatly depends on these components and its architecture. This paper presents an extensive review on essential components used in HEVs such as their architectures with advantages and disadvantages, choice of bidirectional converter to obtain high efficiency, combining ultracapacitor with battery to extend the battery life, traction motors’ role and their suitability for a particular application. Inclusion of photovoltaic cell in HEVs is a fairly new concept and has been discussed in detail. Various MPPT techniques used for solar-driven HEVs are also discussed in this paper with their suitability.展开更多
The effect of an electric field E on a narrow quantum ring that contains two electrons and is threaded by a magnetic flux B has been investigated. Localization of the electronic distribution and suppression of the Aha...The effect of an electric field E on a narrow quantum ring that contains two electrons and is threaded by a magnetic flux B has been investigated. Localization of the electronic distribution and suppression of the AharonovBohm oscillation （ABO） are found in the two-electron ring, which are similar to those found in a one-electron ring. However, the period of ABO in a two-electron ring is reduced by half compared with that in a one-electron ring. Furthermore, during the variation of B, the persistent current of the ground state may undergo a sudden change in sign. This change is associated with a singlet-triplet transition and has no counterpart in one-electron rings. For a given E, there exists a threshold of energy. When the energy of the excited state exceeds the threshold, the localization would disappear and the ABO would recover. The value of the threshold is proportional to the magnitude of E. Once the threshold is exceeded, the persistent current is much stronger than the current of the ground state at E=0.展开更多
In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors （HEMTs） still lack solid reliability. Devices under accelerated DC stress tests （off-state, VDS = 0 state, and on-state step...In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors （HEMTs） still lack solid reliability. Devices under accelerated DC stress tests （off-state, VDS = 0 state, and on-state step-stress） are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs. All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] （Joh J and del Alamo J A 2006 IEEE IDEM Tech. Digest p. 415）. However, under the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both effects should be taken into consideration.展开更多
The electronic excitation temperature of a surface dielectric barrier discharge （DBD） at atmospheric pressure has been experimentally investigated by optical emission spectroscopic measurements combined with numeric...The electronic excitation temperature of a surface dielectric barrier discharge （DBD） at atmospheric pressure has been experimentally investigated by optical emission spectroscopic measurements combined with numerical simulation. Experiments have been carried out to deter- mine the spatial distribution of electric field by using FEM software and the electronic excitation temperature in discharge by calculating ratio of two relative intensities of atomic spectral lines. In this work, we choose seven Ar atomic emission lines at 415.86 nm [（3s^23p^5）5p →（3s^23p^5）4s] and 706.7 nm, 714.7 nm, 738.4 nm, 751.5 nm, 794.8 nm and 800.6 nm [（3s^23p^5）4p → （3s^23p^5）4s] to estimate the excitation temperature under a Boltzmann approximation. The average electron energy is evaluated in each discharge by using line ratio of 337.1 nm （N2（C^3Пu →B3Пg）） to 391.4 nm （N2^＋（B2 ∑u^＋→ ∑g^＋））. Furthermore, variations of the electronic excitation tempera- ture are presented versus dielectric thickness and dielectric materials. The discharge is stable and uniform along the axial direction, and the electronic excitation temperature at the edge of the copper electrode is the largest. The corresponding average electron energy is in the range of 1.6- 5.1 eV and the electric field is in 1.7-3.2 MV/m, when the distance from copper electrode varies from 0 cm to 6 cm. Moreover, the electronic excitation temperature with a higher permittivity leads to a higher dissipated electrical power.展开更多
Electronic structures of the artificial molecule comprising two truncated pyramidal quantum dots vertically coupled and embedded in the matrix are theoretically analysed via the finite element method. When the quantum...Electronic structures of the artificial molecule comprising two truncated pyramidal quantum dots vertically coupled and embedded in the matrix are theoretically analysed via the finite element method. When the quantum dots are completely aligned, the electron energy levels decrease with the horizontally applied electric field. However, energy levels may have the maxima at non-zero electric field if the dots are staggered by a distance of several nanometers in the same direction of the electric field. In addition to shifting the energy levels, the electric field can also manipulate the electron wavefunctions confined in the quantum dots, in company with the non-perfect alignment.展开更多
The InGaAs/InAIAs/InP high electron mobility transistor （HEM：F） structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and grow...The InGaAs/InAIAs/InP high electron mobility transistor （HEM：F） structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si ^-doping concentration （Nd） is about 5.0 x 1012 cm-2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission elec- tron microscopy. An InGaAs/InAiAs/InP HEMT device with a gate length of lOOnm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits fT = 249 GHa and fmax 〉 400 GHz.展开更多
