For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive ...For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is proposed.The effect of the parasitics is analyzed based on calculation and the parallel bonding is proposed.The storage capacitance of power supply is calculated quantitatively to provide large pulse current.To ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is proposed.Finally,a prototype is built to verify the drain modulation circuit design.The experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.展开更多
A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum po...A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.展开更多
In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gat...In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.展开更多
An asymmetric Doherty architecture based on three identical transistors is proposed in this paper. This proposed three.way topology reduces the difficulty in designing matching networks brought by the low optimal impe...An asymmetric Doherty architecture based on three identical transistors is proposed in this paper. This proposed three.way topology reduces the difficulty in designing matching networks brought by the low optimal impedance of high power transistors. And the inverted Doherty topology as well as carefully chosen value of load impedance makes it possible to extend the bandwidth of high power amplifiers. Besides, bias networks of this proposed three.way architecture are also carefully considered to improve the linearity. The proposed high power three.way Doherty power amplifier(3W.DPA) is designed and fabricated based on theoretic analysis. Its maximum output power is about 600 Watts and the drain efficiency is above 35.5% at 9d B back off output power level from 1.9GHz to 2.2 GHz and the saturated drain efficiency is above 47% across the whole frequency band. The measured concurrent two.tone results suggest that the linearity of DPA is improved by at least 5d B.展开更多
By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimi...By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.展开更多
In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigati...In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy （SEM） and energy dispersive spectrometer （EDS）. Experimental results accord well with the simulation of our model.展开更多
Stimulated Raman scattering in a double cladding optical fiber is studied with a continuous wave laser used as a pump source. Under various launch conditions, pump modes are differently excited. Considering the mode c...Stimulated Raman scattering in a double cladding optical fiber is studied with a continuous wave laser used as a pump source. Under various launch conditions, pump modes are differently excited. Considering the mode coupling effect among the pump modes, the evolution of the power in the Stokes modes is studied. The results show that the scattered waves （the Stokes waves） in the fiber core with 9%tm diameter and 0.14 NA could propagate predominantly in the fundamental mode of the fiber by carefully adjusting the pump light launching conditions.展开更多
本文针对高功率放大器(HPA)的非线性失真导致OFDM(Orthogonal Frequency Division Multiplexing)系统传输性能下降问题,采用两个类似结构的单输入单输出BP神经网络串联后级联HPA实现其预失真,前一网络是HPA的AM-AM特性的逆模型,用来实现...本文针对高功率放大器(HPA)的非线性失真导致OFDM(Orthogonal Frequency Division Multiplexing)系统传输性能下降问题,采用两个类似结构的单输入单输出BP神经网络串联后级联HPA实现其预失真,前一网络是HPA的AM-AM特性的逆模型,用来实现HPA的幅度预失真,后一网络是HPA的AM-PM特性模型,回避了其逆模型的建立,实现了HPA更高精度的相位预失真,提高了整体预失真效果。仿真结果显示了即使输入回退只有2.93dB,带外谱增长仍能降低约10dB,表明该方案能够方便高效地实现OFDM系统中HPA的自适应预失真,大大提高OFDM系统的传输性能。展开更多
为克服现有神经网络预失真方法复杂度高、易陷入局域最小等缺陷,提出一种正交差分进化磷虾群(ODEKH)与neuron-by-neuron(NBN)算法联合优化实数固定延时全连接级联神经网络(RVFTDFCCNN)的高功率放大器预失真方法。采用RVFTDFCCNN对预失...为克服现有神经网络预失真方法复杂度高、易陷入局域最小等缺陷,提出一种正交差分进化磷虾群(ODEKH)与neuron-by-neuron(NBN)算法联合优化实数固定延时全连接级联神经网络(RVFTDFCCNN)的高功率放大器预失真方法。采用RVFTDFCCNN对预失真系统中的预失真器和逆估计器进行建模,通过ODEKH算法进行全局搜索获得RVFTDFCCNN的初始化参数,再用NBN算法对RVFTDFCCNN进行训练,同时根据复合函数求偏导数的链式规则,从2个层次对NBN算法中的Jacobian矩阵元素计算进行优化。采用宽带DTMB信号作为输入信号,对预失真系统进行仿真。结果表明:当训练误差和泛化误差均在同一数量级时,RVFTDFCCNN的NBN算法计算量比单隐层(SHL)神经网络明显降低;ODEKH算法比传统磷虾群算法具有更快的收敛速度,ODEKH-NBN联合算法的训练精度比Levenberg-Marquardt(LM)算法提高一个数量级,预失真后的邻道功率比(ACPR)比LM算法改善了2 d B。说明本文的预失真方法具有较低的复杂度和良好的预失真性能。展开更多
