During the last four decades, reinforced-concrete structure failures have been happening widely for many reasons, such as increased service loads, war accidents, fire, and durability problems. The economic losses due ...During the last four decades, reinforced-concrete structure failures have been happening widely for many reasons, such as increased service loads, war accidents, fire, and durability problems. The economic losses due to those failures are very high. An expert system is an interactive computer-based decision tool that uses both facts and heuristics to solve difficult problems based on knowledge acquired from experts. To realize these requirements, a logic programming visual basic language is used together with visual diagnosis. The expert system, Diagnosis of Fire-Caused Damages to Reinforced-Concrete Tunnel Lining (DFCDRCTL) was developed in this work for diagnosing the annual damages caused by fire. The program is used as an alternative of a human expert to make annual technical decisions in diagnosing fire damages at the second reinforced-concrete tunnel lining segment. It is concluded that the proposed DFCDRCTL expert system is easy to use, and is fast and helpful for engineers.展开更多
Following tunnel excavation and lining completion,fractured surrounding rock deforms gradually over time;this results in a time-dependent evolution of the pressure applied to the lining structure by the surrounding ro...Following tunnel excavation and lining completion,fractured surrounding rock deforms gradually over time;this results in a time-dependent evolution of the pressure applied to the lining structure by the surrounding rock.Thus,the safety of the tunnel lining in weak strata is strongly correlated with time.In this study,we developed an analytical method for determining the time-dependent pressure in the surrounding rock and lining structure of a circular tunnel under a hydrostatic stress field.Under the proposed method,the stress–strain relationship of the fractured surrounding rock is assumed to conform to that of the Burgers viscoelastic component,and the lining structure is assumed to be an elastomer.Based on these assumptions,the viscoelastic deformation of the surrounding rock,the elastic deformation of the lining structure,and the coordinated deformation between the surrounding rock and lining structure were derived.The proposed analytical method,which employs a time-dependent safety coefficient,was subsequently used to estimate the durability of the lining structure of the Foling Tunnel in China.The derived attenuation curve of the safety coefficient with respect to time can assist engineers in predicting the remaining viable life of the lining structure.Unlike existing analytical methods,the method derived in this study considers the time dependency of the interaction between the surrounding rock and tunnel lining;hence,it is more suitable for the evaluation of lining lifetime.展开更多
The method to calculate rock pressure to which the lining structure of tunnel with shallow depth is subjected in geologically inclined bedding strata is analyzed and put forward. Both the inclination angle of bedding ...The method to calculate rock pressure to which the lining structure of tunnel with shallow depth is subjected in geologically inclined bedding strata is analyzed and put forward. Both the inclination angle of bedding strata as well as the internal friction angle of bedding plane and its cohesion all exert an influence upon the magnitude of the asymmetric rock pressure applied to tunnel. The feature that rock pressure applied to tunnel structure varies with the incUnation angle of bedding strata is discussed, At last, the safety factor, which is utilized to evaluate the working state of tunnel lining structure, is calculated for both symmetric and asymmetric lining structures. The calculation results elucidate that the asymmetric tunnel structure can be more superior to bear rock pressure in comparison with the symmetric one and should be adopted in engineering as far as possible.展开更多
A Si/Ge heterojunction line tunnel field-effect transistor （LTFET） with a symmetric heteromaterial gate is proposed. Compared to single-material-gate LTFETs, the heteromaterial gate LTFET shows an off-state leakage ...A Si/Ge heterojunction line tunnel field-effect transistor （LTFET） with a symmetric heteromaterial gate is proposed. Compared to single-material-gate LTFETs, the heteromaterial gate LTFET shows an off-state leakage current that is three orders of magnitude lower, and steeper subthreshold characteristics, without degradation in the on-state current. We reveal that these improvements are due to the induced local potential barrier, which arises from the energy-band profile modulation effect. Based on this novel structure, the impacts of the physical parameters of the gap region between the pocket and the drain, including the work-function mismatch between the pocket gate and the gap gate, the type of dopant, and the doping concentration, on the device performance are investigated. Simulation and theoretical calculation results indicate that the gap gate material and n-type doping level in the gap region should be optimized simultaneously to make this region fully depleted for further suppression of the off-state leakage current.展开更多
