The geometric structure parameters and radial density distribution of 1s2s1S excited state of the two-electron atomic system near the critical nuclear charge Z_(c)were calculated in detail under tripled Hylleraas basi...The geometric structure parameters and radial density distribution of 1s2s1S excited state of the two-electron atomic system near the critical nuclear charge Z_(c)were calculated in detail under tripled Hylleraas basis set.Contrary to the localized behavior observed in the ground and the doubly excited 2p^(23)Pe states,for this state our results identify that while the behavior of the inner electron increasingly resembles that of a hydrogen-like atomic system,the outer electron in the excited state exhibits diffused hydrogen-like character and becomes perpendicular to the inner electron as nuclear charge Z approaches Z_(c).This study provides insights into the electronic structure and stability of the two-electron system in the vicinity of the critical nuclear charge.展开更多
We investigate the impact of heavy ion irradiation on a hypothetical static random access memory （SRAM） device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device stru...We investigate the impact of heavy ion irradiation on a hypothetical static random access memory （SRAM） device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indis- pensable effects on multiple-bit upsets （MBUs）, and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.12074295,12304271,and 12104420).
文摘The geometric structure parameters and radial density distribution of 1s2s1S excited state of the two-electron atomic system near the critical nuclear charge Z_(c)were calculated in detail under tripled Hylleraas basis set.Contrary to the localized behavior observed in the ground and the doubly excited 2p^(23)Pe states,for this state our results identify that while the behavior of the inner electron increasingly resembles that of a hydrogen-like atomic system,the outer electron in the excited state exhibits diffused hydrogen-like character and becomes perpendicular to the inner electron as nuclear charge Z approaches Z_(c).This study provides insights into the electronic structure and stability of the two-electron system in the vicinity of the critical nuclear charge.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 11179003, 10975164, 10805062, and 11005134)
文摘We investigate the impact of heavy ion irradiation on a hypothetical static random access memory （SRAM） device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indis- pensable effects on multiple-bit upsets （MBUs）, and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence.
