Aluminium composites are inevitable in ship building,commercial and defence aircrafts construction due to their light weight,high strength to weight ratio,admirable properties and cost affordability.In this study,the ...Aluminium composites are inevitable in ship building,commercial and defence aircrafts construction due to their light weight,high strength to weight ratio,admirable properties and cost affordability.In this study,the microstructural characteristics of explosive cladded dissimilar grade aluminium(Al 1100-Al 5052) clad composites reinforced with silicon carbide(SiC) particles is presented.Microstructure taken at the interface by optical and scanning electron microscopes(SEM) revealed the formation of a silicon carbide layer between the dissimilar grade aluminium sheets.Though reaction layers were witnessed at few locations along the interface,the diffusion of atoms between the participant metals is not visible as confirmed by energy dispersive spectroscopy,elemental mapping,line analysis and X-ray diffraction(XRD).The variation in microhardness at various regions of the silicon carbide reinforced dissimilar aluminium explosive clad is reported.The increase in tensile strength of the SiC laced clad is also presented.展开更多
Aluminium composites are inevitable in the manufacture of aircraft structural elements owing to less weight,superior corrosion resistance and higher specific properties.These composites reduce the weight of the aircra...Aluminium composites are inevitable in the manufacture of aircraft structural elements owing to less weight,superior corrosion resistance and higher specific properties.These composites reduce the weight of the aircraft,improve the fuel efficiency and enhance the maintenance duration.This study proposes the development of dissimilar grade aluminium(aluminium 1100-aluminium 5052)composites with different reinforcement’s viz.,stainless steel wire-mesh,silicon carbide(SiC)powders and SiC powder interspersed wire-mesh,by explosive cladding technique.Wire-mesh enhances the friction and restricts the movement of flyer plate to craft a defect free clad,while SiC particles form a band on the interface.Highest strength is obtained when SiC powder interspersed wire mesh is employed as reinforcement.The dissimilar aluminium explosive clad with SiC particle reinforcement results in lower strength,which is higher than that of the weaker parent alloy and that of the conventional dissimilar aluminium explosive clads without any reinforcement.展开更多
Silicon carbide (SiC) ceramics is a good structural ceramics material, which have a lot of excellent properties such as superior high-temperature strength up to a temperature of 1 350 ℃, chemical stability, good resi...Silicon carbide (SiC) ceramics is a good structural ceramics material, which have a lot of excellent properties such as superior high-temperature strength up to a temperature of 1 350 ℃, chemical stability, good resistance to thermal shock and high abrasion resistance. The silicon carbide ceramics material has so far been used widely for manufacturing various components such as heat exchangers, rolls, rockets combustion chamber. Sintering of ceramics structural parts have many technological method, the reaction-bonded is one of important sintering technology of ceramics structural parts. The preparation of reaction-bonded silicon carbide (RBSC) is based on a reaction sintering process, whereby a compacted body of α-SiC and carbon (graphite) powders is heated in contact with liquid silicon or gas silicon, which impregnates the body, converting the carbon (graphite) to β-SiC which bonds the original alpha grain. This process is characterized by low temperature and a short time sintering, and being appropriate to the preparation of large size and complex-shaped components, and so on. Besides, during compacting process of reaction sintering, it can maintain a stable dimension of ceramics parts. Therefore, the method of reaction-bonded silicon carbide ceramics has been identified as a technology suitable for producing complicated and highly exact dimensions’ ceramics parts. In this paper, the method of reaction-bonded silicon carbide was applied to the manufacturing of a complex-shaped spacecraft combustion chamber of SiC ceramics. SiC and carbon powder of 4～30 μm were chosen as the raw materials, green compacts containing appropriate wt.% carbon were formed using the mold press method, sintering was performed in a graphite electric furnace under an argon atmosphere. It was introduced in detail that the technological parameters and technological flow of reaction sintering silicon carbide ceramics. At the same time, physical and mechanical experiments such as bending strength, coefficient of thermal expansion, coefficient of thermal conductivity, gastight property, heat resisting property etc. have been carried out. The results demonstrated that spacecraft combustion chamber made from reaction sintering of silicon carbide ceramics is feasible and the results of experiment is satisfactory. The strength of high-temperature structural parts made by reaction sintered SiC varied with silicon content; Under the this article testing condition, the optimum silicon content is 10.5% for the part investigated. The method of reaction sintered SiC ceramics is suitable for manufacturing of complicated spacecraft parts with a working temperature of 1 500 ℃.展开更多