The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling technology. The line tunneling is created due to the fact that the gate electric field is aligned with the...The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling technology. The line tunneling is created due to the fact that the gate electric field is aligned with the tunneling direction, which dramatically enhances tunneling area and tunneling current. Moreover, the effects of the structure parameters such as the length between top gate and source electrode, the length between top gate and drain electrode, the distance between bottom gate and drain electrode, and the metal position on the on-state current, electric field and energy band are investigated and optimized. In addition, analog/radio-frequency performance and linearity characteristics are studied. All results demonstrate that the proposed device not only enhances the on/of current ratio and reduces the subthreshold swing, but also offers eight times improvement in cut-off frequency and gain band product as compared with the conventional point tunneling dopingless TFET, at the same time;it shows better linearity and small distortions. This proposed device greatly enhances the potential of applications in dopingless TFET.展开更多
Large threshold voltage and small on-state current are the main limitations of the normal tunneling field effect transistor (TFET). In this paper, a novel TFET with gate-controlled P+N+N+ structure based on partially ...Large threshold voltage and small on-state current are the main limitations of the normal tunneling field effect transistor (TFET). In this paper, a novel TFET with gate-controlled P+N+N+ structure based on partially depleted GeOI (PD-GeOI) substrate is proposed. With the buried P+-doped layer (BP layer) introduced under P+N+N+ structure, the proposed device behaves as a two-tunneling line device and can be shut off by the BP junction, resulting in a high on-state current and low threshold voltage. Simulation results show that the on-state current density Ion of the proposed TFET can be as large as 3.4 × 10^−4 A/μm, and the average subthreshold swing (SS) is 55 mV/decade. Moreover, both of Ion and SS can be optimized by lengthening channel and buried P+ layer. The off-state current density of TTP TFET is 4.4 × 10^−10 A/μm, and the threshold voltage is 0.13 V, showing better performance than normal germanium-based TFET. Furthermore, the physics and device design of this novel structure are explored in detail.展开更多
基金Funded by the National Natural Science Foundation of China under Grant No. 51278427the Program for New Century Excellent Talents in Universities under Grant No. 10-0667+1 种基金the National Natural Science Foundation of High Iron Mutual Funds (No. U1134208)the Fundamental Research Funds for the Central Universities (No. SWJTU11ZT33)
文摘During the last four decades, reinforced-concrete structure failures have been happening widely for many reasons, such as increased service loads, war accidents, fire, and durability problems. The economic losses due to those failures are very high. An expert system is an interactive computer-based decision tool that uses both facts and heuristics to solve difficult problems based on knowledge acquired from experts. To realize these requirements, a logic programming visual basic language is used together with visual diagnosis. The expert system, Diagnosis of Fire-Caused Damages to Reinforced-Concrete Tunnel Lining (DFCDRCTL) was developed in this work for diagnosing the annual damages caused by fire. The program is used as an alternative of a human expert to make annual technical decisions in diagnosing fire damages at the second reinforced-concrete tunnel lining segment. It is concluded that the proposed DFCDRCTL expert system is easy to use, and is fast and helpful for engineers.
基金supported by the National Natural Science Foundation of China(Nos.71631007 and 71771020)。
文摘Following tunnel excavation and lining completion,fractured surrounding rock deforms gradually over time;this results in a time-dependent evolution of the pressure applied to the lining structure by the surrounding rock.Thus,the safety of the tunnel lining in weak strata is strongly correlated with time.In this study,we developed an analytical method for determining the time-dependent pressure in the surrounding rock and lining structure of a circular tunnel under a hydrostatic stress field.Under the proposed method,the stress–strain relationship of the fractured surrounding rock is assumed to conform to that of the Burgers viscoelastic component,and the lining structure is assumed to be an elastomer.Based on these assumptions,the viscoelastic deformation of the surrounding rock,the elastic deformation of the lining structure,and the coordinated deformation between the surrounding rock and lining structure were derived.The proposed analytical method,which employs a time-dependent safety coefficient,was subsequently used to estimate the durability of the lining structure of the Foling Tunnel in China.The derived attenuation curve of the safety coefficient with respect to time can assist engineers in predicting the remaining viable life of the lining structure.Unlike existing analytical methods,the method derived in this study considers the time dependency of the interaction between the surrounding rock and tunnel lining;hence,it is more suitable for the evaluation of lining lifetime.
