The development of passive NO_(x)adsorbers with cost-benefit and high NO_(x)storage capacity remains an on-going challenge to after-treatment technologies at lower temperatures associated with cold-start NO_(x)emissio...The development of passive NO_(x)adsorbers with cost-benefit and high NO_(x)storage capacity remains an on-going challenge to after-treatment technologies at lower temperatures associated with cold-start NO_(x)emissions.Herein,Cs_(1)Mg_(3)Al catalyst prepared by sol-gel method was cyclic tested in NO_(x)storage under 5 vol%water.At 100°C,the NO_(x)storage capacity(1219 μmol g^(-1))was much higher than that of Pt/BaO/Al_(2)O_(3)(610 μmol g^(-1)).This provided new insights for non-noble metal catalysts in low-temperature passive NO_(x)adsorption.The addition of Cs improved the mobility of oxygen species and thus improved the NO_(x)storage capacity.The XRD,XPS,IR spectra and in situ DRIFTs with NH3 probe showed an interaction between CsO_(x)and AlO_(x)sites via oxygen species formed on Cs_(1)Mg_(3)Al catalyst.The improved mobility of oxygen species inferred from O2-TPD was consistent with high NO_(x)storage capacity related to enhanced formation of nitrate and additional nitrite species by NO_(x)oxidation.Moreover,the addition of Mg might improve the stability of Cs_(1)Mg_(3)Al by stabilizing surface active oxygen species in cyclic experiments.展开更多
We construct a one-dimensional quasiperiodic quantum walk to investigate the localization–delocalization transition.The inverse participation ratio and Lyapunov exponent are employed as two indexes to determine the m...We construct a one-dimensional quasiperiodic quantum walk to investigate the localization–delocalization transition.The inverse participation ratio and Lyapunov exponent are employed as two indexes to determine the mobility edge, a critical energy to distinguish the energy regions of extended and localized states. The analytical solution of mobility edge is obtained by the Lyapunov exponents in global theory, and the consistency of the two indexes is confirmed. We further study the dynamic characteristics of the quantum walk and show that the probabilities are localized to some specific lattice sites with time evolution. This phenomenon is explained by the effective potential of the Hamiltonian which corresponds to the phase in the coin operator of the quantum walk.展开更多
Human mobility prediction is important for many applications.However,training an accurate mobility prediction model requires a large scale of human trajectories,where privacy issues become an important problem.The ris...Human mobility prediction is important for many applications.However,training an accurate mobility prediction model requires a large scale of human trajectories,where privacy issues become an important problem.The rising federated learning provides us with a promising solution to this problem,which enables mobile devices to collaboratively learn a shared prediction model while keeping all the training data on the device,decoupling the ability to do machine learning from the need to store the data in the cloud.However,existing federated learningbased methods either do not provide privacy guarantees or have vulnerability in terms of privacy leakage.In this paper,we combine the techniques of data perturbation and model perturbation mechanisms and propose a privacy-preserving mobility prediction algorithm,where we add noise to the transmitted model and the raw data collaboratively to protect user privacy and keep the mobility prediction performance.Extensive experimental results show that our proposed method significantly outperforms the existing stateof-the-art mobility prediction method in terms of defensive performance against practical attacks while having comparable mobility prediction performance,demonstrating its effectiveness.展开更多
In indoor environments,various batterypowered Internet of Things(IoT)devices,such as remote controllers and electronic tags on high-level shelves,require efficient energy management.However,manually monitoring remaini...In indoor environments,various batterypowered Internet of Things(IoT)devices,such as remote controllers and electronic tags on high-level shelves,require efficient energy management.However,manually monitoring remaining energy levels and battery replacement is both inadequate and costly.This paper introduces an energy management system for indoor IoT,which includes a mobile energy station(ES)for enabling on-demand wireless energy transfer(WET)in radio frequency(RF),some energy receivers(ERs),and a cloud server.By implementing a two-stage positioning system and embedding energy receivers into traditional IoT devices,we robustly manage their energy storage.The experimental results demonstrate that the energy receiver can harvest a minimum power of 58 mW.展开更多
