Electrostatic discharge(ESD)event usually destroys the electrical properties of dielectric films,resulting in product failure.In this work,the breakdown characteristic of machine mode(MM)ESD on three different nano si...Electrostatic discharge(ESD)event usually destroys the electrical properties of dielectric films,resulting in product failure.In this work,the breakdown characteristic of machine mode(MM)ESD on three different nano size films of head gimble assemble are obtained experimentally.The breakdown voltage and thickness parameters show a positive proportional relationship,but they are generally very low and have large discrete characteristics(~30%).The maximum and minimum breakdown voltages of the tested samples are 1.08 V and 0.46 V,which are far lower than the requirement of the current standard(25 V).In addition,the judgment criterion of product damage is given,and the relationship between discharge voltage polarity,initial resistance and breakdown voltage is studied.Finally,the theoretical analysis of the breakdown characteristic law has been given.展开更多
A robust electron device called the enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/2...A robust electron device called the enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/24-V BCD process. The proposed EGDTSCR is constructed by adding two gated diodes into a conventional ESD device called the modified lateral silicon-controlled rectifier (MLSCR). With the shunting effect of the surface gated diode path, the proposed EGDTSCR, with a width of 50 μm, exhibits a higher failure current (i.e., 3.82 A) as well as a higher holding voltage (i.e., 10.21 V) than the MLSCR.展开更多
A novel diode string-triggered gated-Pi N junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor（CMOS） technology, is proposed in this paper. An embedded gated-Pi N junction...A novel diode string-triggered gated-Pi N junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor（CMOS） technology, is proposed in this paper. An embedded gated-Pi N junction structure is employed to reduce the diode string leakage current to 13 n A/μm in a temperature range from 25°C to 85°C. To provide the effective electrostatic discharge（ESD） protection in multi-voltage power supply, the triggering voltage of the novel device can be adjusted through redistributing parasitic resistance instead of changing the stacked diode number.展开更多
The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the devic...The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.展开更多
In this study,the characteristics of Electromagnetic(EM) radiation caused by Electrostatic Discharges(ESDs) from metal spheres charged to voltages less than 1 kV are examined experimentally.Our experimental system con...In this study,the characteristics of Electromagnetic(EM) radiation caused by Electrostatic Discharges(ESDs) from metal spheres charged to voltages less than 1 kV are examined experimentally.Our experimental system consists of a pair of spherical electrodes of different diameters,a 1-18 GHz-bandwidth horn antenna and a 20-GHz-bandwidth digitizing oscilloscope.Polarization,waveform duration and peaks of antenna-received voltages from the EM field radiation are measured in order to clarify the EM radiation mechanism.The ratio of the received voltages between the antenna arrangements of the field polarization parallel and perpendicular to the spark pass is 18 to 20 dB.The polarities of the antenna-received voltages are the same as those of the charge voltages across the gap.Moreover,the waveform duration and the first peaks increase with an increase in the diameters of the spherical electrodes.Consequently,we find that the polarization,waveform duration and first peaks of the EM field radiation can be explained by a dipole antenna structure,which makes the spark part of the spherical electrodes a feeding point on the straight line passing through the centres of the two spheres.展开更多
文摘Electrostatic discharge(ESD)event usually destroys the electrical properties of dielectric films,resulting in product failure.In this work,the breakdown characteristic of machine mode(MM)ESD on three different nano size films of head gimble assemble are obtained experimentally.The breakdown voltage and thickness parameters show a positive proportional relationship,but they are generally very low and have large discrete characteristics(~30%).The maximum and minimum breakdown voltages of the tested samples are 1.08 V and 0.46 V,which are far lower than the requirement of the current standard(25 V).In addition,the judgment criterion of product damage is given,and the relationship between discharge voltage polarity,initial resistance and breakdown voltage is studied.Finally,the theoretical analysis of the breakdown characteristic law has been given.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61874098 and 61974017)the Fundamental Research Project for Central Universities,China(Grant No.ZYGX2018J025).
文摘A robust electron device called the enhanced gated-diode-triggered silicon-controlled rectifier (EGDTSCR) for electrostatic discharge (ESD) protection applications has been proposed and implemented in a 0.18-μm 5-V/24-V BCD process. The proposed EGDTSCR is constructed by adding two gated diodes into a conventional ESD device called the modified lateral silicon-controlled rectifier (MLSCR). With the shunting effect of the surface gated diode path, the proposed EGDTSCR, with a width of 50 μm, exhibits a higher failure current (i.e., 3.82 A) as well as a higher holding voltage (i.e., 10.21 V) than the MLSCR.
基金Project supported by the National Basic Research Program of China(Grant No.2011CBA00606)
文摘A novel diode string-triggered gated-Pi N junction device, which is fabricated in a standard 65-nm complementary metal-oxide semiconductor（CMOS） technology, is proposed in this paper. An embedded gated-Pi N junction structure is employed to reduce the diode string leakage current to 13 n A/μm in a temperature range from 25°C to 85°C. To provide the effective electrostatic discharge（ESD） protection in multi-voltage power supply, the triggering voltage of the novel device can be adjusted through redistributing parasitic resistance instead of changing the stacked diode number.
基金Project supported by the Beijing Municipal Natural Science Foundation,China(Grant No.4162030)the National Science and Technology Major Project of China(Grant No.2013ZX02303002)
文摘The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.
文摘In this study,the characteristics of Electromagnetic(EM) radiation caused by Electrostatic Discharges(ESDs) from metal spheres charged to voltages less than 1 kV are examined experimentally.Our experimental system consists of a pair of spherical electrodes of different diameters,a 1-18 GHz-bandwidth horn antenna and a 20-GHz-bandwidth digitizing oscilloscope.Polarization,waveform duration and peaks of antenna-received voltages from the EM field radiation are measured in order to clarify the EM radiation mechanism.The ratio of the received voltages between the antenna arrangements of the field polarization parallel and perpendicular to the spark pass is 18 to 20 dB.The polarities of the antenna-received voltages are the same as those of the charge voltages across the gap.Moreover,the waveform duration and the first peaks increase with an increase in the diameters of the spherical electrodes.Consequently,we find that the polarization,waveform duration and first peaks of the EM field radiation can be explained by a dipole antenna structure,which makes the spark part of the spherical electrodes a feeding point on the straight line passing through the centres of the two spheres.
