Here we report a femtosecond laser direct writing(a precise 3D printing also known as two-photon polymerization lithography) of hybrid organic-inorganic SZ2080^(TM)pre-polymer without using any photo-initiator and app...Here we report a femtosecond laser direct writing(a precise 3D printing also known as two-photon polymerization lithography) of hybrid organic-inorganic SZ2080^(TM)pre-polymer without using any photo-initiator and applying ~100 fs oscillator operating at 517 nm wavelength and 76 MHz repetition rate. The proof of concept was experimentally demonstrated and benchmarking 3D woodpile nanostructures, micro-scaffolds, free-form micro-object “Benchy” and bulk micro-cubes are successfully produced. The essential novelty underlies the fact that non-amplified laser systems delivering just 40-500 p J individual pulses are sufficient for inducing localized cross-linking reactions within hundreds of nanometers in cross sections. And it is opposed to the prejudice that higher pulse energies and lower repetition rates of amplified lasers are necessary for structuring non-photosensitized polymers. The experimental work is of high importance for fundamental understanding of laser enabled nanoscale 3D additive manufacturing and widens technology’ s field of applications where the avoidance of photo-initiator is preferable or is even a necessity, such as micro-optics, nano-photonics, and biomedicine.展开更多
ASET, Association of Super-advanced Electronics Technologies, has been taking the initiative in developing EUV lithography technology in Japan for the past three years. The aspherical mirror metrology using a visible ...ASET, Association of Super-advanced Electronics Technologies, has been taking the initiative in developing EUV lithography technology in Japan for the past three years. The aspherical mirror metrology using a visible light point diffraction interferometer (PDI), the wave front measurement using an at-wavelength PDI, and an at wavelength reflectometry for multilayers, various imaging simulations, multilayer coatings for the mask, the development of absorber materials for mask patterning, the mask substrate cleaning technique, and various photoresist processes have been developed. The visible light PDI employs a 0.5-μm pinhole as an aperture to generate an ideal spherical wave front and can measure a 0.3-N A mirror maximum. The at-wavelength PDI can measure the wave front error of the projection optics. The at-wavelength reflectometer can measure the reflectivity of multilayers and the round-robin test is taking place among ASET, the ALS in Lawrence Berkeley, and BESSY in Germany. The mask cleaning technique employs a supersonic hydro-cleaning technique. We have confirmed that the single layer resists can be used for EUV lithography.展开更多
We have been developing debris-free laser plasma sources for EUV lithography since 1996. Two types of debris-free sources, such as cryogenic target and gas-puff target laser plasma sources, were designed and built up ...We have been developing debris-free laser plasma sources for EUV lithography since 1996. Two types of debris-free sources, such as cryogenic target and gas-puff target laser plasma sources, were designed and built up in CIOMP. EUV radiation spectra of the sources with a variety of targets have been obtained by different ways.展开更多
According to the SIA roadmap, by the year of 2006, minimum feature size of 70 nm on wafer is required. Research in U.S., Japan and Europe is aimed at developing and demonstrating an EUVL tool for critical feature size...According to the SIA roadmap, by the year of 2006, minimum feature size of 70 nm on wafer is required. Research in U.S., Japan and Europe is aimed at developing and demonstrating an EUVL tool for critical feature size of 70 nm and below. In Japan, Himeji institute of technology (HIT) has developed an EUVL laboratory tool , which has a practical exposure field of 30mm×28mm. The alignment and assembly of three aspherical mirror optics were completed. A final wave front error of less than 3 nm was achieved. Using this system, exposure experiments are performed using synchrotron facility of New Subaru. Up to now, 56nm patterns have been replicated in the exposure field of 10mm×1mm. And using scanning stages, 100 nm L&S patterns have been replicated in the field of 10mm×5 mm.展开更多
Two beamlines and stations for soft X-ray lithography and hard X-ray lithography at NSRL are presented. Synchrotron radiation lithography (SRL) and mask techniques are developed, and the micro-electro-mechanical syste...Two beamlines and stations for soft X-ray lithography and hard X-ray lithography at NSRL are presented. Synchrotron radiation lithography (SRL) and mask techniques are developed, and the micro-electro-mechanical systems (MEMS) techniques are also investigated at NSRL. In this paper, some results based on SRL and MEMS techniques are reported, and sub-micron and high aspect ratio microstructures are given. Some micro-devices, such as microreactors are fabricated at NSRL.展开更多
Electron beam lithography(EBL) is a key technology in the fabrication of nanoscale silicon optical waveguide. The influence of exposure dose, the main process parameter of EBL, on the structure profile of poly-methyl ...Electron beam lithography(EBL) is a key technology in the fabrication of nanoscale silicon optical waveguide. The influence of exposure dose, the main process parameter of EBL, on the structure profile of poly-methyl methacrylate(PMMA) after development was studied using a silicon on insulator(SOI) wafer with 220 nm top silicon as the substrate. The relationship between exposure dose and structure pattern width after development was analyzed according to the measurement results. The optimum exposure dose of 220 μC/cm^(2) was found to obtain a final structure consistent with the designed mask value through subsequent processes. At the same time, according to the image segmentation curve tracking technology, the contour extraction process of the dose test results was carried out, and the relationship among mask design value, exposure dose and two-dimensional roughness of boundary contour was analyzed, which can provide reference for the subsequent electron beam lithography of the same substrate material.展开更多