The fifth generation(5G) network is expected to support significantly large amount of mobile data traffic and huge number of wireless connections,to achieve better spectrum- and energy-efficiency,as well as quality of...The fifth generation(5G) network is expected to support significantly large amount of mobile data traffic and huge number of wireless connections,to achieve better spectrum- and energy-efficiency,as well as quality of service(QoS) in terms of delay,reliability and security.Furthermore,the 5G network shall also incorporate high mobility requirements as an integral part,providing satisfactory service to users travelling at a speed up to 500 km/h.This paper provides a survey of potential high mobility wireless communication(HMWC) techniques for 5G network.After discussing the typical requirements and challenges of HMWC,key techniques to cope with the challenges are reviewed,including transmission techniques under the fast timevarying channels,network architecture with mobility support,and mobility management.Finally,future research directions on 5G high mobility communications are given.展开更多
The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heat...The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the A1GaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger A1GaN/GaN HEMT with 400μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged A1GaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip- level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.展开更多
A simple negative ion mobility spectrometer （IMS） is designed and used to investi- gate the factors that influence the number and efficiency of electrons generated by the needle-ring pulsed corona discharge electron...A simple negative ion mobility spectrometer （IMS） is designed and used to investi- gate the factors that influence the number and efficiency of electrons generated by the needle-ring pulsed corona discharge electron source. Simulation with Ansoft Maxwell 12 is carried out to analyze the electric field distribution within the IMS, and to offer the basis and foundation for analyzing the measurement results. The measurement results of the quantities of electrons show that when the drift electric field strength and the ring inner diameter rise, both the number of ef- fective electrons and the effective electron rate are increased. When the discharge voltage becomes stronger, the number of effective electrons goes up while the effective electron rate goes down. In light of the simulation results, mechanisms underlying the effects of drift electric field strength, ring inner diameter, and discharge voltage on the effective electron number and effective electron rate are discussed. These will make great sense for designing negative ion mode IMS using the needle-ring pulsed corona discharge as the electron source.展开更多
In this paper, we study the dynamical behaviour of an epidemic on complex networks with population mobility. In our model, the number of people on each node is unrestricted as the nodes of the network are considered a...In this paper, we study the dynamical behaviour of an epidemic on complex networks with population mobility. In our model, the number of people on each node is unrestricted as the nodes of the network are considered as cities, communities, and so on. Because people can travel between different cities, we study the effect of a population＇s mobility on the epidemic spreading. In view of the population＇s mobility, we suppose that the susceptible individual can be infected by an infected individual in the same city or other connected cities. Simulations are presented to verify our analysis.展开更多
Poly(methyl methacrylate)(PMMA) is widely used for graphene transfer and device fabrication.However,it inevitably leaves a thin layer of polymer residues after acetone rinsing and leads to dramatic degradation of devi...Poly(methyl methacrylate)(PMMA) is widely used for graphene transfer and device fabrication.However,it inevitably leaves a thin layer of polymer residues after acetone rinsing and leads to dramatic degradation of device performance.How to eliminate contamination and restore clean surfaces of graphene is still highly demanded.In this paper,we present a reliable and position-controllable method to remove the polymer residues on graphene films by laser exposure.Under proper laser conditions,PMMA residues can be substantially reduced without introducing defects to the underlying graphene.Furthermore,by applying this laser cleaning technique to the channel and contacts of graphene fieldeffect transistors(GFETs),higher carrier mobility as well as lower contact resistance can be realized.This work opens a way for probing intrinsic properties of contaminant-free graphene and fabricating high-performance GFETs with both clean channel and intimate graphene/metal contact.展开更多
