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Electrical Parameters of the Vacuum Vessel in HT-7U Tokamak 被引量:1
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作者 杜世俊 陶果 《Plasma Science and Technology》 SCIE EI CAS CSCD 2001年第2期703-708,共6页
A method is presented to express the electrical parameters of the vacuum vessel in this paper. According to the results of numerical computation and the distribution of the eddy currents, the mutual inductance can be ... A method is presented to express the electrical parameters of the vacuum vessel in this paper. According to the results of numerical computation and the distribution of the eddy currents, the mutual inductance can be given by calculating the flux produced by the toroidal eddy currents. The time constants of the vacuum vessel of HT-7U tokamak are derived from the decay characteristics of the eddy currents. 展开更多
关键词 electrical parameters of the Vacuum Vessel in HT-7U Tokamak HT
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Influence of electrical parameters on H2O2 generation in DBD non-thermal reactor with water mist
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作者 Di XU Zehua XIAO +2 位作者 Chunjing HAO Jian QIU Kefu LIU 《Plasma Science and Technology》 SCIE EI CAS CSCD 2017年第6期26-32,共7页
A dielectric barrier discharge(DBD) reactor is introduced to generate H2O2 by non-thermal plasma with a mixture of oxygen and water mist produced by an ultrasonic atomizer.The results of our experiment show that the... A dielectric barrier discharge(DBD) reactor is introduced to generate H2O2 by non-thermal plasma with a mixture of oxygen and water mist produced by an ultrasonic atomizer.The results of our experiment show that the energy yield and concentration of the generated H2O2 in the pulsed discharge are much higher than that in AC discharge,due to its high energy efficiency and low heating effect.Micron-sized liquid droplets produced by an ultrasonic atomizer in water mist have large specific surface area,which greatly reduces mass transfer resistance between hydroxyl radicals and water liquids,leading to higher energy yield and H2O2 concentration than in our previous research.The influence of applied voltage,discharge frequency,and environmental temperature on the generated H2O2 is discussed in detail from the viewpoint of the DBD mechanism.The H2O2 concentration of 30 mg l^-1,with the energy yield of 2 gkW^-1h^-1 is obtained by pulsed discharge in our research. 展开更多
关键词 hydrogen peroxide dielectric barrier discharge pulsed discharge non-thermal plasma electrical parameters
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The Power Supply System of Ion Source for NBI 被引量:7
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作者 刘智民 刘小宁 +6 位作者 胡纯栋 胡立群 刘胜 宋士花 李军 韩筱璞 汪永军 《Plasma Science and Technology》 SCIE EI CAS CSCD 2005年第3期2819-2821,共3页
The power supply system of ion source for the Neutral Beam Injector (NBI) in the HT-7 superconducting tokamak is based on a single injector with one ion source that can deliver 700 kW of neutral beam power. Experiment... The power supply system of ion source for the Neutral Beam Injector (NBI) in the HT-7 superconducting tokamak is based on a single injector with one ion source that can deliver 700 kW of neutral beam power. Experiments and a discharges test on the ion source were successfully performed. In this paper, the circuit structures and features of every power supply are described and the results of the discharges test are presented. 展开更多
关键词 neutral beam injector (NBI) power supply electrical parameter acquisition
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Research on the ions’axial temperature of a sympathetically-cooled ^(113)Cd^(+)ion crystal 被引量:1
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作者 Nong-Chao Xin Sheng-Nan Miao +6 位作者 Hao-Ran Qin Li-Ming Guo Ji-Ze Han Hua-Xing Hu Wen-Xin Shi Jian-Wei Zhang Li-Jun Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第11期318-324,共7页
Molecular dynamics simulation of a sympathetically-cooled ^(113)Cd^(+)ion crystal system is achieved.Moreover,the relationship between ions’axial temperature and different electric parameters,including radio frequenc... Molecular dynamics simulation of a sympathetically-cooled ^(113)Cd^(+)ion crystal system is achieved.Moreover,the relationship between ions’axial temperature and different electric parameters,including radio frequency voltage and endcap voltage is depicted.Under stable trapping condition,optimum radio frequency voltage,corresponding to minimum temperature and the highest cooling efficiency,is obtained.The temperature is positively correlated with end-cap voltage.The relationship is also confirmed by a sympathetically-cooled ^(113)Cd^(+) microwave clock.The pseudo-potential model is used to illustrate the relationship and influence mechanism.A reasonable index,indicating ions’temperature,is proposed to quickly estimate the relative ions’temperature.The investigation is helpful for ion crystal investigation,such as spatial configuration manipulation,sympathetic cooling efficiency enhancement,and temporal evolution. 展开更多
关键词 ion temperature sympathetic cooling electric parameters microwave clock
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Understanding of impact of carbon doping on background carrier conduction in GaN
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作者 Zhenxing Liu Liuan Li +5 位作者 Jinwei Zhang Qianshu Wu Yapeng Wang Qiuling Qiu Zhisheng Wu Yang Liu 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第10期506-512,共7页
The impact of carbon doping on the background carrier conduction in GaN has been investigated.It is found that the incorporation of carbon can effectively suppress the n-type background carrier concentration as expect... The impact of carbon doping on the background carrier conduction in GaN has been investigated.It is found that the incorporation of carbon can effectively suppress the n-type background carrier concentration as expected.Moreover,from the fitting of the temperature-dependent carrier concentration and mobility,it is observed that high nitrogen-vacancy(VN)dominates the background carrier at room temperature which consequently results in n-type conduction.The doping agent(carbon atom)occupies the nitrogen site of GaN and forms CN deep acceptor as revealed from photoluminescence.Besides,a relatively low hole concentration is ionized at room temperature which was insufficient for the compensation of n-type background carriers.Therefore,we concluded that this background carrier concentration can be suppressed by carbon doping,which substitutes the N site of GaN and finally decreases the VN. 展开更多
关键词 electrical properties and parameters semiconductor materials chemical vapor deposition electronic transport
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