oscale devices.In the present work,we investigate the electronic structures of germanane/antimonene vdW heterostructure in response to normal strain and an external electric field by using the first-principles calcula...oscale devices.In the present work,we investigate the electronic structures of germanane/antimonene vdW heterostructure in response to normal strain and an external electric field by using the first-principles calculations based on density functional theory(DFT).The results demonstrate that the germanane/antimonene vdW heterostructure behaves as a metal in a[1,,0.6]V/A range,while it is a direct semiconductor in a[0.5,0.2]V/A range,and it is an indirect semiconduc-tor in a[0.3,1.0]V/A range.Interestingly,the band alignment of germanane/antimonene vdW heterostructure appears astype-II feature both in a[0.5,0.1]range and in a[0.3,1]V/A range,while it shows the type-I character at 0.2 V/A.In ad-dition,we find that the germanane/antimonene vdW heterostructure is an indirect semiconductor both in an in-plane biaxial strain range of[[5%,,3%]and in an in-plane biaxial strain range of[3%,5%],while it exhibits a direct semiconductor character in an in-plane biaxial strain range of[2%,2%].Furthermore,the band alignment of the germanane/antimonene vdW heterostructure changes from type-II to type-I at an in-plane biaxial strain of 3%.The adjustable electronic structure of this germanane/antimonene vdW heterostructure will pave the way for developing the nanoscale devices.展开更多
The low-energy electronic states and energy gaps of carbon nanocones in an electric field are studied using a single-?-band tight-binding model. The analysis considers five perfect carbon nanocones with disclination a...The low-energy electronic states and energy gaps of carbon nanocones in an electric field are studied using a single-?-band tight-binding model. The analysis considers five perfect carbon nanocones with disclination angles of 60°, 120°, 180°, 240° and 300°, respectively. The numerical results reveal that the low-energy electronic states and energy gaps of a carbon nanocones are highly sensitive to its geometric shape(i.e. the disclination angle and height), and to the direction and magnitude of an electric field. The electric field causes a strong modulation of the state energies and energy gaps of the nanocones, changes their Fermi levels, and induces zero-gap transitions. The energy-gap modulation effect becomes particularly pronounced at higher strength of the applied electric field, and is strongly related to the geometric structure of the nanocone.展开更多
Based on the non-equilibrium Green＇s function formalism and first-principles calculations, we investigate the electronic transport properties of an anthracene-based molecular switch with two carbon nanotube electrode...Based on the non-equilibrium Green＇s function formalism and first-principles calculations, we investigate the electronic transport properties of an anthracene-based molecular switch with two carbon nanotube electrodes. Our results show that different terminations at the carbon nanotube end strongly affect the transport properties of the switch. In the case of H-termination the current at low biases is dominated by non-resonant tunneling. In the N-termination case the current at low biases is dominated by quasi-resonant tunneling and is increased by several orders of magnitude. The enhancement is discussed by the molecular projected self-consistent Hamiltonian level, transmission function, and local density of states.展开更多
As one of the most important tumor-associated antigens of colorectal adenocarcinoma, the carcinoembryonic antigen （CEA） threatens human health seriously ali over the globe. Fast electrical and highly sensitive detec...As one of the most important tumor-associated antigens of colorectal adenocarcinoma, the carcinoembryonic antigen （CEA） threatens human health seriously ali over the globe. Fast electrical and highly sensitive detection of the CEA with A1GaN/GaN high electron mobility transistor is demonstrated experimentally. To achieve a low detection limit, the Au-gated sensing area of the sensor is functionalized with a CEA aptamer instead of the corresponding antibody. The proposed aptasensor has successfully detected different concentrations （ranging from 50picogram/milliliter （pg/ml） to 50 nanogram/milliliter （ng/ml）） of CEA and achieved a detection limit as low as 50pg/ml at Vas = 0.5 V. The drain-source current shows a c/ear increase of 11.5μA under this bias.展开更多