A review on the progress of powerful 2 μm silica fiber sources in past decades is presented. We review the state-of-the-art records and representative achievements of 2 μm high-average-power continuous- wave, pulsed...A review on the progress of powerful 2 μm silica fiber sources in past decades is presented. We review the state-of-the-art records and representative achievements of 2 μm high-average-power continuous- wave, pulsed fiber lasers and amplifiers, and powerful superfluorescent sources. Challenges which limit the further power scaling of 2 μm silica fiber sources are discussed, including pumping brightness limitation, thermal problem and nonlinear effects. Potential and promising roadmaps to go beyond these limitations, like tandem pumping and beam combining, are discussed. Prospects of powerful 2 μm silica fiber sources are also presented in the end of paper.展开更多
基金supported by the Pri⁃mary Research&Development Plan of Jiangsu Province(Nos.BE2022070,BE2022070-2).
文摘For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is proposed.The effect of the parasitics is analyzed based on calculation and the parallel bonding is proposed.The storage capacitance of power supply is calculated quantitatively to provide large pulse current.To ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is proposed.Finally,a prototype is built to verify the drain modulation circuit design.The experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.
基金Project supported by the National Key Basic Research Program of China(Grant No.2011CBA00606)Program for New Century Excellent Talents in University,China(Grant No.NCET-12-0915)the National Natural Science Foundation of China(Grant No.61334002)
文摘A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum power-added efficiency （PAE） are determined at the fundamental and 2nd harmonic frequency （f0 and 2f0）. The harmonic manipulation networks are designed both in the driver stage and the power stage which manipulate the second harmonic to a very low level within the operating frequency band. Then the inter-stage matching network and the output power combining network are calculated to achieve a low insertion loss. So the PAE and the power gain is greatly improved. In an operation frequency range of 5,4 GHz-5.8 GHz in CW mode, the amplifier delivers a maximum output power of 18.62 W, with a PAE of 55.15 % and an associated power gain of 28.7 dB, which is an outstanding performance.
基金Project supported by the National Natural Science Foundation of China(Grant No.61203211)the Natural Science Foundation of Jiangsu Higher Education Institutions of China(Grant No.13KJB140006)the Foundation for Outstanding Young Teachers of Nanjing University of Information Science&Technology,China(Grant No.20110423)
文摘In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.
基金supported in part by the National Basic Research Program of China (Grant No. 2014CB339900)the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. Grant 2015ZX03002002 and Grant 2016ZX03002009, and Grant 2016ZX03001005)+2 种基金the 863 program (Grant No. 2015AA010802)the National Natural Science Foundation of China (Grant No. 61522112, 61331003)the New Century Excellent Talents in University (NCET)
文摘An asymmetric Doherty architecture based on three identical transistors is proposed in this paper. This proposed three.way topology reduces the difficulty in designing matching networks brought by the low optimal impedance of high power transistors. And the inverted Doherty topology as well as carefully chosen value of load impedance makes it possible to extend the bandwidth of high power amplifiers. Besides, bias networks of this proposed three.way architecture are also carefully considered to improve the linearity. The proposed high power three.way Doherty power amplifier(3W.DPA) is designed and fabricated based on theoretic analysis. Its maximum output power is about 600 Watts and the drain efficiency is above 35.5% at 9d B back off output power level from 1.9GHz to 2.2 GHz and the saturated drain efficiency is above 47% across the whole frequency band. The measured concurrent two.tone results suggest that the linearity of DPA is improved by at least 5d B.
