In order to inhibit hydrogen evolution and enhance current efficiency of Zn-Fe alloy electrodeposition from alkaline zincate solution, hydrogen inhibitors composed of the sulfur group elements were optimized on the ba...In order to inhibit hydrogen evolution and enhance current efficiency of Zn-Fe alloy electrodeposition from alkaline zincate solution, hydrogen inhibitors composed of the sulfur group elements were optimized on the basis of atom structures analysis. The effects of hydrogen inhibitor on the current efficiency of Zn-Fe alloy electroplating and their electrochemical behaviors were studied. The results indicate that hydrogen inhibitor can increase the current efficiency of Zn-Fe alloy electroplating evidently, from 63.28% without hydrogen inhibitor up to 83.54% with a hydrogen inhibitor at a volume fraction of 2.0%, while it has a minor influence on that of pure Zn plating, which maintains at 80%. The optimum volume fraction of hydrogen inhibitor is 2.0%.展开更多
The effect of hydrogen inhibitor on partial current densities ofZn, Fe and differential capacitance of electrode/electrolyte interface, and adsorbing type of hydrogen inhibitor were studied by the methods of electroch...The effect of hydrogen inhibitor on partial current densities ofZn, Fe and differential capacitance of electrode/electrolyte interface, and adsorbing type of hydrogen inhibitor were studied by the methods of electrochemistry. The mechanism of current efficiency improvement were explained from the point of valence electron theory. The results indicate that the partial current density of Fe increases in addition of hydrogen inhibitor, which reaches the maximum of 0.14 A/dm^2 when current density is 0.2 A/din〈 Differential capacitance of electrode/electrolyte interface decreases obviously from 20.3μF/cm^2 to 7 μF/cm^2 rapidly with the concentration varying from 0 to 20 mL/L, because hydrogen inhibitor chemically adsorbs on active points of Fe electrode surface selectively. Element S in hydrogen inhibitor with negative electricity and strong capacity of offering electron shares isolated electrons with Fe. The adsorption of H atom is inhibited when adsorbing on active points of Fe electrode surface firstly, and then current efficiency of Zn-Fe alloy electroplating is improved accordingly.展开更多
Compared to conventional quantum dot light-emitting diodes,tandem quantum dot light-emitting diodes(TQLEDs)possess higher device efficiency and more applications in the field of flat panel display and solid-state ligh...Compared to conventional quantum dot light-emitting diodes,tandem quantum dot light-emitting diodes(TQLEDs)possess higher device efficiency and more applications in the field of flat panel display and solid-state lighting in the future.The TQLED is a multilayer structure device which connects two or more light-emitting units by using an interconnection layer(ICL),which plays an extremely important role in the TQLED.Therefore,realizing an effective ICL is the key to obtain high-efficiency TQLEDs.In this work,the p-type materials polys(3,4-ethylenedioxythiophene),poly(styrenesulfonate)(PEDOT:PSS)and the n-type material zinc magnesium oxide(ZnMgO),were used,and an effective hybrid ICL,the PEDOT:PSS-GO/ZnMgO,was obtained by doping graphene oxide(GO)into PEDOT:PSS.The effect of GO additive on the ICL was systematically investigated.It exhibits that the GO additive brought the fine charge carrier generation and injection capacity simultaneously.Thus,the all solutionprocessed red TQLEDs were prepared and characterized for the first time.The maximum luminance of 40877 cd/m^(2) and the highest current efficiency of 19.6 cd/A were achieved,respectively,showing a 21%growth and a 51%increase when compared with those of the reference device without GO.The encouraging results suggest that our investigation paves the way for efficient all solution-processed TQLEDs.展开更多
基金Project(50274073) supported by the National Natural Science Foundation of China
文摘In order to inhibit hydrogen evolution and enhance current efficiency of Zn-Fe alloy electrodeposition from alkaline zincate solution, hydrogen inhibitors composed of the sulfur group elements were optimized on the basis of atom structures analysis. The effects of hydrogen inhibitor on the current efficiency of Zn-Fe alloy electroplating and their electrochemical behaviors were studied. The results indicate that hydrogen inhibitor can increase the current efficiency of Zn-Fe alloy electroplating evidently, from 63.28% without hydrogen inhibitor up to 83.54% with a hydrogen inhibitor at a volume fraction of 2.0%, while it has a minor influence on that of pure Zn plating, which maintains at 80%. The optimum volume fraction of hydrogen inhibitor is 2.0%.
基金Projects(50274073) supported by the National Natural Science Foundation of China
文摘The effect of hydrogen inhibitor on partial current densities ofZn, Fe and differential capacitance of electrode/electrolyte interface, and adsorbing type of hydrogen inhibitor were studied by the methods of electrochemistry. The mechanism of current efficiency improvement were explained from the point of valence electron theory. The results indicate that the partial current density of Fe increases in addition of hydrogen inhibitor, which reaches the maximum of 0.14 A/dm^2 when current density is 0.2 A/din〈 Differential capacitance of electrode/electrolyte interface decreases obviously from 20.3μF/cm^2 to 7 μF/cm^2 rapidly with the concentration varying from 0 to 20 mL/L, because hydrogen inhibitor chemically adsorbs on active points of Fe electrode surface selectively. Element S in hydrogen inhibitor with negative electricity and strong capacity of offering electron shares isolated electrons with Fe. The adsorption of H atom is inhibited when adsorbing on active points of Fe electrode surface firstly, and then current efficiency of Zn-Fe alloy electroplating is improved accordingly.
基金Project(11904298)supported by the National Natural Science Foundation of ChinaProject(cstc2020jcyj-msxm X0586)supported by Chongqing Natural Science Foundation,ChinaProject(S202010635001)supported by Chongqing Municipal Training Program of Innovation and Entrepreneurship for Undergraduates,China。
文摘Compared to conventional quantum dot light-emitting diodes,tandem quantum dot light-emitting diodes(TQLEDs)possess higher device efficiency and more applications in the field of flat panel display and solid-state lighting in the future.The TQLED is a multilayer structure device which connects two or more light-emitting units by using an interconnection layer(ICL),which plays an extremely important role in the TQLED.Therefore,realizing an effective ICL is the key to obtain high-efficiency TQLEDs.In this work,the p-type materials polys(3,4-ethylenedioxythiophene),poly(styrenesulfonate)(PEDOT:PSS)and the n-type material zinc magnesium oxide(ZnMgO),were used,and an effective hybrid ICL,the PEDOT:PSS-GO/ZnMgO,was obtained by doping graphene oxide(GO)into PEDOT:PSS.The effect of GO additive on the ICL was systematically investigated.It exhibits that the GO additive brought the fine charge carrier generation and injection capacity simultaneously.Thus,the all solutionprocessed red TQLEDs were prepared and characterized for the first time.The maximum luminance of 40877 cd/m^(2) and the highest current efficiency of 19.6 cd/A were achieved,respectively,showing a 21%growth and a 51%increase when compared with those of the reference device without GO.The encouraging results suggest that our investigation paves the way for efficient all solution-processed TQLEDs.