Water electrolysis for hydrogen production offers a promising solution to future energy crises and environmental challenges.Although platinum is an efficient catalyst for hydrogen evolution reactions(HERs),its high co...Water electrolysis for hydrogen production offers a promising solution to future energy crises and environmental challenges.Although platinum is an efficient catalyst for hydrogen evolution reactions(HERs),its high cost and stability challenges limit its widespread use.A novel platinum-based catalyst,comprising platinum nanoparticles on nitrogen-doped porous graphite(Pt-N-porous graphite),addresses these limitations.This catalyst prevents nanoparticle aggregation,provides a high specific surface area of 1308 m^(2)g^(-1),and enhances mass transfer and active site exposure.Additionally,it exhibits superior electrical conductivity compared to commercial Pt-C,enhancing charge transfer efficiency.The Pt-N-porous graphite catalyst achieves an overpotential of 99 mV at 100 mA cm^(-2)and maintains stable performance after 10,000 cycles.Applied as a catalyst-coated membrane(CCM)in a proton exchange membrane(PEM)electrolyzer,it demonstrates excellent performance.Thus,the industrially synthesizable Pt-N-porous graphite catalyst holds great potential for large-scale energy applications.展开更多
High-energy electron precipitation in the high latitude regions enhances the ionization of the atmosphere,and subsequently increases the atmospheric conductivities and the vertical electric field of the atmosphere nea...High-energy electron precipitation in the high latitude regions enhances the ionization of the atmosphere,and subsequently increases the atmospheric conductivities and the vertical electric field of the atmosphere near the ground as well.The High-Energy Electron Flux(HEEF) data measured by the Fengyun-3 meteorological satellite are analyzed together with the data of nearsurface atmospheric vertical electric field measured at the Russian Vostok Station.Three HEEF enhancements are identified and it is shown that when the HEEF increases to a certain level,the local atmospheric vertical electric field near the ground can increase substantially than usual.The response time of the electric field to HEEF enhancement is about 3.7 to 4 days.展开更多
A step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor（HEMT）.An anomalous critical drain-to-gate voltage with a negative temperature coefficient ...A step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor（HEMT）.An anomalous critical drain-to-gate voltage with a negative temperature coefficient is observed in the stress sequence,beyond which the HEMT device starts to recover from degradation induced by early lower voltage stress.While the performance degradation featuring the drain current slump stems from electron trapping in the surface or bulk states during low-to-medium bias stress,the recovery is attributed to high field induced electron detrapping.The carrier detrapping mechanism could be helpful for lessening the trapping-related performance degradation of a GaN-based HEMT.展开更多
Local electron mean energy （LEME） has a direct effect on the rates of collisional ionization of molecules and atoms by electrons. Electron-impact ionization plays an important role and is the main process for the pr...Local electron mean energy （LEME） has a direct effect on the rates of collisional ionization of molecules and atoms by electrons. Electron-impact ionization plays an important role and is the main process for the production of charged particles in a primary streamer discharge. Detailed research on the LEME profile in a primary streamer discharge is extremely important for a comprehensive understanding of the local physical mechanism of a streamer. In this study, the LEME profile of the primary streamer discharge in oxygen-nitrogen mixtures with a pin-plate gap of 0.5 cm under an impulse voltage is investigated using a fluid model. The fluid model includes the electron mean energy density equation, as well as continuity equations for electrons and ions and Poisson＇s electric field equation. The study finds that, except in the initial stage of the primary streamer, the LEME in the primary streamer tip tends to increase as the oxygen-nitrogen mole ratio increases and the pressure decreases. When the primary streamer bridges the gap, the LEME in the primary streamer channel is smaller than the first ionization energies of oxygen and nitrogen. The LEME in the primary streamer channel then decreases as the oxygen-nitrogen mole ratio increases and the pressure increases. The LEME in the primary streamer tip is primarily dependent on the reduced electric field with mole ratios of oxygen-nitrogen given in the oxygen-nitrogen mixtures.展开更多
The understanding of electrical breakdown in atmospheric air across micrometer gaps is critically important for the insulation design of micro ＆ nano electronic devices. In this paper, planar aluminum electrodes with...The understanding of electrical breakdown in atmospheric air across micrometer gaps is critically important for the insulation design of micro ＆ nano electronic devices. In this paper, planar aluminum electrodes with gaps ranging from 2μm to 40 #m were fabricated by microelectromechanical system technology. The influence factors including gap width and surface dielectric states were experimentally investigated using the home-built test and measurement system. Results showed that for SiO2 layers the current sustained at 2-3 nA during most of the pre-breakdown period, and then rose rapidly to 10-30 nA just before breakdown due to field electron emission, followed by the breakdown. The breakdown voltage curves demonstrated three stages： （1） a constantly decreasing region （the gap width d 〈5 μm）, where the field emission effect played an important role just near breakdown, supplying enough initial electrons for the breakdown process; （2） a plateau region with a near constant breakdown potential （5 μm〈 d 〈10 μm）; （3） a region for large gaps that adhered to Paschen＇s curve （d 〉10μm）. And the surface dielectric states including the surface resistivity and secondary electron yield were verified to be related to the propagation of discharge due to the interaction between initial electrons and dielectrics.展开更多
