An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented...An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects （SCEs） and the drain induced barrier lowering （DIBL） more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLASTM 2D device simulator.展开更多
The traditional geometrical depolarization model that single transmitter to single receiver provides a simple method of polarization channel modeling. It can obtain the geometrical depolarization effect of each path i...The traditional geometrical depolarization model that single transmitter to single receiver provides a simple method of polarization channel modeling. It can obtain the geometrical depolarization effect of each path if known the antenna configuration, the polarization field radiation pattern and the spatial distribution of scatters. With the development of communication technology, information transmission spectrum is more and more scarce. The original model provides only a single channel polarization state, so the information will be limited that the polarization state carries in the polarization modulation. The research is so significance that how to carries polarization modulation information by using multi-antenna polarization state. However, the present study shows that have no depolarization effect model for multi-antenna systems. In this paper, we propose a multi-antenna geometrical depolarization model. On the basis of a single antenna to calculate the depolarization effect of the model, and through simulation to analysis the main factors that influence the depolarization effect. This article provides a multi-antenna geometrical depolarization channel modeling that can applied to large-scale array antenna, and to some extent increase the speed of information transmission.展开更多
In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along wit...In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.展开更多
The bias dependence of radiation-induced narrow-width channel effects（RINCEs） in 65-nm n-type metal-oxidesemiconductor field-effect transistors（NMOSFETs） is investigated. The threshold voltage of the narrow-width6...The bias dependence of radiation-induced narrow-width channel effects（RINCEs） in 65-nm n-type metal-oxidesemiconductor field-effect transistors（NMOSFETs） is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.展开更多
Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative thr...Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.展开更多
Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface chann...Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator （SGOI） MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects （SCE）, the drain-induced barrier-lowering （DIBL） and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.展开更多
Based on the exact resultant solution of two-dimensional Poisson＇s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have bee...Based on the exact resultant solution of two-dimensional Poisson＇s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor （CMOS）-based device in a nanoscale regime.展开更多
We propose a scaling theory for single gate Al In Sb/In Sb high electron mobility transistors（HEMTs） by solving the two-dimensional（2D） Poisson equation. In our model, the effective conductive path effect（ECPE） ...We propose a scaling theory for single gate Al In Sb/In Sb high electron mobility transistors（HEMTs） by solving the two-dimensional（2D） Poisson equation. In our model, the effective conductive path effect（ECPE） is taken into account to overcome the problems arising from the device scaling. The potential in the effective conducting path is developed and a simple scaling equation is derived. This equation is solved to obtain the minimum channel potential Φdeff,minand the new scaling factor α to model the subthreshold behavior of the HEMTs. The developed model minimizes the leakage current and improves the subthreshold swing degradation of the HEMTs. The results of the analytical model are verified by numerical simulation with a Sentaurus TCAD device simulator.展开更多
In order to study the permeability and water-resisting ability of the strata on the top of the Ordovician in Longgu Coal Mine, this paper tested the permeability and porosity of the strata, investigated the fracture a...In order to study the permeability and water-resisting ability of the strata on the top of the Ordovician in Longgu Coal Mine, this paper tested the permeability and porosity of the strata, investigated the fracture and pore structure features of the strata, and identified the main channels which govern the permeability and water-resisting ability of the strata. The permeability of the upper, central and lower strata shows as 2.0504 × 10^-3-2.782762× 10^-3, 4.1092 × 10^-3 -7.3387 × 10^-3 and 2.0891 ×10^-3-3.2705 × 10-3 μm^2, respectively, and porosity of that is 0.6786-0.9197%, 0.3109-0.3951% and 0.9829-1.8655%, respectively. The results indicate that： （I） the main channels of the relative water-resisting layer are the pore throats with a diameter more than 6 μm; （2） the major proportion of pore throats in the vertical flow channel and the permeability first increases and then sharply decreases; （3） the fractures occurring from the top to 20 m in depth of the strata were filled and there occurred almost no fracture under the depth of 40 m; and （4） the ratio of turning point of the main flow channel in the strata on top of Ordovician can be used to confirm the thickness of filled water-resisting lavers.展开更多
By performing a molecular dynamics simulation, fragmentation of Cu_n clusters scattering from a single-crystal Cu（111） surface is studied. The interactions among copper atoms are modeled by tight-binding potential, ...By performing a molecular dynamics simulation, fragmentation of Cu_n clusters scattering from a single-crystal Cu（111） surface is studied. The interactions among copper atoms are modeled by tight-binding potential, and the positions of the copper clusters at each time step are calculated by integrating the Newton equations of motion. The percentage of unfragmented clusters depends on the incident velocities, angles of incidence, and surface structure. The influence of surface structure on the fragment distribution is discussed, and the clusters appear to be more stable under an axial channeling condition. The fragment distribution shifting toward the small fragment range for cluster scattering along a random direction is confirmed, indicating that the cluster undergoes more intensive fragmentation.展开更多
