We have investigated the electron affinity of Si-doped AlN films（N_（Si）= 1.0 × 10^（18）–1.0 × 10_（19）cm^（-3）） with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor dep...We have investigated the electron affinity of Si-doped AlN films（N_（Si）= 1.0 × 10^（18）–1.0 × 10_（19）cm^（-3）） with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition（MOCVD） under low pressure on the ntype（001）6H–SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy（UPS） analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 e V for the 400-nm-thick one.Accompanying the x-ray photoelectron spectroscopy（XPS） analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.展开更多
In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of...In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes have been investigated using a multi-information measurement system. The activation exper- iment shows that a surface negative electron affinity state for the GaAs photocathode can be achieved by the necessary Cs-O two-step activation and by Cs activation alone for the GaN photocathode. In addition, a quantum yield decay experiment shows that the GaN photocathode exhibits better stability and a longer lifetime in a demountable vacuum system than the GaAs photocathode. The results mean that GaN photocathodes are more promising candidates for electron source emitter use in comparison with GaAs photocathodes.展开更多
The formulae for parameters of a negative electron affinity semiconductor(NEAS)with large mean escape depth of secondary electrons A(NEASLD)are deduced.The methods for obtaining parameters such asλ,B,E_(pom)and the m...The formulae for parameters of a negative electron affinity semiconductor(NEAS)with large mean escape depth of secondary electrons A(NEASLD)are deduced.The methods for obtaining parameters such asλ,B,E_(pom)and the maximumδandδat 100.0 keV≥E_(po)≥1.0 keV of a NEASLD with the deduced formulae are presented(B is the probability that an internal secondary electron escapes into the vacuum upon reaching the emission surface of the emitter,δis the secondary electron yield,E_(po)is the incident energy of primary electrons and E_(pom)is the E_(po)corresponding to the maximumδ).The parameters obtained here are analyzed,and it can be concluded that several parameters of NEASLDs obtained by the methods presented here agree with those obtained by other authors.The relation between the secondary electron emission and photoemission from a NEAS with large mean escape depth of excited electrons is investigated,and it is concluded that the presented method of obtaining A is more accurate than that of obtaining the corresponding parameter for a NEAS with largeλ_(ph)(λ_(ph)being the mean escape depth of photoelectrons),and that the presented method of calculating B at E_(po)>10.0 keV is more widely applicable for obtaining the corresponding parameters for a NEAS with largeλ_(ph).展开更多
Electron affinities(EA)of most lanthanide elements still remain unknown owing to their relatively lower EA values and the fairly complicated electronic structures.In the present work,we report the high-resolution phot...Electron affinities(EA)of most lanthanide elements still remain unknown owing to their relatively lower EA values and the fairly complicated electronic structures.In the present work,we report the high-resolution photoelectron spectra of atomic cerium anion Ce−using the slow electron velocity-map imaging method in combination with a cold ion trap.The electron affinity of Ce is determined to be 4840.62(21)cm^-1 or 0.600160(26)eV.Moreover,several excited states of Ce(^4H9/2,^4I9/2,^2H9/2,^2G9/2,^2G7/2,^4H13/2,^2F5/2,and ^4I13/2)are observed.展开更多
Diamond has an ultrawide bandgap with excellent physical properties,such as high critical electric field,excellent thermal conductivity,high carrier mobility,etc.Diamond with a hydrogen-terminated(H-terminated)surface...Diamond has an ultrawide bandgap with excellent physical properties,such as high critical electric field,excellent thermal conductivity,high carrier mobility,etc.Diamond with a hydrogen-terminated(H-terminated)surface has a negative electron affinity(NEA)and can easily produce surface electrons from valence or trapped electrons via optical absorption,thermal heating energy or carrier transport in a PN junction.The NEA of the H-terminated surface enables surface electrons to emit with high efficiency into the vacuum without encountering additional barriers and promotes further development and application of diamond-based emitting devices.This article reviews the electron emission properties of H-terminated diamond surfaces exhibiting NEA characteristics.The electron emission is induced by different physical mechanisms.Recent advancements in electron-emitting devices based on diamond are also summarized.Finally,the current challenges and future development opportunities are discussed to further develop the relevant applications of diamond-based electronemitting devices.展开更多
