The focus of this study is on investigating the vanadyl 2,9,16,23-tetraphenoxy-29H, 31H-phthalocyanine(VOPc Ph O)and its blend with o-xylenyl C60 bis-adduct(OXCBA), for use as a lateral ultraviolet organic photodetect...The focus of this study is on investigating the vanadyl 2,9,16,23-tetraphenoxy-29H, 31H-phthalocyanine(VOPc Ph O)and its blend with o-xylenyl C60 bis-adduct(OXCBA), for use as a lateral ultraviolet organic photodetector. The research focuses on improving dark current reduction, which is a challenge in lateral organic photodetector. By integrating the OXCBA, low dark current values of 4.83 nA·cm^(-2)(D_(shot)^(*)= 1.414 × 10^(11)Jones) have been achieved as compared to the stand-alone VoPcPhO device of 14.06 nA·cm^(-2). The major contributing factors to dark current reduction are due to the efficient charge transfer at the photoactive-electrode interface, the deep highest occupied molecular orbital(HOMO)level of OXCBA, which leads to favorable energy level alignments hindering hole injection, and the occurrence of bulk heterojunction vertical phase segregation between VOPcPhO and OXCBA. These findings shed light on the relationship between the organic photoconductor's material composition, morphology, and performance metrics and open new avenues for metal phthalocyanine-based lateral ultraviolet organic photodetectors with low dark current and enhanced performance.展开更多
The mechanism for electrical conduction is investigated by the dark temperature-dependent current–voltage characteristics of Si PIN photodiodes with different photosensitive areas.The characteristic tunneling energy ...The mechanism for electrical conduction is investigated by the dark temperature-dependent current–voltage characteristics of Si PIN photodiodes with different photosensitive areas.The characteristic tunneling energy E（00） can be obtained to be 1.40 me V,1.53 me V,1.74 me V,1.87 me V,and 2.01 me V,respectively,for the photodiodes with L = 0.25 mm,0.5 mm,1 mm,1.5 mm,and 2 mm by fitting the ideality factor n versus temperature curves according to the tunneling-enhanced recombination mechanism.The trap-assisted tunneling-enhanced recombination in the i-layer plays an important role in our device,which is consistent with the experimental result that area-dependent leakage current is dominant with the side length larger than 1 mm of the photosensitive area.Our results reveal that the quality of the bulk material plays an important role in the electrical conduction mechanism of the devices with the side length larger than 1 mm of the photosensitive area.展开更多
The TiO2 nanoporous film photoelectrode, as a crucial component of dye-sensitized solar cells, has been investigated. The photovoltaic properties and the dark current were studied by two surface modification methods. ...The TiO2 nanoporous film photoelectrode, as a crucial component of dye-sensitized solar cells, has been investigated. The photovoltaic properties and the dark current were studied by two surface modification methods. One was to apply a compact layer between the conductive glass substrate and nanoporous TiO2 film. Another was to produce TiO2 nanoparticles among the microstructure by TICl4 treatment. A suitable concentration and number of times for TICl4 treatment were found in our experiment. The dark current is suppressed by surface modifications, leading to a significant improvement in the solar cells performance. An excessive concentration of TICl4 will produce more surface states and introduce a larger dark current reversely. The dye is also regarded as a source of charge recombination in dark to some extent, due to an amount of surface protonations introduced by the interracial link in the conductive glass substrate/dye interface and dye/TiO2 interface.展开更多
The lattice-matched XBn structures of InAsSb,grown on GaSb substrates,exhibit high crystal quali⁃ty,and can achieve extremely low dark currents at high operating temperatures(HOT).Its superior performance is attribute...The lattice-matched XBn structures of InAsSb,grown on GaSb substrates,exhibit high crystal quali⁃ty,and can achieve extremely low dark currents at high operating temperatures(HOT).Its superior performance is attributed to the unipolar barrier,which blocks the majority carriers while allowing unhindered hole transport.To further explore the energy band and carrier transport mechanisms of the XBn unipolar barrier structure,this pa⁃per systematically investigates the influence of doping on the dark current,photocurrent,and tunneling character⁃istics of InAsSb photodetectors in the PBn structure.Three high-quality InAsSb samples with unintentionally doped absorption layers(AL)were prepared,with varying p-type doping concentrations in the GaSb contact layer(CL)and the AlAsSb barrier layer(BL).As the p-type doping concentration in the CL increased,the device’s turn-on bias voltage also increased,and p-type doping in the BL led to tunneling occurring at lower bias voltages.For the sample with UID BL,which exhibited an extremely low dark current of 5×10^(-6) A/cm^(2).The photocurrent characteristics were well-fitted using the back-to-back diode model,revealing the presence of two opposing space charge regions on either side of the BL.展开更多
