The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribu...The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.展开更多
基于APD阵列的探测系统非常适合超高灵敏度、超高速探测,在主被动成像、激光雷达、医学检测、波前探测、光纤通信等领域应用广泛,时间数字转换器(Timeto Digital Converter,TDC)是其中的核心电路,完成对光子飞行时间(Time of Flight,ToF...基于APD阵列的探测系统非常适合超高灵敏度、超高速探测,在主被动成像、激光雷达、医学检测、波前探测、光纤通信等领域应用广泛,时间数字转换器(Timeto Digital Converter,TDC)是其中的核心电路,完成对光子飞行时间(Time of Flight,ToF)的高精度量化,对TDC电路的研究具有非常重要的军事和民用价值。本文首先介绍了TDC电路的原理与最简单的直接计数型结构,然后按三种典型结构分别综述了国内外适用于APD阵列的TDC电路的发展历程和最新成果,其中主要介绍了相位插值型TDC,最后比较了三种典型结构的特点,并总结了未来研究趋势。展开更多
基金Supported by Shanghai Natural Science Foundation(22ZR1472600).
文摘The development of InGaAs/InP single-photon avalanche photodiodes(SPADs)necessitates the utiliza-tion of a two-element diffusion technique to achieve accurate manipulation of the multiplication width and the dis-tribution of its electric field.Regarding the issue of accurately predicting the depth of diffusion in InGaAs/InP SPAD,simulation analysis and device development were carried out,focusing on the dual diffusion behavior of zinc atoms.A formula of X_(j)=k√t-t_(0)+c to quantitatively predict the diffusion depth is obtained by fitting the simulated twice-diffusion depths based on a two-dimensional(2D)model.The 2D impurity morphologies and the one-dimensional impurity profiles for the dual-diffused region are characterized by using scanning electron micros-copy and secondary ion mass spectrometry as a function of the diffusion depth,respectively.InGaAs/InP SPAD devices with different dual-diffusion conditions are also fabricated,which show breakdown behaviors well consis-tent with the simulated results under the same junction geometries.The dark count rate(DCR)of the device de-creased as the multiplication width increased,as indicated by the results.DCRs of 2×10^(6),1×10^(5),4×10^(4),and 2×10^(4) were achieved at temperatures of 300 K,273 K,263 K,and 253 K,respectively,with a bias voltage of 3 V,when the multiplication width was 1.5µm.These results demonstrate an effective prediction route for accu-rately controlling the dual-diffused zinc junction geometry in InP-based planar device processing.
文摘基于APD阵列的探测系统非常适合超高灵敏度、超高速探测,在主被动成像、激光雷达、医学检测、波前探测、光纤通信等领域应用广泛,时间数字转换器(Timeto Digital Converter,TDC)是其中的核心电路,完成对光子飞行时间(Time of Flight,ToF)的高精度量化,对TDC电路的研究具有非常重要的军事和民用价值。本文首先介绍了TDC电路的原理与最简单的直接计数型结构,然后按三种典型结构分别综述了国内外适用于APD阵列的TDC电路的发展历程和最新成果,其中主要介绍了相位插值型TDC,最后比较了三种典型结构的特点,并总结了未来研究趋势。