Based on a simple classical model specifying that the primary electrons interact with the electrons of a lattice through the Coulomb force and a conclusion that the lattice scattering can be ignored, the formula for t...Based on a simple classical model specifying that the primary electrons interact with the electrons of a lattice through the Coulomb force and a conclusion that the lattice scattering can be ignored, the formula for the average energy required to produce a secondary electron （ε） is obtained. On the basis of the energy band of an insulator and the formula for e, the formula for the average energy required to produce a secondary electron in an insulator （εi） is deduced as a function of the width of the forbidden band （Eg） and electron affinity X. Experimental values and the εi values calculated with the formula are compared, and the results validate the theory that explains the relationships among Eg, X, and ei and suggest that the formula for εi is universal on the condition that the primary electrons at any energy hit the insulator.展开更多
The molecular structures,electron affinities,vibrational frequencies and IR intensities of the SF5OX/SF5OX-（X=F,Cl,Br）species have been determined by four different density functional theory（DFT）methods（B3LYP,BHL...The molecular structures,electron affinities,vibrational frequencies and IR intensities of the SF5OX/SF5OX-（X=F,Cl,Br）species have been determined by four different density functional theory（DFT）methods（B3LYP,BHLYP,BP86,BLYP）in conjunction with DZP＋＋ basis set.The BHLYP method predicts the best geometry parameters.The adiabatic electron affinities（EAad）predicted by the B3LYP/DZP＋＋ method are 4.36 eV（SF5OF）,4.13 eV（SF5OCl）,4.12 eV（SF5OBr）,respectively.Large electron affinity implies the corresponding anions are stable.The total intensities in the near IR ＂window＂ of the anions SF5OX-（X=F,Cl,Br）at B3LYP level are 1 602 km/mol（SF5OF-）,1 868 km/mol（SF5OCl-）and 1 916 km/mol（SF5OBr-）,respectively,larger than those of the corresponding neutrals.It suggests that SF5OX/SF5OX-（X=F,Cl,Br）may be used to ＂warm＂ Mars.展开更多
The electron affinities of the isomer XC6H4CH2/ XC6H4CH2- (X=F, Cl, Br) species have been determined using seven density functional theory (DFT) methods. The basis set used in this work is of double-ζ plus polarizati...The electron affinities of the isomer XC6H4CH2/ XC6H4CH2- (X=F, Cl, Br) species have been determined using seven density functional theory (DFT) methods. The basis set used in this work is of double-ζ plus polarization quality with additional diffuse s- and p-type functions, denoted DZP++. Three different types of the neutral-anion energy separations reported in this work are the adiabatic electron affinity (EAad), the vertical electron affinity (EAvert), and the vertical detachment energy (VDE). The most reliable adiabatic electron affinities are obtained at the DZP++ BPW91, BP86, and B3LYP level of theory. The BPW91 methods are the closest to the experiment values; The BHLYP method predicts the smallest EAad and B3P86 method predicts the largest EAad, which are the worst reliable methods. In addition, for a given halogen substituent, the meta isomer has the largest electron affinity and the para isomer has the smallest.展开更多
Mixed cation and anion based perovskites solar cells exhibited enhanced stability under outdoor conditions,however,it yielded limited power conversion efficiency when TiO_(2) and Spiro-OMeTAD were employed as electron...Mixed cation and anion based perovskites solar cells exhibited enhanced stability under outdoor conditions,however,it yielded limited power conversion efficiency when TiO_(2) and Spiro-OMeTAD were employed as electron and hole transport layer(ETL/HTL)respectively.The inevitable interfacial recombination of charge carriers at ETL/perovskite and perovskite/HTL interface diminished the efficiency in planar(n-i-p)perovskite solar cells.By employing computational approach for uni-dimensional device simulator,the effect of band offset on charge recombination at both interfaces was investigated.We noted that it acquired cliff structure when the conduction band minimum of the ETL was lower than that of the perovskite,and thus maximized interfacial recombination.However,if the conduction band minimum of ETL is higher than perovskite,a spike structure is formed,which improve the performance of solar cell.An optimum value of conduction band offset allows to reach performance of 25.21%,with an open circuit voltage(VOC)of 1231 mV,a current density JSC of 24.57 mA/cm^(2) and a fill factor of 83.28%.Additionally,we found that beyond the optimum offset value,large spike structure could decrease the performance.With an optimized energy level of Spiro-OMeTAD and the thickness of mixed-perovskite layer performance of 26.56% can be attained.Our results demonstrate a detailed understanding about the energy level tuning between the charge selective layers and perovskite and how the improvement in PV performance can be achieved by adjusting the energy level offset.展开更多