Herein we propose a new equivalent circuit including double heterojunctions in series to simulate the current–voltage characteristic of P–I–N planar structure perovskite solar cells. This new method can theoretical...Herein we propose a new equivalent circuit including double heterojunctions in series to simulate the current–voltage characteristic of P–I–N planar structure perovskite solar cells. This new method can theoretically solve the dilemma of the parameter diode ideal factor being larger than2 from an ideal single heterojunction equivalent circuit,which usually is in the range from 1 to 2. The diode ideal factor reflects PN junction quality, which influences the recombination at electron transport layer/perovskite and perovskite/hole transport layer interface. Based on the double PN junction equivalent circuit, we can also simulate the dark current–voltage curve for analyzing recombination current(Shockley–Read–Hall recombination) and diffusion current(including direct recombination), and thus carrier recombination and transportation characteristics. This new model offers an efficacious and simple method to investigate interfaces condition, film quality of perovskite absorbing layer and performance of transport layer, helping us furtherimprove the device efficiency and analyze the working mechanism.展开更多
One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can tra...One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can transport freely driven by an external electric field,which usually produces large dark current and low detectivity.Here,an UV photodetector built from three cross-intersecting ZnO microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer techniques.Compared with the reference device without interface,the dark current of this ZnO double-interface photodetector is significantly reduced by nearly 5 orders of magnitude,while the responsivity decreases slightly,thereby greatly improving the normalized photocurrent-to-dark current ratio.In addition,ZnO double-interface photodetector exhibits a much faster response speed(~0.65 s)than the no-interface device(~95 s).The improved performance is attributed to the potential barriers at the microwire-microwire homo-interfaces,which can regulate the carrier transport.Our findings in this work provide a promising approach for the design and development of high-performance photodetectors.展开更多
暗电流作为光电探测器的固有噪声,是影响双光束分光光度计检测性能的重要因素。为消除此影响,提出自适应滤波双光束分光光度计。首先,设计实时暗电流检测系统,能在每个检测周期内捕获样品信号、参考信号和暗电流信号。其次,针对时域差...暗电流作为光电探测器的固有噪声,是影响双光束分光光度计检测性能的重要因素。为消除此影响,提出自适应滤波双光束分光光度计。首先,设计实时暗电流检测系统,能在每个检测周期内捕获样品信号、参考信号和暗电流信号。其次,针对时域差异引起的暗电流消除问题,引入自适应级联滤波算法(Recursive Least Squares and Normalized Least Mean Squares,RLS-NLMS),算法采用三级级联滤波模型,一级局部均值(Local Mean,LM)降低暗电流与检测信号之间的相关性,二级低阶RLS滤波器用于检测信号滤波,三级高阶NLMS滤波器用于处理RLS输出信号。实验结果显示,自适应滤波双光束分光光度计的透射比相对误差仅为1.46%,较传统方法降低了66%,在暗电流消除方面表现出色,具有实际应用价值。展开更多
基金financial support from the Ministry of Science,Technology and Innovation with Grant No. MOSTI004-2023SRF。
文摘The focus of this study is on investigating the vanadyl 2,9,16,23-tetraphenoxy-29H, 31H-phthalocyanine(VOPc Ph O)and its blend with o-xylenyl C60 bis-adduct(OXCBA), for use as a lateral ultraviolet organic photodetector. The research focuses on improving dark current reduction, which is a challenge in lateral organic photodetector. By integrating the OXCBA, low dark current values of 4.83 nA·cm^(-2)(D_(shot)^(*)= 1.414 × 10^(11)Jones) have been achieved as compared to the stand-alone VoPcPhO device of 14.06 nA·cm^(-2). The major contributing factors to dark current reduction are due to the efficient charge transfer at the photoactive-electrode interface, the deep highest occupied molecular orbital(HOMO)level of OXCBA, which leads to favorable energy level alignments hindering hole injection, and the occurrence of bulk heterojunction vertical phase segregation between VOPcPhO and OXCBA. These findings shed light on the relationship between the organic photoconductor's material composition, morphology, and performance metrics and open new avenues for metal phthalocyanine-based lateral ultraviolet organic photodetectors with low dark current and enhanced performance.
