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Input Admittance and Current Distribution of Infinitely Long Circular Cylindrical Antenna Driven at Center
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作者 Jinxion Chen & Guotai YinBeijing Institute of Radio Measurement, P.O.Box 3923, Beijing 100854, China 《Journal of Systems Engineering and Electronics》 SCIE EI CSCD 1991年第2期73-81,共9页
In this paper, by change of integration path in complex spectrum domain and by defining input admittance as the ratio of complex radiated power to amplitude of square of voltage across the gap, new expressions of admi... In this paper, by change of integration path in complex spectrum domain and by defining input admittance as the ratio of complex radiated power to amplitude of square of voltage across the gap, new expressions of admittance (valid for all frequencies ) of infinitely long cylindrical antenna with and without conducting ground are obtained. Meanwhile corresponding formulas of current distribution are derived in detail. Some numerical computations are also given. 展开更多
关键词 Input admittance current distribution Long cylindrical antenna.
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Effects of mask wall angle on matrix-hole shape changes during electrochemical machining by mask 被引量:8
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作者 李冬林 朱荻 +1 位作者 李寒松 刘金国 《Journal of Central South University》 SCIE EI CAS 2011年第4期1115-1120,共6页
The influences of the mask wall angle on the current density distribution,shape of the evolving cavity and machining accuracy were investigated in electrochemical machining(ECM) by mask.A mathematical model was develo... The influences of the mask wall angle on the current density distribution,shape of the evolving cavity and machining accuracy were investigated in electrochemical machining(ECM) by mask.A mathematical model was developed to predict the shape evolution during the ECM by mask.The current density distribution is sensitive to mask wall angle.The evolution of cavity is determined by the current density distribution of evolving workpiece surface.The maximum depth is away from the center of holes machined,which leads to the island appearing at the center of cavity for mask wall angles greater than or equal to 90°(β≥90°).The experimental system was established and the simulation results were experimentally verified.The results indicate that the simulation results of cavity shape are consistent with the actual ones.The experiments also show that the repetition accuracy of matrix-hole for β≥90° is higher than that for β<90°.A hole taper is diminished,and the machining accuracy is improved with the mask wall angle increasing. 展开更多
关键词 electrochemical machining matrix-hole machining accuracy current density distribution
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全绝缘自支撑电缆系统设计(英文) 被引量:1
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作者 George G.Karady Kumaraguru Prabakar 《高电压技术》 EI CAS CSCD 北大核心 2011年第11期2715-2720,共6页
All-dielectric self-supporting(ADSS) cables are installed along with transmission line for the purpose of communication.During installation the outer layer of the cable is hydrophobic and is not prone to dry band arci... All-dielectric self-supporting(ADSS) cables are installed along with transmission line for the purpose of communication.During installation the outer layer of the cable is hydrophobic and is not prone to dry band arcing. These cables become less hydrophobic over time and become vulnerable to dry band arcing.This loss in hydrophobicity is because of the contamination formed on the outer layer due to pollution.This is one of the reasons which cause cable failure.Considerable amount of losses will be incurred on the occurrence of a cable failure as the cables are also leased to other companies.An improved equivalent circuit is used to calculate the voltage and current distribution of the double circuit line.A three-phase single circuit line and a three-phase double circuit line are used to calculate their corresponding voltage distribution and current distribution.The results could be used to predict dry band arcing on similar models.The method used considers sag,span and pollution on ADSS cable. 展开更多
关键词 dry band arcing all-dielectric self-supporting cable fiber optic cable voltage distribution current distribution all-dielectric self-supporting circuit simulation
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