针对智能车因单条引导线信息量少而引起的误识别问题,设计一种能自动识别和跟踪双边引导线的智能车系统。智能车以Freescale公司MC9S12XSl28作为核心控制器,利用COMS(Complementary Metal OxideSemiconductor)摄像头OV7620作为路径信息...针对智能车因单条引导线信息量少而引起的误识别问题,设计一种能自动识别和跟踪双边引导线的智能车系统。智能车以Freescale公司MC9S12XSl28作为核心控制器,利用COMS(Complementary Metal OxideSemiconductor)摄像头OV7620作为路径信息采集装置,对采集图像进行二值化处理、去噪操作和边缘检测后提取路径信息、进而准确地判别跑道的形状,为舵机和电机提供控制依据,以使小车平稳快速地行驶。同时,提出将行驶状态与赛道信息综合考虑的措施,并通过PID(Proportional Integral Differential)控制策略以及实验测试,实现了对各种典型跑道的优化处理,使高速行进中的智能车具有良好的转向调节能力和加减速响应能力。智能车可以在以白色为底面颜色,两边有黑色引导线的跑道上运行,克服了因单条引导线信息量少而引起的误识别问题。展开更多
Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology....Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.展开更多
基于0.18μm SOI CMOS工艺设计了一款用于数字相控阵雷达的宽带有源下混频器。该混频器集成了射频、本振放大器、Gilbert混频电路、中频放大器以及ESD保护电路。该芯片可以直接差分输出,亦可经过片外balun合成单端信号后输出。射频和本...基于0.18μm SOI CMOS工艺设计了一款用于数字相控阵雷达的宽带有源下混频器。该混频器集成了射频、本振放大器、Gilbert混频电路、中频放大器以及ESD保护电路。该芯片可以直接差分输出,亦可经过片外balun合成单端信号后输出。射频和本振端口VSWR的测试结果在0.7~4.0GHz范围内均小于2,IF端口的VSWR测试结果在25 MHz^1GHz范围内小于2。当差分输出时,该混频器的功率转换增益为10dB,1dB压缩点输出功率为3.3dBm。电源电压为2.5V,静态电流为64mA,芯片面积仅为1.0mm×0.9mm。展开更多
利用0.35μm工艺条件实现了性能优良的小尺寸全耗尽的器件硅绝缘体技术(SOI)互补金属氧化物半导体(FD SOI CMOS)器件,器件制作采用双多晶硅栅工艺、低掺杂浓度源/漏(LDD)结构以及突起的源漏区。这种结构的器件防止漏的击穿,减小短沟道效...利用0.35μm工艺条件实现了性能优良的小尺寸全耗尽的器件硅绝缘体技术(SOI)互补金属氧化物半导体(FD SOI CMOS)器件,器件制作采用双多晶硅栅工艺、低掺杂浓度源/漏(LDD)结构以及突起的源漏区。这种结构的器件防止漏的击穿,减小短沟道效应(SCE)和漏感应势垒降低效应(DIBL);突起的源漏区增加了源漏区的厚度并减小源漏区的串联电阻,增强了器件的电流驱动能力。设计了101级环形振荡器电路,并对该电路进行测试与分析。根据在3V工作电压下环形振荡器电路的振荡波形图,计算出其单级门延迟时间为45ps,远小于体硅CMOS的单级门延迟时间。展开更多
文摘针对智能车因单条引导线信息量少而引起的误识别问题,设计一种能自动识别和跟踪双边引导线的智能车系统。智能车以Freescale公司MC9S12XSl28作为核心控制器,利用COMS(Complementary Metal OxideSemiconductor)摄像头OV7620作为路径信息采集装置,对采集图像进行二值化处理、去噪操作和边缘检测后提取路径信息、进而准确地判别跑道的形状,为舵机和电机提供控制依据,以使小车平稳快速地行驶。同时,提出将行驶状态与赛道信息综合考虑的措施,并通过PID(Proportional Integral Differential)控制策略以及实验测试,实现了对各种典型跑道的优化处理,使高速行进中的智能车具有良好的转向调节能力和加减速响应能力。智能车可以在以白色为底面颜色,两边有黑色引导线的跑道上运行,克服了因单条引导线信息量少而引起的误识别问题。
基金Project supported the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.XBBS201316,2016-QNXZ-B-2,and 2016-QNXZ-B-8)Young Talent Training Project of Science and Technology,Xinjiang,China(Grant No.qn2015yx035)
文摘Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.
文摘基于0.18μm SOI CMOS工艺设计了一款用于数字相控阵雷达的宽带有源下混频器。该混频器集成了射频、本振放大器、Gilbert混频电路、中频放大器以及ESD保护电路。该芯片可以直接差分输出,亦可经过片外balun合成单端信号后输出。射频和本振端口VSWR的测试结果在0.7~4.0GHz范围内均小于2,IF端口的VSWR测试结果在25 MHz^1GHz范围内小于2。当差分输出时,该混频器的功率转换增益为10dB,1dB压缩点输出功率为3.3dBm。电源电压为2.5V,静态电流为64mA,芯片面积仅为1.0mm×0.9mm。
文摘利用0.35μm工艺条件实现了性能优良的小尺寸全耗尽的器件硅绝缘体技术(SOI)互补金属氧化物半导体(FD SOI CMOS)器件,器件制作采用双多晶硅栅工艺、低掺杂浓度源/漏(LDD)结构以及突起的源漏区。这种结构的器件防止漏的击穿,减小短沟道效应(SCE)和漏感应势垒降低效应(DIBL);突起的源漏区增加了源漏区的厚度并减小源漏区的串联电阻,增强了器件的电流驱动能力。设计了101级环形振荡器电路,并对该电路进行测试与分析。根据在3V工作电压下环形振荡器电路的振荡波形图,计算出其单级门延迟时间为45ps,远小于体硅CMOS的单级门延迟时间。