Searching for two-dimensional（2 D） stable materials with direct band gap and high carrier mobility has attracted great attention for their electronic device applications.Using the first principles calculations and p...Searching for two-dimensional（2 D） stable materials with direct band gap and high carrier mobility has attracted great attention for their electronic device applications.Using the first principles calculations and particle swarm optimization（PSO） method,we predict a new 2 D stable material（HfNZ monolayer） with the global minimum of 2 D space.The HfNZ monolayer possesses direct band gap（～1.46 eV） and it is predicted to have high carrier mobilities(～103 cm2·V-1·s-1)from deformation potential theory.The direct band gap can be well maintained and flexibly modulated by applying an easily external strain under the strain conditions.In addition,the newly predicted HfN2 monolayer possesses good thermal,dynamical,and mechanical stabilities,which are verified by ab initio molecular dynamics simulations,phonon dispersion and elastic constants.These results demonstrate that HfN2 monolayer is a promising candidate in future microelectronic devices.展开更多
High mobility group box 1 protein （HMGB1） is a highly conserved, ubiquitous protein in the nuclei and cytoplasm of nearly all cell types. HMGB1 is secreted into the extracellular milieu and acts as a proinflammatory...High mobility group box 1 protein （HMGB1） is a highly conserved, ubiquitous protein in the nuclei and cytoplasm of nearly all cell types. HMGB1 is secreted into the extracellular milieu and acts as a proinflammatory cytokine. In this article we reviewed briefly the cellular immune response mediated by HMGB1 in inflammation and sepsis. This systemic review is mainly based on our own work and other related reports HMGB1 can actively affect the immune functions of many types of cells including T lymphocytes, regulatory T cells （Tregs）, dendritic cells （DCs）, macrophages, and natural killer cells （NK cells）. Various cellular responses can be mediated by HMGB1 which binds to cell-surface receptors [e.g., the receptor for advanced glycation end products （RAGE）, Toll-like receptor （TLR）2, and TLR4]. Anti-HMGB1 treatment, such as anti-HMGB1 polyclonal or monoclonal antibodies, inhibitors （e.g., ethyl pyruvate） and antagonists （e.g., A box）, can protect against sepsis lethality and give a wider window for the treatment opportunity. HMGB1 is an attractive target for the development of new therapeutic strategies in the treatment of patients with septic complications.展开更多
Two position-assisted fast handover schemes, scheme A and scheme B, for LTE-A system under very high mobility scenarios, are proposed, together with their performance evaluation. Scheme A is designed to reduce handove...Two position-assisted fast handover schemes, scheme A and scheme B, for LTE-A system under very high mobility scenarios, are proposed, together with their performance evaluation. Scheme A is designed to reduce handover delay by making handover preparation before handover starts. Scheme B aims at reducing unnecessary handovers and improving handover success rate, by calculating the geographically best target handover cell, which makes it easier for mobile terminals to access the target cell. A system level simulation is conducted to evaluate the performance of these two schemes. It is shown that, scheme A could reduce inter-site handover delay by about 50 ms, while scheme B could cut down nearly 50% of all handovers when time-to-trigger （TTT） is 0 ms. Besides, as TTT gets larger, Scheme B has much better success rate.展开更多
The samples of InxGa（1-x）As/In（0.52）Al（0.48）As two-dimensional electron gas（2DEG）are grown by molecular beam epitaxy（MBE）.In the sample preparation process,the In content and spacer layer thickness are chang...The samples of InxGa（1-x）As/In（0.52）Al（0.48）As two-dimensional electron gas（2DEG）are grown by molecular beam epitaxy（MBE）.In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The InxGa1-xAs/In0.52Al0.48As 2DEG channel structures with mobilities as high as 10289 cm^2/V·s（300 K）and42040 cm^2/V·s（77 K）are obtained,and the values of carrier concentration（Nc）are 3.465×10^12/cm^2 and 2.502×10^12/cm^2,respectively.The THz response rates of In P-based high electron mobility transistor（HEMT）structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.展开更多