α-MoO_3 ordered nanosheets have been synthesized under hydrothermal conditions using commercial MoO_3 and hydroquinone as structuring agent. X-ray diffraction(XRD), scanning electron microscope(SEM) and transmission ...α-MoO_3 ordered nanosheets have been synthesized under hydrothermal conditions using commercial MoO_3 and hydroquinone as structuring agent. X-ray diffraction(XRD), scanning electron microscope(SEM) and transmission electron microscopy(TEM) were used to analyse the obtained material. The conductivity mechanism of the Molybdenum ordered nanosheets has been investigated using combined complex impedance and modulus formalism.The temperature dependence of the conductivity, which was between 473 and 573 K, is very close to the Arrhenius' law, with an activation energy of 0.76 eV. However, the conductivity of the material increases with temperature. It shows a typical negative temperature coefficient resistance(NTCR) similar to that of a semiconductor. The dielectric properties of the MoO_3 compound have been studied in the temperature range of 473-573 K as well as the frequency range of 10 Hz to 13 MHz. The ac-conductivity for high frequency σac(ω)obeys the universal power law.展开更多
In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field p...In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.展开更多
In electron beam technology, one of the critical focuses of research and development efforts is on improving the measurement of electron beam parameters. The parameters are closely related to the generation, emission,...In electron beam technology, one of the critical focuses of research and development efforts is on improving the measurement of electron beam parameters. The parameters are closely related to the generation, emission, operation environment, and role of the electron beam and the corresponding medium. In this study, a field calculation method is proposed, and the electric field intensity distribution on the electron beam’s cross-section is analyzed. The characteristics of beam diffusion caused by the space charge effect are investigated in simulation, and the obtained data are compared with the experiment. The simulation demonstrated that the cross-sectional electric field distribution is primarily affected by the electron beam current, current density distribution, and electron beam propagation speed.展开更多
We have successfully prepared GaN based high electron mobility transistors(HEMTs)on metallic substrates transferred from silicon substrates by electroplating technique.GaN HEMTs on Cu substrates are demonstrated to ba...We have successfully prepared GaN based high electron mobility transistors(HEMTs)on metallic substrates transferred from silicon substrates by electroplating technique.GaN HEMTs on Cu substrates are demonstrated to basically have the same good electric characteristics as the chips on Si substrates.Furthermore,the better heat dissipation of HEMTs on Cu substrates compared to HEMTs on Si substrates is clearly observed by thermoreflectance imaging,showing the promising potential for very high-power and high-temperature operation.This work shows the outstanding ability of HEMT chips on Cu substrates for solving the self-heating effect with the advantages of process simplicity,high yield,and low production requirement.展开更多
基金supported by the Major Science and Technology Program for Water Pollution Control and Treatment(2017ZX07402001)the Ministry of Science and Technology of China for their financial support and the associated project is the Key Program for International S&T Cooperation Projects(No.2018YFE0124600)。
文摘Oxygen evolution reaction(OER)as the foremost stumbling block to generate cost-effective clean fuels has received extensive attention in recent years.But,it still maintains the challenge to manipulate the geometric and electronic structure during single reaction process under the same conditions.Herein,we report a simple self-template strategy to generate honeycomb-like Ni_(2)P/N,P-C hybrids with preferred electronic architecture.Experiments coupled with theoretical results revealed that the synthesized catalyst has two characteristics:firstly,the unique honeycomb-like morphology not only enables the fully utilization of catalytic active sites but also optimizes the mass/electron transportation pathway,which favor the diffusion of electrolyte to accessible active sites.Secondly,N,P-C substrate,on the one hand,largely contributes the electronic distribution near Fermi level(E_(F))thus boosting its electrical conductivity.On the other hand,the support effect result in the upshift of d-band center and electropositivity of Ni sites,which attenuates the energy barrier for the adsorption of OH~àand the formation of*OOH.In consequence,the optimized Ni_(2)P/N,P-C catalysts feature high electrocatalytic activity towards OER(a low overpotential of 252 m V to achieve10 m A cm^(-2))and 10 h long-term stability,the outstanding performance is comparable to most of transition metal catalysts.This work gives a innovative tactics for contriving original OER electrocatalysts,inspirng deeper understanding of fabricating catalysts by combining theoretical simulation and experiment design.
