Parkinson's disease(PD)is one of the most common neurodegenerative diseases.The loss of dopaminergic(DAergic)neurons in the substantia nigra and the decrease of dopamine(DA)levels accelerate the process of PD.L-Er...Parkinson's disease(PD)is one of the most common neurodegenerative diseases.The loss of dopaminergic(DAergic)neurons in the substantia nigra and the decrease of dopamine(DA)levels accelerate the process of PD.L-Ergothioneine(EGT)is a natural antioxidant derived from microorganisms,especially in edible mushrooms.EGT can penetrate blood-brain barrier and its levels are significantly decreased in the plasma of PD patients.Therefore,we speculated that EGT could ameliorate PD,and determined its effect on PD development by using 1-methyl-4-phenyl-1,2,3,6-tetrahydropyridine(MPTP)-induced PD mouse models and neurotoxin 1-methyl-4-phenylpyridinium(MPP^(+))-induced cell models.Our results show that EGT alleviated MPTP-induced behavioral dysfunction in mice.Mechanistically,we innovatively revealed that EGT was a key regulator of DJ-1.EGT restored DA levels by activating the DJ-1-nuclear receptor-related factor 1(Nurr1)axis.Furthermore,it reduced reactive oxygen species(ROS)levels by regulating the DJ-1-nuclear factor erythroid 2-related factor 2(Nrf2)pathway,which inhibited oxidative stress-induced DAergic neuronal apoptosis.Combined treatment with DJ-1-si RNA transfection revealed that blocking DJ-1 reversed EGT upregulated Nurr1 and Nrf2 expression in the nucleus,which significantly decreased the benefits of EGT.Taken together,our study suggests that EGT can ameliorate PD and be considered as a strategy for PD treatment.展开更多
β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其...β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。展开更多
基金supported by the National Natural Science Foundation of China(U22A20272,82173807,82170497)。
文摘Parkinson's disease(PD)is one of the most common neurodegenerative diseases.The loss of dopaminergic(DAergic)neurons in the substantia nigra and the decrease of dopamine(DA)levels accelerate the process of PD.L-Ergothioneine(EGT)is a natural antioxidant derived from microorganisms,especially in edible mushrooms.EGT can penetrate blood-brain barrier and its levels are significantly decreased in the plasma of PD patients.Therefore,we speculated that EGT could ameliorate PD,and determined its effect on PD development by using 1-methyl-4-phenyl-1,2,3,6-tetrahydropyridine(MPTP)-induced PD mouse models and neurotoxin 1-methyl-4-phenylpyridinium(MPP^(+))-induced cell models.Our results show that EGT alleviated MPTP-induced behavioral dysfunction in mice.Mechanistically,we innovatively revealed that EGT was a key regulator of DJ-1.EGT restored DA levels by activating the DJ-1-nuclear receptor-related factor 1(Nurr1)axis.Furthermore,it reduced reactive oxygen species(ROS)levels by regulating the DJ-1-nuclear factor erythroid 2-related factor 2(Nrf2)pathway,which inhibited oxidative stress-induced DAergic neuronal apoptosis.Combined treatment with DJ-1-si RNA transfection revealed that blocking DJ-1 reversed EGT upregulated Nurr1 and Nrf2 expression in the nucleus,which significantly decreased the benefits of EGT.Taken together,our study suggests that EGT can ameliorate PD and be considered as a strategy for PD treatment.
文摘β-Ga_(2)O_(3)是一种具有超宽带隙、高临界击穿场强和优异的巴利加优值的半导体材料,近年来在电力电子与深紫外光电探测等领域展现出巨大的应用潜力。金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术凭借其高生长速率、精确的膜厚控制、优异的薄膜质量和大尺寸生长等优势,成为未来β-Ga_(2)O_(3)走向产业化的潜在方法,并已被广泛应用于β-Ga_(2)O_(3)的外延生长研究。本文对几种常见晶向的β-Ga_(2)O_(3) MOCVD同质外延生长的研究成果进行了概述,并在此基础上介绍了极具潜力的β-(Al_(x)Ga_(1-x))_(2)O_(3)的MOCVD外延生长研究现状。最后,总结了基于MOCVD技术的β-Ga_(2)O_(3)同质外延生长以及β-(Al_(x)Ga_(1-x))_(2)O_(3)生长过程中面临的主要问题,并对未来的发展进行了展望。