Dimethyl ether （DME） is a widely used industrial compound, and Shell developed a chemical EOR technique called DME- enhanced waterflood （DEW）. DME is applied as a miscible solvent for EOR application to enhance th...Dimethyl ether （DME） is a widely used industrial compound, and Shell developed a chemical EOR technique called DME- enhanced waterflood （DEW）. DME is applied as a miscible solvent for EOR application to enhance the performance of conventional waterflood. When DME is injected into the reservoir and contacts the oil, the first-contact miscibility process occurs, which leads to oil swelling and viscosity reduction. The reduction in oil density and viscosity improves oil mobility and reduces residual oil saturation, enhancing oil production. A numerical study based on compositional simulation has been developed to describe the phase behavior in the DEW model. An accurate compositional model is imperative because DME has a unique advantage of solubility in both oil and water. For DEW, oil recovery increased by 34% and 12% compared to conventional waterflood and CO2 flood, respectively. Compositional modeling and simulation of the DEW process indicated the unique solubility effect of DME on EOR performance.展开更多
The performance damage mechanism of InP-based high electron mobility transistors(HEMTs) after proton irradiation has been investigated comprehensively through induced defects.The effects of the defect type, defect ene...The performance damage mechanism of InP-based high electron mobility transistors(HEMTs) after proton irradiation has been investigated comprehensively through induced defects.The effects of the defect type, defect energy level with respect to conduction band ET, and defect concentration on the transfer and output characteristics of the device are discussed based on hydrodynamic model and Shockley–Read–Hall recombination model.The results indicate that only acceptorlike defects have a significant influence on device operation.Meanwhile, as defect energy level ETshifts away from conduction band, the drain current decreases gradually and finally reaches a saturation value with ETabove 0.5 eV.This can be attributed to the fact that at sufficient deep level, acceptor-type defects could not be ionized any more.Additionally,the drain current and transconductance degrade more severely with larger acceptor concentration.These changes of the electrical characteristics with proton radiation could be accounted for by the electron density reduction in the channel region from induced acceptor-like defects.展开更多
An optimized micro-gated terahertz detector with novel triple resonant antenna is presented.The novel resonant antenna operates at room temperature and shows more than a 700% increase in photocurrent response compared...An optimized micro-gated terahertz detector with novel triple resonant antenna is presented.The novel resonant antenna operates at room temperature and shows more than a 700% increase in photocurrent response compared to the conventional bowtie antenna.In finite-difference-time-domain simulations,we found the performance of the self-mixing GaN/AlGaN high electron mobility transistor detector is mainly dependent on the parameters L gs（the gap between the gate and the source/drain antenna） and L w（the gap between the source and drain antenna）.With the improved triple resonant antenna,an optimized micrometer-sized AlGaN/GaN high electron mobility transistor detector can achieve a high responsivity of 9.45×102 V/W at a frequency of 903 GHz at room temperature.展开更多
We report the direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene on SiO2/Si via van der Pauw geometry by using a home-designed four-probe scanning tunneling microscope（4P...We report the direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene on SiO2/Si via van der Pauw geometry by using a home-designed four-probe scanning tunneling microscope（4P-STM）. The gate-tunable conductivity and mobility are extracted from standard van der Pauw resistance measurements where the four STM probes contact the four peripheries of hexagonal graphene flakes, respectively. The high homogeneity of transport properties of the single-crystalline graphene flake is confirmed by comparing the extracted conductivities and mobilities from three setups with different geometry factors. Our studies provide a reliable solution for directly evaluating the entire electrical properties of graphene in a non-invasive way and could be extended to characterizing other two-dimensional materials.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.51938014,Grant No.22176217,Grant No.22276215)the Fundamental Research Funds for the Central Universities and the Research Funds of Renmin University of China(No.22XNKJ28).