Porous silicon carbide ceramics were prepared by combustion synthesis technique. SiC/TiC composite was gained by combustion reaction of Si, C and Ti. Thermodynamics analysis of Si-C-Ti system indicates that the conten...Porous silicon carbide ceramics were prepared by combustion synthesis technique. SiC/TiC composite was gained by combustion reaction of Si, C and Ti. Thermodynamics analysis of Si-C-Ti system indicates that the content of TiC in products should be larger than 30%. The experimental results show that the content of Ti+C should be larger than 25% to achieve a complete combustion reaction. The X-ray diffractometry results show that the final products with a relative density of 45%64% are composed of α-SiC, β-SiC, TiC and a small quantity of Si. The images of scanning electron microscopy show that the structures of grain in SiC based porous ceramics consist of particles with a few microns in size.展开更多
The electronic packaging shell with high silicon carbide aluminum-base composites was prepared by semi-solid thixoforming technique. The flow characteristic of the Si C particulate was analyzed. The microstructures of...The electronic packaging shell with high silicon carbide aluminum-base composites was prepared by semi-solid thixoforming technique. The flow characteristic of the Si C particulate was analyzed. The microstructures of different parts of the shell were observed by scanning electron microscopy and optical microscopy, and the thermophysical and mechanical properties of the shell were tested. The results show that there exists the segregation phenomenon between the Si C particulate and the liquid phase during thixoforming, the liquid phase flows from the shell, and the Si C particles accumulate at the bottom of the shell. The volume fraction of Si C decreases gradually from the bottom to the walls. Accordingly, the thermal conductivities of bottom center and walls are 178 and 164 W·m-1·K-1, the coefficients of thermal expansion(CTE) are 8.2×10-6 and 12.6×10-6 K-1, respectively. The flexural strength decreases slightly from 437 to 347 MPa. The microstructures and properties of the shell show gradient distribution.展开更多
Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive en...Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive environments.Consequently,components like crucibles,susceptors and wafer carriers require carbon-based materials such as graphite and carbon-carbon composites.However,traditional carbon materials underperform in these extreme conditions,failing to effectively address the challenges.This leads to issues including product contamination and shortened equipment lifespan.Therefore,effective protection of carbon materials is crucial.This paper reviews current research status on the preparation methods and properties of corrosion-resistant coatings within relevant domestic and international fields.Preparation methods include various techniques such as physical vapor deposition(PVD),chemical vapor deposition(CVD)and the sol-gel method.Furthermore,it offers perspectives on future research directions for corrosion-resistant coated components in semiconductor equipment.These include exploring novel coating materials,improving coating preparation processes,enhancing coating corrosion resistance,as well as further investigating the interfacial interactions between coatings and carbon substrates to achieve better adhesion and compatibility.展开更多
During the operation of electronic devices,a considerable amount of heat and electromagnetic radiation is emitted.Therefore,the investigation of materials with electromagnetic shielding and thermal management abilitie...During the operation of electronic devices,a considerable amount of heat and electromagnetic radiation is emitted.Therefore,the investigation of materials with electromagnetic shielding and thermal management abilities has significant importance.Hybrid materials of three-dimensional graphene networks containing both carbon nanotubes(CNTs)and SiC whiskers(3D graphene-CNT-SiC)were synthesized.Using an aqueous-phase reduction method for the self-assembly of the graphene oxide,a three-dimen-sional porous graphene structure was fabricated.SiC whiskers,inserted between the graphene layers,formed a framework for longit-udinal thermal conduction,while CNTs attached to the SiC surface,created a dendritic structure that increased the bonding between the SiC whiskers and graphene,improving dielectric loss and thermal conductivity.It was found that the thermal conductivity of the hybrid material reached 123 W·m^(-1)·K^(-1),with a shielding effectiveness of 29.3 dB when the SiC addition was 2%.This result indic-ates that 3D graphene-CNT-SiC has excellent thermal conductivity and electromagnetic shielding performance.展开更多