基金supported by the Innovation Fund of State Key Lab of Millimeter Waves
文摘By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.
基金supported by the National Basic Research Program of China(Grant No.2014CB339900)the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and TechnologyChina Academy of Engineering Physics(Grant No.2015-0214.XY.K)
文摘In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy （SEM） and energy dispersive spectrometer （EDS）. Experimental results accord well with the simulation of our model.
文摘Stimulated Raman scattering in a double cladding optical fiber is studied with a continuous wave laser used as a pump source. Under various launch conditions, pump modes are differently excited. Considering the mode coupling effect among the pump modes, the evolution of the power in the Stokes modes is studied. The results show that the scattered waves （the Stokes waves） in the fiber core with 9%tm diameter and 0.14 NA could propagate predominantly in the fundamental mode of the fiber by carefully adjusting the pump light launching conditions.
文摘本文针对高功率放大器(HPA)的非线性失真导致OFDM(Orthogonal Frequency Division Multiplexing)系统传输性能下降问题,采用两个类似结构的单输入单输出BP神经网络串联后级联HPA实现其预失真,前一网络是HPA的AM-AM特性的逆模型,用来实现HPA的幅度预失真,后一网络是HPA的AM-PM特性模型,回避了其逆模型的建立,实现了HPA更高精度的相位预失真,提高了整体预失真效果。仿真结果显示了即使输入回退只有2.93dB,带外谱增长仍能降低约10dB,表明该方案能够方便高效地实现OFDM系统中HPA的自适应预失真,大大提高OFDM系统的传输性能。
文摘为克服现有神经网络预失真方法复杂度高、易陷入局域最小等缺陷,提出一种正交差分进化磷虾群(ODEKH)与neuron-by-neuron(NBN)算法联合优化实数固定延时全连接级联神经网络(RVFTDFCCNN)的高功率放大器预失真方法。采用RVFTDFCCNN对预失真系统中的预失真器和逆估计器进行建模,通过ODEKH算法进行全局搜索获得RVFTDFCCNN的初始化参数,再用NBN算法对RVFTDFCCNN进行训练,同时根据复合函数求偏导数的链式规则,从2个层次对NBN算法中的Jacobian矩阵元素计算进行优化。采用宽带DTMB信号作为输入信号,对预失真系统进行仿真。结果表明:当训练误差和泛化误差均在同一数量级时,RVFTDFCCNN的NBN算法计算量比单隐层(SHL)神经网络明显降低;ODEKH算法比传统磷虾群算法具有更快的收敛速度,ODEKH-NBN联合算法的训练精度比Levenberg-Marquardt(LM)算法提高一个数量级,预失真后的邻道功率比(ACPR)比LM算法改善了2 d B。说明本文的预失真方法具有较低的复杂度和良好的预失真性能。
基金supported by the National Nature Science Foundation of China under Grant No.61322505Innovation Foundation for Graduates of National University of Defense Technology under Grant No.B130704
文摘A review on the progress of powerful 2 μm silica fiber sources in past decades is presented. We review the state-of-the-art records and representative achievements of 2 μm high-average-power continuous- wave, pulsed fiber lasers and amplifiers, and powerful superfluorescent sources. Challenges which limit the further power scaling of 2 μm silica fiber sources are discussed, including pumping brightness limitation, thermal problem and nonlinear effects. Potential and promising roadmaps to go beyond these limitations, like tandem pumping and beam combining, are discussed. Prospects of powerful 2 μm silica fiber sources are also presented in the end of paper.
