The effects of atomic number Z on the energy distribution of hot electrons generated by the interaction of 60fs, 130mJ, 800nm, and 7×10^17W/cm^2 laser pulses with metallic targets have been studied experimentally...The effects of atomic number Z on the energy distribution of hot electrons generated by the interaction of 60fs, 130mJ, 800nm, and 7×10^17W/cm^2 laser pulses with metallic targets have been studied experimentally. The results show that the number and the effective temperature of hot electrons increase with the atomic number Z of metallic targets, and the temperature of hot electrons are in the range of 190-230keV, which is consistent with a scaling law of hot electrons temperature.展开更多
Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentiona...Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.展开更多
The transport of hot electrons in inertial confinement fusion(ICF)is integrated issue due to the coupling of hydrodynamic evolution and many physical processes.A hot electron transport code is developed and coupled wi...The transport of hot electrons in inertial confinement fusion(ICF)is integrated issue due to the coupling of hydrodynamic evolution and many physical processes.A hot electron transport code is developed and coupled with the radiation hydrodynamic code MULTI1D in this study.Using the code,the slowing-down process and ablation process of the hot electron beam are simulated.The ablation pressure scaling law of hot electron beam is confirmed in our simulations.The hot electron transport is simulated in the radiation-ablated plasmas relevant to indirect-drive ICF,where the spatial profile of hot electron energy deposition is presented around the shock compressed region.It is shown that the hot electron can prominently increase the total ablation pressure in the early phase of radiation-ablated plasma.So,our study suggests that a potential-driven symmetric mechanism may occur under the irradiation of asymmetric hot electron beam.The possible degradation from the hot electron transport and preheating is also discussed.展开更多
A silver microelectrode with a diameter of 30μm in an aqueous K_(2)SO_(4) electrolyte was irradiated with 55 fs and 213 fs laser pulses.This caused the emission of electrons which transiently charged the electrochemi...A silver microelectrode with a diameter of 30μm in an aqueous K_(2)SO_(4) electrolyte was irradiated with 55 fs and 213 fs laser pulses.This caused the emission of electrons which transiently charged the electrochemical double layer.The two applied pulse durations were significantly shorter than the electron-phonon relaxation time.The laser pulse durations had negligible impact on the emitted charge,which is incompatible with multiphoton emission.On the other hand,the ob-served dependence of emitted charge on laser fluence and electrode potential supports the thermionic emission mechanism.展开更多
We report on the investigation of optimal bias region of a wide-band superconducting hot electron bolometer(HEB)mixer in terms of noise temperature performance for multi-pixel heterodyne receiver application in the 5-...We report on the investigation of optimal bias region of a wide-band superconducting hot electron bolometer(HEB)mixer in terms of noise temperature performance for multi-pixel heterodyne receiver application in the 5-meter Dome A Terahertz Explorer(DATE5)telescope.By evaluating the double sideband(DSB)receiver noise temperature(Trec)across a wide frequency range from 0.2 THz to 1.34 THz and with a large number of bias points,a broad optimal bias region has been observed,illustrating a good bias applicability for multipixel application since the performance of the HEB mixer is uniquely determined by each bias point.The noise temperature of the HEB mixer has been analyzed by calibrating the noise contribution of all RF components,whose transmissions have been measured by a time-domain spectroscopy.The corrected noise temperature distribution shows a frequency independence relation.The dependence of the optimal bias region on the bath temperature of the HEB mixer has also been investigated,the bath temperature has limited effect on the lowest receiver noise temperature until 7 K,however the optimal bias region deteriorates obviously with increasing bath temperature.展开更多
Terahertz （THz） direct detectors based on superconducting niobium nitride （NbN） hot electron bolometers （HEBs） with microwave （MW） biasing are studied. The MW is used to bias the HEB to the optimum point and t...Terahertz （THz） direct detectors based on superconducting niobium nitride （NbN） hot electron bolometers （HEBs） with microwave （MW） biasing are studied. The MW is used to bias the HEB to the optimum point and to readout the impedance changes caused by the incident THz signals. Compared with the thermal biasing method, this method would be more promising in large scale array with simple readout. The used NbN HEB has an excellent performance as heterodyne detector with the double sideband noise temperature （T N） of 403K working at 4.2K and 0.65THz. As a result, the noise equivalent power of 1.5pW/Hz 1/2 and the response time of 64ps are obtained for the direct detectors based on the NbN HEBs and working at 4.2K and 0.65THz.展开更多