文摘The development of passive NO_(x)adsorbers with cost-benefit and high NO_(x)storage capacity remains an on-going challenge to after-treatment technologies at lower temperatures associated with cold-start NO_(x)emissions.Herein,Cs_(1)Mg_(3)Al catalyst prepared by sol-gel method was cyclic tested in NO_(x)storage under 5 vol%water.At 100°C,the NO_(x)storage capacity(1219 μmol g^(-1))was much higher than that of Pt/BaO/Al_(2)O_(3)(610 μmol g^(-1)).This provided new insights for non-noble metal catalysts in low-temperature passive NO_(x)adsorption.The addition of Cs improved the mobility of oxygen species and thus improved the NO_(x)storage capacity.The XRD,XPS,IR spectra and in situ DRIFTs with NH3 probe showed an interaction between CsO_(x)and AlO_(x)sites via oxygen species formed on Cs_(1)Mg_(3)Al catalyst.The improved mobility of oxygen species inferred from O2-TPD was consistent with high NO_(x)storage capacity related to enhanced formation of nitrate and additional nitrite species by NO_(x)oxidation.Moreover,the addition of Mg might improve the stability of Cs_(1)Mg_(3)Al by stabilizing surface active oxygen species in cyclic experiments.
文摘We construct a one-dimensional quasiperiodic quantum walk to investigate the localization–delocalization transition.The inverse participation ratio and Lyapunov exponent are employed as two indexes to determine the mobility edge, a critical energy to distinguish the energy regions of extended and localized states. The analytical solution of mobility edge is obtained by the Lyapunov exponents in global theory, and the consistency of the two indexes is confirmed. We further study the dynamic characteristics of the quantum walk and show that the probabilities are localized to some specific lattice sites with time evolution. This phenomenon is explained by the effective potential of the Hamiltonian which corresponds to the phase in the coin operator of the quantum walk.
基金supported in part by the National Key Research and Development Program of China under 2020AAA0106000the National Natural Science Foundation of China under U20B2060 and U21B2036supported by a grant from the Guoqiang Institute, Tsinghua University under 2021GQG1005
文摘Human mobility prediction is important for many applications.However,training an accurate mobility prediction model requires a large scale of human trajectories,where privacy issues become an important problem.The rising federated learning provides us with a promising solution to this problem,which enables mobile devices to collaboratively learn a shared prediction model while keeping all the training data on the device,decoupling the ability to do machine learning from the need to store the data in the cloud.However,existing federated learningbased methods either do not provide privacy guarantees or have vulnerability in terms of privacy leakage.In this paper,we combine the techniques of data perturbation and model perturbation mechanisms and propose a privacy-preserving mobility prediction algorithm,where we add noise to the transmitted model and the raw data collaboratively to protect user privacy and keep the mobility prediction performance.Extensive experimental results show that our proposed method significantly outperforms the existing stateof-the-art mobility prediction method in terms of defensive performance against practical attacks while having comparable mobility prediction performance,demonstrating its effectiveness.
基金supported in part by the Natural Science Foundation of China(NSFC)under Grant 61971102in part by the Key Research and Development Program of Zhejiang Province under Grant 2022C01093.
文摘In indoor environments,various batterypowered Internet of Things(IoT)devices,such as remote controllers and electronic tags on high-level shelves,require efficient energy management.However,manually monitoring remaining energy levels and battery replacement is both inadequate and costly.This paper introduces an energy management system for indoor IoT,which includes a mobile energy station(ES)for enabling on-demand wireless energy transfer(WET)in radio frequency(RF),some energy receivers(ERs),and a cloud server.By implementing a two-stage positioning system and embedding energy receivers into traditional IoT devices,we robustly manage their energy storage.The experimental results demonstrate that the energy receiver can harvest a minimum power of 58 mW.