文摘The rapid consumption of fossil fuel and increased environmental damage caused by it have given a strong impetus to the growth and development of fuelefficient vehicles. Hybrid electric vehicles (HEVs) have evolved from their inchoate state and are proving to be a promising solution to the serious existential problem posed to the planet earth. Not only do HEVs provide better fuel economy and lower emissions satisfying environmental legislations, but also they dampen the effect of rising fuel prices on consumers. HEVs combine the drive powers of an internal combustion engine and an electrical machine. The main components of HEVs are energy storage system, motor, bidirectional converter and maximum power point trackers (MPPT, in case of solar-powered HEVs). The performance of HEVs greatly depends on these components and its architecture. This paper presents an extensive review on essential components used in HEVs such as their architectures with advantages and disadvantages, choice of bidirectional converter to obtain high efficiency, combining ultracapacitor with battery to extend the battery life, traction motors’ role and their suitability for a particular application. Inclusion of photovoltaic cell in HEVs is a fairly new concept and has been discussed in detail. Various MPPT techniques used for solar-driven HEVs are also discussed in this paper with their suitability.
基金Project supported by the National Natural Science Foundation of China （Grant No 10574163）, the Center of Theoretical Nuclear Physics, National Laboratory of Heavy Ion Collisions, Lanzhou, China.
文摘The effect of an electric field E on a narrow quantum ring that contains two electrons and is threaded by a magnetic flux B has been investigated. Localization of the electronic distribution and suppression of the AharonovBohm oscillation （ABO） are found in the two-electron ring, which are similar to those found in a one-electron ring. However, the period of ABO in a two-electron ring is reduced by half compared with that in a one-electron ring. Furthermore, during the variation of B, the persistent current of the ground state may undergo a sudden change in sign. This change is associated with a singlet-triplet transition and has no counterpart in one-electron rings. For a given E, there exists a threshold of energy. When the energy of the excited state exceeds the threshold, the localization would disappear and the ABO would recover. The value of the threshold is proportional to the magnitude of E. Once the threshold is exceeded, the persistent current is much stronger than the current of the ground state at E=0.
基金Project supported by the National Basic Research Program of China (Grant No. 2011CBA00600)the National Natural Science Foundation of China (Grant No. 61106106)the Fundamental Research Funds for the Central Universities (Grant No. K50510250006)
文摘In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors （HEMTs） still lack solid reliability. Devices under accelerated DC stress tests （off-state, VDS = 0 state, and on-state step-stress） are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs. All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] （Joh J and del Alamo J A 2006 IEEE IDEM Tech. Digest p. 415）. However, under the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both effects should be taken into consideration.
文摘The electronic excitation temperature of a surface dielectric barrier discharge （DBD） at atmospheric pressure has been experimentally investigated by optical emission spectroscopic measurements combined with numerical simulation. Experiments have been carried out to deter- mine the spatial distribution of electric field by using FEM software and the electronic excitation temperature in discharge by calculating ratio of two relative intensities of atomic spectral lines. In this work, we choose seven Ar atomic emission lines at 415.86 nm [（3s^23p^5）5p →（3s^23p^5）4s] and 706.7 nm, 714.7 nm, 738.4 nm, 751.5 nm, 794.8 nm and 800.6 nm [（3s^23p^5）4p → （3s^23p^5）4s] to estimate the excitation temperature under a Boltzmann approximation. The average electron energy is evaluated in each discharge by using line ratio of 337.1 nm （N2（C^3Пu →B3Пg）） to 391.4 nm （N2^＋（B2 ∑u^＋→ ∑g^＋））. Furthermore, variations of the electronic excitation tempera- ture are presented versus dielectric thickness and dielectric materials. The discharge is stable and uniform along the axial direction, and the electronic excitation temperature at the edge of the copper electrode is the largest. The corresponding average electron energy is in the range of 1.6- 5.1 eV and the electric field is in 1.7-3.2 MV/m, when the distance from copper electrode varies from 0 cm to 6 cm. Moreover, the electronic excitation temperature with a higher permittivity leads to a higher dissipated electrical power.