We preform a first-principles study of performance of 5 nm double-gated(DG)Schottky-barrier field effect transistors(SBFETs)based on two-dimensional SiC with monolayer or bilayer metallic 1T-phase MoS_(2) contacts.Bec...We preform a first-principles study of performance of 5 nm double-gated(DG)Schottky-barrier field effect transistors(SBFETs)based on two-dimensional SiC with monolayer or bilayer metallic 1T-phase MoS_(2) contacts.Because of the wide bandgap of SiC,the corresponding DG SBFETs can weaken the short channel effect.The calculated transfer characteristics also meet the standard of the high performance transistor summarized by international technology road-map for semiconductors.Moreover,the bilayer metallic 1T-phase MoS_(2) contacts in three stacking structures all can further raise the ON-state currents of DG SiC SBFETs in varying degrees.The above results are helpful and instructive for design of short channel transistors in the future.展开更多
Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we obser...Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.展开更多
We investigate high-order harmonic generation from atoms irradiated by bichromatic counter-rotating circularly polarized laser pulses by numerically solving the time-dependent Schrödinger equation.It is found tha...We investigate high-order harmonic generation from atoms irradiated by bichromatic counter-rotating circularly polarized laser pulses by numerically solving the time-dependent Schrödinger equation.It is found that the minimum energy position of the harmonic spectrum and the non-integer order optical radiation are greatly discrepant for different atomic potentials.By analyzing the quantum trajectory of the harmonic emission,discrepancies among the harmonic spectra from different potentials can be attributed to the action of the potential on the ionized electrons.In addition,based on the influence of the driving light intensity on the overall intensity and ellipticity of higher order harmonics,the physical conditions for generating a high-intensity circularly polarized harmonic can be obtained.展开更多
文摘An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects （SCEs） and the drain induced barrier lowering （DIBL） more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLASTM 2D device simulator.
基金supported in part by the National Natural Science Foundation of China(61561039,61461044)the Natural Science Foundation of Ningxia(NZ14045)the Higher School Science and Technology Research Project of Ningxia(NGY2014051)
文摘The traditional geometrical depolarization model that single transmitter to single receiver provides a simple method of polarization channel modeling. It can obtain the geometrical depolarization effect of each path if known the antenna configuration, the polarization field radiation pattern and the spatial distribution of scatters. With the development of communication technology, information transmission spectrum is more and more scarce. The original model provides only a single channel polarization state, so the information will be limited that the polarization state carries in the polarization modulation. The research is so significance that how to carries polarization modulation information by using multi-antenna polarization state. However, the present study shows that have no depolarization effect model for multi-antenna systems. In this paper, we propose a multi-antenna geometrical depolarization model. On the basis of a single antenna to calculate the depolarization effect of the model, and through simulation to analysis the main factors that influence the depolarization effect. This article provides a multi-antenna geometrical depolarization channel modeling that can applied to large-scale array antenna, and to some extent increase the speed of information transmission.
文摘In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11605282,11505282 and U1532261the West Light Foundation of the Chinese Academy of Sciences under Grant No 2015-XBQN-B-15
文摘The bias dependence of radiation-induced narrow-width channel effects（RINCEs） in 65-nm n-type metal-oxidesemiconductor field-effect transistors（NMOSFETs） is investigated. The threshold voltage of the narrow-width65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.
基金Project supported by the Weapon Equipment Pre-Research Foundation of China(Grant No.9140A11020114ZK34147)the Shanghai Municipal Natural Science Foundation,China(Grant No.15ZR1447100)
文摘Total ionizing dose responses of different transistor geometries after being irradiated by ^（60）Co γ-rays, in 0.13-μm partially-depleted silicon-on-insulator（PD SOI） technology are investigated. The negative threshold voltage shift in an n-type metal-oxide semiconductor field effect transistor（nMOSFET） is inversely proportional to the channel width due to radiation-induced charges trapped in trench oxide, which is called the radiation-induced narrow channel effect（RINCE）.The analysis based on a charge sharing model and three-dimensional technology computer aided design（TCAD） simulations demonstrate that phenomenon. The radiation-induced leakage currents under different drain biases are also discussed in detail.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005)the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 200807010010)
文摘Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator （SGOI） MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects （SCE）, the drain-induced barrier-lowering （DIBL） and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005)Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083),Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 200807010010)
文摘Based on the exact resultant solution of two-dimensional Poisson＇s equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor （CMOS）-based device in a nanoscale regime.
