We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact （W-BEC） array. The W-BEC in diameter 26Ohm is fabricated by a 0.18μm CMOS ...We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact （W-BEC） array. The W-BEC in diameter 26Ohm is fabricated by a 0.18μm CMOS technology, and the TiOx/TiNx cell array is formed by rf magnetron sputtering and reactive ion etching. In current-voltage （I- V） measurement for current-sweeping mode, large snap-back of voltage is observed, which indicates that the sample changes from high-resistance state （HRS） to low-resistance state （LRS）. In the I-V measurement for voltage-sweeping mode, large current collapse is observed, which indicates that the sample changes from LRS to HRS. The current difference between HRS and LRS is about two orders. The threshold current and voltage for the resistance change is about 5.0- 10^-5 A and 2.5 V, respectively. The pulse voltage can also change the resistance and the pulse time is as shorter as 30 ns for the resistance change. These properties of TiOx/TiNx film are comparable to that of conventional phase-change material, which makes it possible for RRAM application.展开更多
采用一步溶液法构筑了反式结构NiO/NH_2CH=NH2PbI_3(FAPbI_3)/PCBM/Ag钙钛矿电池。本文研究了钙钛矿薄膜FAPb I3结晶性、表面形貌及光电性能的影响。实验结果表明构筑反式钙钛矿电池短路电流Jsc=15.89 mA·cm-2,开路电压Voc=0.8 m V...采用一步溶液法构筑了反式结构NiO/NH_2CH=NH2PbI_3(FAPbI_3)/PCBM/Ag钙钛矿电池。本文研究了钙钛矿薄膜FAPb I3结晶性、表面形貌及光电性能的影响。实验结果表明构筑反式钙钛矿电池短路电流Jsc=15.89 mA·cm-2,开路电压Voc=0.8 m V,填充因子FF=32%,光电转换效率为PCE=4.49%。展开更多
基金Supported by the National Basic Research Program of China under Grant No 2006CB302700, the National High Technology Development Programme of China under Grant No 2006AA03Z360~ Chinese Academy of Sciences （Y2005027）, Science and Technology Council of Shanghai under Grant Nos AM0517, 05JC14076, 0552nm043, 06QA14060, 06XD14025, 0652nm003, and 06DZ22017, the China Postdoctoral Science Foundation, and the K. C. Wong Education Foundation （Hong Kong）.
文摘We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact （W-BEC） array. The W-BEC in diameter 26Ohm is fabricated by a 0.18μm CMOS technology, and the TiOx/TiNx cell array is formed by rf magnetron sputtering and reactive ion etching. In current-voltage （I- V） measurement for current-sweeping mode, large snap-back of voltage is observed, which indicates that the sample changes from high-resistance state （HRS） to low-resistance state （LRS）. In the I-V measurement for voltage-sweeping mode, large current collapse is observed, which indicates that the sample changes from LRS to HRS. The current difference between HRS and LRS is about two orders. The threshold current and voltage for the resistance change is about 5.0- 10^-5 A and 2.5 V, respectively. The pulse voltage can also change the resistance and the pulse time is as shorter as 30 ns for the resistance change. These properties of TiOx/TiNx film are comparable to that of conventional phase-change material, which makes it possible for RRAM application.
文摘采用一步溶液法构筑了反式结构NiO/NH_2CH=NH2PbI_3(FAPbI_3)/PCBM/Ag钙钛矿电池。本文研究了钙钛矿薄膜FAPb I3结晶性、表面形貌及光电性能的影响。实验结果表明构筑反式钙钛矿电池短路电流Jsc=15.89 mA·cm-2,开路电压Voc=0.8 m V,填充因子FF=32%,光电转换效率为PCE=4.49%。