Fabrication of ambipolar organic field-effect transistors （OFETs） is essential for the achievement of an organic complementary logic circuit. Ambipolar transports in OFETs with heterojunction structures are realized...Fabrication of ambipolar organic field-effect transistors （OFETs） is essential for the achievement of an organic complementary logic circuit. Ambipolar transports in OFETs with heterojunction structures are realized.We select pentacene as a P-type material and N,N＇-bis（4-trifluoromethylben-zyl）perylene-3,4,9,10-tetracarboxylic diimide （PTCDI-TFB） as a n-type material in the active layer of the OFETs.The field-effect transistor shows highly air-stable ambipolar characteristics with a field-effect hole mobility of 0.18 cm^2/（V·s） and field-effect electron mobility of 0.031 cm^2/（V·s）.Furthermore the mobility only slightly decreases after being exposed to air and remains stable even for exposure to air for more than 60 days.The high electron affinity of PTCDI-TFB and the octadecyltrichlorosilane （OTS） self-assembly monolayer between the SiO2 gate dielectric and the organic active layer result in the observed air-stable characteristics of OFETs with high mobility.The results demonstrate that using the OTS as a modified gate insulator layer and using high electron affinity semiconductor materials are two effective methods to fabricate OFETs with air-stable characteristics and high mobility.展开更多
The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride （A1N） thin films with a thickness of about 100 nm are pre...The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride （A1N） thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC （0001） substrate at 1100℃ by metal organic chemical vapor deposition （MOCVD） under low pressure. The I-V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I-V and Fowler-Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/μm and the maximum emission current density is 154 mA/cm2 at 69.3 V for the Si- doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission.展开更多
The stability of a reflection-mode GaAs photocathode has been investigated by monitoring the photocurrent and the spectral response at room temperature. We observe the photocurrent of the cathode decaying with time in...The stability of a reflection-mode GaAs photocathode has been investigated by monitoring the photocurrent and the spectral response at room temperature. We observe the photocurrent of the cathode decaying with time in the vacuum system under the action of Cs current, and find that the Cs atoms residing in the vacuum system are helpful in prolonging the life of the cathode. We examine the evolution and analyse the influence of the barrier on the spectral response of the cathode. Our results support the double dipolar mode] for the explanation of the negative electron affinity effect.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574135,61574134,61474142,61474110,61377020,61376089,61223005,and 61321063)the One Hundred Person Project of the Chinese Academy of Sciencesthe Basic Research Project of Jiangsu Province,China(Grant No.BK20130362)
文摘We have investigated the electron affinity of Si-doped AlN films（N_（Si）= 1.0 × 10^（18）–1.0 × 10_（19）cm^（-3）） with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition（MOCVD） under low pressure on the ntype（001）6H–SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy（UPS） analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 e V for the 400-nm-thick one.Accompanying the x-ray photoelectron spectroscopy（XPS） analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60801036 and 61067001)the Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institutions (Grant No. CX09B 096Z)the Research Foundation of Nanjing University of Science and Technology (Grant No. 2010ZYTS032)
文摘In view of the important application of GaAs and GaN photocathodes in electron sources, differences in photoe- mission behaviour, namely the activation process and quantum yield decay, between the two typical types of III-V compound photocathodes have been investigated using a multi-information measurement system. The activation exper- iment shows that a surface negative electron affinity state for the GaAs photocathode can be achieved by the necessary Cs-O two-step activation and by Cs activation alone for the GaN photocathode. In addition, a quantum yield decay experiment shows that the GaN photocathode exhibits better stability and a longer lifetime in a demountable vacuum system than the GaAs photocathode. The results mean that GaN photocathodes are more promising candidates for electron source emitter use in comparison with GaAs photocathodes.
基金Project supported by the National Natural Science Foundation of China(Grant No.11873013)。
文摘The formulae for parameters of a negative electron affinity semiconductor(NEAS)with large mean escape depth of secondary electrons A(NEASLD)are deduced.The methods for obtaining parameters such asλ,B,E_(pom)and the maximumδandδat 100.0 keV≥E_(po)≥1.0 keV of a NEASLD with the deduced formulae are presented(B is the probability that an internal secondary electron escapes into the vacuum upon reaching the emission surface of the emitter,δis the secondary electron yield,E_(po)is the incident energy of primary electrons and E_(pom)is the E_(po)corresponding to the maximumδ).The parameters obtained here are analyzed,and it can be concluded that several parameters of NEASLDs obtained by the methods presented here agree with those obtained by other authors.The relation between the secondary electron emission and photoemission from a NEAS with large mean escape depth of excited electrons is investigated,and it is concluded that the presented method of obtaining A is more accurate than that of obtaining the corresponding parameter for a NEAS with largeλ_(ph)(λ_(ph)being the mean escape depth of photoelectrons),and that the presented method of calculating B at E_(po)>10.0 keV is more widely applicable for obtaining the corresponding parameters for a NEAS with largeλ_(ph).