基金supported by the National Basic Research Program of China (973 Program No.2012CB316100)
文摘The fifth generation(5G) network is expected to support significantly large amount of mobile data traffic and huge number of wireless connections,to achieve better spectrum- and energy-efficiency,as well as quality of service(QoS) in terms of delay,reliability and security.Furthermore,the 5G network shall also incorporate high mobility requirements as an integral part,providing satisfactory service to users travelling at a speed up to 500 km/h.This paper provides a survey of potential high mobility wireless communication(HMWC) techniques for 5G network.After discussing the typical requirements and challenges of HMWC,key techniques to cope with the challenges are reviewed,including transmission techniques under the fast timevarying channels,network architecture with mobility support,and mobility management.Finally,future research directions on 5G high mobility communications are given.
基金supported by the Natural Science Foundation of Beijing,China (Grant No. 4092005)the National High Technology Research and Development Program of China (Grant No. 2009AA032704)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20091103110006)
文摘The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the A1GaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger A1GaN/GaN HEMT with 400μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged A1GaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip- level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.
基金supported by National Natural Science Foundation of China(No.51077062)
文摘A simple negative ion mobility spectrometer （IMS） is designed and used to investi- gate the factors that influence the number and efficiency of electrons generated by the needle-ring pulsed corona discharge electron source. Simulation with Ansoft Maxwell 12 is carried out to analyze the electric field distribution within the IMS, and to offer the basis and foundation for analyzing the measurement results. The measurement results of the quantities of electrons show that when the drift electric field strength and the ring inner diameter rise, both the number of ef- fective electrons and the effective electron rate are increased. When the discharge voltage becomes stronger, the number of effective electrons goes up while the effective electron rate goes down. In light of the simulation results, mechanisms underlying the effects of drift electric field strength, ring inner diameter, and discharge voltage on the effective electron number and effective electron rate are discussed. These will make great sense for designing negative ion mode IMS using the needle-ring pulsed corona discharge as the electron source.
基金supported by National Natural Science Foundation of China (Grant Nos 60744003,10635040,10532060 and 10672146)the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20060358065)+2 种基金National Science Fund for Fostering Talents in Basic Science (Grant No J0630319)A grant from the Health,Welfare and Food Bureau of the Hong Kong SAR GovernmentShanghai Leading Academic Discipline Project (Project Number:J50101)
文摘In this paper, we study the dynamical behaviour of an epidemic on complex networks with population mobility. In our model, the number of people on each node is unrestricted as the nodes of the network are considered as cities, communities, and so on. Because people can travel between different cities, we study the effect of a population＇s mobility on the epidemic spreading. In view of the population＇s mobility, we suppose that the susceptible individual can be infected by an infected individual in the same city or other connected cities. Simulations are presented to verify our analysis.
基金the National Basic Research Program of China(Grant No.2013CBA01604)the National Science and Technology Major Project of China(Grant No.2011ZX02707)
文摘Poly(methyl methacrylate)(PMMA) is widely used for graphene transfer and device fabrication.However,it inevitably leaves a thin layer of polymer residues after acetone rinsing and leads to dramatic degradation of device performance.How to eliminate contamination and restore clean surfaces of graphene is still highly demanded.In this paper,we present a reliable and position-controllable method to remove the polymer residues on graphene films by laser exposure.Under proper laser conditions,PMMA residues can be substantially reduced without introducing defects to the underlying graphene.Furthermore,by applying this laser cleaning technique to the channel and contacts of graphene fieldeffect transistors(GFETs),higher carrier mobility as well as lower contact resistance can be realized.This work opens a way for probing intrinsic properties of contaminant-free graphene and fabricating high-performance GFETs with both clean channel and intimate graphene/metal contact.
基金Project supported by the National Natural Science Foundation(Grant No.U1404108)the Innovative Talents of Universities in Henan Province of China(Grant No.17HASTIT013)+1 种基金the Basic and Frontier Technology Research Program of Henan Province of China(Grant No.162300410056)the Key Scientific Research Projects of Higher Institutions in Henan Province of China(Grant No.19A140018).