基金supported by the National High Technology Research and Development Program of China (Grant No. 2009AA03Z405)the National Natural Science Foundation of China (Grant Nos. 60908028 and 60971068)the Fundamental Research Funds for the Central Universities (Grant No. BUPT2009RC0411)
文摘Electronic structures of the artificial molecule comprising two truncated pyramidal quantum dots vertically coupled and embedded in the matrix are theoretically analysed via the finite element method. When the quantum dots are completely aligned, the electron energy levels decrease with the horizontally applied electric field. However, energy levels may have the maxima at non-zero electric field if the dots are staggered by a distance of several nanometers in the same direction of the electric field. In addition to shifting the energy levels, the electric field can also manipulate the electron wavefunctions confined in the quantum dots, in company with the non-perfect alignment.
基金Supported by the National Natural Science Foundation of China under Grant No 61434006
文摘The InGaAs/InAIAs/InP high electron mobility transistor （HEM：F） structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si ^-doping concentration （Nd） is about 5.0 x 1012 cm-2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission elec- tron microscopy. An InGaAs/InAiAs/InP HEMT device with a gate length of lOOnm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits fT = 249 GHa and fmax 〉 400 GHz.
基金Project supported by the National Natural Science Foundation of China(Grant No.11864011).
文摘oscale devices.In the present work,we investigate the electronic structures of germanane/antimonene vdW heterostructure in response to normal strain and an external electric field by using the first-principles calculations based on density functional theory(DFT).The results demonstrate that the germanane/antimonene vdW heterostructure behaves as a metal in a[1,,0.6]V/A range,while it is a direct semiconductor in a[0.5,0.2]V/A range,and it is an indirect semiconduc-tor in a[0.3,1.0]V/A range.Interestingly,the band alignment of germanane/antimonene vdW heterostructure appears astype-II feature both in a[0.5,0.1]range and in a[0.3,1]V/A range,while it shows the type-I character at 0.2 V/A.In ad-dition,we find that the germanane/antimonene vdW heterostructure is an indirect semiconductor both in an in-plane biaxial strain range of[[5%,,3%]and in an in-plane biaxial strain range of[3%,5%],while it exhibits a direct semiconductor character in an in-plane biaxial strain range of[2%,2%].Furthermore,the band alignment of the germanane/antimonene vdW heterostructure changes from type-II to type-I at an in-plane biaxial strain of 3%.The adjustable electronic structure of this germanane/antimonene vdW heterostructure will pave the way for developing the nanoscale devices.
基金supported in part by the National Science Council of Taiwan under Grant Nos.NSC 96-2221-E-492-007-MY3 and NSC 98-2221-E-006-131-MY3National Center for Theoretical Science(NCTS)in Taiwan
文摘The low-energy electronic states and energy gaps of carbon nanocones in an electric field are studied using a single-?-band tight-binding model. The analysis considers five perfect carbon nanocones with disclination angles of 60°, 120°, 180°, 240° and 300°, respectively. The numerical results reveal that the low-energy electronic states and energy gaps of a carbon nanocones are highly sensitive to its geometric shape(i.e. the disclination angle and height), and to the direction and magnitude of an electric field. The electric field causes a strong modulation of the state energies and energy gaps of the nanocones, changes their Fermi levels, and induces zero-gap transitions. The energy-gap modulation effect becomes particularly pronounced at higher strength of the applied electric field, and is strongly related to the geometric structure of the nanocone.
基金Supported by the Natural Science Foundation of Shandong Province under Grant No ZR2009AL004.
文摘Based on the non-equilibrium Green＇s function formalism and first-principles calculations, we investigate the electronic transport properties of an anthracene-based molecular switch with two carbon nanotube electrodes. Our results show that different terminations at the carbon nanotube end strongly affect the transport properties of the switch. In the case of H-termination the current at low biases is dominated by non-resonant tunneling. In the N-termination case the current at low biases is dominated by quasi-resonant tunneling and is increased by several orders of magnitude. The enhancement is discussed by the molecular projected self-consistent Hamiltonian level, transmission function, and local density of states.