基金Project supported by the National Natural Science Foundation of China(Grant Nos.91736102 and 11974199)the National Key R&D Program of China(Grant No.2018YFA0306504).
文摘Electron affinities(EA)of most lanthanide elements still remain unknown owing to their relatively lower EA values and the fairly complicated electronic structures.In the present work,we report the high-resolution photoelectron spectra of atomic cerium anion Ce−using the slow electron velocity-map imaging method in combination with a cold ion trap.The electron affinity of Ce is determined to be 4840.62(21)cm^-1 or 0.600160(26)eV.Moreover,several excited states of Ce(^4H9/2,^4I9/2,^2H9/2,^2G9/2,^2G7/2,^4H13/2,^2F5/2,and ^4I13/2)are observed.
基金the National Natural Sci-ence Foundation of China(Grant No.62274084)the Fun-damental Research Funds for the Central Universities(Grant No.0210-14380193).
文摘Diamond has an ultrawide bandgap with excellent physical properties,such as high critical electric field,excellent thermal conductivity,high carrier mobility,etc.Diamond with a hydrogen-terminated(H-terminated)surface has a negative electron affinity(NEA)and can easily produce surface electrons from valence or trapped electrons via optical absorption,thermal heating energy or carrier transport in a PN junction.The NEA of the H-terminated surface enables surface electrons to emit with high efficiency into the vacuum without encountering additional barriers and promotes further development and application of diamond-based emitting devices.This article reviews the electron emission properties of H-terminated diamond surfaces exhibiting NEA characteristics.The electron emission is induced by different physical mechanisms.Recent advancements in electron-emitting devices based on diamond are also summarized.Finally,the current challenges and future development opportunities are discussed to further develop the relevant applications of diamond-based electronemitting devices.
基金Project supported by the Special Funds of the National Natural Science Foundation of China (Grant No. 51245010)the Natural Science Foundation of Jiangsu Province, China (Grant No. 10KJB180004)
文摘Based on a simple classical model specifying that the primary electrons interact with the electrons of a lattice through the Coulomb force and a conclusion that the lattice scattering can be ignored, the formula for the average energy required to produce a secondary electron （ε） is obtained. On the basis of the energy band of an insulator and the formula for e, the formula for the average energy required to produce a secondary electron in an insulator （εi） is deduced as a function of the width of the forbidden band （Eg） and electron affinity X. Experimental values and the εi values calculated with the formula are compared, and the results validate the theory that explains the relationships among Eg, X, and ei and suggest that the formula for εi is universal on the condition that the primary electrons at any energy hit the insulator.
基金Sponsored by the National Natural Science Foundation of China(20773014)the "111" Project of China(B07012)
文摘The molecular structures,electron affinities,vibrational frequencies and IR intensities of the SF5OX/SF5OX-（X=F,Cl,Br）species have been determined by four different density functional theory（DFT）methods（B3LYP,BHLYP,BP86,BLYP）in conjunction with DZP＋＋ basis set.The BHLYP method predicts the best geometry parameters.The adiabatic electron affinities（EAad）predicted by the B3LYP/DZP＋＋ method are 4.36 eV（SF5OF）,4.13 eV（SF5OCl）,4.12 eV（SF5OBr）,respectively.Large electron affinity implies the corresponding anions are stable.The total intensities in the near IR ＂window＂ of the anions SF5OX-（X=F,Cl,Br）at B3LYP level are 1 602 km/mol（SF5OF-）,1 868 km/mol（SF5OCl-）and 1 916 km/mol（SF5OBr-）,respectively,larger than those of the corresponding neutrals.It suggests that SF5OX/SF5OX-（X=F,Cl,Br）may be used to ＂warm＂ Mars.
文摘The electron affinities of the isomer XC6H4CH2/ XC6H4CH2- (X=F, Cl, Br) species have been determined using seven density functional theory (DFT) methods. The basis set used in this work is of double-ζ plus polarization quality with additional diffuse s- and p-type functions, denoted DZP++. Three different types of the neutral-anion energy separations reported in this work are the adiabatic electron affinity (EAad), the vertical electron affinity (EAvert), and the vertical detachment energy (VDE). The most reliable adiabatic electron affinities are obtained at the DZP++ BPW91, BP86, and B3LYP level of theory. The BPW91 methods are the closest to the experiment values; The BHLYP method predicts the smallest EAad and B3P86 method predicts the largest EAad, which are the worst reliable methods. In addition, for a given halogen substituent, the meta isomer has the largest electron affinity and the para isomer has the smallest.