基金Project supported by the National Key Research and Development Program of China(Grant No.2017YFF0104801)the National Natural Science Foundation of China(Grant Nos.61335004,61675046,and 61505003)
文摘The mechanism for electrical conduction is investigated by the dark temperature-dependent current–voltage characteristics of Si PIN photodiodes with different photosensitive areas.The characteristic tunneling energy E（00） can be obtained to be 1.40 me V,1.53 me V,1.74 me V,1.87 me V,and 2.01 me V,respectively,for the photodiodes with L = 0.25 mm,0.5 mm,1 mm,1.5 mm,and 2 mm by fitting the ideality factor n versus temperature curves according to the tunneling-enhanced recombination mechanism.The trap-assisted tunneling-enhanced recombination in the i-layer plays an important role in our device,which is consistent with the experimental result that area-dependent leakage current is dominant with the side length larger than 1 mm of the photosensitive area.Our results reveal that the quality of the bulk material plays an important role in the electrical conduction mechanism of the devices with the side length larger than 1 mm of the photosensitive area.
基金supported by National Basic Research Program of China （No. 2006CB202600） the Natural Science Foundation of Nantong University （No. 06Z120）+1 种基金 the Fund for High Technology Research of Jiangsu Province （No. BG2005022） ＂The Six Top Talents Project＂ of Jiangsu
文摘The TiO2 nanoporous film photoelectrode, as a crucial component of dye-sensitized solar cells, has been investigated. The photovoltaic properties and the dark current were studied by two surface modification methods. One was to apply a compact layer between the conductive glass substrate and nanoporous TiO2 film. Another was to produce TiO2 nanoparticles among the microstructure by TICl4 treatment. A suitable concentration and number of times for TICl4 treatment were found in our experiment. The dark current is suppressed by surface modifications, leading to a significant improvement in the solar cells performance. An excessive concentration of TICl4 will produce more surface states and introduce a larger dark current reversely. The dye is also regarded as a source of charge recombination in dark to some extent, due to an amount of surface protonations introduced by the interracial link in the conductive glass substrate/dye interface and dye/TiO2 interface.
基金Supported by the Candidate Talents Training Fund of Yunnan Province(202205AC160054)the National Natural Science Foundation of China(62174156)。
文摘The lattice-matched XBn structures of InAsSb,grown on GaSb substrates,exhibit high crystal quali⁃ty,and can achieve extremely low dark currents at high operating temperatures(HOT).Its superior performance is attributed to the unipolar barrier,which blocks the majority carriers while allowing unhindered hole transport.To further explore the energy band and carrier transport mechanisms of the XBn unipolar barrier structure,this pa⁃per systematically investigates the influence of doping on the dark current,photocurrent,and tunneling character⁃istics of InAsSb photodetectors in the PBn structure.Three high-quality InAsSb samples with unintentionally doped absorption layers(AL)were prepared,with varying p-type doping concentrations in the GaSb contact layer(CL)and the AlAsSb barrier layer(BL).As the p-type doping concentration in the CL increased,the device’s turn-on bias voltage also increased,and p-type doping in the BL led to tunneling occurring at lower bias voltages.For the sample with UID BL,which exhibited an extremely low dark current of 5×10^(-6) A/cm^(2).The photocurrent characteristics were well-fitted using the back-to-back diode model,revealing the presence of two opposing space charge regions on either side of the BL.