基金Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400104 and 2016YFB0400301the National Natural Science Foundation of China under Grant No 61334002the National Science and Technology Major Project
文摘As one of the most important tumor-associated antigens of colorectal adenocarcinoma, the carcinoembryonic antigen （CEA） threatens human health seriously ali over the globe. Fast electrical and highly sensitive detection of the CEA with A1GaN/GaN high electron mobility transistor is demonstrated experimentally. To achieve a low detection limit, the Au-gated sensing area of the sensor is functionalized with a CEA aptamer instead of the corresponding antibody. The proposed aptasensor has successfully detected different concentrations （ranging from 50picogram/milliliter （pg/ml） to 50 nanogram/milliliter （ng/ml）） of CEA and achieved a detection limit as low as 50pg/ml at Vas = 0.5 V. The drain-source current shows a c/ear increase of 11.5μA under this bias.
基金funded by the National Natural Science Foundation of China(No.52202446)the Young Elite Scientists Sponsorship Program by CAST(No.2022QNRC001)+2 种基金the Young Elite Scientists Sponsorship Program by BAST(No.BYESS2023050)the Beijing Association for Science and Technology’s Golden-Bridge Seed Funding Program(No.ZZ22042)the Fundamental Research Funds for the Central Universities of China。
文摘Water electrolysis for hydrogen production offers a promising solution to future energy crises and environmental challenges.Although platinum is an efficient catalyst for hydrogen evolution reactions(HERs),its high cost and stability challenges limit its widespread use.A novel platinum-based catalyst,comprising platinum nanoparticles on nitrogen-doped porous graphite(Pt-N-porous graphite),addresses these limitations.This catalyst prevents nanoparticle aggregation,provides a high specific surface area of 1308 m^(2)g^(-1),and enhances mass transfer and active site exposure.Additionally,it exhibits superior electrical conductivity compared to commercial Pt-C,enhancing charge transfer efficiency.The Pt-N-porous graphite catalyst achieves an overpotential of 99 mV at 100 mA cm^(-2)and maintains stable performance after 10,000 cycles.Applied as a catalyst-coated membrane(CCM)in a proton exchange membrane(PEM)electrolyzer,it demonstrates excellent performance.Thus,the industrially synthesizable Pt-N-porous graphite catalyst holds great potential for large-scale energy applications.
基金Supported by the National Basic Research Program of China(2011CB811404)the Natural Science Foundation of China(40774081)+1 种基金the Specialized Research Fund for State Key LaboratoriesCAS-NSSC-135 project
文摘High-energy electron precipitation in the high latitude regions enhances the ionization of the atmosphere,and subsequently increases the atmospheric conductivities and the vertical electric field of the atmosphere near the ground as well.The High-Energy Electron Flux(HEEF) data measured by the Fengyun-3 meteorological satellite are analyzed together with the data of nearsurface atmospheric vertical electric field measured at the Russian Vostok Station.Three HEEF enhancements are identified and it is shown that when the HEEF increases to a certain level,the local atmospheric vertical electric field near the ground can increase substantially than usual.The response time of the electric field to HEEF enhancement is about 3.7 to 4 days.
文摘A step stress test is carried out to study the reliability characteristics of an AlGaN/GaN high electron mobility transistor（HEMT）.An anomalous critical drain-to-gate voltage with a negative temperature coefficient is observed in the stress sequence,beyond which the HEMT device starts to recover from degradation induced by early lower voltage stress.While the performance degradation featuring the drain current slump stems from electron trapping in the surface or bulk states during low-to-medium bias stress,the recovery is attributed to high field induced electron detrapping.The carrier detrapping mechanism could be helpful for lessening the trapping-related performance degradation of a GaN-based HEMT.