In this paper,we demonstrate an auto accurate alignment method to align mask-substrate in the prototype of plasmonic lithography(PL),which is essential for multilayer nanostructure fabrication with high resolution,low...In this paper,we demonstrate an auto accurate alignment method to align mask-substrate in the prototype of plasmonic lithography(PL),which is essential for multilayer nanostructure fabrication with high resolution,low cost,high efficiency,and high throughput,such as circuit manufacturing and other applications.We obtained an alignment signal with sensitivity better than 20 nm by using the Moiréfringe image.However,only using the Moiréfringes cannot guarantee the alignment of the mask and the substrate because the Moiréfringe repeats itself when the mask and substrate are offset by a fixed displacement.To eliminate the ambiguity,boxes and the crosses alignment marks are designed beside the grating marks on the substrate and the mask,respectively.A two-step alignment scheme including coarse alignment and fine alignment is explored in the auto alignment system.In the stage of coarse alignment,the edge detection algorithm based on Canny operator is adopted to detect the edges image effectively.In the process of fine alignment,Fourier transform based on Moiréfringe image is obtained to improve the alignment accuracy.In addition,experimental results of overlay indicate that PL can obtain sub-100 nm alignment accuracy over an area of 1 cm^2 using the proposed two-step alignment scheme.Via the substrate-mask mismatch compensation,better stages and precise environment control,it is expected that much higher overlay accuracy is feasible.展开更多
Lithography is one of the most important and complicated key equipment for the integr ated circuit man ufacture.The 2一D positioning device is the importan t subsystem of lithography.Compared with conventional 2一D po...Lithography is one of the most important and complicated key equipment for the integr ated circuit man ufacture.The 2一D positioning device is the importan t subsystem of lithography.Compared with conventional 2一D positioning systems with cumbersome stacked arrangement,the 2-D positioning systems with planar motors have received increasing attention recently.Currently,many types of planar motors have been proposed.展开更多
The authors have developed an experimental system for the studies of extreme ultraviolet projection lithography at 13.0nm wavelength, which includes a laser plasma source, an ellipsoidal condenser, a transmission mask...The authors have developed an experimental system for the studies of extreme ultraviolet projection lithography at 13.0nm wavelength, which includes a laser plasma source, an ellipsoidal condenser, a transmission mask and a Schwarzschild optics. The optical system is optimized to achieve 0.1μm resolution over a 0.1mm diameter image field of view and the mirrors of the objective were coated with Mo/Si multilayer to provide 60% reflectance at near normal incidence angle for 13.0nm radiation.展开更多
基金Project(S-MIP-20-17) supported by the Research Council of LithuaniaProject(871124) supported by the EU Horizon 2020, Research and Innovation program LASERLAB-EUROPE JRA。
文摘Here we report a femtosecond laser direct writing(a precise 3D printing also known as two-photon polymerization lithography) of hybrid organic-inorganic SZ2080^(TM)pre-polymer without using any photo-initiator and applying ~100 fs oscillator operating at 517 nm wavelength and 76 MHz repetition rate. The proof of concept was experimentally demonstrated and benchmarking 3D woodpile nanostructures, micro-scaffolds, free-form micro-object “Benchy” and bulk micro-cubes are successfully produced. The essential novelty underlies the fact that non-amplified laser systems delivering just 40-500 p J individual pulses are sufficient for inducing localized cross-linking reactions within hundreds of nanometers in cross sections. And it is opposed to the prejudice that higher pulse energies and lower repetition rates of amplified lasers are necessary for structuring non-photosensitized polymers. The experimental work is of high importance for fundamental understanding of laser enabled nanoscale 3D additive manufacturing and widens technology’ s field of applications where the avoidance of photo-initiator is preferable or is even a necessity, such as micro-optics, nano-photonics, and biomedicine.
文摘ASET, Association of Super-advanced Electronics Technologies, has been taking the initiative in developing EUV lithography technology in Japan for the past three years. The aspherical mirror metrology using a visible light point diffraction interferometer (PDI), the wave front measurement using an at-wavelength PDI, and an at wavelength reflectometry for multilayers, various imaging simulations, multilayer coatings for the mask, the development of absorber materials for mask patterning, the mask substrate cleaning technique, and various photoresist processes have been developed. The visible light PDI employs a 0.5-μm pinhole as an aperture to generate an ideal spherical wave front and can measure a 0.3-N A mirror maximum. The at-wavelength PDI can measure the wave front error of the projection optics. The at-wavelength reflectometer can measure the reflectivity of multilayers and the round-robin test is taking place among ASET, the ALS in Lawrence Berkeley, and BESSY in Germany. The mask cleaning technique employs a supersonic hydro-cleaning technique. We have confirmed that the single layer resists can be used for EUV lithography.