基金the 973 Program of China(No.2014CB643506 and 2013CB922104)the China Scholarship Council(No.201506165038)+3 种基金the Natural Science Foundation of China(No.21673091)the Natural Science Foundation of Hubei Province(No.ZRZ2015000203)Technology Creative Project of Excellent Middle and Young Team of Hubei Province(No.T201511)the Wuhan National High Magnetic Field Center(2015KF18)is acknowledged
文摘Herein we propose a new equivalent circuit including double heterojunctions in series to simulate the current–voltage characteristic of P–I–N planar structure perovskite solar cells. This new method can theoretically solve the dilemma of the parameter diode ideal factor being larger than2 from an ideal single heterojunction equivalent circuit,which usually is in the range from 1 to 2. The diode ideal factor reflects PN junction quality, which influences the recombination at electron transport layer/perovskite and perovskite/hole transport layer interface. Based on the double PN junction equivalent circuit, we can also simulate the dark current–voltage curve for analyzing recombination current(Shockley–Read–Hall recombination) and diffusion current(including direct recombination), and thus carrier recombination and transportation characteristics. This new model offers an efficacious and simple method to investigate interfaces condition, film quality of perovskite absorbing layer and performance of transport layer, helping us furtherimprove the device efficiency and analyze the working mechanism.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62074148,61875194,11727902,12074372,11774341,11974344,61975204,and 11804335)the National Ten Thousand Talent Program for Young Topnotch Talents,the Key Research and Development Program of Changchun City(Grant No.21ZY05)+2 种基金the 100 Talents Program of the Chinese Academy of Sciences,Youth Innovation Promotion Association,CAS(Grant No.2020225)Jilin Province Science Fund(Grant No.20210101145JC)XuGuang Talents Plan of CIOMP。
文摘One-dimensional(1D)micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors.However,in the axial direction of micro/nanowires,the carriers can transport freely driven by an external electric field,which usually produces large dark current and low detectivity.Here,an UV photodetector built from three cross-intersecting ZnO microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer techniques.Compared with the reference device without interface,the dark current of this ZnO double-interface photodetector is significantly reduced by nearly 5 orders of magnitude,while the responsivity decreases slightly,thereby greatly improving the normalized photocurrent-to-dark current ratio.In addition,ZnO double-interface photodetector exhibits a much faster response speed(~0.65 s)than the no-interface device(~95 s).The improved performance is attributed to the potential barriers at the microwire-microwire homo-interfaces,which can regulate the carrier transport.Our findings in this work provide a promising approach for the design and development of high-performance photodetectors.
文摘暗电流作为光电探测器的固有噪声,是影响双光束分光光度计检测性能的重要因素。为消除此影响,提出自适应滤波双光束分光光度计。首先,设计实时暗电流检测系统,能在每个检测周期内捕获样品信号、参考信号和暗电流信号。其次,针对时域差异引起的暗电流消除问题,引入自适应级联滤波算法(Recursive Least Squares and Normalized Least Mean Squares,RLS-NLMS),算法采用三级级联滤波模型,一级局部均值(Local Mean,LM)降低暗电流与检测信号之间的相关性,二级低阶RLS滤波器用于检测信号滤波,三级高阶NLMS滤波器用于处理RLS输出信号。实验结果显示,自适应滤波双光束分光光度计的透射比相对误差仅为1.46%,较传统方法降低了66%,在暗电流消除方面表现出色,具有实际应用价值。
