Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hin...Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.展开更多
采用射频磁控溅射法在不同氧气流量条件下制备了非晶In Ga Zn O(a-IGZO)薄膜。利用霍尔效应,X射线光电子能谱(XPS)和光透过率谱研究了氧气流量对a-IGZO薄膜性能影响的规律。研究表明a-IGZO薄膜呈现n型半导体特性。当氧气流量为0.5 m L/...采用射频磁控溅射法在不同氧气流量条件下制备了非晶In Ga Zn O(a-IGZO)薄膜。利用霍尔效应,X射线光电子能谱(XPS)和光透过率谱研究了氧气流量对a-IGZO薄膜性能影响的规律。研究表明a-IGZO薄膜呈现n型半导体特性。当氧气流量为0.5 m L/min时薄膜电子迁移率达到最大12 cm2/Vs。当氧气流量大于1 m L/min时,薄膜呈现出半绝缘电导特性。XPS揭示了a-IGZO薄膜中In,Ga,Zn元素均以In3+,Ga3+及Zn2+价态存在,氧气流量分别为0和4 m L/min的a-IGZO薄膜的O 1s高分辨率XPS图谱表明低氧气流量a-IGZO薄膜中存在与氧空位相关的氧晶格元素O 1s峰而高氧气流量样品中没有显示此峰,表明生长过程中增加氧气流量降低了a-IGZO中氧空位缺陷浓度。此外,a-IGZO薄膜在可见光范围内的光透过率随氧气流量的增加而提高,当氧气流量为1 m L/min时a-IGZO薄膜平均透过率达到80%,光学禁带宽度为3.37 e V,为实现高性能透明a-IGZO-TFT器件奠定基础。展开更多
针对异步对称双栅结构的氧化铟镓锌(InGaZnO)薄膜晶体管(thin film transistors,TFTs),求解泊松方程,并根据载流子在亚阈区、导通区的不同分布特点,在亚阈区引入等效平带电压的概念,在导通区运用Lambert W函数近似,建立异步对称双栅InGa...针对异步对称双栅结构的氧化铟镓锌(InGaZnO)薄膜晶体管(thin film transistors,TFTs),求解泊松方程,并根据载流子在亚阈区、导通区的不同分布特点,在亚阈区引入等效平带电压的概念,在导通区运用Lambert W函数近似,建立异步对称双栅InGaZnO TFT表面电势解析模型。该模型的拟合参数只有2个,能够较好地反映介电层厚度、沟道电压等参数对电势的影响。基于所建模型及TCAD分析,研究InGaZnO层厚度、栅介质层厚度以及缺陷态密度等物理量对独立栅控双栅晶体管表面电势的影响。研究结果表明:在亚阈区,表面电势随着底栅电压增大呈近似线性增大,且在顶栅电压调制作用下平移;在导通区,表面电势随着底栅电压的增加逐步饱和,且电势值与顶栅调制电压作用相关度小。表面电势的解析模型与TCAD数值计算结果对比,具有较高的吻合度;在不同缺陷态密度分布情况下,电势模型的计算值与TCAD分析值相对误差均小于10%。本研究成果有利于了解双栅InGaZnO TFT的导通机制,可用于InGaZnO TFT的器件建模及相关集成电路设计。展开更多
文摘Rectifying circuit,as a crucial component for converting alternating current into direct current,plays a pivotal role in energy harvesting microsystems.Traditional silicon-based or germanium-based rectifier diodes hinder system integration due to their specific manufacturing processes.Conversely,metal oxide diodes,with their simple fabrication techniques,offer advantages for system integration.The oxygen vacancy defect of oxide semiconductor will greatly affect the electrical performance of the device,so the performance of the diode can be effectively controlled by adjusting the oxygen vacancy concentration.This study centers on optimizing the performance of diodes by modulating the oxygen vacancy concentration within InGaZnO films through control of oxygen flows during the sputtering process.Experimental results demonstrate that the diode exhibits a forward current density of 43.82 A·cm^(−2),with a rectification ratio of 6.94×10^(4),efficiently rectifying input sine signals with 1 kHz frequency and 5 V magnitude.These results demonstrate its potential in energy conversion and management.By adjusting the oxygen vacancy,a methodology is provided for optimizing the performance of rectifying diodes.
文摘采用射频磁控溅射法在不同氧气流量条件下制备了非晶In Ga Zn O(a-IGZO)薄膜。利用霍尔效应,X射线光电子能谱(XPS)和光透过率谱研究了氧气流量对a-IGZO薄膜性能影响的规律。研究表明a-IGZO薄膜呈现n型半导体特性。当氧气流量为0.5 m L/min时薄膜电子迁移率达到最大12 cm2/Vs。当氧气流量大于1 m L/min时,薄膜呈现出半绝缘电导特性。XPS揭示了a-IGZO薄膜中In,Ga,Zn元素均以In3+,Ga3+及Zn2+价态存在,氧气流量分别为0和4 m L/min的a-IGZO薄膜的O 1s高分辨率XPS图谱表明低氧气流量a-IGZO薄膜中存在与氧空位相关的氧晶格元素O 1s峰而高氧气流量样品中没有显示此峰,表明生长过程中增加氧气流量降低了a-IGZO中氧空位缺陷浓度。此外,a-IGZO薄膜在可见光范围内的光透过率随氧气流量的增加而提高,当氧气流量为1 m L/min时a-IGZO薄膜平均透过率达到80%,光学禁带宽度为3.37 e V,为实现高性能透明a-IGZO-TFT器件奠定基础。