Developing lightweight and flexible thin films for electromagnetic interference(EMI)shielding is of great importance.Porous thin films of reduced graphene oxide containing SiC whiskers(SiC@RGO)for EMI shielding were p...Developing lightweight and flexible thin films for electromagnetic interference(EMI)shielding is of great importance.Porous thin films of reduced graphene oxide containing SiC whiskers(SiC@RGO)for EMI shielding were prepared by a two-step reduction of graphene oxide(GO),in which the two steps were chemical reduction by HI and the solid phase microwave irradiation.A significant increase of the film thickness from around 20 to 200μm was achieved due to the formation of a porous structure by gases released during the 3 s of solid phase microwave irradiation.The total shielding effectiveness(SET)and the reflective SE(SE_(R))of the SiC@RGO porous thin films depended on the GO/SiC mass ratio.The highest SET achieved was 35.6 dB while the SE_(R) was only 2.8 dB,when the GO/SiC mass ratio was 4∶1.The addition of SiC whiskers was critical for the multi-reflection,interfacial po-larization and dielectric attenuation of EM waves.A multilayer film with a gradient change of SE values was constructed using SiC@RGO porous films and multi-walled carbon nanotubes buckypapers.The highest SET of the multilayer films reached 75.1 dB with a SE_(R) of 2.7 dB for a film thickness of about 1.5 mm.These porous SiC@RGO thin films should find use in multilayer or sand-wich structures for EMI absorption in packaging or lining.展开更多
Photoconductive semiconductor switch(PCSS)can be applied in pulsed high power systems and microwave techniques.However,reducing the damage and increasing the lifetime of silicon carbide(SiC)PCSS are still faced severe...Photoconductive semiconductor switch(PCSS)can be applied in pulsed high power systems and microwave techniques.However,reducing the damage and increasing the lifetime of silicon carbide(SiC)PCSS are still faced severe challenges.In this study,PCSSs with various structures were prepared on 4-inch diameter,500μm thick high-purity semi-insulating 4H-SiC substrates and their on-state resistance and damage mechanisms were investigated.It was found that the PCSS of an Au/TiW/Ni electrode system annealed at 950℃had a minimum on-state resistance of 6.0Ωat 1 kV bias voltage with a 532 nm and 170 mJ pulsed laser by backside illumination single trigger.The backside illumination single trigger could reduce on-state resistance and alleviate the damage of PCSS compared to the frontside trigger when the diameter of the laser spot was larger than the channel length of PCSS.For the 200 s trigger test by a 10 Hz laser,the black branch-like ablation on Au/TiW/Ni PCSS was mainly caused by thermal stress owing to hot carriers.Replacing metal Ni with boron gallium co-doped zinc oxide(BGZO)thin films annealed at 400℃,black branch-like ablation was alleviated while concentric arc damage was obvious at the anode.The major causes of concentric arc are both pulsed laser diffraction and thermal effect.展开更多
Chemical vapor deposition(CVD) of SiC from methyltrichlorosilane(MTS) was studied at two different molar ratios of H2 to MTS(n(H2) /n(MTS) ) . The total pressure was kept as 100 kPa and the temperature was varied from...Chemical vapor deposition(CVD) of SiC from methyltrichlorosilane(MTS) was studied at two different molar ratios of H2 to MTS(n(H2) /n(MTS) ) . The total pressure was kept as 100 kPa and the temperature was varied from 850 to 1 100 ℃ at a total residence time of 1 s. Steady-state deposition rates as functions of reactor length and of temperature,investigated at different n(H2) /n(MTS) values,show that hydrogen exhibits strongly influences on the deposition rate. Especially,the deposition of Si co-deposit can be obtained in broader substrate length and at higher temperatures with increasing hydrogen partial pressure. Influence of hydrogen on the deposition process was also studied using gas phase composition and deposit composition analysis at various n(H2) /n(MTS) . SEM micrographs directly show the variation of surface morphologies at various n(H2) /n(MTS) . It can be found that the crystal grain of the deposit at 1 100 ℃ is better developed and the crystallization is also improved with increasing n(H2) /n(MTS) .展开更多