文摘We have been developing debris-free laser plasma sources for EUV lithography since 1996. Two types of debris-free sources, such as cryogenic target and gas-puff target laser plasma sources, were designed and built up in CIOMP. EUV radiation spectra of the sources with a variety of targets have been obtained by different ways.
文摘According to the SIA roadmap, by the year of 2006, minimum feature size of 70 nm on wafer is required. Research in U.S., Japan and Europe is aimed at developing and demonstrating an EUVL tool for critical feature size of 70 nm and below. In Japan, Himeji institute of technology (HIT) has developed an EUVL laboratory tool , which has a practical exposure field of 30mm×28mm. The alignment and assembly of three aspherical mirror optics were completed. A final wave front error of less than 3 nm was achieved. Using this system, exposure experiments are performed using synchrotron facility of New Subaru. Up to now, 56nm patterns have been replicated in the exposure field of 10mm×1mm. And using scanning stages, 100 nm L&S patterns have been replicated in the field of 10mm×5 mm.
文摘Two beamlines and stations for soft X-ray lithography and hard X-ray lithography at NSRL are presented. Synchrotron radiation lithography (SRL) and mask techniques are developed, and the micro-electro-mechanical systems (MEMS) techniques are also investigated at NSRL. In this paper, some results based on SRL and MEMS techniques are reported, and sub-micron and high aspect ratio microstructures are given. Some micro-devices, such as microreactors are fabricated at NSRL.
基金Project(52175445) supported by the National Natural Science Foundation of ChinaProject(ZZYJKT2020-09) supported by the State Key Laboratory of High Performance Complex Manufacturing (Central South University),China+1 种基金Projects(2020JJ4247, 2022JJ30743) supported by the Natural Foundation of Hunan Province,ChinaProject(1053320190337) supported by the Fundamental Research Funds for the Central University,China。
文摘Electron beam lithography(EBL) is a key technology in the fabrication of nanoscale silicon optical waveguide. The influence of exposure dose, the main process parameter of EBL, on the structure profile of poly-methyl methacrylate(PMMA) after development was studied using a silicon on insulator(SOI) wafer with 220 nm top silicon as the substrate. The relationship between exposure dose and structure pattern width after development was analyzed according to the measurement results. The optimum exposure dose of 220 μC/cm^(2) was found to obtain a final structure consistent with the designed mask value through subsequent processes. At the same time, according to the image segmentation curve tracking technology, the contour extraction process of the dose test results was carried out, and the relationship among mask design value, exposure dose and two-dimensional roughness of boundary contour was analyzed, which can provide reference for the subsequent electron beam lithography of the same substrate material.
基金supported by the 973 Program of China (2013CBA01700)the National Natural Science Funds (61138002)
文摘In this paper,we demonstrate an auto accurate alignment method to align mask-substrate in the prototype of plasmonic lithography(PL),which is essential for multilayer nanostructure fabrication with high resolution,low cost,high efficiency,and high throughput,such as circuit manufacturing and other applications.We obtained an alignment signal with sensitivity better than 20 nm by using the Moiréfringe image.However,only using the Moiréfringes cannot guarantee the alignment of the mask and the substrate because the Moiréfringe repeats itself when the mask and substrate are offset by a fixed displacement.To eliminate the ambiguity,boxes and the crosses alignment marks are designed beside the grating marks on the substrate and the mask,respectively.A two-step alignment scheme including coarse alignment and fine alignment is explored in the auto alignment system.In the stage of coarse alignment,the edge detection algorithm based on Canny operator is adopted to detect the edges image effectively.In the process of fine alignment,Fourier transform based on Moiréfringe image is obtained to improve the alignment accuracy.In addition,experimental results of overlay indicate that PL can obtain sub-100 nm alignment accuracy over an area of 1 cm^2 using the proposed two-step alignment scheme.Via the substrate-mask mismatch compensation,better stages and precise environment control,it is expected that much higher overlay accuracy is feasible.
文摘Lithography is one of the most important and complicated key equipment for the integr ated circuit man ufacture.The 2一D positioning device is the importan t subsystem of lithography.Compared with conventional 2一D positioning systems with cumbersome stacked arrangement,the 2-D positioning systems with planar motors have received increasing attention recently.Currently,many types of planar motors have been proposed.
文摘The authors have developed an experimental system for the studies of extreme ultraviolet projection lithography at 13.0nm wavelength, which includes a laser plasma source, an ellipsoidal condenser, a transmission mask and a Schwarzschild optics. The optical system is optimized to achieve 0.1μm resolution over a 0.1mm diameter image field of view and the mirrors of the objective were coated with Mo/Si multilayer to provide 60% reflectance at near normal incidence angle for 13.0nm radiation.