基金Project supported by the Council of Scientific&Industrial Research(CSIR),Government of India under the SRF Scheme(Sanction Letter No:08/237(0005)/2012-EMR-I)
文摘We propose a scaling theory for single gate Al In Sb/In Sb high electron mobility transistors（HEMTs） by solving the two-dimensional（2D） Poisson equation. In our model, the effective conductive path effect（ECPE） is taken into account to overcome the problems arising from the device scaling. The potential in the effective conducting path is developed and a simple scaling equation is derived. This equation is solved to obtain the minimum channel potential Φdeff,minand the new scaling factor α to model the subthreshold behavior of the HEMTs. The developed model minimizes the leakage current and improves the subthreshold swing degradation of the HEMTs. The results of the analytical model are verified by numerical simulation with a Sentaurus TCAD device simulator.
基金Financial supports for this work provided by the National Basic Research Program of China(2013CB227900)the Innovation of Graduate Student Training Project in Jiangsu Province of China(CXZZ13_0934)
文摘In order to study the permeability and water-resisting ability of the strata on the top of the Ordovician in Longgu Coal Mine, this paper tested the permeability and porosity of the strata, investigated the fracture and pore structure features of the strata, and identified the main channels which govern the permeability and water-resisting ability of the strata. The permeability of the upper, central and lower strata shows as 2.0504 × 10^-3-2.782762× 10^-3, 4.1092 × 10^-3 -7.3387 × 10^-3 and 2.0891 ×10^-3-3.2705 × 10-3 μm^2, respectively, and porosity of that is 0.6786-0.9197%, 0.3109-0.3951% and 0.9829-1.8655%, respectively. The results indicate that： （I） the main channels of the relative water-resisting layer are the pore throats with a diameter more than 6 μm; （2） the major proportion of pore throats in the vertical flow channel and the permeability first increases and then sharply decreases; （3） the fractures occurring from the top to 20 m in depth of the strata were filled and there occurred almost no fracture under the depth of 40 m; and （4） the ratio of turning point of the main flow channel in the strata on top of Ordovician can be used to confirm the thickness of filled water-resisting lavers.
基金Project supported by the National Natural Science Foundation of China(Grant No.11405166)
文摘By performing a molecular dynamics simulation, fragmentation of Cu_n clusters scattering from a single-crystal Cu（111） surface is studied. The interactions among copper atoms are modeled by tight-binding potential, and the positions of the copper clusters at each time step are calculated by integrating the Newton equations of motion. The percentage of unfragmented clusters depends on the incident velocities, angles of incidence, and surface structure. The influence of surface structure on the fragment distribution is discussed, and the clusters appear to be more stable under an axial channeling condition. The fragment distribution shifting toward the small fragment range for cluster scattering along a random direction is confirmed, indicating that the cluster undergoes more intensive fragmentation.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.12074046 and 12074115)the Hunan Provincial Natural Science Foundation of China(Grant Nos.2020JJ4597,2021JJ40558,and 2021JJ30733)+1 种基金the Scientific Research Fund of Hunan Provincial Education Department,China(Grant Nos.20K007 and 20C0039)the Key Projects of Changsha Science and Technology Plan(Grant No.kq1901102).
文摘We preform a first-principles study of performance of 5 nm double-gated(DG)Schottky-barrier field effect transistors(SBFETs)based on two-dimensional SiC with monolayer or bilayer metallic 1T-phase MoS_(2) contacts.Because of the wide bandgap of SiC,the corresponding DG SBFETs can weaken the short channel effect.The calculated transfer characteristics also meet the standard of the high performance transistor summarized by international technology road-map for semiconductors.Moreover,the bilayer metallic 1T-phase MoS_(2) contacts in three stacking structures all can further raise the ON-state currents of DG SiC SBFETs in varying degrees.The above results are helpful and instructive for design of short channel transistors in the future.
文摘Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.
基金the National Key Research and Development Program of China(Grant Nos.2019YFA0307700 and 2017YFA0403300)the National Natural Science Foundation of China(Grant Nos.11627807,11774175,11534004,11774129,11975012,and 11604119)+1 种基金the Fundamental Research Funds for the Central Universities of China(Grant No.30916011207)the Jilin Provincial Research Foundation for Basic Research,China(Grant No.20170101153JC).
文摘We investigate high-order harmonic generation from atoms irradiated by bichromatic counter-rotating circularly polarized laser pulses by numerically solving the time-dependent Schrödinger equation.It is found that the minimum energy position of the harmonic spectrum and the non-integer order optical radiation are greatly discrepant for different atomic potentials.By analyzing the quantum trajectory of the harmonic emission,discrepancies among the harmonic spectra from different potentials can be attributed to the action of the potential on the ionized electrons.In addition,based on the influence of the driving light intensity on the overall intensity and ellipticity of higher order harmonics,the physical conditions for generating a high-intensity circularly polarized harmonic can be obtained.