文摘The method to calculate rock pressure to which the lining structure of tunnel with shallow depth is subjected in geologically inclined bedding strata is analyzed and put forward. Both the inclination angle of bedding strata as well as the internal friction angle of bedding plane and its cohesion all exert an influence upon the magnitude of the asymmetric rock pressure applied to tunnel. The feature that rock pressure applied to tunnel structure varies with the incUnation angle of bedding strata is discussed, At last, the safety factor, which is utilized to evaluate the working state of tunnel lining structure, is calculated for both symmetric and asymmetric lining structures. The calculation results elucidate that the asymmetric tunnel structure can be more superior to bear rock pressure in comparison with the symmetric one and should be adopted in engineering as far as possible.
基金supported by the National Natural Science Foundation of China(Grant No.61306105)the National Science and Technology Major Project of China(Grant No.2011ZX02708-002)+1 种基金the Tsinghua University Initiative Scientific Research Programthe Tsinghua National Laboratory for Information Science and Technology(TNList)Cross-discipline Foundation of China
文摘A Si/Ge heterojunction line tunnel field-effect transistor （LTFET） with a symmetric heteromaterial gate is proposed. Compared to single-material-gate LTFETs, the heteromaterial gate LTFET shows an off-state leakage current that is three orders of magnitude lower, and steeper subthreshold characteristics, without degradation in the on-state current. We reveal that these improvements are due to the induced local potential barrier, which arises from the energy-band profile modulation effect. Based on this novel structure, the impacts of the physical parameters of the gap region between the pocket and the drain, including the work-function mismatch between the pocket gate and the gap gate, the type of dopant, and the doping concentration, on the device performance are investigated. Simulation and theoretical calculation results indicate that the gap gate material and n-type doping level in the gap region should be optimized simultaneously to make this region fully depleted for further suppression of the off-state leakage current.
基金Project supported by the Natural Science Research Key Project of Universities of Anhui Province,China(Grant No.KJ2017A502)the Introduced Talent Project of Anhui Science and Technology University,China(Grant No.DQYJ201603)the Excellent Talents Supported Project of Colleges and Universities,China(Grant No.gxyq2018048)。
文摘The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling technology. The line tunneling is created due to the fact that the gate electric field is aligned with the tunneling direction, which dramatically enhances tunneling area and tunneling current. Moreover, the effects of the structure parameters such as the length between top gate and source electrode, the length between top gate and drain electrode, the distance between bottom gate and drain electrode, and the metal position on the on-state current, electric field and energy band are investigated and optimized. In addition, analog/radio-frequency performance and linearity characteristics are studied. All results demonstrate that the proposed device not only enhances the on/of current ratio and reduces the subthreshold swing, but also offers eight times improvement in cut-off frequency and gain band product as compared with the conventional point tunneling dopingless TFET, at the same time;it shows better linearity and small distortions. This proposed device greatly enhances the potential of applications in dopingless TFET.
基金Project supported by the National Natural Science Foundation of China(Grant No.61704130)the Science Research Plan in Shaanxi Province,China(Grant No.2018JQ6064)the Science and Technology Project on Analog Integrated Circuit Laboratory,China(Grant No.JCKY2019210C029).
文摘Large threshold voltage and small on-state current are the main limitations of the normal tunneling field effect transistor (TFET). In this paper, a novel TFET with gate-controlled P+N+N+ structure based on partially depleted GeOI (PD-GeOI) substrate is proposed. With the buried P+-doped layer (BP layer) introduced under P+N+N+ structure, the proposed device behaves as a two-tunneling line device and can be shut off by the BP junction, resulting in a high on-state current and low threshold voltage. Simulation results show that the on-state current density Ion of the proposed TFET can be as large as 3.4 × 10^−4 A/μm, and the average subthreshold swing (SS) is 55 mV/decade. Moreover, both of Ion and SS can be optimized by lengthening channel and buried P+ layer. The off-state current density of TTP TFET is 4.4 × 10^−10 A/μm, and the threshold voltage is 0.13 V, showing better performance than normal germanium-based TFET. Furthermore, the physics and device design of this novel structure are explored in detail.