Making use of disk targets composed of several peculiar materials (foamAn, foam C8H8) and hohlraum with a special structure, experiments have been doneat "Xing Guang - II" laser facility, which study the cha...Making use of disk targets composed of several peculiar materials (foamAn, foam C8H8) and hohlraum with a special structure, experiments have been doneat "Xing Guang - II" laser facility, which study the characteristics of hot electronsand the related nonlinear processes such as Stimulated airman Scattering (SRS), TwoPlasma Decay (TPD), Stimulated Brillouin Scattering (SBS), etc.展开更多
A hot-electron driven scheme can be more effective than a laser-driven scheme within suitable hot-electron energy and target density. In our one-dimensional (1D) radiation hydrodynamic simulations, 20× pressure e...A hot-electron driven scheme can be more effective than a laser-driven scheme within suitable hot-electron energy and target density. In our one-dimensional (1D) radiation hydrodynamic simulations, 20× pressure enhancement was achieved when the ignitor laser spike was replaced with a 60-keV hot-electron spike in a shock ignition target designed for the National Ignition Facility (NIF), which can lead to greater shell velocity. Higher hot-spot pressure at the deceleration phase was obtained owing to the greater shell velocity. More cold shell material is ablated into the hot spot, and it benefits the increases of the hot-spot pressure. Higher gain and a wider ignition window can be observed in the hot-electron-driven shock ignition.展开更多
In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors （HEMTs） still lack solid reliability. Devices under accelerated DC stress tests （off-state, VDS = 0 state, and on-state step...In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors （HEMTs） still lack solid reliability. Devices under accelerated DC stress tests （off-state, VDS = 0 state, and on-state step-stress） are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs. All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] （Joh J and del Alamo J A 2006 IEEE IDEM Tech. Digest p. 415）. However, under the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both effects should be taken into consideration.展开更多
The kink effect in current-voltage （IV） characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current （DC） IV measurements in a GaN-based HEMT with an AlGaN back ...The kink effect in current-voltage （IV） characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current （DC） IV measurements in a GaN-based HEMT with an AlGaN back barrier, a possible mechanism with electron-trapping and detrapping processes is proposed. Kink-related deep levels are activated by a high drain source voltage （Vds） and located in a GaN channel layer. Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization. Moreover, the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.展开更多
Localized surface plasmon has been extensively studied and used for the photocatalysis of various chemical reactions.However,the different contributions between plasmon resonance and interband transition in photocatal...Localized surface plasmon has been extensively studied and used for the photocatalysis of various chemical reactions.However,the different contributions between plasmon resonance and interband transition in photocatalysis has not been well understood.Here,we study the photothermal and hot electrons effects for crystal transformation by combining controlled experiments with numerical simulations.By photo-excitation of Na YF4:Eu^(3+)@Au composite structure,it is found that the plasmonic catalysis is much superior to that of interband transition in the experiments,owing to the hot electrons generated by plasmon decay more energetic to facilitate the reaction.We emphasize that the energy level of hot electrons plays an essential role for improving the photocatalytic activity.The results provide guidelines for improving the efficiency of plasmonic catalysis in future experimental design.展开更多
A brief introduction to the historical background and current status of electron beam ion traps (EBITs)is presented. The structure and principles of an EBIT for producing highly charged ions are described. Finally,EBI...A brief introduction to the historical background and current status of electron beam ion traps (EBITs)is presented. The structure and principles of an EBIT for producing highly charged ions are described. Finally,EBITs as a potential tool in hot-plasma diagnostics and in studying frontier problems of highly charged ion physicsare discussed.展开更多
We calculated the uniform dielectric breakdown field strength of residual 30% CF3I/CO2 gas mixtures during the arc extinction process over the temperature range 300-3500 K at 0.1 MPa. The limiting reduced field streng...We calculated the uniform dielectric breakdown field strength of residual 30% CF3I/CO2 gas mixtures during the arc extinction process over the temperature range 300-3500 K at 0.1 MPa. The limiting reduced field strengths are decided by a balance of electron generation and loss based on chemical reactions estimated by the electron energy distribution function （EEDF）, which employs the Boltzmann equation method with two-term expanding approximation in the steady-state Townsend （SST） condition. During the insulation recovery phase, the hot CF3I/CO2 gas mixtures have maximum dielectric strength at a temperature of about 1500 K. At room temperature 300 K, the electric strength after arc extinction （90.3 Td, 1 Td=10-21 V.m2） is only 38% of the original value before arc （234.9 Td）. The adverse insulation recovery ability of CF3I/CO2 gas mixtures in arc extinction hinders its application in electric circuit breakers and other switchgears as an arc quenching and insulating medium.展开更多