The development of China’s space industry puts forward urgent requirements for high-performance debris shielding materials and high energy density rechargeable battery.In this review,the recent progress on debris shi...The development of China’s space industry puts forward urgent requirements for high-performance debris shielding materials and high energy density rechargeable battery.In this review,the recent progress on debris shielding fibrous materials and high energy density Li-S battery are particularly summarized.According to the experimental results,basalt fibers and silicon carbide fibers were chosen as the effective filling shielding materials.The geometric structure of fabrics was also investigated.For the novel shielding materials,high-strength and flexible silicon carbide micro-nano fibrous membranes were designed and fabricated.The obtained membranes with excellent mechanical properties portend the potential applications in debris protection structure.Furthermore,the high specific energy lithium sulfur batteries have made remarkable progress in fundamental research and application research in recent years.In order to solve the key problems of polysulfides shuttle and slow redox kinetics in lithium sulfur battery,a series of transition metal compound@hollow carbon-based material as sulfur host with dual functions of catalysis and adsorption towards polysulfides were designed and constructed.The obtained Li-S pouch cells with high areal sulfur loading of 6.9 mg·cm^(-2)yield exceptional high practical energy density of 382 W·h·kg^(-1)under lean electrolyte of 3.5μL·mg^(-1),demonstrating the great potential of realistic high-energy Li-S batteries.展开更多
In the modern society,there is a strong demand for semiconductor chips,and the 4H polytype silicon carbide(4H-SiC)power device is a promising candidate for the next generation semiconductor chip,which can be used in v...In the modern society,there is a strong demand for semiconductor chips,and the 4H polytype silicon carbide(4H-SiC)power device is a promising candidate for the next generation semiconductor chip,which can be used in various power electronic systems.In order to improve the performance of the 4H-SiC power device,a novel ultrahigh-voltage(UHV)4H-SiC merged p-type/intrinsic/n-type(PiN)Schottky(MPS)diode with three-dimensional(3D)p-type buried layers(PBL)(3D-PBL MPS)is proposed and investigated by numerical simulation.The static forward conduction characteristics of the 3D-PBL MPS are similar to those of the conventional 4H-SiC MPS diode without the PBL(PBL-free MPS).However,when the 3D-PBL MPS is in the reverse blocking state,the 3D PBL can transfer the peak electric field(E_(peak))into a deeper position in the body of the epitaxial layer,and enhance the ability of the device to shield the high electric field at the Schottky contact interface(E_(S)),so that the reverse leakage current of the 3D-PBL MPS at 10 kV is only 0.002%of that of the PBL-free MPS.Meanwhile,the novel 3D-PBL MPS has overcome the disadvantage in the 4H-SiC MPS diode with the two-dimensional PBL(2D-PBL MPS),and the forward conduction characteristic of the 3D-PBL MPS will not get degenerated after the device converts from the reverse blocking state to the forward conduction state because of the special depletion layer variation mechanism depending on the 3D PBL.All the simulation results show that the novel UHV 3D-PBL MPS has excellent device performance.展开更多
文摘Aluminium composites are inevitable in ship building,commercial and defence aircrafts construction due to their light weight,high strength to weight ratio,admirable properties and cost affordability.In this study,the microstructural characteristics of explosive cladded dissimilar grade aluminium(Al 1100-Al 5052) clad composites reinforced with silicon carbide(SiC) particles is presented.Microstructure taken at the interface by optical and scanning electron microscopes(SEM) revealed the formation of a silicon carbide layer between the dissimilar grade aluminium sheets.Though reaction layers were witnessed at few locations along the interface,the diffusion of atoms between the participant metals is not visible as confirmed by energy dispersive spectroscopy,elemental mapping,line analysis and X-ray diffraction(XRD).The variation in microhardness at various regions of the silicon carbide reinforced dissimilar aluminium explosive clad is reported.The increase in tensile strength of the SiC laced clad is also presented.
文摘Aluminium composites are inevitable in the manufacture of aircraft structural elements owing to less weight,superior corrosion resistance and higher specific properties.These composites reduce the weight of the aircraft,improve the fuel efficiency and enhance the maintenance duration.This study proposes the development of dissimilar grade aluminium(aluminium 1100-aluminium 5052)composites with different reinforcement’s viz.,stainless steel wire-mesh,silicon carbide(SiC)powders and SiC powder interspersed wire-mesh,by explosive cladding technique.Wire-mesh enhances the friction and restricts the movement of flyer plate to craft a defect free clad,while SiC particles form a band on the interface.Highest strength is obtained when SiC powder interspersed wire mesh is employed as reinforcement.The dissimilar aluminium explosive clad with SiC particle reinforcement results in lower strength,which is higher than that of the weaker parent alloy and that of the conventional dissimilar aluminium explosive clads without any reinforcement.
