With the development of anti-radiation weapons,the effectiveness evaluation of anti-radiation weapons has been turned from the simple accuracy index to the integrated countermeasure capability.The research priority is...With the development of anti-radiation weapons,the effectiveness evaluation of anti-radiation weapons has been turned from the simple accuracy index to the integrated countermeasure capability.The research priority is how to access the combat effectiveness of anti-radiation weapons in a complex countermeasure environment.For the present situation of range test of anti-radiation weapons,a combat effectiveness assessment model based on non-linear index aggregation is proposed for anti-radiation weapons.And the corresponding index system model,index aggregation methods,index marking method and index weight determination are given.Finally,the simulation results verify the efficiency and feasibility of the proposed method.展开更多
An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotio...An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 10^(11) cm^(-2),1× 10^(12) cm^(-2), and 5× 10^(12) cm^(-2). DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 10^(12) cm^(-2). Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.展开更多
We demonstrate the spectroscopic and laser performance before and after 100 Mrad gamma-ray irradiation on an Er,Pr：GYSGG crystal grown by the Czochralski method. The additional absorption of Er,Pr：GYSGG crystal is c...We demonstrate the spectroscopic and laser performance before and after 100 Mrad gamma-ray irradiation on an Er,Pr：GYSGG crystal grown by the Czochralski method. The additional absorption of Er,Pr：GYSGG crystal is close to zero in the 968 nm pumping and 2.7-3 μm laser wavelength regions. The lifetimes of the upper and lower levels show faint decreases after gamma-ray irradiation. The maximum output powers of 542 and 526 mW with the slope efficiencies of 17.7% and 17.0% are obtained, respectively, on the GYSGG/Er,Pr：GYSGG composite crystal before and after the gammaray irradiation. These results suggest that Er,Pr：GYSGG crystal as a laser gain medium possesses a distinguished antiradiation ability for application in space and radiant environments.展开更多
文摘With the development of anti-radiation weapons,the effectiveness evaluation of anti-radiation weapons has been turned from the simple accuracy index to the integrated countermeasure capability.The research priority is how to access the combat effectiveness of anti-radiation weapons in a complex countermeasure environment.For the present situation of range test of anti-radiation weapons,a combat effectiveness assessment model based on non-linear index aggregation is proposed for anti-radiation weapons.And the corresponding index system model,index aggregation methods,index marking method and index weight determination are given.Finally,the simulation results verify the efficiency and feasibility of the proposed method.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11775191,61404115,61434006,and 11475256)the Promotion Funding for Excellent Young Backbone Teacher of Henan Province,China(Grant No.2019GGJS017)。
文摘An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 10^(11) cm^(-2),1× 10^(12) cm^(-2), and 5× 10^(12) cm^(-2). DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 10^(12) cm^(-2). Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB1102301)the National Natural Science Foundation of China(Grant Nos.51272254,61405206,and 51502292)the Open Research Fund of the State Key Laboratory of Pulsed Power Laser Technology,Electronic Engineering Institute,China(Grant No.SKL2015KF01)
文摘We demonstrate the spectroscopic and laser performance before and after 100 Mrad gamma-ray irradiation on an Er,Pr：GYSGG crystal grown by the Czochralski method. The additional absorption of Er,Pr：GYSGG crystal is close to zero in the 968 nm pumping and 2.7-3 μm laser wavelength regions. The lifetimes of the upper and lower levels show faint decreases after gamma-ray irradiation. The maximum output powers of 542 and 526 mW with the slope efficiencies of 17.7% and 17.0% are obtained, respectively, on the GYSGG/Er,Pr：GYSGG composite crystal before and after the gammaray irradiation. These results suggest that Er,Pr：GYSGG crystal as a laser gain medium possesses a distinguished antiradiation ability for application in space and radiant environments.