A sheet plasma is generated by a mesh anode and a single hot-filament cathode with a DC power supply, and its characteristics are experimentally investigated. The sheet plasma is observed to locate around the anode. B...A sheet plasma is generated by a mesh anode and a single hot-filament cathode with a DC power supply, and its characteristics are experimentally investigated. The sheet plasma is observed to locate around the anode. Both electron density and electron temperature derived from the average energy of the energetic electrons in nitrogen are estimated to be 10s cm^-3 and 20- 40 eV, respectively, using the optical emission spectroscopy （OES） method based on a kinetic model of low-pressure nitrogen discharge. The electron density, electron temperature and their spatial distributions are found to be affected by the supplying voltage on the anode（70 V to 300 V）, filament temperature （600℃ to 780℃） and gas pressure （2 Pa to 20 Pa）. By adjusting these parameters the discharge status can be easily controlled.展开更多
Atomic-layer MoS_2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy（AFM）, x-ray diffraction（XRD）, high-resolution transition electron ...Atomic-layer MoS_2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy（AFM）, x-ray diffraction（XRD）, high-resolution transition electron microscopy（HRTEM）, photoluminescence（PL）, and x-ray photoelectron spectroscopy（XPS） characterization methods is applied to investigate the crystal structures, valence states, and compositions of the ultrathin film areas. The nucleation particles show irregular morphology, while for a larger size somewhere, the films are granular and the grains have a triangle shape. The films grow in a preferred orientation（002）. The HRTEM images present the graphene-like structure of stacked layers with low density of stacking fault, and the interlayer distance of plane is measured to be about 0.63 nm. It shows a clear quasihoneycomb-like structure and 6-fold coordination symmetry. Room-temperature PL spectra for the atomic layer MoS_2 under the condition of right and left circular light show that for both cases, the A1 and B1 direct excitonic transitions can be observed. In the meantime, valley polarization resolved PL spectra are obtained. XPS measurements provide high-purity samples aside from some contaminations from the air, and confirm the presence of pure MoS_2. The stoichiometric mole ratio of S/Mo is about 2.0–2.1, suggesting that sulfur is abundant rather than deficient in the atomic layer MoS_2 under our experimental conditions.展开更多
基金Project supported by the National Natural Science Foundation of China （Grant No 10275056） and the Science and Technology 0ffice of Sichuan, China （Grant 04JY029-097）.
文摘The effects of atomic number Z on the energy distribution of hot electrons generated by the interaction of 60fs, 130mJ, 800nm, and 7×10^17W/cm^2 laser pulses with metallic targets have been studied experimentally. The results show that the number and the effective temperature of hot electrons increase with the atomic number Z of metallic targets, and the temperature of hot electrons are in the range of 190-230keV, which is consistent with a scaling law of hot electrons temperature.
基金supported by the National Natural Science Foundation of China(Grant No.61376109)the Opening Project of National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component,China(Grant No.ZHD201202)
文摘Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.
基金Project supported by the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDA25050600)the DCI joint team。
文摘The transport of hot electrons in inertial confinement fusion(ICF)is integrated issue due to the coupling of hydrodynamic evolution and many physical processes.A hot electron transport code is developed and coupled with the radiation hydrodynamic code MULTI1D in this study.Using the code,the slowing-down process and ablation process of the hot electron beam are simulated.The ablation pressure scaling law of hot electron beam is confirmed in our simulations.The hot electron transport is simulated in the radiation-ablated plasmas relevant to indirect-drive ICF,where the spatial profile of hot electron energy deposition is presented around the shock compressed region.It is shown that the hot electron can prominently increase the total ablation pressure in the early phase of radiation-ablated plasma.So,our study suggests that a potential-driven symmetric mechanism may occur under the irradiation of asymmetric hot electron beam.The possible degradation from the hot electron transport and preheating is also discussed.
文摘A silver microelectrode with a diameter of 30μm in an aqueous K_(2)SO_(4) electrolyte was irradiated with 55 fs and 213 fs laser pulses.This caused the emission of electrons which transiently charged the electrochemical double layer.The two applied pulse durations were significantly shorter than the electron-phonon relaxation time.The laser pulse durations had negligible impact on the emitted charge,which is incompatible with multiphoton emission.On the other hand,the ob-served dependence of emitted charge on laser fluence and electrode potential supports the thermionic emission mechanism.
基金Project supported by the Chinese Academy of Sciences(Grant Nos.GJJSTD20180003 and QYZDJ-SSW-SLH043)the National Key Basic Research and Development Program of China(Grant Nos.2017YFA0304003 and 2018YFA0404701)+1 种基金the National Natural Science Foundation of China(Grant Nos.11603081,11673073,U1831202,and 11873099)PICS projects between the CAS and the CNRS.