文摘Silicon carbide (SiC) ceramics is a good structural ceramics material, which have a lot of excellent properties such as superior high-temperature strength up to a temperature of 1 350 ℃, chemical stability, good resistance to thermal shock and high abrasion resistance. The silicon carbide ceramics material has so far been used widely for manufacturing various components such as heat exchangers, rolls, rockets combustion chamber. Sintering of ceramics structural parts have many technological method, the reaction-bonded is one of important sintering technology of ceramics structural parts. The preparation of reaction-bonded silicon carbide (RBSC) is based on a reaction sintering process, whereby a compacted body of α-SiC and carbon (graphite) powders is heated in contact with liquid silicon or gas silicon, which impregnates the body, converting the carbon (graphite) to β-SiC which bonds the original alpha grain. This process is characterized by low temperature and a short time sintering, and being appropriate to the preparation of large size and complex-shaped components, and so on. Besides, during compacting process of reaction sintering, it can maintain a stable dimension of ceramics parts. Therefore, the method of reaction-bonded silicon carbide ceramics has been identified as a technology suitable for producing complicated and highly exact dimensions’ ceramics parts. In this paper, the method of reaction-bonded silicon carbide was applied to the manufacturing of a complex-shaped spacecraft combustion chamber of SiC ceramics. SiC and carbon powder of 4～30 μm were chosen as the raw materials, green compacts containing appropriate wt.% carbon were formed using the mold press method, sintering was performed in a graphite electric furnace under an argon atmosphere. It was introduced in detail that the technological parameters and technological flow of reaction sintering silicon carbide ceramics. At the same time, physical and mechanical experiments such as bending strength, coefficient of thermal expansion, coefficient of thermal conductivity, gastight property, heat resisting property etc. have been carried out. The results demonstrated that spacecraft combustion chamber made from reaction sintering of silicon carbide ceramics is feasible and the results of experiment is satisfactory. The strength of high-temperature structural parts made by reaction sintered SiC varied with silicon content; Under the this article testing condition, the optimum silicon content is 10.5% for the part investigated. The method of reaction sintered SiC ceramics is suitable for manufacturing of complicated spacecraft parts with a working temperature of 1 500 ℃.
基金Project(90205034) supported by National Natural Science Foundation of China
文摘Porous silicon carbide ceramics were prepared by combustion synthesis technique. SiC/TiC composite was gained by combustion reaction of Si, C and Ti. Thermodynamics analysis of Si-C-Ti system indicates that the content of TiC in products should be larger than 30%. The experimental results show that the content of Ti+C should be larger than 25% to achieve a complete combustion reaction. The X-ray diffractometry results show that the final products with a relative density of 45%64% are composed of α-SiC, β-SiC, TiC and a small quantity of Si. The images of scanning electron microscopy show that the structures of grain in SiC based porous ceramics consist of particles with a few microns in size.
文摘The electronic packaging shell with high silicon carbide aluminum-base composites was prepared by semi-solid thixoforming technique. The flow characteristic of the Si C particulate was analyzed. The microstructures of different parts of the shell were observed by scanning electron microscopy and optical microscopy, and the thermophysical and mechanical properties of the shell were tested. The results show that there exists the segregation phenomenon between the Si C particulate and the liquid phase during thixoforming, the liquid phase flows from the shell, and the Si C particles accumulate at the bottom of the shell. The volume fraction of Si C decreases gradually from the bottom to the walls. Accordingly, the thermal conductivities of bottom center and walls are 178 and 164 W·m-1·K-1, the coefficients of thermal expansion(CTE) are 8.2×10-6 and 12.6×10-6 K-1, respectively. The flexural strength decreases slightly from 437 to 347 MPa. The microstructures and properties of the shell show gradient distribution.