基金funding from the European Union H2020 programme under Excellence research,ERC grant MOLEMAT(726360)PARASOL(RTI2018-102292-B-I00)from Spanish ministry of Science and Innovation。
文摘Mixed cation and anion based perovskites solar cells exhibited enhanced stability under outdoor conditions,however,it yielded limited power conversion efficiency when TiO_(2) and Spiro-OMeTAD were employed as electron and hole transport layer(ETL/HTL)respectively.The inevitable interfacial recombination of charge carriers at ETL/perovskite and perovskite/HTL interface diminished the efficiency in planar(n-i-p)perovskite solar cells.By employing computational approach for uni-dimensional device simulator,the effect of band offset on charge recombination at both interfaces was investigated.We noted that it acquired cliff structure when the conduction band minimum of the ETL was lower than that of the perovskite,and thus maximized interfacial recombination.However,if the conduction band minimum of ETL is higher than perovskite,a spike structure is formed,which improve the performance of solar cell.An optimum value of conduction band offset allows to reach performance of 25.21%,with an open circuit voltage(VOC)of 1231 mV,a current density JSC of 24.57 mA/cm^(2) and a fill factor of 83.28%.Additionally,we found that beyond the optimum offset value,large spike structure could decrease the performance.With an optimized energy level of Spiro-OMeTAD and the thickness of mixed-perovskite layer performance of 26.56% can be attained.Our results demonstrate a detailed understanding about the energy level tuning between the charge selective layers and perovskite and how the improvement in PV performance can be achieved by adjusting the energy level offset.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 60676033 and 60276026)the Natural Science Foundation of Gansu Province,China (Grant No ZS031-A25-012-G)‘Qing Lan’ Talent Engineering Funds from Lanzhou Jiaotong University,China (Grant No QL-08-18A)
文摘Fabrication of ambipolar organic field-effect transistors （OFETs） is essential for the achievement of an organic complementary logic circuit. Ambipolar transports in OFETs with heterojunction structures are realized.We select pentacene as a P-type material and N,N＇-bis（4-trifluoromethylben-zyl）perylene-3,4,9,10-tetracarboxylic diimide （PTCDI-TFB） as a n-type material in the active layer of the OFETs.The field-effect transistor shows highly air-stable ambipolar characteristics with a field-effect hole mobility of 0.18 cm^2/（V·s） and field-effect electron mobility of 0.031 cm^2/（V·s）.Furthermore the mobility only slightly decreases after being exposed to air and remains stable even for exposure to air for more than 60 days.The high electron affinity of PTCDI-TFB and the octadecyltrichlorosilane （OTS） self-assembly monolayer between the SiO2 gate dielectric and the organic active layer result in the observed air-stable characteristics of OFETs with high mobility.The results demonstrate that using the OTS as a modified gate insulator layer and using high electron affinity semiconductor materials are two effective methods to fabricate OFETs with air-stable characteristics and high mobility.
基金supported by the National Natural Science Foundation of China(Grant Nos.61474110,61377020,61376089,61223005,and 61176126)the Open Project of the Key Laboratory of Nano-devices and Applications,China(Grant No.13ZS04)the National Science Fund for Distinguished Young Scholars,China(Grant No.60925017)
文摘The field emission characteristics of the AlN thin films with micro-scaled cold cathode structures are tested in the high vacuum system. The aluminum nitride （A1N） thin films with a thickness of about 100 nm are prepared on the n-type 6H-SiC （0001） substrate at 1100℃ by metal organic chemical vapor deposition （MOCVD） under low pressure. The I-V curves and surface micro-images of undoped and Si-doped AlN films are investigated. From the I-V and Fowler-Nordheim plots, it can be seen that the Si-doped AlN shows better field emission characteristics compared with the undoped AlN sample. The obtained turn-on field is 6.7 V/μm and the maximum emission current density is 154 mA/cm2 at 69.3 V for the Si- doped AlN film cathode after proper surface treatment. It is proposed that the relatively low electric resistivity of Si-doped AlN films is significant for electron migration to the surface region, and their rougher surface morphology is beneficial to a higher local electric field enhancement for the field emission.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60678043,60871012,and 60801036)the Research Funding of Nanjing University of Science and Technology (Grant No. 2010ZYTS032)
文摘The stability of a reflection-mode GaAs photocathode has been investigated by monitoring the photocurrent and the spectral response at room temperature. We observe the photocurrent of the cathode decaying with time in the vacuum system under the action of Cs current, and find that the Cs atoms residing in the vacuum system are helpful in prolonging the life of the cathode. We examine the evolution and analyse the influence of the barrier on the spectral response of the cathode. Our results support the double dipolar mode] for the explanation of the negative electron affinity effect.
