磁场是太阳物理的第1观测量,当前太阳磁场观测研究正迈向大视场、高时空分辨率、高偏振测量精度以及空间观测的时代.中国首颗太阳观测卫星-先进天基太阳天文台(ASO-S)也配置了具有高时空分辨率、高磁场灵敏度的全日面矢量磁像仪(FMG)载...磁场是太阳物理的第1观测量,当前太阳磁场观测研究正迈向大视场、高时空分辨率、高偏振测量精度以及空间观测的时代.中国首颗太阳观测卫星-先进天基太阳天文台(ASO-S)也配置了具有高时空分辨率、高磁场灵敏度的全日面矢量磁像仪(FMG)载荷,针对FMG载荷的需求,讨论了大面阵、高帧频互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)图像传感器应用于太阳磁场观测的可行性.首先,基于滤光器型太阳磁像仪观测的原理,比较分析了目前CMOS图像传感器(可用的或是可选的两种快门模式)的特点,指出全局快门类型更适合FMG;其次搭建了CMOS传感器实验室测试系统,测量了CMOS图像传感器的像素增益及其分布规律;最后在怀柔太阳观测基地的全日面太阳望远镜上开展了实测验证,获得预期成果.在这些研究基础上,形成了FMG载荷探测器选型方向.展开更多
Growing a silicon(Si) layer on top of stacked Si-germanium(Ge) compressive layer can introduce a tensile strain on the former, resulting in superior device characteristics. Such a structure can be used for high perfor...Growing a silicon(Si) layer on top of stacked Si-germanium(Ge) compressive layer can introduce a tensile strain on the former, resulting in superior device characteristics. Such a structure can be used for high performance complementary metal-oxide-semiconductor(CMOS) circuits. Down scaling metal-oxide-semiconductor field-effect transistors(MOSFETs) into the deep submicron/nanometer regime forces the source(S) and drain(D) series resistance to become comparable with the channel resistance and thus it cannot be neglected. Owing to the persisting technological importance of strained Si devices, in this work, we propose a multi-iterative technique for evaluating the performance of strained-Si/strained-Si_(1-y)Ge_y/relaxed-Si_(1-x)Ge_x MOSFETs and its related circuits in the presence of S/D series resistance, leading to the development of a simulator that can faithfully plot the performance of the device and related digital circuits. The impact of strain on device/circuit performance is also investigated with emphasis on metal gate and high-k dielectric materials.展开更多
文摘磁场是太阳物理的第1观测量,当前太阳磁场观测研究正迈向大视场、高时空分辨率、高偏振测量精度以及空间观测的时代.中国首颗太阳观测卫星-先进天基太阳天文台(ASO-S)也配置了具有高时空分辨率、高磁场灵敏度的全日面矢量磁像仪(FMG)载荷,针对FMG载荷的需求,讨论了大面阵、高帧频互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)图像传感器应用于太阳磁场观测的可行性.首先,基于滤光器型太阳磁像仪观测的原理,比较分析了目前CMOS图像传感器(可用的或是可选的两种快门模式)的特点,指出全局快门类型更适合FMG;其次搭建了CMOS传感器实验室测试系统,测量了CMOS图像传感器的像素增益及其分布规律;最后在怀柔太阳观测基地的全日面太阳望远镜上开展了实测验证,获得预期成果.在这些研究基础上,形成了FMG载荷探测器选型方向.
文摘Growing a silicon(Si) layer on top of stacked Si-germanium(Ge) compressive layer can introduce a tensile strain on the former, resulting in superior device characteristics. Such a structure can be used for high performance complementary metal-oxide-semiconductor(CMOS) circuits. Down scaling metal-oxide-semiconductor field-effect transistors(MOSFETs) into the deep submicron/nanometer regime forces the source(S) and drain(D) series resistance to become comparable with the channel resistance and thus it cannot be neglected. Owing to the persisting technological importance of strained Si devices, in this work, we propose a multi-iterative technique for evaluating the performance of strained-Si/strained-Si_(1-y)Ge_y/relaxed-Si_(1-x)Ge_x MOSFETs and its related circuits in the presence of S/D series resistance, leading to the development of a simulator that can faithfully plot the performance of the device and related digital circuits. The impact of strain on device/circuit performance is also investigated with emphasis on metal gate and high-k dielectric materials.