基金National Natural Science Foundation of China(12002196,12102140)。
文摘Semiconductors and related fields today hold vast application prospects.The semiconductor wafer fabrication process involves steps such as substrate preparation and epitaxy,which occur in high-temperature corrosive environments.Consequently,components like crucibles,susceptors and wafer carriers require carbon-based materials such as graphite and carbon-carbon composites.However,traditional carbon materials underperform in these extreme conditions,failing to effectively address the challenges.This leads to issues including product contamination and shortened equipment lifespan.Therefore,effective protection of carbon materials is crucial.This paper reviews current research status on the preparation methods and properties of corrosion-resistant coatings within relevant domestic and international fields.Preparation methods include various techniques such as physical vapor deposition(PVD),chemical vapor deposition(CVD)and the sol-gel method.Furthermore,it offers perspectives on future research directions for corrosion-resistant coated components in semiconductor equipment.These include exploring novel coating materials,improving coating preparation processes,enhancing coating corrosion resistance,as well as further investigating the interfacial interactions between coatings and carbon substrates to achieve better adhesion and compatibility.
文摘During the operation of electronic devices,a considerable amount of heat and electromagnetic radiation is emitted.Therefore,the investigation of materials with electromagnetic shielding and thermal management abilities has significant importance.Hybrid materials of three-dimensional graphene networks containing both carbon nanotubes(CNTs)and SiC whiskers(3D graphene-CNT-SiC)were synthesized.Using an aqueous-phase reduction method for the self-assembly of the graphene oxide,a three-dimen-sional porous graphene structure was fabricated.SiC whiskers,inserted between the graphene layers,formed a framework for longit-udinal thermal conduction,while CNTs attached to the SiC surface,created a dendritic structure that increased the bonding between the SiC whiskers and graphene,improving dielectric loss and thermal conductivity.It was found that the thermal conductivity of the hybrid material reached 123 W·m^(-1)·K^(-1),with a shielding effectiveness of 29.3 dB when the SiC addition was 2%.This result indic-ates that 3D graphene-CNT-SiC has excellent thermal conductivity and electromagnetic shielding performance.
文摘Developing lightweight and flexible thin films for electromagnetic interference(EMI)shielding is of great importance.Porous thin films of reduced graphene oxide containing SiC whiskers(SiC@RGO)for EMI shielding were prepared by a two-step reduction of graphene oxide(GO),in which the two steps were chemical reduction by HI and the solid phase microwave irradiation.A significant increase of the film thickness from around 20 to 200μm was achieved due to the formation of a porous structure by gases released during the 3 s of solid phase microwave irradiation.The total shielding effectiveness(SET)and the reflective SE(SE_(R))of the SiC@RGO porous thin films depended on the GO/SiC mass ratio.The highest SET achieved was 35.6 dB while the SE_(R) was only 2.8 dB,when the GO/SiC mass ratio was 4∶1.The addition of SiC whiskers was critical for the multi-reflection,interfacial po-larization and dielectric attenuation of EM waves.A multilayer film with a gradient change of SE values was constructed using SiC@RGO porous films and multi-walled carbon nanotubes buckypapers.The highest SET of the multilayer films reached 75.1 dB with a SE_(R) of 2.7 dB for a film thickness of about 1.5 mm.These porous SiC@RGO thin films should find use in multilayer or sand-wich structures for EMI absorption in packaging or lining.
基金National Key R&D Program of China(2021YFA0716304)Shanghai Science and Technology Programs(22511100300,23DZ2201500)。
文摘Photoconductive semiconductor switch(PCSS)can be applied in pulsed high power systems and microwave techniques.However,reducing the damage and increasing the lifetime of silicon carbide(SiC)PCSS are still faced severe challenges.In this study,PCSSs with various structures were prepared on 4-inch diameter,500μm thick high-purity semi-insulating 4H-SiC substrates and their on-state resistance and damage mechanisms were investigated.It was found that the PCSS of an Au/TiW/Ni electrode system annealed at 950℃had a minimum on-state resistance of 6.0Ωat 1 kV bias voltage with a 532 nm and 170 mJ pulsed laser by backside illumination single trigger.The backside illumination single trigger could reduce on-state resistance and alleviate the damage of PCSS compared to the frontside trigger when the diameter of the laser spot was larger than the channel length of PCSS.For the 200 s trigger test by a 10 Hz laser,the black branch-like ablation on Au/TiW/Ni PCSS was mainly caused by thermal stress owing to hot carriers.Replacing metal Ni with boron gallium co-doped zinc oxide(BGZO)thin films annealed at 400℃,black branch-like ablation was alleviated while concentric arc damage was obvious at the anode.The major causes of concentric arc are both pulsed laser diffraction and thermal effect.