文摘We report on the investigation of optimal bias region of a wide-band superconducting hot electron bolometer(HEB)mixer in terms of noise temperature performance for multi-pixel heterodyne receiver application in the 5-meter Dome A Terahertz Explorer(DATE5)telescope.By evaluating the double sideband(DSB)receiver noise temperature(Trec)across a wide frequency range from 0.2 THz to 1.34 THz and with a large number of bias points,a broad optimal bias region has been observed,illustrating a good bias applicability for multipixel application since the performance of the HEB mixer is uniquely determined by each bias point.The noise temperature of the HEB mixer has been analyzed by calibrating the noise contribution of all RF components,whose transmissions have been measured by a time-domain spectroscopy.The corrected noise temperature distribution shows a frequency independence relation.The dependence of the optimal bias region on the bath temperature of the HEB mixer has also been investigated,the bath temperature has limited effect on the lowest receiver noise temperature until 7 K,however the optimal bias region deteriorates obviously with increasing bath temperature.
基金Supported by the National Basic Research Program of China under Grant No 2014CB339800the National Natural Science Foundation of China under Grant Nos 61521001,11173015 and 11227904+1 种基金the Fundamental Research Funds for the Central Universitiesthe Key Laboratory of Advanced Techniques for Manipulating Electromagnetic Waves of Jiangsu Province
文摘Terahertz （THz） direct detectors based on superconducting niobium nitride （NbN） hot electron bolometers （HEBs） with microwave （MW） biasing are studied. The MW is used to bias the HEB to the optimum point and to readout the impedance changes caused by the incident THz signals. Compared with the thermal biasing method, this method would be more promising in large scale array with simple readout. The used NbN HEB has an excellent performance as heterodyne detector with the double sideband noise temperature （T N） of 403K working at 4.2K and 0.65THz. As a result, the noise equivalent power of 1.5pW/Hz 1/2 and the response time of 64ps are obtained for the direct detectors based on the NbN HEBs and working at 4.2K and 0.65THz.
文摘Making use of disk targets composed of several peculiar materials (foamAn, foam C8H8) and hohlraum with a special structure, experiments have been doneat "Xing Guang - II" laser facility, which study the characteristics of hot electronsand the related nonlinear processes such as Stimulated airman Scattering (SRS), TwoPlasma Decay (TPD), Stimulated Brillouin Scattering (SBS), etc.
基金Project supported by the National Natural Science Foundation of China(Grant No.11775203)the Presidential Foundation of China Academy of Engineering Physics(Grant No.YZJJLX 2016007).
文摘A hot-electron driven scheme can be more effective than a laser-driven scheme within suitable hot-electron energy and target density. In our one-dimensional (1D) radiation hydrodynamic simulations, 20× pressure enhancement was achieved when the ignitor laser spike was replaced with a 60-keV hot-electron spike in a shock ignition target designed for the National Ignition Facility (NIF), which can lead to greater shell velocity. Higher hot-spot pressure at the deceleration phase was obtained owing to the greater shell velocity. More cold shell material is ablated into the hot spot, and it benefits the increases of the hot-spot pressure. Higher gain and a wider ignition window can be observed in the hot-electron-driven shock ignition.
基金Project supported by the National Basic Research Program of China (Grant No. 2011CBA00600)the National Natural Science Foundation of China (Grant No. 61106106)the Fundamental Research Funds for the Central Universities (Grant No. K50510250006)
文摘In spite of their extraordinary performance, AlGaN/GaN high electron mobility transistors （HEMTs） still lack solid reliability. Devices under accelerated DC stress tests （off-state, VDS = 0 state, and on-state step-stress） are investigated to help us identify the degradation mechanisms of the AlGaN/GaN HEMTs. All our findings are consistent with the degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effects in Ref. [1] （Joh J and del Alamo J A 2006 IEEE IDEM Tech. Digest p. 415）. However, under the on-state condition, the devices are suffering from both inverse piezoelectric effects and hot electron effects, and so to improve the reliability of the devices both effects should be taken into consideration.
基金Project supported by the Program for New Century Excellent Talents in University,China (Grant No.NCET-12-0915)
文摘The kink effect in current-voltage （IV） characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current （DC） IV measurements in a GaN-based HEMT with an AlGaN back barrier, a possible mechanism with electron-trapping and detrapping processes is proposed. Kink-related deep levels are activated by a high drain source voltage （Vds） and located in a GaN channel layer. Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization. Moreover, the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.