基金Project supported by the Funds for Innovative Research Groups of China (Grant No. 51021005)the National Basic Research Program of China (Grant No. 2009CB724504)the National Natural Science Foundation of China (Grant No. 50707036)
文摘Local electron mean energy （LEME） has a direct effect on the rates of collisional ionization of molecules and atoms by electrons. Electron-impact ionization plays an important role and is the main process for the production of charged particles in a primary streamer discharge. Detailed research on the LEME profile in a primary streamer discharge is extremely important for a comprehensive understanding of the local physical mechanism of a streamer. In this study, the LEME profile of the primary streamer discharge in oxygen-nitrogen mixtures with a pin-plate gap of 0.5 cm under an impulse voltage is investigated using a fluid model. The fluid model includes the electron mean energy density equation, as well as continuity equations for electrons and ions and Poisson＇s electric field equation. The study finds that, except in the initial stage of the primary streamer, the LEME in the primary streamer tip tends to increase as the oxygen-nitrogen mole ratio increases and the pressure decreases. When the primary streamer bridges the gap, the LEME in the primary streamer channel is smaller than the first ionization energies of oxygen and nitrogen. The LEME in the primary streamer channel then decreases as the oxygen-nitrogen mole ratio increases and the pressure increases. The LEME in the primary streamer tip is primarily dependent on the reduced electric field with mole ratios of oxygen-nitrogen given in the oxygen-nitrogen mixtures.
基金supported by Research Funds of State Key Laboratory of Electrical Insulation and Power Equipment (Xi'an Jiaotong University) of China (No.EIPE14107)
文摘The understanding of electrical breakdown in atmospheric air across micrometer gaps is critically important for the insulation design of micro ＆ nano electronic devices. In this paper, planar aluminum electrodes with gaps ranging from 2μm to 40 #m were fabricated by microelectromechanical system technology. The influence factors including gap width and surface dielectric states were experimentally investigated using the home-built test and measurement system. Results showed that for SiO2 layers the current sustained at 2-3 nA during most of the pre-breakdown period, and then rose rapidly to 10-30 nA just before breakdown due to field electron emission, followed by the breakdown. The breakdown voltage curves demonstrated three stages： （1） a constantly decreasing region （the gap width d 〈5 μm）, where the field emission effect played an important role just near breakdown, supplying enough initial electrons for the breakdown process; （2） a plateau region with a near constant breakdown potential （5 μm〈 d 〈10 μm）; （3） a region for large gaps that adhered to Paschen＇s curve （d 〉10μm）. And the surface dielectric states including the surface resistivity and secondary electron yield were verified to be related to the propagation of discharge due to the interaction between initial electrons and dielectrics.
文摘α-MoO_3 ordered nanosheets have been synthesized under hydrothermal conditions using commercial MoO_3 and hydroquinone as structuring agent. X-ray diffraction(XRD), scanning electron microscope(SEM) and transmission electron microscopy(TEM) were used to analyse the obtained material. The conductivity mechanism of the Molybdenum ordered nanosheets has been investigated using combined complex impedance and modulus formalism.The temperature dependence of the conductivity, which was between 473 and 573 K, is very close to the Arrhenius' law, with an activation energy of 0.76 eV. However, the conductivity of the material increases with temperature. It shows a typical negative temperature coefficient resistance(NTCR) similar to that of a semiconductor. The dielectric properties of the MoO_3 compound have been studied in the temperature range of 473-573 K as well as the frequency range of 10 Hz to 13 MHz. The ac-conductivity for high frequency σac(ω)obeys the universal power law.
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61106076)
文摘In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.
基金Project supported by CAST Innovation Fund (Grant No.CAST-BISEE2019-040)。
文摘In electron beam technology, one of the critical focuses of research and development efforts is on improving the measurement of electron beam parameters. The parameters are closely related to the generation, emission, operation environment, and role of the electron beam and the corresponding medium. In this study, a field calculation method is proposed, and the electric field intensity distribution on the electron beam’s cross-section is analyzed. The characteristics of beam diffusion caused by the space charge effect are investigated in simulation, and the obtained data are compared with the experiment. The simulation demonstrated that the cross-sectional electric field distribution is primarily affected by the electron beam current, current density distribution, and electron beam propagation speed.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61704008 and 11574362)。
文摘We have successfully prepared GaN based high electron mobility transistors(HEMTs)on metallic substrates transferred from silicon substrates by electroplating technique.GaN HEMTs on Cu substrates are demonstrated to basically have the same good electric characteristics as the chips on Si substrates.Furthermore,the better heat dissipation of HEMTs on Cu substrates compared to HEMTs on Si substrates is clearly observed by thermoreflectance imaging,showing the promising potential for very high-power and high-temperature operation.This work shows the outstanding ability of HEMT chips on Cu substrates for solving the self-heating effect with the advantages of process simplicity,high yield,and low production requirement.