文摘Searching for two-dimensional（2 D） stable materials with direct band gap and high carrier mobility has attracted great attention for their electronic device applications.Using the first principles calculations and particle swarm optimization（PSO） method,we predict a new 2 D stable material（HfNZ monolayer） with the global minimum of 2 D space.The HfNZ monolayer possesses direct band gap（～1.46 eV） and it is predicted to have high carrier mobilities(～103 cm2·V-1·s-1)from deformation potential theory.The direct band gap can be well maintained and flexibly modulated by applying an easily external strain under the strain conditions.In addition,the newly predicted HfN2 monolayer possesses good thermal,dynamical,and mechanical stabilities,which are verified by ab initio molecular dynamics simulations,phonon dispersion and elastic constants.These results demonstrate that HfN2 monolayer is a promising candidate in future microelectronic devices.
基金supported,in part,by grants from the National Natural Science Foundation(Nos.81130035,30901561,30971192,81071545)the National Basic Research Program of China(No.2012CB518102)the China Postdoctoral Science Foundation(Nos.20100480347,201104125)
文摘High mobility group box 1 protein （HMGB1） is a highly conserved, ubiquitous protein in the nuclei and cytoplasm of nearly all cell types. HMGB1 is secreted into the extracellular milieu and acts as a proinflammatory cytokine. In this article we reviewed briefly the cellular immune response mediated by HMGB1 in inflammation and sepsis. This systemic review is mainly based on our own work and other related reports HMGB1 can actively affect the immune functions of many types of cells including T lymphocytes, regulatory T cells （Tregs）, dendritic cells （DCs）, macrophages, and natural killer cells （NK cells）. Various cellular responses can be mediated by HMGB1 which binds to cell-surface receptors [e.g., the receptor for advanced glycation end products （RAGE）, Toll-like receptor （TLR）2, and TLR4]. Anti-HMGB1 treatment, such as anti-HMGB1 polyclonal or monoclonal antibodies, inhibitors （e.g., ethyl pyruvate） and antagonists （e.g., A box）, can protect against sepsis lethality and give a wider window for the treatment opportunity. HMGB1 is an attractive target for the development of new therapeutic strategies in the treatment of patients with septic complications.
基金supported by the National Natural Science Foundation of China(No.61032002)the National Basic Research Program of China(973 Program No.2012CB316100)the 111 project(No.111-2-14)
文摘Two position-assisted fast handover schemes, scheme A and scheme B, for LTE-A system under very high mobility scenarios, are proposed, together with their performance evaluation. Scheme A is designed to reduce handover delay by making handover preparation before handover starts. Scheme B aims at reducing unnecessary handovers and improving handover success rate, by calculating the geographically best target handover cell, which makes it easier for mobile terminals to access the target cell. A system level simulation is conducted to evaluate the performance of these two schemes. It is shown that, scheme A could reduce inter-site handover delay by about 50 ms, while scheme B could cut down nearly 50% of all handovers when time-to-trigger （TTT） is 0 ms. Besides, as TTT gets larger, Scheme B has much better success rate.
基金Project supported by the Foundation for Scientific Instrument and Equipment Development,Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the National Natural Science Foundation of China(Grant No.61435012)
文摘The samples of InxGa（1-x）As/In（0.52）Al（0.48）As two-dimensional electron gas（2DEG）are grown by molecular beam epitaxy（MBE）.In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The InxGa1-xAs/In0.52Al0.48As 2DEG channel structures with mobilities as high as 10289 cm^2/V·s（300 K）and42040 cm^2/V·s（77 K）are obtained,and the values of carrier concentration（Nc）are 3.465×10^12/cm^2 and 2.502×10^12/cm^2,respectively.The THz response rates of In P-based high electron mobility transistor（HEMT）structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.