基金the National Key Research and Development Program of China(Grant No.2020YFA0211300)the National Natural Science Foundation of China(Grant Nos.92050112,12074237,and 12004233)the Fundamental Research Funds for Central Universities,China(Grant Nos.GK202103010and GK202103018)。
文摘Localized surface plasmon has been extensively studied and used for the photocatalysis of various chemical reactions.However,the different contributions between plasmon resonance and interband transition in photocatalysis has not been well understood.Here,we study the photothermal and hot electrons effects for crystal transformation by combining controlled experiments with numerical simulations.By photo-excitation of Na YF4:Eu^(3+)@Au composite structure,it is found that the plasmonic catalysis is much superior to that of interband transition in the experiments,owing to the hot electrons generated by plasmon decay more energetic to facilitate the reaction.We emphasize that the energy level of hot electrons plays an essential role for improving the photocatalytic activity.The results provide guidelines for improving the efficiency of plasmonic catalysis in future experimental design.
基金the Outstanding Young Scientist Program of the Natural Science Foundation of China(No.10125520)by the Outstanding Young Professor Project of the Ministry of Education of China
文摘A brief introduction to the historical background and current status of electron beam ion traps (EBITs)is presented. The structure and principles of an EBIT for producing highly charged ions are described. Finally,EBITs as a potential tool in hot-plasma diagnostics and in studying frontier problems of highly charged ion physicsare discussed.
基金supported by National Natural Science Foundation of China(No.10875093)
文摘We calculated the uniform dielectric breakdown field strength of residual 30% CF3I/CO2 gas mixtures during the arc extinction process over the temperature range 300-3500 K at 0.1 MPa. The limiting reduced field strengths are decided by a balance of electron generation and loss based on chemical reactions estimated by the electron energy distribution function （EEDF）, which employs the Boltzmann equation method with two-term expanding approximation in the steady-state Townsend （SST） condition. During the insulation recovery phase, the hot CF3I/CO2 gas mixtures have maximum dielectric strength at a temperature of about 1500 K. At room temperature 300 K, the electric strength after arc extinction （90.3 Td, 1 Td=10-21 V.m2） is only 38% of the original value before arc （234.9 Td）. The adverse insulation recovery ability of CF3I/CO2 gas mixtures in arc extinction hinders its application in electric circuit breakers and other switchgears as an arc quenching and insulating medium.
基金supported by National Defence Research Foundation of China (No.A1420060181)
文摘A sheet plasma is generated by a mesh anode and a single hot-filament cathode with a DC power supply, and its characteristics are experimentally investigated. The sheet plasma is observed to locate around the anode. Both electron density and electron temperature derived from the average energy of the energetic electrons in nitrogen are estimated to be 10s cm^-3 and 20- 40 eV, respectively, using the optical emission spectroscopy （OES） method based on a kinetic model of low-pressure nitrogen discharge. The electron density, electron temperature and their spatial distributions are found to be affected by the supplying voltage on the anode（70 V to 300 V）, filament temperature （600℃ to 780℃） and gas pressure （2 Pa to 20 Pa）. By adjusting these parameters the discharge status can be easily controlled.
基金Project supported by the Natural Science Foundation of Zhejiang Province,China(Grant Nos.LY16F040003 and LY16A040007)the National Natural Science Foundation of China(Grant Nos.51401069 and 11574067)
文摘Atomic-layer MoS_2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy（AFM）, x-ray diffraction（XRD）, high-resolution transition electron microscopy（HRTEM）, photoluminescence（PL）, and x-ray photoelectron spectroscopy（XPS） characterization methods is applied to investigate the crystal structures, valence states, and compositions of the ultrathin film areas. The nucleation particles show irregular morphology, while for a larger size somewhere, the films are granular and the grains have a triangle shape. The films grow in a preferred orientation（002）. The HRTEM images present the graphene-like structure of stacked layers with low density of stacking fault, and the interlayer distance of plane is measured to be about 0.63 nm. It shows a clear quasihoneycomb-like structure and 6-fold coordination symmetry. Room-temperature PL spectra for the atomic layer MoS_2 under the condition of right and left circular light show that for both cases, the A1 and B1 direct excitonic transitions can be observed. In the meantime, valley polarization resolved PL spectra are obtained. XPS measurements provide high-purity samples aside from some contaminations from the air, and confirm the presence of pure MoS_2. The stoichiometric mole ratio of S/Mo is about 2.0–2.1, suggesting that sulfur is abundant rather than deficient in the atomic layer MoS_2 under our experimental conditions.