基金Project supported by the One Hundred Talents Program of Chinese Academy of Sciences
文摘Chemical vapor deposition(CVD) of SiC from methyltrichlorosilane(MTS) was studied at two different molar ratios of H2 to MTS(n(H2) /n(MTS) ) . The total pressure was kept as 100 kPa and the temperature was varied from 850 to 1 100 ℃ at a total residence time of 1 s. Steady-state deposition rates as functions of reactor length and of temperature,investigated at different n(H2) /n(MTS) values,show that hydrogen exhibits strongly influences on the deposition rate. Especially,the deposition of Si co-deposit can be obtained in broader substrate length and at higher temperatures with increasing hydrogen partial pressure. Influence of hydrogen on the deposition process was also studied using gas phase composition and deposit composition analysis at various n(H2) /n(MTS) . SEM micrographs directly show the variation of surface morphologies at various n(H2) /n(MTS) . It can be found that the crystal grain of the deposit at 1 100 ℃ is better developed and the crystallization is also improved with increasing n(H2) /n(MTS) .
基金Supported by the National Natural Science Foundation of China(52002400)Young Elite Scientists Sponsorship Program by CAST(YESS20200093)。
文摘The development of China’s space industry puts forward urgent requirements for high-performance debris shielding materials and high energy density rechargeable battery.In this review,the recent progress on debris shielding fibrous materials and high energy density Li-S battery are particularly summarized.According to the experimental results,basalt fibers and silicon carbide fibers were chosen as the effective filling shielding materials.The geometric structure of fabrics was also investigated.For the novel shielding materials,high-strength and flexible silicon carbide micro-nano fibrous membranes were designed and fabricated.The obtained membranes with excellent mechanical properties portend the potential applications in debris protection structure.Furthermore,the high specific energy lithium sulfur batteries have made remarkable progress in fundamental research and application research in recent years.In order to solve the key problems of polysulfides shuttle and slow redox kinetics in lithium sulfur battery,a series of transition metal compound@hollow carbon-based material as sulfur host with dual functions of catalysis and adsorption towards polysulfides were designed and constructed.The obtained Li-S pouch cells with high areal sulfur loading of 6.9 mg·cm^(-2)yield exceptional high practical energy density of 382 W·h·kg^(-1)under lean electrolyte of 3.5μL·mg^(-1),demonstrating the great potential of realistic high-energy Li-S batteries.
基金Project(F2020210016) supported by the Natural Science Foundation of Hebei,ChinaProject(620004153) supported by the National Natural Science Foundation of China。
文摘In the modern society,there is a strong demand for semiconductor chips,and the 4H polytype silicon carbide(4H-SiC)power device is a promising candidate for the next generation semiconductor chip,which can be used in various power electronic systems.In order to improve the performance of the 4H-SiC power device,a novel ultrahigh-voltage(UHV)4H-SiC merged p-type/intrinsic/n-type(PiN)Schottky(MPS)diode with three-dimensional(3D)p-type buried layers(PBL)(3D-PBL MPS)is proposed and investigated by numerical simulation.The static forward conduction characteristics of the 3D-PBL MPS are similar to those of the conventional 4H-SiC MPS diode without the PBL(PBL-free MPS).However,when the 3D-PBL MPS is in the reverse blocking state,the 3D PBL can transfer the peak electric field(E_(peak))into a deeper position in the body of the epitaxial layer,and enhance the ability of the device to shield the high electric field at the Schottky contact interface(E_(S)),so that the reverse leakage current of the 3D-PBL MPS at 10 kV is only 0.002%of that of the PBL-free MPS.Meanwhile,the novel 3D-PBL MPS has overcome the disadvantage in the 4H-SiC MPS diode with the two-dimensional PBL(2D-PBL MPS),and the forward conduction characteristic of the 3D-PBL MPS will not get degenerated after the device converts from the reverse blocking state to the forward conduction state because of the special depletion layer variation mechanism depending on the 3D PBL.All the simulation results show that the novel UHV 3D-PBL MPS has excellent device performance.