基金supported by the Energy Efficiency & Resources Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) of the Ministry of Trade, Industry, & Energy, Republic of Korea (No. 20152520100760)
文摘Dimethyl ether （DME） is a widely used industrial compound, and Shell developed a chemical EOR technique called DME- enhanced waterflood （DEW）. DME is applied as a miscible solvent for EOR application to enhance the performance of conventional waterflood. When DME is injected into the reservoir and contacts the oil, the first-contact miscibility process occurs, which leads to oil swelling and viscosity reduction. The reduction in oil density and viscosity improves oil mobility and reduces residual oil saturation, enhancing oil production. A numerical study based on compositional simulation has been developed to describe the phase behavior in the DEW model. An accurate compositional model is imperative because DME has a unique advantage of solubility in both oil and water. For DEW, oil recovery increased by 34% and 12% compared to conventional waterflood and CO2 flood, respectively. Compositional modeling and simulation of the DEW process indicated the unique solubility effect of DME on EOR performance.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11775191,61404115,61434006,and 11475256)the Development Fund for Outstanding Young Teachers in Zhengzhou University of China(Grant No.1521317004)the Doctoral Student Overseas Study Program of Zhengzhou University,China
文摘The performance damage mechanism of InP-based high electron mobility transistors(HEMTs) after proton irradiation has been investigated comprehensively through induced defects.The effects of the defect type, defect energy level with respect to conduction band ET, and defect concentration on the transfer and output characteristics of the device are discussed based on hydrodynamic model and Shockley–Read–Hall recombination model.The results indicate that only acceptorlike defects have a significant influence on device operation.Meanwhile, as defect energy level ETshifts away from conduction band, the drain current decreases gradually and finally reaches a saturation value with ETabove 0.5 eV.This can be attributed to the fact that at sufficient deep level, acceptor-type defects could not be ionized any more.Additionally,the drain current and transconductance degrade more severely with larger acceptor concentration.These changes of the electrical characteristics with proton radiation could be accounted for by the electron density reduction in the channel region from induced acceptor-like defects.
基金Project supported by the National Basic Research Program of China (Grant No. G2009CB929303)the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. Y0BAQ31001)+1 种基金the National Natural Science Foundation of China(Grant Nos. 60871077 and 61107093)the Visiting Professorship for Senior International Scientists of the Chinese Academy of Sciences (Grant No. 2010T2J07)
文摘An optimized micro-gated terahertz detector with novel triple resonant antenna is presented.The novel resonant antenna operates at room temperature and shows more than a 700% increase in photocurrent response compared to the conventional bowtie antenna.In finite-difference-time-domain simulations,we found the performance of the self-mixing GaN/AlGaN high electron mobility transistor detector is mainly dependent on the parameters L gs（the gap between the gate and the source/drain antenna） and L w（the gap between the source and drain antenna）.With the improved triple resonant antenna,an optimized micrometer-sized AlGaN/GaN high electron mobility transistor detector can achieve a high responsivity of 9.45×102 V/W at a frequency of 903 GHz at room temperature.
基金supported by the Science Fund from the Ministry of Science and Technology of China(Grant No.2013CBA01600)the National Key Research&Development Project of China(Grant No.2016YFA0202300)+1 种基金the National Natural Science Foundation of China(Grant Nos.61474141,61674170,61335006,61390501,51325204,and 51210003)the Chinese Academy of Sciences(CAS) and Youth Innovation Promotion Association of CAS(Grant No.20150005)
文摘We report the direct measurements of conductivity and mobility in millimeter-sized single-crystalline graphene on SiO2/Si via van der Pauw geometry by using a home-designed four-probe scanning tunneling microscope（4P-STM）. The gate-tunable conductivity and mobility are extracted from standard van der Pauw resistance measurements where the four STM probes contact the four peripheries of hexagonal graphene flakes, respectively. The high homogeneity of transport properties of the single-crystalline graphene flake is confirmed by comparing the extracted conductivities and mobilities from three setups with different geometry factors. Our studies provide a reliable solution for directly evaluating the entire electrical properties of graphene in a non-invasive way and could be extended to characterizing other two-dimensional materials.
